216 results on '"Detchprohm, T."'
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2. Junction temperature, spectral shift, and efficiency in GaInN-based blue and green light emitting diodes
3. Growth and characterization of green GaInN-based light emitting diodes on free-standing non-polar GaN templates
4. Characterization of GaInN/GaN layers for green emitting laser diodes
5. Light-emitting diode development on polar and non-polar GaN substrates
6. Boosting green GaInN/GaN light-emitting diode performance by a GaInN underlying layer
7. Junction Temperature Measurements and Thermal Modeling of GaInN/GaN Quantum Well Light-Emitting Diodes
8. Structural Characterization of Homoepitaxial Blue GaInN/GaN Light-Emitting Diodes by Transmission Electron Microscopy
9. Dislocation analysis in homoepitaxial GaInN/GaN light emitting diode growth
10. Optical and structural properties of InGaN/GaN multiple quantum well structure grown by metalorganic chemical vapor deposition
11. High-Quality AlxGa1−xN Using Low Temperature-Interlayer and its Application to UV Detector
12. Growth of Crack-Free thick AlGaN Layer and its Application to GaN-Based Laser Diode
13. Piezoelectric polarization in the radiative centers of GaInN/GaN quantum wells and devices
14. Nitride-based laser diodes using thick n-AlGaN layers
15. Effects of buffer layers in heteroepitaxy of gallium nitride
16. Analysis of deep levels in n-type GaN by transient capacitance methods
17. GaN/ZnO and AlGaN/ZnO heterostructure LEDs: growth, fabrication, optical and electrical characterization
18. Ultrafast Carrier Dynamics and Recombination in Green Emitting InGaN MQW LED
19. Future Aspects of MOCVD Technology for Epitaxial Growth of Semiconductors
20. Charge Profiling of the p-AlGaN Electron Blocking Layer in AlGaInN Light Emitting Diode Structures
21. Analysis of the Quantum Efficiency of GaInN/GaN Light Emitting Diodes in the Range of 390–580 nm
22. Development of High Power Green Light Emitting Diode Chips
23. Heteroepitaxy and Characterization of Low-Dislocation-Density GaN on Periodically Grooved Substrates
24. High-Quality AlxGa1−xN Using Low Temperature-Interlayer and its Application to UV Detector
25. Growth of Crack-Free Thick AlGaN Layer and Its Application to GaN-Based Laser Diode
26. Gain Spectroscopy of HVPE-Grown GaN
27. Thermal characterization of gallium nitride p-i-n diodes
28. Thermal characterization of GaN vertical p-i-n diodes
29. NbN Capping Layer for Enhanced Thermal Processing of Group III-Nitride Semiconductor Devices
30. Atomic-Scale Phase Transition of Epitaxial GaN on Nanostructured Si(001): Activation and Beyond
31. Incorporation of indium on cubic GaN epitaxially induced on a nanofaceted Si(001) substrate by phase transition
32. (Invited) Group-III Nitrides to the Extreme --- from LEDs and Solar Cells to the Transistor
33. High temperature characteristics of monolithically integrated LED and MOS-channel HEMT in GaN using selective epi removal
34. Performance Evaluation of GaN/InGaN Heterojunction Phototransistors
35. NbN Capping Layer for Enhanced Thermal Processing of Group III-Nitride Semiconductor Devices.
36. (Invited) Carrier Dynamics and Photon Management for Improvement in Quantum Efficiencies of GaN-Based Visible Light-Emitting Diodes
37. Monolithic integration of light-emitting diodes and power metal-oxide-semiconductor channel high-electron-mobility transistors for light-emitting power integrated circuits in GaN on sapphire substrate
38. Defect-reduced green GaInN/GaN light-emitting diode on nanopatterned sapphire
39. UV Light Emitter on Bulk Semipolar (11-22) GaN
40. Carrier localization and nonradiative recombination in yellow emitting InGaN quantum wells
41. Enhanced device performance of GaInN‐based deep green light emitting diodes with V‐defect‐free active region
42. V-defect analysis in green and deep green light emitting diode structures
43. Photon modulated electroluminescence of GaInN/GaN multiple quantum well light emitting diodes
44. Very strong nonlinear optical absorption in green GaInN/GaN multiple quantum well structures
45. Junction temperature analysis in green light emitting diode dies on sapphire and GaN substrates
46. Improved performance of GaInN based deep green light emitting diodes through V-defect reduction
47. OPTICAL PROPERTIES OF GaInN/GaN MULTI-QUANTUM WELL STRUCTURE AND LIGHT EMITTING DIODE GROWN BY METALORGANIC CHEMICAL VAPOR PHASE EPITAXY
48. Temperature dependence of the quantum efficiency in green light emitting diode dies
49. SPATIAL SPECTRAL ANALYSIS IN HIGH BRIGHTNESS GaInN/GaN LIGHT EMITTING DIODES
50. LOW TEMPERATURE ELECTROLUMINESCENCE OF GREEN AND DEEP GREEN GaInN/GaN LIGHT EMITTING DIODES
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