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Background: Aesthetics medicine, a controversial branch of clinical medicine known for its high degree of commercialization, faces numerous conflicts, particularly in some developing countries. The global aesthetics medicine industry requires enhancements of its legal and supervision framework and risk management systems. Aims: This paper aimed to provide a comprehensive visual analysis of academic achievements related to regulatory and legal issues in the field of aesthetic medicine and to identify its development trends and research hotspots. Methods: The Web of Science Core Collection was employed to retrieve relevant studies, resulting in a total of 602 research articles after selection. Utilizing bibliometric methods and CiteSpace, this study analyzed the primary countries, institutions, authors, journals, hotspots, frontiers, and trends in this domain. Results: The findings indicated rapid increases in the number of published papers. The United States emerged as the leading contributor with 131 research papers and the highest intermediate centrality. Eleven keyword clusters were identified, with "adolescence" and "office‐based surgery" being the most recent topics. We also analyzed the trends and frontiers of legal research in medical aesthetics. Conclusion: The importance of informed consent has been increasingly emphasized, and research in the field of medical aesthetics has been gradually expanding beyond individual cosmetic procedures. The management system has become more comprehensive, moreover, guidelines and medical laws have been continually published, with research shifting toward a holistic perspective that encompasses patients, medical aesthetic providers, and regulatory authorities in the study of medical aesthetics regulation and legislation. This paper also proposes some innovative directions for future research and applications. [ABSTRACT FROM AUTHOR]

III-nitride heterostructure-based metal–insulator–semiconductor high-electron-mobility transistors (MIS-HEMTs), compared with Schottky and p-GaN gate HEMTs, have demonstrated significant potential in the next-generation high-power electronic devices due to their exceptional gate reliability. This study presents a comprehensive investigation of threshold voltage (VTH) instability in III-nitride heterostructure-based MIS-HEMTs, with a specific emphasis on the interfaces of the multi-heterostructures. Two widely studied amorphous materials, namely, Al2O3 and SiNx, have been extensively examined as primary gate insulators in GaN-based MIS-HEMTs. To efficiently remove native oxides from the (Al)GaN surface, a novel in situ high-temperature remote plasma pretreatment (RPP) technique has been developed. This technique involves sequential application of NH3/N2 plasmas on the (Al)GaN surface before depositing the gate insulators using plasma-enhanced atomic layer deposition. The remarkable RPP process has proven to be a highly effective method for revealing atomic steps on the GaN surface, irrespective of whether the surface has undergone oxidation or etching processes. To further enhance the interface quality and potentially reduce bulk traps in the gate insulator, optimization of deposition temperature and post-deposition annealing conditions have been explored. Additionally, an electron-blocking layer, such as SiON, is incorporated into the MIS-HEMTs to prevent electron injection into bulk traps within the insulator. Novel characterization techniques including constant-capacitance and isothermal-mode deep-level transient spectroscopy have also been developed to explore the failure mechanisms in MIS-HEMTs. These techniques allow for the differentiation between bulk traps in the GaN epitaxy and those present within the gate insulators. This in-depth physical understanding provides valuable insights into the sources of failure in GaN-based MIS-HEMTs. [ABSTRACT FROM AUTHOR]

To summarise research studies on scar laser therapy since the 21st century using bibliometric methods, and to speculate on the possible development in the future. The literature about scar laser therapy in Web of Science database was searched. CiteSpace and VOSviewer were used to analyse main countries, institutions, journals，subject hotspots and trends, etc. A total of 884 papers have been published since the 21st century. These publications were written by 653 authors from 515 institutions in 58 countries. The United States published 287 papers in this field and ranks first. Laser in Surgery and Medicine is the most widely published journal, with Shumaker as the core author. The main keyword clustering includes terms such as combination therapy, wound healing, fractional photothermolysis, experience, scar formation, etc. CiteSpace and VOSviewer were used to sort out and summarise the countries, institutions, authors, journals, research hotspots and frontier topics of related literature about scar laser therapy since the 21st century. The current situation of its application and basic scientific research in clinical treatments were summarised briefly. This provides a new idea for the development and research of scar laser therapy in the future. [ABSTRACT FROM AUTHOR]

Previous studies examining the relationship between ingroup bias and resource scarcity have produced heterogeneous findings, possibly due to their focus on the allocation of positive resources (e.g. money). This study aims to investigate whether ingroup bias would be amplified or eliminated when perceived survival resources for counteracting negative stimuli are scarce. For this purpose, we exposed the participants and another confederate of the experimenters (ingroup/outgroup member) to a potential threat of unpleasant noise. Participants received some 'relieving resources' to counteract noise administration, the amount of which may or may not be enough for them and the confederate in different conditions (i.e. abundance vs. scarcity). First, a behavioural experiment demonstrated that intergroup discrimination manifested only in the scarcity condition; in contrast, the participants allocated similar amounts of resource to ingroup and outgroup members in the abundance condition, indicating a context‐dependent allocation strategy. This behavioural pattern was replicated in a follow‐up neuroimaging experiment, which further revealed that when contrasting scarcity with abundance, there was higher activation in the anterior cingulate cortex (ACC) as well as stronger functional connectivity of the ACC with the empathy network (including the temporoparietal junction and medial prefrontal cortex) for ingroup compared to outgroup members. We suggest that ACC activation reflects the mentalizing process toward ingroup over outgroup members in the scarcity condition. Finally, the ACC activation level significantly predicted the influence of resource scarcity on ingroup bias in hypothetical real‐life situations according to a follow‐up examination. [ABSTRACT FROM AUTHOR]

Green port construction has a profound impact on China's international climate commitment to carbon neutrality by 2050. To examine the carbon emission reduction potential of 20 major ports in the Yangtze River Delta port cluster of China, this study takes the perspective of environmental efficiency and employs dynamic exogenous variable DEA in efficiency evaluation. The results show the increasing environmental efficiency of the ports in the Yangtze River Delta, rising from 0.5116 in 2013 to 0.7276 in 2019. Also, there are significant spatial differences in efficiency. After considering exogenous variable, the average efficiency has increased from 0.5537 to 0.6276, indicating that regional green development is a critical factor in port environmental efficiency evaluation. Finally, the overall efficiency of input and output have risen, the slackness of carbon emission shows a trend of decreasing, and there is great potential for reducing carbon emissions from the perspective of port environmental efficiency. The previous studies paid less attention to dynamic efficiency, exogenous variables, and carbon emission. Therefore, this paper is the first comprehensive examination on the carbon emission reduction potential of China's Yangtze River Delta port cluster from the perspective of dynamic environmental efficiency. [ABSTRACT FROM AUTHOR]

Rapid-thermal-chemical-vapor-deposition (RT-CVD) SiNx gate dielectric was utilized for the fabrication of enhancement-mode GaN-based metal–insulator–semiconductor high electron mobility transistors (MIS-HEMTs) on ultrathin-barrier AlGaN/GaN heterostructure. A plasma-enhanced-atomic-layer-deposited (PEALD) SiNx interfacial layer was adopted to mitigate the high-temperature RTCVD process-induced degradation of the dielectric/III-nitride interface. Based on the dc- and pulsed transfer measurement results, the device with the PEALD-SiNx interfacial layer exhibits low ${V}_{\text {TH}}$ -hysteresis (0.1 V at ${V}_{\text {GS}} = 1, 10$ V) and low interface trap density. Constant-capacitance deep-level transient spectroscopy and high-resolution transmission electron microscopy were also conducted to confirm the improvement of the interface quality. [ABSTRACT FROM AUTHOR]