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13. Multiscale in modelling and validation for solar photovoltaics

Author

Hamed T.A., Adamovic N., Aeberhard U., Alonso-Alvarez D., Amin-Akhlaghi Z., Auf Der Maur M., Beattie N., Bednar N., Berland K., Birner S., Califano M., Capan I., Cerne B., Chilibon I., Connolly J.P., Juan F.C., Coutinho J., David C., Deppert K., Donchev V., Drev M., Ehlen B., Ekins-Daukes N., Even J., Fara L., Marron D.F., Gagliardi A., Garrido B., Gianneta V., Gomes M., Guillemoles J.-F., Guina M., Halme J., Hocevar M., Jacak L., Jacak W., Jaksic Z., Joseph L.K., Kassavetis S., Kazukauskas V., Kleider J.-P., Kluczyk K., Kopecek R., Krasovec U.O., Lazzari J.-L., Lifshitz E., Loncaric M., Madsen S.P., Vega A.M., Mencaraglia D., Messing M.E., Armando F.M., Nassiopoulou A.G., Neijm A., Nemcsics A., Neto V., Pedesseau L., Persson C., Petridis K., Popescu L., Pucker G., Radovanovi? J., Rimada J.C., Ristova M., Savic I., Savin H., Sendova-Vassileva M., Sengul A., Silva J., Steiner U., Storch J., Stratakis E., Tao S., Tomanek P., Tomi? S., Tukiainen A., Turan R., Ulloa J.M., Wang S., Yuksel F., Zadny J., Zarbakhsh J. and The authors are grateful for the financial support by the COST Action MP1406 'MultiscaleSolar.'

Published
2018

16. Multiscale in modelling and validation for solar photovoltaics

Author

Hamed, T A, Adamovic, N, Aeberhard, U, Alonso-Alvarez, D, Amin-Akhlaghi, Z, Auf Der Maur, M, Beattie, N, Bednar, N, Berland, K, Birner, S, Califano, M, Capan, I, Cerne, B, Chilibon, I, Connolly, J P, Juan, F C, Coutinho, J, David, C, Deppert, K, Donchev, V, Drev, M, Ehlen, B, Ekins-Daukes, N, Even, J, Fara, L, Marron, D F, Gagliardi, A, Garrido, B, Gianneta, V, Gomes, M, Guillemoles, J.-F., Guina, M, Halme, J, Hocevar, M, Jacak, L, Jacak, W, Jakšić, Zoran, Joseph, L K, Kassavetis, S, Kazukauskas, V, Kleider, J.-P., Kluczyk, K, Kopecek, R, Krasovec, U O, Lazzari, J.-L., Lifshitz, E, Loncaric, M, Madsen, S P, Vega, A M, Mencaraglia, D, Messing, M E, Armando, F M, Nassiopoulou, A G, Neijm, A, Nemcsics, A, Neto, V, Pedesseau, L, Persson, C, Petridis, K, Popescu, L, Pucker, G, Radovanović, Jelena, Rimada, J C, Ristova, M, Savic, I, Savin, H, Sendova-Vassileva, M, Sengul, A, Silva, J, Steiner, U, Storch, J, Stratakis, E, Tao, S, Tomanek, P, Tomić, Stanko, Tukiainen, A, Turan, R, Ulloa, J M, Wang, S, Yuksel, F, Zadny, J, Zarbakhsh, J, Hamed, T A, Adamovic, N, Aeberhard, U, Alonso-Alvarez, D, Amin-Akhlaghi, Z, Auf Der Maur, M, Beattie, N, Bednar, N, Berland, K, Birner, S, Califano, M, Capan, I, Cerne, B, Chilibon, I, Connolly, J P, Juan, F C, Coutinho, J, David, C, Deppert, K, Donchev, V, Drev, M, Ehlen, B, Ekins-Daukes, N, Even, J, Fara, L, Marron, D F, Gagliardi, A, Garrido, B, Gianneta, V, Gomes, M, Guillemoles, J.-F., Guina, M, Halme, J, Hocevar, M, Jacak, L, Jacak, W, Jakšić, Zoran, Joseph, L K, Kassavetis, S, Kazukauskas, V, Kleider, J.-P., Kluczyk, K, Kopecek, R, Krasovec, U O, Lazzari, J.-L., Lifshitz, E, Loncaric, M, Madsen, S P, Vega, A M, Mencaraglia, D, Messing, M E, Armando, F M, Nassiopoulou, A G, Neijm, A, Nemcsics, A, Neto, V, Pedesseau, L, Persson, C, Petridis, K, Popescu, L, Pucker, G, Radovanović, Jelena, Rimada, J C, Ristova, M, Savic, I, Savin, H, Sendova-Vassileva, M, Sengul, A, Silva, J, Steiner, U, Storch, J, Stratakis, E, Tao, S, Tomanek, P, Tomić, Stanko, Tukiainen, A, Turan, R, Ulloa, J M, Wang, S, Yuksel, F, Zadny, J, and Zarbakhsh, J

Abstract

Photovoltaics is amongst the most important technologies for renewable energy sources, and plays a key role in the development of a society with a smaller environmental footprint. Key parameters for solar cells are their energy conversion efficiency, their operating lifetime, and the cost of the energy obtained from a photovoltaic system compared to other sources. The optimization of these aspects involves the exploitation of new materials and development of novel solar cell concepts and designs. Both theoretical modeling and characterization of such devices require a comprehensive view including all scales from the atomic to the macroscopic and industrial scale. The different length scales of the electronic and optical degrees of freedoms specifically lead to an intrinsic need for multiscale simulation, which is accentuated in many advanced photovoltaics concepts including nanostructured regions. Therefore, multiscale modeling has found particular interest in the photovoltaics community, as a tool to advance the field beyond its current limits. In this article, we review the field of multiscale techniques applied to photovoltaics, and we discuss opportunities and remaining challenges. © T. Abu Hamed et al., published by EDP Sciences, 2018.

Published
2018

17. Multiscale in modelling and validation for solar photovoltaics

Author

Hamed T.A., Adamovic N., Aeberhard U., Alonso-Alvarez D., Amin-Akhlaghi Z., Auf Der Maur M., Beattie N., Bednar N., Berland K., Birner S., Califano M., Capan I., Cerne B., Chilibon I., Connolly J.P., Juan F.C., Coutinho J., David C., Deppert K., Donchev V., Drev M., Ehlen B., Ekins-Daukes N., Even J., Fara L., Marron D.F., Gagliardi A., Garrido B., Gianneta V., Gomes M., Guillemoles J.-F., Guina M., Halme J., Hocevar M., Jacak L., Jacak W., Jaksic Z., Joseph L.K., Kassavetis S., Kazukauskas V., Kleider J.-P., Kluczyk K., Kopecek R., Krasovec U.O., Lazzari J.-L., Lifshitz E., Loncaric M., Madsen S.P., Vega A.M., Mencaraglia D., Messing M.E., Armando F.M., Nassiopoulou A.G., Neijm A., Nemcsics A., Neto V., Pedesseau L., Persson C., Petridis K., Popescu L., Pucker G., Radovanović J., Rimada J.C., Ristova M., Savic I., Savin H., Sendova-Vassileva M., Sengul A., Silva J., Steiner U., Storch J., Stratakis E., Tao S., Tomanek P., Tomić S., Tukiainen A., Turan R., Ulloa J.M., Wang S., Yuksel F., Zadny J., Zarbakhsh J., Hamed T.A., Adamovic N., Aeberhard U., Alonso-Alvarez D., Amin-Akhlaghi Z., Auf Der Maur M., Beattie N., Bednar N., Berland K., Birner S., Califano M., Capan I., Cerne B., Chilibon I., Connolly J.P., Juan F.C., Coutinho J., David C., Deppert K., Donchev V., Drev M., Ehlen B., Ekins-Daukes N., Even J., Fara L., Marron D.F., Gagliardi A., Garrido B., Gianneta V., Gomes M., Guillemoles J.-F., Guina M., Halme J., Hocevar M., Jacak L., Jacak W., Jaksic Z., Joseph L.K., Kassavetis S., Kazukauskas V., Kleider J.-P., Kluczyk K., Kopecek R., Krasovec U.O., Lazzari J.-L., Lifshitz E., Loncaric M., Madsen S.P., Vega A.M., Mencaraglia D., Messing M.E., Armando F.M., Nassiopoulou A.G., Neijm A., Nemcsics A., Neto V., Pedesseau L., Persson C., Petridis K., Popescu L., Pucker G., Radovanović J., Rimada J.C., Ristova M., Savic I., Savin H., Sendova-Vassileva M., Sengul A., Silva J., Steiner U., Storch J., Stratakis E., Tao S., Tomanek P., Tomić S., Tukiainen A., Turan R., Ulloa J.M., Wang S., Yuksel F., Zadny J., and Zarbakhsh J.

Published
2018

21. Polytypism in III-V nanowires

Author

Lehmann, S., Dick, K.A., Johansson, J., Caroff, P., Bolinsson, J., Messing, M.E., JACOBSSON, D., Deppert, K., Samuelson, L., Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Published
2011

22. Control of III-V nanowire crystal structure by growth parameter tuning [Invited]

Author

Dick, K.A., Caroff, P., Bolinsson, J., Messing, M.E., Johansson, J., Deppert, K., Wallenberg, L.R., Samuelson, L., Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), and Lund University [Lund]

Subjects
[SPI]Engineering Sciences [physics]
Abstract

International audience; In this work we investigate the variation of the crystal structure of gold-seeded III–V nanowires with growth parameters, in order to gain a cohesive understanding of these effects. We investigate six III–V materials: GaAs, InAs, GaP, InP, GaSb and InSb, over a variation of growth conditions. All six of these materials exhibit a cubic zinc blende structure in bulk, but twin planes and stacking faults, as well as a hexagonal wurtzite structure, are commonly observed in nanowires. Parameters which may affect the crystal structure include growth temperature and pressure, precursor molar fraction and V/III ratio, nanowire diameter and surface density, and impurity atoms. We will focus on temperature, precursor molar fraction and V/III ratio. Our observations are compared to previous reports in the literature of the III–V nanowire crystal structure, and interpreted in terms of existing models. We propose that changes in the crystal structure with growth parameters are directly related to changes in the stable side facets.

Published
2010

23. Wurtzit- und Zinkblendestrukturen in III-V Halbleiternanostrukturen

Author

Caroff, P., Dick, K.A., Johansson, J., Messing, M.E., Deppert, K., Samuelson, L., Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Published
2009

24. MOVPE growth of antimonide nanowire heterostructures

Author

Borg, B.M., Caroff, P., Dick, K.A., Messing, M.E., Nilsson, H.A., Deppert, K., Wernersson, L.E., Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Published
2009

27. Oxidation and reduction of Pd(100) and aerosol-deposited Pd nanoparticles

Author

Westerström, R., Messing, M. E., Blomberg, S., Hellman, A., Grönbeck, H., Gustafson, J., Martin, N. M., Balmes, O., Van Rijn, R., Andersen, J. N., Deppert, K., Bluhm, H., Liu, Z., Grass, M. E., Hävecker, M., Lundgren, E., Westerström, R., Messing, M. E., Blomberg, S., Hellman, A., Grönbeck, H., Gustafson, J., Martin, N. M., Balmes, O., Van Rijn, R., Andersen, J. N., Deppert, K., Bluhm, H., Liu, Z., Grass, M. E., Hävecker, M., and Lundgren, E.

Published
2011

31. Nanowires With Promise for Photovoltaics

Author

Borgström, Magnus T., primary, Wallentin, J., additional, Heurlin, M., additional, Fält, S., additional, Wickert, P., additional, Leene, J., additional, Magnusson, M. H., additional, Deppert, K., additional, and Samuelson, L., additional

Published
2011
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32. Oxidation and reduction of Pd(100) and aerosol-deposited Pd nanoparticles

Author

Westerström, R., primary, Messing, M. E., additional, Blomberg, S., additional, Hellman, A., additional, Grönbeck, H., additional, Gustafson, J., additional, Martin, N. M., additional, Balmes, O., additional, van Rijn, R., additional, Andersen, J. N., additional, Deppert, K., additional, Bluhm, H., additional, Liu, Z., additional, Grass, M. E., additional, Hävecker, M., additional, and Lundgren, E., additional

Published
2011
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36. Reduction of the Schottky barrier height on silicon carbide using Au nano-particles

Author

Lee, S. K., Zetterling, Carl-Mikael, Östling, Mikael, Aberg, I., Magnusson, M. H., Deppert, K., Wernersson, L. E., Samuelson, L., Litwin, A., Lee, S. K., Zetterling, Carl-Mikael, Östling, Mikael, Aberg, I., Magnusson, M. H., Deppert, K., Wernersson, L. E., Samuelson, L., and Litwin, A.

Abstract

By the incorporation of size-selected Au nano-particles in Ti Schottky contacts on silicon carbide, we could observe considerably lower the barrier height of the contacts. This result could be obtained for both n- and p-type Schottky contacts using current-voltage and capacitance voltage measurements. For n-type Schottky contacts, we observed reductions of 0.19-0.25 eV on 4H-SiC and 0.15-0.17 eV on 6H-SiC as compared with particle-free Ti Schottky contacts. For p-type SiC, the reduction was a little lower with 0.02-0.05 eV on 4H- and 0.10-0.13 eV on 6H-SiC. The reduction of the Schottky barrier height is explained using a model with enhanced electric field at the interface due to the small size of the circular patch and the large difference of the barrier height between Ti and Au., QC 20100525

Published
2002
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37. Reduction of the barrier height and enhancement of tunneling current of titanium contacts using embedded Au nano-particles on 4H and 6H silicon carbide

Author

Lee, S. -K, Zetterling, Carl-Mikael, Östling, Mikael, Åberg, I., Magnusson, M. H., Deppert, K., Wernersson, L. -E, Samuelson, L., Litwin, A., Lee, S. -K, Zetterling, Carl-Mikael, Östling, Mikael, Åberg, I., Magnusson, M. H., Deppert, K., Wernersson, L. -E, Samuelson, L., and Litwin, A.

Abstract

We have investigated the electrical characteristics of Ti Schottky contacts with embedded Au nano-particles on various types of epilayers of SiC (4H- and 6H-SiC). From our current-voltage (I-V) and capacitance-voltage (C-V) measurements, we observed that Ti Schottky contacts with embedded Au nano-particles had 0.19 eV (n-4H-SiC) and 0.15 eV (n-6H-SiC) lower barrier height than those of particle free Ti Schottky contacts. In order to understand this reduction of the Schottky barrier height (SBH) for Ti Schottky contacts with embedded Au nano-particles, it has been proposed that SBH lowering is caused by an enhanced electric field due to the small size of the Au nano-particles and the large SBH difference. We have also tested these contacts on highly doped n-and p-type SiC material to study ohmic contacts using linear TLM measurements., References: Geib, K.M., Wilson, C., Long, R.G., Wilmsen, C.W., (1990) J. Appl. Phys., 68, p. 2796; Anand, S., Carlsson, S.-B., Deppert, K., Montelius, L., Samuelson, L., (1996) J. Vac. Sci. Technol. B, 14, p. 2794; Magnusson, M.H., Deppert, K., Malm, J.-O., Bovin, J.-O., Samuelson, L., (1999) J. Nanoparticle Res., 1, p. 243; Lee, S.-K., Zetterling, C.-M., Östling, M., (2001) J. Elect. Mater., 30, p. 242; Tung, R.T., (1992) Phys. Rev. B, 45, p. 13509; SILVACO intemation Ltd. CA, U.S.ANarayanan, V., Liu, Z., Shen, Y.M.N., Kim, M.S., Kan, E.C., (2000) Proc. IEDM, 87 NR 20140805

Published
2002

40. Gold nanoparticle single-electron transistor with carbon nanotube leads

Author

Nygård, J., Thelander, Claes, Magnusson, Martin, Deppert, K., Samuelson, Lars, Poulsen, Per Rugaard, Borggreen, J., Nygård, J., Thelander, Claes, Magnusson, Martin, Deppert, K., Samuelson, Lars, Poulsen, Per Rugaard, and Borggreen, J.

Abstract

Udgivelsesdato: 24 Sep.

Published
2001

42. Precursor evaluation forin situInP nanowire doping

Author

Borgström, M T, primary, Norberg, E, additional, Wickert, P, additional, Nilsson, H A, additional, Trägårdh, J, additional, Dick, K A, additional, Statkute, G, additional, Ramvall, P, additional, Deppert, K, additional, and Samuelson, L, additional

Published
2008
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50. Nanowire resonant tunneling diodes

Author

Björk, M. T., primary, Ohlsson, B. J., additional, Thelander, C., additional, Persson, A. I., additional, Deppert, K., additional, Wallenberg, L. R., additional, and Samuelson, L., additional

Published
2002
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