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Graphene, consisting of an inert, thermally stable material with an atomically flat, dangling bond-free surface is by essence an ideal template layer for van der Waals heteroepitaxy of two-dimensional materials such as silicene. However, depending on the synthesis method and growth parameters, graphene (Gr) substrates could exhibit, on a single sample, various surface structures, thicknesses, defects, and step heights. These structures noticeably affect the growth mode of epitaxial layers, e.g. turning the layer-by-layer growth into the Volmer-Weber growth promoted by defect-assisted nucleation. In this work, the growth of silicon on chemical vapor deposited epitaxial Gr (1 ML Gr/1ML Gr buffer) on 6H-SiC(0001) substrate is investigated by a combination of atomic force microscopy (AFM), scanning tunneling microscopy (STM), x-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM) and Raman spectroscopy measurements. It is shown that the perfect control of full-scale almost defect-free 1 ML Gr with a single surface structure and the ultra-clean conditions for molecular beam epitaxy (MBE) deposition of silicon represent key prerequisites for ensuring the growth of extended silicene sheets on epitaxial graphene.

Despite the large literature focused on the growth of graphene (Gr) on 6H-SiC(0001) by chemical vapour deposition (CVD), some important issues have not been solved and full wafer scale epitaxy of Gr remains challenging, hampering applications in microelectronics. With this study we shed light on the generic mechanism which produces the coexistence of two different types of Gr domains, whose proportion can be carefully controlled by tuning the H2 flow rate. For the first time, we show that the growth of Gr using CVD under H2/Ar flow rate proceeds in two stages. Firstly, the nucleation of free-standing epitaxial graphene on hydrogen (H-Gr) occurs, then H-atoms eventually desorb from either step edges or defects. This gives rise, for H2 flow rate below a critical value, to the formation of (6x6)Gr domains on 6H-SiC(0001). The front of H-desorption progresses proportionally to the reduction of H2. Using a robust and generic X-ray photoelectron spectroscopy (XPS) analysis, we realistically quantify the proportions of H-Gr and (6x6)Gr domains of a Gr film synthetized in any experimental conditions. Scanning tunnelling microscopy supports the XPS measurements. From these results we can deduce that the H- assisted CVD growth of Gr developed here is a unique method to grow fully free-standing H-Gr on the contrary to the method consisting of H-intercalation below epitaxial Gr on buffer layer. These results are of crucial importance for future applications of Gr/SiC(0001) in nanoelectronics, providing the groundwork for the use of Gr as an optimal template layer for Van der Waals homo- and hetero-epitaxy.

A new fabrication process is developed for growing Bi2Se3 topological insulators in the form of nanowires/nanobelts and ultra-thin films. It consists of two consecutive procedures: first Bi2Se3 nanowires/nanobelts are deposited by standard catalyst free vapour-solid deposition on different substrates positioned inside a quartz tube. Then, the Bi2Se3, stuck on the inner surface of the quartz tube, is re-evaporated and deposited in the form of ultra-thin films on new substrates at temperature below 100 {\deg}C, which is of relevance for flexible electronic applications. The method is new, quick, very inexpensive, easy to control and allows obtaining films with different thickness down to one quintuple layer (QL) during the same procedure. The composition and the crystal structure of both the nanowires/nanobelts and the thin films is analysed by different optical, electronic and structural techniques. For the films, scanning tunnelling spectroscopy shows that the Fermi level is positioned in the middle of the energy bandgap as a consequence of the achieved correct stoichiometry. Ultra-thin films, with thickness in the range 1-10 QLs deposited on n-doped Si substrates, show good rectified properties suitable for their use as photodetectors in the ultra violet-visible-near infrared wavelength range, Comment: 11 pages, 8 figures, paper

Highly oriented pyrolitic graphite (HOPG) is an inert substrate with a structural honeycomb lattice, well suited for the growth of two-dimensional (2D) silicene layer. It was reported that when Si atoms are deposited on HOPG surface at room temperature, they arrange in two configurations: silicene nanosheets and three dimensional clusters. In this work we demonstrate, by using scanning tunneling microscopy (STM) and Raman spectroscopy, that a third configuration stabilizes in the form of Si 2D nanosheets intercalated below the first top layer of carbon atoms. The Raman spectra reveal a structure located at 538 cm$^{-1}$ which we ascribe to the presence of sp$^2$ Si hybridization. Moreover, the silicon deposition induces several modifications in the graphite D and G Raman modes, which we interpret as an experimental evidence of the intercalation of the silicene nanosheets. The Si atom intercalation at room temperature takes place at the HOPG step edges and it detaches only the outermost graphene layer inducing a strong tensile strain mainly concentrated on the edges of the silicene nanosheets. Theoretical calculations of the structure and energetic viability of the silicene nanosheets, of the strain distribution on the outermost graphene layer and its influence on the Raman resonances support the STM and Raman observations., Comment: 18 pages, 9 figures, 2 tables

We have taken advantage of the native surface roughness and the iron content of AISI 316 stainless steel to direct grow multi-walled carbon nanotube (MWCNT) random networks by chemical vapor deposition (CVD) at low-temperature ($< 1000^{\circ}$C), without the addition of any external catalysts or time-consuming pre-treatments. In this way, super-hydrophobic MWCNT films on stainless steel sheets were obtained, exhibiting high contact angle values ($154^{\circ}$) and high adhesion force (high contact angle hysteresis). Furthermore, the investigation of MWCNT films at scanning electron microscopy (SEM) reveals a two-fold hierarchical morphology of the MWCNT random networks made of hydrophilic carbonaceous nanostructures on the tip of hydrophobic MWCNTs. Owing to the Salvinia effect, the hydrophobic and hydrophilic composite surface of the MWCNT films supplies a stationary super-hydrophobic coating for conductive stainless steel. This biomimetical inspired surface not only may prevent corrosion and fouling but also could provide low-friction and drag-reduction., Comment: 6 pages, 3 figures

Self-assembled hierarchical solid surfaces are very interesting for wetting phenomena, as observed in a variety of natural and artificial surfaces. Here, we report single-walled (SWCNT) and multi-walled carbon nanotube (MWCNT) thin films realized by a simple, rapid, reproducible, and inexpensive filtration process from an aqueous dispersion, that was deposited at room temperature by a dry-transfer printing method on glass. Furthermore, the investigation of carbon nanotube films through scanning electron microscopy (SEM) reveals the multi-scale hierarchical morphology of the self-assembled carbon nanotube random networks. Moreover, contact angle measurements show that hierarchical SWCNT/MWCNT composite surfaces exhibit a higher hydrophobicity (contact angles of up to 137{\deg}) than bare SWCNT (110{\deg}) and MWCNT (97{\deg}) coatings, thereby confirming the enhancement produced by the surface hierarchical morphology., Comment: 7 pages, 5 figures, This article is part of the Thematic Series "Self-assembly of nanostructures and nanomaterials"