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Your search keyword '"Dellas, N. S."' showing total 8 results
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8 results on '"Dellas, N. S."'

1. Measurement and simulation of anisotropic magnetoresistance in single GaAs/MnAs core/shell nanowires

Author

Liang, J., Wang, J., Paul, A., Cooley, B. J., Rench, D. W., Dellas, N. S., Mohney, S. E., Engel-Herbert, R., and Samarth, N.

Subjects
Condensed Matter - Mesoscale and Nanoscale Physics, Condensed Matter - Materials Science
Abstract

We report four probe measurements of the low field magnetoresistance in single core/shell GaAs/MnAs nanowires synthesized by molecular beam epitaxy, demonstrating clear signatures of anisotropic magnetoresistance that track the field-dependent magnetization. A comparison with micromagnetic simulations reveals that the principal characteristics of the magnetoresistance data can be unambiguously attributed to the nanowire segments with a zinc blende GaAs core. The direct correlation between magnetoresistance, magnetization and crystal structure provides a powerful means of characterizing individual hybrid ferromagnet/semiconductor nanostructures., Comment: Submitted to Applied Physics Letters; some typos corrected and a defective figure replaced

Published
2012
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3. Orientation dependence of nickel silicide formation in contacts to silicon nanowires.

Author

Dellas, N. S., Liu, B. Z., Eichfeld, S. M., Eichfeld, C. M., Mayer, T. S., and Mohney, S. E.

Subjects
*NICKEL, *SILICIDES, *NANOWIRES, *SILICON, *EPITAXY, *METALLIC films, *ANNEALING of crystals
Abstract

The orientation dependence of Ni silicide phase formation in the silicidation of silicon nanowires (SiNWs) by Ni has been studied. SiNWs with a [112] growth direction contacted by Ni pads form θ-Ni2Si for annealing conditions from 350 to 700 °C for 2 min. The θ-Ni2Si has an epitaxial orientation of θ-Ni2Si[001]∥Si[111] and θ-Ni2Si(100)∥Si(112) with the SiNW. On the other hand, SiNWs with a [111] growth direction react with Ni pads to form NiSi2 with an epitaxial orientation of NiSi2[110]∥Si[110] and NiSi2(111)∥Si(111) after annealing at 450 °C for 2 min. The [111] SiNWs were also silicided at 700 °C for 2 min, forming the low-resistivity NiSi phase. The epitaxial phases identified in the reactions of Ni films with SiNWs suggest that lattice matching at both the silicide/Si growth front and the surface of the original SiNW may play a significant role in determining the first silicide segment to grow. [ABSTRACT FROM AUTHOR]

Published
2009
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