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Thin film polycrystalline silicon (pc-Si) on flexible metallic substrates is promising for low cost production of photovoltaic solar cells. One of the attractive methods to produce pc-Si solar cells consists in thickening a large-grained seed layer by epitaxy. In this work, the deposited seed layer is made by aluminium induced crystallization (AIC) of an amorphous silicon (a-Si) thin film on metallic substrates (Ni/Fe alloy) initially coated with a tantalum nitride (TaN) conductive diffusion barrier layer. Effect of the thermal budget on the AIC grown pc-Si seed layer was investigated in order to optimize the process (i.e. the quality of the pc-Si thin film). Structural and optical characterizations were carried out using optical microscopy, μ-Raman and Electron Backscatter Diffraction (EBSD). At optimal thermal annealing conditions, the continuous AIC grown pc-Si thin film showed an average grain size around 15 μm. The grains were preferably (001) oriented which is favorable for its epitaxial thickening. This work proves the feasibility of the AIC method to grow large grains pc-Si seed layer on TaN coated metal substrates. These results are, in terms of grains size, the finest obtained by AIC on metallic substrates.

We report on a comparative study between dielectric functions of Si nanoparticles (Si-NPs) obtained from Bruggeman effective medium approximation (BEMA), Maxwell-Garnett (MG), and a modified Maxwell-Garnett (MMG) models. Unlike BEMA and MG, a size-distribution dependent dielectric function of Si-NPs is considered in the introduced MMG model. We show that the standard deviation σ of a size distribution can be evaluated by analyzing the imaginary part of the dielectric functions of Si-NPs extracted from BEMA and MMG. In order to demonstrate this, several samples composed of Si-NPs embedded in silicon-rich silicon nitride are investigated by spectroscopic ellipsometry over the photon energy range varying between 2 and 4 eV. Assuming a lognormal size distribution of the Si nanoparticles, it is evidenced that the parameter σ ranges between 1.15 and 1.35. The values of size dispersion deduced by this methodology are in good agreement with TEM observations. [ABSTRACT FROM AUTHOR]

In this paper we use spectroscopic ellipsometry to investigate the optical properties of silicon quantum dots (Si-QDs) embedded in silicon-rich silicon nitride (SRSN) films over the (1.5-5.9 eV) photon energy range. These films were elaborated by microwave plasma enhanced chemical vapor deposition for various gas flow ratio [R=(NH3) / (SiH4)]. We have analyzed the ellipsometric data using various modeling methods: Forouhi-Bloomer (FB) and Tauc-Lorentz (TL) dispersion formulas and wavelength-by-wavelength (λ-by-λ) numerical inversion. This comparative study allowed us to analyze in depth the influence of ammonia flow on the physical properties of SRSN films and Si-QDs. FB and TL models and λ-by-λ inversion have revealed that the imaginary dielectric function of the Si-QDs, is characterized by a single broad peak similar to that of amorphous silicon. The fitted band gap (Eg) and the other optical properties were found to depend on the ammonia flow. We also determined that Eg obtained by FB model seems to be less realistic than that obtained with TL dispersion formula. According to TL model, the obtained Eg values of Si-QDs varied between 1.58 and 2.07 eV with the change in R from 1.64 to 1.79. This band-gap extension is in good agreement with measurements observed by photoluminescence. [ABSTRACT FROM AUTHOR]

The spectroscopic ellipsometry technique is employed to explain the different optical properties of the nanostructured silicon quantum dots present in the Si/Si[N.sub.x] films. These properties are shown to be completely dependent on the flow of ammonia in the films.

Abstract: Si nanocrystals (Si-ncs) embedded in SiO2/SiN x multilayer structures can be of interest for optoelectronic devices such as solar cells. However, controlling the size and density of the Si-ncs is strongly requested for an efficient use in a functioning solar cell device. In this work, SiO2 and Si-rich Si3N4 (SRN) layers have been deposited alternatively on a silicon wafer in an electron cyclotron resonance plasma-enhanced chemical vapor deposition (ECR-PECVD) using N2O, NH3 and SiH4 gases. The Si-ncs can be obtained in the SRN layers after thermal annealing, thanks to the phase separation between the Si atoms in excess and the matrix. The SiO2 layers allow the Si clusters’ spatial confinement in the SRN film and are also used as a barrier of diffusion. The amount of Si atoms in excess can be controlled by the gas flow ratio. The structural characteristics of Si-ncs density have been investigated by conventional TEM and HR-TEM for different silicon nitride layer thicknesses. Their optical properties were studied by photoluminescence (PL) spectroscopy. Results clearly show a room temperature PL in the visible range, which is of interest for the solar cells applications. [Copyright &y& Elsevier]

The directed self-assembly (DSA) of block copolymers (BCPs) is a promising low-cost approach to patterning structures with critical dimensions (CDs) which are smaller than can be achieved by traditional photolithography. The CD of contact holes can be reduced by assembling a cylindrical BCP inside a patterned template and utilizing the native size of the cylinder to dictate the reduced dimensions of the hole. This is a particularly promising application of the DSA technique, but in order for this technology to be realized there is a need for three-dimensional metrology of the internal structure of the patterned BCP in order to understand how template properties and processing conditions impact BCP assembly. This is a particularly challenging problem for traditional metrologies owing to the three-dimensional nature of the structure and the buried features. By utilizing small-angle X-ray scattering and changing the angle between the incident beam and sample we can reconstruct the three-dimensional shape profile of the empty template and the residual polymer after self-assembly and removal of one of the phases. A two-dimensional square grid pattern of the holes results in scattering in both in-plane directions, which is simplified by converting to a radial geometry. The shape is then determined by simulating the scattering from a model and iterating that model until the simulated and experimental scattering profiles show a satisfactory match. Samples with two different processing conditions are characterized in order to demonstrate the ability of the technique to evaluate critical features such as residual layer thickness and sidewall height. It was found that the samples had residual layer thicknesses of 15.9 ± 3.2 nm and 4.5 ± 2.2 nm, which were clearly distinguished between the two different DSA processes and in good agreement with focused ion beam scanning transmission electron microscopy (FIBSTEM) observations. The advantage of the X-ray measurements is that FIBSTEM characterizes around ten holes, while there are of the order of 800 000 holes illuminated by the X-ray beam.

Advanced surface affinity control for grapho-epitaxy directed self-assembly (DSA) patterning is essential for providing reliable DSA-based solutions for the development of semiconductor patterning. Independent control of surface affinity between the bottom and the sidewalls of a topographical guiding structure was achieved by embedding an ultrathin layer in the guiding template stack. The implementation of an embedded layer with tunable surface properties for DSA grapho-epitaxy was evaluated and optimized on 300 mm wafers by critical dimension SEM characterization. It was demonstrated that a thin protective layer, placed between the hard mask guiding template and the embedded layer, allows the preservation of the surface properties of the embedded layer during guiding template etching. The DSA performances of this novel grapho-epitaxy integration, using a topographical template patterned with 193 nm immersion lithography, were evaluated by monitoring the success rate and the critical dimension uniformity of the shrunk contacts. FIB-STEM analyses were further carried out to analyze the residual polymer thickness on the resulting contacts. This new integration leads to the control of the polymer residual thickness (a few nanometers) and uniformity (inferior to 1 nm) at the bottom of the guiding template which will facilitate the subsequent DSA pattern transfer.

In this work, we demonstrate a full process for fabricating high aspect ratio diffraction optics for extreme ultraviolet lithography. The transmissive optics consists in nanometer scale tungsten patterns standing on flat, ultrathin (100 nm) and highly transparent (>85% at 13.5 nm) silicon membranes (diameter of 1 mm). These tungsten patterns were achieved using an innovative pseudo-Bosch etching process based on an inductively coupled plasma ignited in a mixture of SF6 and C4F8. Circular ultra-thin Si membranes were fabricated through a state-of-the-art method using direct-bonding with thermal difference. The silicon membranes were sputter-coated with a few hundred nanometers (100-300 nm) of stress-controlled tungsten and a very thin layer of chromium. Nanoscale features were written in a thin resist layer by electron beam lithography and transferred onto tungsten by plasma etching of both the chromium hard mask and the tungsten layer. This etching process results in highly anisotropic tungsten features at room temperature. The homogeneity and the aspect ratio of the advanced pattern transfer on the membranes were characterized with scanning electron microscopy after focus ion beam milling. An aspect ratio of about 6 for 35 nm size pattern is successfully obtained on a 1 mm diameter 100 nm thick Si membrane. The whole fabrication process is fully compatible with standard industrial semiconductor technology.

An innovative method to fabricate large area (up to several squared millimeters) ultrathin (100 nm) monocrystalline silicon (Si) membranes is described. This process is based on the direct bonding of a silicon-on-insulator wafer with a preperforated silicon wafer. The stress generated by the thermal difference applied during the bonding process is exploited to produce buckling free silicon nanomembranes of large areas. The thermal differences required to achieve these membranes (≥1 mm(2)) are estimated by analytical calculations. An experimental study of the stress achievable by direct bonding through two specific surface preparations (hydrophobic or hydrophilic) is reported. Buckling free silicon nanomembranes secured on a 2 × 2 cm(2) frame with lateral dimensions up to 5 × 5 mm(2) are successfully fabricated using the optimized direct bonding process. The stress estimated by theoretical analysis is confirmed by Raman measurements, while the flatness of the nanomembranes is demonstrated by optical interferometry. The successful fabrications of high resolution (50 nm half pitch) tungsten gratings on the silicon nanomembranes and of focused ion beam milling nanostructures show the promising potential of the Si membranes for X-ray optics and for the emerging nanosensor market.

In this study, a wide range of a-SiNx:H films with an excess of silicon (20 to 50%) were prepared with an electron-cyclotron resonance plasma-enhanced chemical vapor deposition system under the flows of NH3 and SiH4. The silicon-rich a-SiNx:H films (SRSN) were sandwiched between a bottom thermal SiO2 and a top Si3N4 layer, and subsequently annealed within the temperature range of 500-1100°C in N2 to study the effect of annealing temperature on light-emitting and charge storage properties. A strong visible photoluminescence (PL) at room temperature has been observed for the as-deposited SRSN films as well as for films annealed up to 1100°C. The possible origins of the PL are briefly discussed. The authors have succeeded in the formation of amorphous Si quantum dots with an average size of about 3 to 3.6 nm by varying excess amount of Si and annealing temperature. Electrical properties have been investigated on Al/Si3N4/SRSN/SiO2/Si structures by capacitance-voltage and conductance-voltage analysis techniques. A significant memory window of 4.45 V was obtained at a low operating voltage of ± 8 V for the sample containing 25% excess silicon and annealed at 1000°C, indicating its utility in low-power memory devices.

In this work, silicon-rich silicon nitride (SRN) layers were deposited on a silicon wafer by microwave-assisted plasma-enhanced chemical vapor deposition (MW-PECVD) using NH(3) and SiH(4) as precursor gases. The Si excess in the as-deposited layers as determined by the Rutherford backscattering technique was controlled by varying the precursor gas ratio. We were able to produce silicon nanoparticles (Si-nps) in the silicon nitride (SiN(x)) layers upon thermal annealing at high temperature. Energy-filtered TEM (EFTEM), complemented by photoluminescence measurements, were used to identify the experimental parameters in order to reach a high density of well-separated Si-nps (3 nm). Our results show that the MW-PECVD method is a suitable deposition tool for the formation of Si-nps in thin SRN layers.