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1. 3D Stacked Devices and MOL Innovations for Post-Nanosheet CMOS Scaling

2. Nanosheet-based Complementary Field-Effect Transistors (CFETs) at 48nm Gate Pitch, and Middle Dielectric Isolation to enable CFET Inner Spacer Formation and Multi-Vt Patterning

4. Scaled FinFETs Connected by Using Both Wafer Sides for Routing via Buried Power Rails

5. Low-Voltage Scaled 6T FinFET SRAM Cells

8. Reliability of Barrierless PVD Mo

14. Buried Power Rail Scaling and Metal Assessment for the 3 nm Node and Beyond

15. First Monolithic Integration of 3D Complementary FET (CFET) on 300mm Wafers

16. Buried Power Rail Integration with Si FinFETs for CMOS Scaling beyond the 5 nm Node

17. 3D Sequential Low Temperature Top Tier Devices using Dopant Activation with Excimer Laser Anneal and Strained Silicon as Performance Boosters

22. The reliability margin of interconnects for advanced memory technologies

24. Buried power rail integration for CMOS scaling beyond the 3 nm node

26. Buried metal line compatible with 3D sequential integration for top tier planar devices dynamic Vth tuning and RF shielding applications

27. High performance strained Germanium Gate All Around p-channel devices with excellent electrostatic control for sub-Jtlnm LG

34. Longitudinal spin-density-wave ordering in thin epitaxial chromium layers

37. First Demonstration of 3D stacked Finfets at a 45nm fin pitch and 110nm gate pitch technology on 300mm wafers

40. The Complementary FET (CFET) for CMOS scaling beyond N3

42. Vertically stacked gate-all-around Si nanowire transistors: Key Process Optimizations and Ring Oscillator Demonstration

43. CMOS Integration of Thermally Stable Diffusion and Gate Replacement (D&GR) High-k/Metal Gate Stacks in DRAM Periphery Transistors

44. Ultralow resistive wrap around contact to scaled FinFET devices by using ALD-Ti contact metal

46. Improvement of the CMOS characteristics of bulk Si FinFETs by high temperature ion implantation

47. Vertically stacked gate-all-around Si nanowire CMOS transistors with dual work function metal gates

48. Heterostructure at CMOS source/drain: Contributor or alleviator to the high access resistance problem?

49. Towards high performance sub-10nm finW bulk FinFET technology

50. Electrical Characteristics of p-Type Bulk Si Fin Field-Effect Transistor Using Solid-Source Doping With 1-nm Phosphosilicate Glass

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