1. A 2.4-GHz fully integrated ESD-protected low-noise amplifier in 130-nm PD SOI CMOS technology
- Author
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El Kaamouchi, Majid, Moussa, Mehdi Si, Delatte, Pierre, Wybo, Geert, Bens, A., Raskin, Jean-Pierre, and Vanhoenacker-Janvier, Danielle
- Subjects
Complementary metal oxide semiconductors -- Research ,Electrostatics -- Research ,Microwave amplifiers -- Design and construction ,Microwave transmission lines -- Properties ,Business ,Computers ,Electronics ,Electronics and electrical industries - Abstract
This paper reviews and analyzes a fully integrated electrostatic discharge (ESD)-protected low-noise amplifier (LNA) for low-power and narrowband applications using a cascode inductive source degeneration topology, designed and fabricated in 130-nm CMOS silicon-on-insulator technology. The designed LNA shows 13-dB power gain at 2.4 GHz with a noise figure of 3.6 dB and input return loss of -13 dB for power consumption of 6.5 mW. An on-chip 'plug-and-play' ESD protection strategy based on diodes and a power clamp is used at the input and output of the LNA, and has an ESD protection level up to 0.8-, 0.9-, and 1.4-A transmission line pulse current. This corresponds to 1.2-, 1.4-, and 2-kV human body model stress applied at, respectively, the RF input, RF output, and [V.sub.DD] bus. Measurement shows a minor RF performance degradation by adding the protection diodes. Index Terms--CMOS, electrostatic discharges (ESDs), low-noise amplifier (LNA), narrowband, partially depleted (PD) silicon-oninsulator (SOI), RF, transmission line pulse (TLP).
- Published
- 2007