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Common failure mechanisms in microelectronics such as electromigration, creep and fatigue can be positively influenced by microstructure optimization. In this paper a new mechanism of microstructure optimization in thin metal films is proposed. Post-deposition ion bombardment can produce an in-plane texture in originally highly fiber textured thin metal films by a selective grain growth process. In extreme cases the in-plane texture becomes as sharp as the out-of-plane fiber texture. A subset of grains oriented for ion channeling was found to grow significantly at the expense of the remaining grain fraction. We studied the selective grain growth as a function of ion species (N+, Ne+, Ar+), ion energy (1–3.5 MeV) and target temperature (liquid nitrogen to 400 °C). In a textured thin film the degree of preferred in-plane orientation can be strongly influenced by ion bombardment, and therefore this technique has the potential to become a powerful tool for the enhancement of reliability in micro- and nanosystems.