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Impact ionization triggering can be successfully applied to standard thyristors, thus boosting their dI/dt capability by up to 1000x. This groundbreaking triggering requires applying significant overvoltage on the anode-cathode of thyristor with a slew rate > 1kV/ns. Compact pulse generators based on commercial off-the-shelf (COTS) components would allow the spread of this technology into numerous applications, including fast kicker generators for particle accelerators. In our approach, the beginning of the triggering chain is a HV SiC MOS with an ultra-fast super-boosting gate driver. The super boosting of a 1.7kV rated SiC MOS allows to reduce the MOS rise time by a factor of > 25 (datasheet tr = §I{20}{ns} vs. measured tr 800ps, resulting in an output voltage slew rate > 1kV/ns and an amplitude > 1kV. Additional boosting is obtained by a Marx generator with GaAs diodes, reaching an output voltage slew rate > 11kV/ns. The final stage will be a Marx generator with medium size thyristors triggered in impact ionization mode with sufficient voltage and current rating necessary for the triggering of a big thyristor. This paper presents the impact ionization triggering of a small size thyristor., Proceedings of the 13th International Particle Accelerator Conference, IPAC2022, Bangkok, Thailand

Pulse generators with multi kV/kA pulses are necessary for the particle accelerator environment for beam transfer magnets. Traditionally these generators are using thyratrons - until recently the only switches capable of switching such pulses within tens of ns. There is a strong demand to replace thyratrons with semiconductor switches to avoid their future obsolescence. Very promising candidates are components from the family of fast ionization dynistors triggered by impact ionization. Their sub-nanosecond switching time and extreme current densities can provide performances superior to that of thyratrons. Recent investigations showed that impact ionization triggering is feasible also in cheap industrial thyristors. The main issue is the generation of triggering pulses with slew rates in the multi kV/ns region and with the required output current for charging the parasitic capacitance of the thyristor. We present an approach of generating > 1 kV/ns pulses by ultra-boosted gate driving of HV SiC MOS transistors. We found that the MOS lifetime under these extreme triggering conditions can still reach more than 10⁸ pulses, enough for kicker generator applications., Proceedings of the 12th International Particle Accelerator Conference, IPAC2021, Campinas, SP, Brazil