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455 results on '"Deppe, D."'

1. Spectrally-modified frequency-swept pulses for optically-driven quantum light sources

Author

Wilbur, G. R., Binai-Motlagh, A., Clarke, A., Ramachandran, A., Milson, N., Healey, J. P., O'Neal, S., Deppe, D. G., and Hall, K. C.

Subjects
Quantum Physics, Condensed Matter - Mesoscale and Nanoscale Physics
Abstract

We present a driving scheme for solid-state quantum emitters using frequency-swept pulses containing a spectral hole resonant with the optical transition in the emitter. Our scheme enables high-fidelity state inversion, exhibits robustness to variations in the laser pulse parameters and is immune to phonon-mediated excitation-induced dephasing, benefits that derive from the the insensitivity of the adiabaticity condition to variations in the experimental parameters. Our resonant driving approach could be combined with spectral filtering of the scattered pump light and photonic devices for enhanced collection efficiency to realize simultaneous high indistinguishability and brightness in single photon source applications.

Published
2022

2. Suppression of Decoherence tied to Electron-Phonon Coupling in Telecom-Compatible Quantum Dots: Low-threshold Reappearance Regime for Quantum State Inversion

Author

Ramachandran, A., Wilbur, G. R., O'Neal, S., Deppe, D. G., and Hall, K. C.

Subjects
Condensed Matter - Mesoscale and Nanoscale Physics
Abstract

We demonstrate full suppression of dephasing tied to deformation potential coupling of confined electrons to longitunidal acoustic (LA) phonons in optical control experiments on large semiconductor quantum dots (QDs) with emission compatible with the low-dispersion telecommunications band at 1.3~$\mu$m. By exploiting the sensitivity of the electron-phonon spectral density to the size and shape of the QD, we demonstrate a four-fold reduction in the threshold pulse area required to enter the decoupled regime for exciton inversion using adiabatic rapid passage (ARP). Our calculations of the quantum state dynamics provide good agreement with our experimental results and indicate that the symmetry of the QD wave function provides an additional means to engineer the electron-phonon interaction. Our findings will support the development of solid-state quantum emitters in future distributed quantum networks using semiconductor QDs.

Published
2020
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3. Buried heterostructure vertical-cavity surface-emitting laser with semiconductor mirrors

Author

Zhao, G., Zhang, Y., Deppe, D. G., Konthasinghe, K., and Muller, A.

Subjects
Physics - Optics, Condensed Matter - Materials Science, Quantum Physics
Abstract

We report a buried heterostructure vertical-cavity surface-emitting laser fabricated by epitaxial regrowth over an InGaAs quantum well gain medium. The regrowth technique enables microscale lateral confinement that preserves a high cavity quality factor (loaded $Q\approx$ 4000) and eliminates parasitic charging effects found in existing approaches. Under optimal spectral overlap between gain medium and cavity mode (achieved here at $T$ = 40 K) lasing was obtained with an incident optical power as low as $P_{\rm th}$ = 10 mW ($\lambda_{\rm p}$ = 808 nm). The laser linewidth was found to be $\approx$3 GHz at $P_{\rm p}\approx$ 5 $P_{\rm th}$.

Published
2012
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4. Coherently driven non-classical light emission from a quantum dot

Author

Muller, A., Flagg, E. B., Bianucci, P., Deppe, D. G., Ma, W., Zhang, J., Salamo, G. J., and Shih, C. K.

Subjects
Condensed Matter - Mesoscale and Nanoscale Physics
Abstract

Narrow line-widths and the possibility of enhanced spontaneous emission via coupling to microcavities make semiconductor quantum dots ideal for harnessing coherent quantum phenomena at the single photon level. So far, however, all approaches have relied on incoherent pumping, which limits the desirable properties of the emission. In contrast, coherent excitation was recognized to be necessary for providing both improved photon indistinguishability and high efficiency, and offers the quantum control capabilities required for basic qubit manipulations. Here we achieve, for the first time, resonant and coherent excitation of a quantum dot with simultaneous collection of the non-classical photon emission. Second-order correlation measurements show the unique signature of a coherently-driven two-level quantum emitter: the photon statistics become oscillatory at high driving fields, reflecting the coherent evolution of the excitonic ground state of the quantum dot., Comment: 12 pages, 5 figures, submitted to Nature Photonics

Published
2007

5. Efficient electron spin detection with positively charged quantum dots

Author

Gundogdu, K., Hall, K. C., Boggess, Thomas F., Shchekin, O. B., and Deppe, D. G.

Subjects
Condensed Matter - Materials Science
Abstract

We report the application of time- and polarization-resolved photoluminescence up-conversion spectroscopy to the study of spin capture and energy relaxation in positively and negatively charged, as well as neutral, InAs self-assembled quantum dots. When compared to the neutral dots, we find that carrier capture and relaxation to the ground state is much faster in the highly charged dots, suggesting that electron-hole scattering dominates this process. The long spin lifetime, short capture time, and high radiative efficiency of the positively charged dots, indicates that these structures are superior to both quantum well and neutral quantum dot light-emitting diode (LED) spin detectors for spintronics applications.

Published
2003
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15. Vacuum Rabi splitting with a single quantum dot in a photonic crystal nanocavity

Author

Yoshie, T., Scherer, A., Hendrickson, J., Khitrova, G., Gibbs, H. M., Rupper, G., Ell, C., Shchekin, O. B., and Deppe, D. G.

Subjects
Environmental issues, Science and technology, Zoology and wildlife conservation
Abstract

Author(s): T. Yoshie [1]; A. Scherer [1]; J. Hendrickson [2]; G. Khitrova (corresponding author) [2]; H. M. Gibbs [2]; G. Rupper [2]; C. Ell [2]; O. B. Shchekin [3]; D. [...]

Published
2004
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22. Low-threshold disorder-defined buried-heterostructure AlxGa1-xAs-GaAs quantum well lasers.

Author

Deppe, D. G., Hsieh, K. C., Holonyak, N., Burnham, R. D., and Thornton, R. L.

Subjects
*QUANTUM wells, *HETEROSTRUCTURES, *SILICON
Abstract

Presents a study that used quantum well heterostructure (QWH) wafers to fabricate buried-heterostructure Al[subx]Ga[sub1-x]As-GaAs quantum well lasers using silicon-induced layer disordering. Significance of impurity-induced layer disordering; Impurity redistribution in a QWH; Description of the disorder-defined QWH lasers.

Published
1985
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23. Calculation of lifetime dependence of Er3+ on cavity length in dielectric half-wave and full-wave microcavities.

Author

Lin, C. C. and Deppe, D. G.

Subjects
*ERBIUM, *SILICA, *HOLES, *PHYSICS
Abstract

Presents information on a study which calculated angular spontaneous emission rates and lifetimes of erbium ions in silicon/silicon dioxide microcavities for cavity lengths close to full and half-wavelengths. Methodology of the study; Results and discussion; Conclusions.

Published
1994
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24. Optical gain enhancement in Fabry–Perot microcavity lasers.

Author

Lei, C. and Deppe, D. G.

Subjects
*OPTICS, *SEMICONDUCTORS
Abstract

Analyzes Fabry-Perot microcavities in terms of their light emission characteristics. Effects of controlled spontaneous emission using a semiconductor Fabry-Perot microcavity; Theory of optical gain enhancement in a semiconductor microcavity; Impact of microcavity on gain.

Published
1992
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25. Spontaneous emission from a dipole in a semiconductor microcavity.

Author

Deppe, D. G. and Lei, C.

Subjects
*SEMICONDUCTORS, *EXCITON theory, *PHOTON emission, *QUANTUM theory, *RADIATION
Abstract

Presents a study which examined the effect of a semiconductor microcavity on the radiative spontaneous recombination of an electron-hole pair strategically placed in the microcavity. Details on the quantum mechanical calculation of the spatially anisotropic radiation rate; Information on the photon emission rate from a dipole contained in a cavity; Results of the study.

Published
1991
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26. Thermal behavior and stability of room-temperature continuous AlxGa1-xAs-GaAs quantum well heterostructure lasers grown on Si.

Author

Hall, D. C., Deppe, D. G., Holonyak, N., Matyi, R. J., Shichijo, H., and Epler, J. E.

Subjects
*THERMAL analysis, *LASERS, *QUANTUM wells, *HETEROSTRUCTURES
Abstract

Presents a study that analyzed the thermal characteristics of aluminum-gallium arsenide/gallium arsenide quantum well heterostructure diode lasers grown on silicon. Measurement of the thermal impedance; Effect of degradation on the thermal characteristics of the lasers; Examination of the thermal behavior and stability of the lasers.

Published
1988
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27. Impurity diffusion and layer interdiffusion in AlxGa1-xAs-GaAs heterostructures.

Author

Deppe, D. G., Holonyak, N., Plano, W. E., Robbins, V. M., Dallesasse, J. M., Hsieh, K. C., and Baker, J. E.

Subjects
*METAL inclusions, *GALLIUM arsenide, *HETEROSTRUCTURES
Abstract

Presents a study that investigated impurity diffusion and layer interdiffusion in Al[sub x] Ga[sub1-x] As-GaAs heterostructures. Experimental procedure; Results and discussion.

Published
1988
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28. ZnSe/CaF2 quarter-wave Bragg reflector for the vertical-cavity surface-emitting laser.

Author

Lei, C., Rogers, T. J., Deppe, D. G., and Streetman, B. G.

Subjects
ELECTRON beams, SELENIDES, FLUORIDES, LASERS, OPTICAL reflection
Abstract

Presents data on an electron-beam evaporated zinc selenide/calcium difluoride distributed Bragg reflector for use on a vertical-cavity surface-emitting laser. Comparison of the characteristics of the zinc selenide/calcium difluoride quarter-wave stack with the structures of electron-beam evaporated silicon/silicon dioxide reflectors; Experimental technique used in the study; Results and discussion.

Published
1991
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29. Low-temperature operating life of continuous 300-K AlxGa1-xAs-GaAs quantum-well heterostructure lasers grown on Si.

Author

Hall, D. C., Holonyak, N., Deppe, D. G., Ries, M. J., Matyi, R. J., Shichijo, H., and Epler, J. E.

Subjects
QUANTUM wells, ALUMINUM compounds, LASERS, SILICON
Abstract

Presents data on the continuous (cw) operational characteristics of low-temperature aluminum gallium arsenic gallium arsenide quantum well heterostructure diode lasers grown on silicon substrates. Demonstration of the operation; Indications of the data provided; Discussion on the effects of naturally occurring microcracks on device stability.

Published
1991
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30. Thermal annealing and photoluminescence measurements on AlxGa1-xAs-GaAs quantum-well heterostructures with Se and Mg sheet doping.

Author

Kaliski, R. W., Nam, D. W., Deppe, D. G., Holonyak, N., Hsieh, K. C., and Burnham, R. D.

Subjects
PHOTOLUMINESCENCE, QUANTUM wells, HETEROSTRUCTURES, ALUMINUM compounds, GALLIUM arsenide
Abstract

Studies the thermal annealing and photoluminescence measurements on aluminum and gallium arsenide compound quantum-well heterostructures (QWH) with selenium and manganese sheet doping. Applications of QWH; Details on the experimental procedures; Discussion on the experimental results.

Published
1987
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31. Temperature dependence of the transverse lasing mode in vertical-cavity lasers.

Author

Deng, H., Lin, C. C., Huffaker, D. L., Deng, Q., Deppe, D. G., and Rogers, T. J.

Subjects
LASERS, OPTOELECTRONIC devices, TEMPERATURE
Abstract

Presents information on a study which described the near-threshold transverse modes in AlAs/GaAs/InGaAs vertical-cavity surface-emitting lasers with different Bragg reflector systems. Temperature dependence of the lasing mode; Aspects of the lasing behavior; Experimental details; Results and discussion; Conclusions.

Published
1995
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32. Room temperature spontaneous emission in five-micron-long Fabry–Pérot vertical cavities.

Author

Lei, C., Pinzone, C. J., Huang, Z., Huffaker, D. L., Deppe, D. G., and Dupuis, R. D.

Subjects
MOLECULAR emission cavity analysis, FABRY-Perot interferometers, TEMPERATURE, SEMICONDUCTORS
Abstract

Presents an analysis of room temperature spontaneous emission in AlGaAs/GaAs Fabry-P é rot vertical cavities with thin GaAs active regions. Calculations of the spontaneous emission characteristics for semiconductor microcavity structures; Facts on the measured transmission spectrum of the vertical cavities; Effects of the precise placement and thickness of the GaAs active region on spontaneous emission.

Published
1993
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33. Spectral interference effects in the light emission from Fabry–Perot cavities.

Author

Lei, C., Huang, Z., Deppe, D. G., Pinzone, C. J., and Dupuis, R. D.

Subjects
OPTICAL interference, FABRY-Perot interferometers, REFLECTANCE
Abstract

Presents a study on the emission characteristics from a Fabry-Perot cavity containing dipoles that are localized at a distance λ/4 away from one of the cavity reflectors, where &lambda is the emission wavelength. Model of a single spontaneous emission event; Comparison of measurements with calculations for the same Fabry-Perot cavity with different cavity mirror reflectivities; Standard description of the Fabry-Perot characteristics in terms of transmission modes.

Published
1993
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41. Saturation of normal-mode coupling in aluminum-oxide-aperture semiconductor nanocavities.

Author

Lee, E. S., Ell, C., Brick, P., Spiegelberg, Ch., Gibbs, H. M., Khitrova, G., Deppe, D. G., and Huffaker, D. L.

Subjects
ALUMINUM oxide, SEMICONDUCTORS
Abstract

The photon density required for the saturation of normal-mode coupling in oxide-apertured nanocavities is measured to be 90 photons/μm2 by pump-probe experiments. The photon number is only 300 for a semiconductor nanocavity with a 2 μm diameter aluminum-oxide aperture, drastically reduced from 200 000 for a 50 μm waist on a planar microcavity. © 2001 American Institute of Physics. [ABSTRACT FROM AUTHOR]

Published
2001
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45. AlGaAs-GaAs and AlGaAs-GaAs-InGaAs vertical cavity surface emitting lasers with Ag mirrors.

Author

Deppe, D. G., Cho, A. Y., Huang, K. F., Fischer, R. J., Tai, K., Schubert, E. F., and Chen, J. F.

Subjects
*LASERS, *GALLIUM arsenide
Abstract

Describes vertical cavity surface emitting (VCSE) lasers of gallium arsenide (GaAs) active regions and In[sub0.1]Ga[sub0.9]As-GaAs active regions. Purpose of the silver mirror; Information on the room temperature spectral characteristics of the VSCE.

Published
1989
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