1. Residual stress characterizations in silicon-on-sapphire (SOS) thin film systems
- Author
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Zhang, Liangchi, Mechanical & Manufacturing Engineering, Faculty of Engineering, UNSW, Ruan, Haihui, Department of Mechanical Engineering, Hong Kong University of Science and Technology, Pramanik, Alokesh , Department of Mechanical Engineering, Curtin University, Liu, Mei, Mechanical & Manufacturing Engineering, Faculty of Engineering, UNSW, Zhang, Liangchi, Mechanical & Manufacturing Engineering, Faculty of Engineering, UNSW, Ruan, Haihui, Department of Mechanical Engineering, Hong Kong University of Science and Technology, Pramanik, Alokesh , Department of Mechanical Engineering, Curtin University, and Liu, Mei, Mechanical & Manufacturing Engineering, Faculty of Engineering, UNSW
- Abstract
As one of most promising candidates in silicon-on-insulator (SOI) system, silicon-on-sapphire (SOS) can significantly improve the performance of silicon wafer. The main challenges in producing high quality SOS wafers are the excessive residual stresses and defects due to film/substrate mismatches. The present research aims to establish a comprehensive experimental system for characterizing both residual stresses and micro-structural defects, and provide more in-depth understandings of the residual stress mechanism. In residual stress measurement, the complete stress tensors were reliably obtained by optimized diffraction planes, and a equi-biaxial stress state was identified. The thickness-dependent stresses were uncovered by Raman on the chemical etched samples. When the film is less than 700 nm, we observed an obvious stress increase with reduced thickness, manifesting interface lattice mismatch effects. A systematic approach was proposed in multilayer stress analysis by X-Ray diffraction (XRD) techniques. The stress was found independent with subsequent depositions, but only determined by the film/substrate mismatch. To uncover the misfit release mechanism, we examined the micro-structures by Transmission Electron Microscopy (TEM). The results reveal that misfit dislocation is most influential to stress release. A finite element analysis incorporating experimental observations proves that residual stresses in thin-film are caused by coupled effects of thermal-lattice mismatches and misfit dislocations, and the discrete distribution of dislocations plays a key role in thickness dependency of stresses. The ex-situ XRD stress measurement at elevated temperatures reveals the actual stresses accumulation upon cooling, which shows an overall consistency with the theoretical thermal stresses. At deposition temperature, the compressive stress in thinner film confirms the residual lattice mismatch effect, whereas the tensile stress observed in thick film evidences the pos
- Published
- 2013