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We report on a two-dimensional optical phased arrays with circular configurations to effectively suppress the grating sidelobes down to 10 dB, while enlarging the steering range to 0.24π and narrowing the angular beamwidths to 0.5°.

The fast signal transmission is critical long-haul communication systems. They represent the key advancements, shaping information-communication technologies. Fiber-optic transmission suffers from many degradation effects, and of particular concern are stochastic fiber impairments represented by polarization mode dispersion (PMD). The PMD is critical as it limits link operation at data rates higher than 10 Gbps. In this work, we report on experimental measurements and theoretical analysis characterization for PMD-based propagation effects in optical fibers influenced by wind gusts. The study was performed on fiber-optic link that runs through 111-km-long optical power ground wire cables. Measured maximum of DGD was up to 10 ps for a wind speed of 20 m/s. This wind condition, the optical link maintained a reliable operation only for established 10 Gbps, while considerable link degradation was seen for data rates of between 40 and 100 Gbps.

On-chip avalanche photodetectors (APDs) are attractive for a sensitive detection of high-speed data light signals with low intensities. Silicon-germanium (Si-Ge) APDs are leading candidates to build reliable short-reach optical links. Appeal for Si-Ge APDs stems from larger (lower) gain-bandwidth (excess noise) at reduced voltages, CMOS-compliant production, and monolithic integration compared to their III-V alternatives [1] - [5] . Typically, Si-Ge APDs are metal-semiconductor-metal (MSM) [3] , separate absorption charge multiplication (SACM) [4] , or p-i-n [5] devices - each of them having their own advantages and drawbacks [1] . Although many Si-Ge APDs have appealing performances on their own, they are usually operated with other electronic components such as amplification stages, impeding low power consumption and low-cost detection on Si chips.

International audience; Sub-wavelength grating (SWG) metamaterials have garnered a great interest for their singular capability to shape the propagation of light. However, practical SWG implementations are limited by fabrication constraints, such as minimum feature size. Here, we present a new nanophotonic waveguide grating concept that exploits phase-matching engineering to suppress diffraction effects for a period three times larger than those with SWG approaches. This long-period grating not only facilitates fabrication, but also enables a new diffraction-less regime with additional degrees of freedom to control light propagation. More specifically, the proposed phase-matching engineering enables selective diffraction suppression, providing new tools to shape propagation in the grating. We harness this flexible diffraction control to yield single-mode propagation in, otherwise, highly multimode waveguides, and to implement Bragg filters that combine highly-diffractive and diffraction-less regions to dramatically increase light rejection. Capitalizing on this new concept, we experimentally demonstrate a Si membrane Bragg filter with record rejection value exceeding 60 dB. These results demonstrate the potential of the proposed long-period grating for the engineering of diffraction in nanophotonic waveguides and pave the way for the development of a new generation of high-performance Si photonics devices. Silicon photonics is widely recognized as an enabling technology for next generation optical interconnects, holding the promise of providing ultra-compact and low power consumption opto-electronic transceivers, fabricated at large volumes leveraging existing CMOS facilities 1. Driven by the impressive technological development over the recent years, silicon photonics is expanding its frontiers towards new applications beyond datacom 2. These include, among others, chemical and biological sensing 3 , radio-over-fiber 4 , spectroscopy 5 , and quantum cryptography 6. In this very diverse ecosystem, combining demanding optical interconnects with disruptive new applications , sub-wavelength grating (SWG) engineering has gained momentum due to its unmatched flexibility in controlling the propagation of light in nanophotonic devices 7,8. SWG metamaterial waveguides rely on periodic silicon patterning, with a structural period shorter than half the wavelength, to synthesize refractive index and chromatic dispersion that can, in principle, be engineered at will 9,10. Unlike photonic crystals that rely on resonant light confinement 11 , SWG waveguides operate well below the bandgap, guiding light by (synthetic) refractive index difference. This way, they provide flexible control over modal confinement, birefringence and dispersion, non-achievable in conventional waveguide arrangements, alongside with low propagation loss and remarkably wide spectral bandwidth 9,10,12,13. These key advantages allowed the demonstration of several SWG-based devices

Segmenting silicon waveguides at the subwavelength scale produce an equivalent homogenous material. The geometry of the waveguide segments provides precise control over modal confinement, effective index, dispersion and birefringence, thereby opening up new approaches to design devices with unprecedented performance. Indeed, with ever-improving lithographic technologies offering sub-100-nm patterning resolution in the silicon photonics platform, many practical devices based on subwavelength structures have been demonstrated in recent years. Subwavelength engineering has thus become an integral design tool in silicon photonics, and both fundamental understanding and novel applications are advancing rapidly. Here, we provide a comprehensive review of the state of the art in this field. We first cover the basics of subwavelength structures, and discuss substrate leakage, fabrication jitter, reduced backscatter, and engineering of material anisotropy. We then review recent applications including broadband waveguide couplers, high-sensitivity evanescent field sensors, low-loss devices for mid-infrared photonics, polarization management structures, spectral filters, and highly efficient fiber-to-chip couplers. We finally discuss the future prospects for subwavelength silicon structures and their impact on advanced device design.

The fast transmission of signals around the globe is fundamental to the flow of information for our society. A long-haul transmission certainly represents one of the key advancements that shaped modern ways of communicating and offers a nearly instant access to any available data or a latest information. However, fiber-optic transmission typically suffers from a variety of physical impairments that degrade the signal quality, thus imposing limits on both, the achievable transmission capacity and data reach. Of particular concerns are stochastic fiber impairments, primarily represented by polarization mode dispersion (PMD). The PMD originates from a random birefringence caused by imperfect fiber circularity and other, both internal and external, effects, basically completely re-defining the light polarization state of output signal compared to its initial counterpart. The PMD is particularly critical as it restricts operation of fiber-optic links running at speeds higher than 10 Gbps. This, in turn, hinders fiber link re-adaption towards higher transmission bit rates in future, however. In this context, both in-line link monitoring and testing of PMD-based effects is of great importance within the recently used optical fiber links. However, polarization-based effects are also very sensitive to the environmental changes, substantially degrading transmitted optical signals and reducing link quality. In this work, we provide experimental characterization for PMD-based propagation effects in optical fibers influenced by wind gusts. The investigation was performed on commercially used fiber-optic link that runs through optical power ground wire cables. The 111-km-long optical link under study comprised installed optical fibers with available 88 channels. Here, we monitored environmental changes caused by wind conditions over several consecutive days with a 60 second time frame and sensed PMD impact on the link performance. Here, differential group delay (DGD) was chosen to be a key parameter, enabling for sensitive characterization of wind related link changes. Measured maximum DGD’s were 4 and 10 ps for wind speeds up to 5 and 20 m/s, respectively. In addition, experimentally measured data were used in numerical model to assess the optical link quality. For a low wind condition, we observed negligible quality degradation in the optical link, considering transmission bit rates of 10, 40, and 100 Gbps. Conversely, in case of strong wind condition, the optical link maintained a reliable operation only for established 10 Gbps, while significant link degradation was observed for bit rates of 40 and 100 Gbps. Our work shows promising way to effectively sense and monitor undesired environmental variations and their impact on polarization-based fiber link propagation effects, which in turn, can allow an instant link quality evaluation.

Integrated silicon nanophotonics has progressed a lot over past decades with great promises for many surging applications in optoelectronics, information and communication technologies, sensing or health monitoring. Enabling low-cost, dense integration, and compatibility with modern semiconductor nanofabrication processes, silicon nanophotonics deliver compact and high-performance devices on single chips. A variety of nanophotonic functionalities, both passive and active, are nowadays available on semiconductor substrates, leveraging the maturity of open-access silicon foundries and epitaxial germanium integration. It encompasses essential functions such as light generation and amplification, fast electro-optical modulation, and reliable conversion of optical into electrical signals. Germaniumbased optical photodetectors are main building blocks within the library of integrated silicon nanophotonics, with performances that are nowadays on par with their III-V-based counterparts. Germanium photodetectors integrated at the end of waveguides are attractive for next-generation on-chip interconnections, because of their compactness, bandwidth and speed, energy consumption and cost. In this work, we present our latest advances on silicon-germanium p-i-n waveguide-integrated photodetectors based on lateral silicon-germanium-silicon heterojunctions. Our hetero-structured photodetectors were fabricated on top of 200-mm silicon-on-insulator substrates using industrial-scale fabrication processes compatible with complementary metal-oxide-semiconductor technology. Silicon-germanium p-i-n photodetectors operated under low bias voltages exhibited low dark-currents (~100 nA), cut-off frequencies beyond 50 GHz, and photo-responsivities of about 1.2 A/W. Photodetector sensitivities of -14 dBm and -11 dBm were achieved for communication data rates of 10 Gbps and 25 Gbps, respectively. P-i-n photodetectors with lateral heterojunction operated in an avalanche regime offered an additional degree of freedom to improve device performances. High-speed and low-noise characteristics were obtained in our p-i-n photodetectors upon avalanche operation, with a gain-bandwidth product of 210 GHz and a low carrier impact ionization ratio of about 0.25. The measured sensitivity of avalancheoperated devices was -11 dBm for 40 Gbps signal detection. As demonstrated in the reported achievements, heterostructured p-i-n photodetectors are thus suitable communication devices in future intra-data center links or high-speed optical interconnects.

Integrated silicon nanophotonics has rapidly established itself as intriguing research field, whose outlets impact numerous facets of daily life. Indeed, nanophotonics has propelled many advances in optoelectronics, information and communication technologies, sensing and energy, to name a few. Silicon nanophotonics aims to deliver compact and high-performance components based on semiconductor chips leveraging mature fabrication routines already developed within the modern microelectronics. However, the silicon indirect bandgap, the centrosymmetric nature of its lattice and its wide transparency window across optical telecommunication wavebands hamper the realization of essential functionalities, including efficient light generation/amplification, fast electro-optical modulation, and reliable photodetection. Germanium, a well-established complement material in silicon chip industry, has a quasi-direct energy band structure in this wavelength domain. Germanium and its alloys are thus the most suitable candidates for active functions, i.e. bringing them to close to the silicon family of nanophotonic devices. Along with recent advances in silicon–germanium-based lasers and modulators, short-wave-infrared receivers are also key photonic chip elements to tackle cost, speed and energy consumption challenges of exponentially growing data traffics within next-generation systems and networks. Herein, we provide a detailed overview on the latest development in nanophotonic receivers based on silicon and germanium, including material processing, integration and diversity of device designs and arrangements. Our Review also emphasizes surging applications in optoelectronics and communications and concludes with challenges and perspectives potentially encountered in the foreseeable future.

Polarization mode dispersion is recognized as a key factor limiting optical transmission systems, particularly those fiber links that run at bit rates beyond 10 Gbps. In-line test and characterization of polarization mode dispersion are thus of critical importance to evaluate the quality of installed optical fibers that are in use for high-speed signal traffics. However, polarization-based effects in optical fibers are stochastic and quite sensitive to a range of environmental changes, including optical cable movements. This, in turn, gives rise to undesired variations in light polarization that adversely impair the quality of the signal transmission in the link. In this work, we elaborate on experimental testing and theoretical analysis to asses changes of polarization mode dispersion in optical fibers that are caused by environmental variations, here wind gusts in particular. The study was performed on commercially harnessed optical fibers installed within optical power ground wire cables, taking into account different weather conditions. More specifically, we showed that changes caused by wind gusts significantly influence the differential group delay and the principal state of polarization in those optical fibers. For this, we experimentally measured a number of parameters to characterize light polarization properties. Measurements were carried out on C-band operated fiber-optic link formed by 111-km-long power ground wire cables and 88 spectral channels, with a test time step of 1 min during 12 consecutive days. Variations in differential group delay allowed for sensitive testing of environmental changes with measured maxims up to 10 ps under the worst wind conditions. Moreover, measured parameters were used in a numerical model to assess the quality of transmitted high-bit-rate optical signals as a function of wind conditions. The analysis revealed a negligible impact of wind on a 10 Gbps transmission, while substantial influence was noticed for higher bit rates up to 100 Gbps. These results show promises for efficient sensing of environmental changes and subsequent monitoring of the quality of recently used fiber-optic link infrastructures.

Subwavelength engineered metamaterial waveguides and devices are considered as fundamental building blocks for the next generation of integrated photonic circuits. Here we present an overview of recent advances in this surging field.

The Si transparency (1.1 μm – 8 μm wavelength) contains the strongest absorption features of a wide range of chemical and biological substances. However, the use of SOI in the mid-IR is hampered by the large absorption of the buried oxide (BOX) for wavelengths above 4 μm. Silicon membranes have garnered great interest for their unique capability to overcome the BOX limitation while leveraging the advantages of Si photonics. On the other hand, silicon is uniquely poised for the implementation of wideband mid-IR sources based on nonlinear frequency generation. Promising supercontinuum and frequency comb generation have already been demonstrated in Si. Still, current implementations have a limited flexibility in the engineering of phase-matching conditions and dispersion, which complicates the shaping of the nonlinear spectrum. Patterning Si with features smaller than half of the wavelength (well within the capabilities of standard large-volume fabrication processes) has proven to be a simple and powerful tool to implement metamaterials with optimally engineered properties. Here, we present the design of nanostructured silicon membrane waveguides with ultra-wideband flat anomalous dispersion in a wavelength span exceeding 5 µm. Our three-dimensional finite difference time domain (FDTD) calculations predict flat anomalous dispersion near 50 ps/km⋅nm between 2.5 µm and 8 µm wavelength. These results illustrate the potential of subwavelength metamaterial engineering to control chromatic dispersion in Si membrane waveguides. This is a promising step towards the implementation of wideband nonlinear sources in the mid-IR for silicon photonics.

International audience; The strong evolution of silicon photonics towards very low power consumption circuits leads to the development of new strategies for photonic devices, especially for power-hungry components such as optical modulators. One strategy is to use Pockels effect in Si waveguides. However, bulk Si is a centrosymmetric semiconductor, which cannot exhibit any second order optical nonlinearities. Nonetheless, under a strain gradient, generated by depositing a stressed layer on Si waveguides, this restriction vanishes. In our work, we experimentally demonstrated a Pockels effect based electro-optic modulation at high frequency (> 5GHz) using a strained silicon Mach-Zehnder modulator.

Silicon nanophotonics represents a scalable route to deploy complex optical integrated circuits for multifold applications, markets, and end-users. Most recently, applications such as optical communications and interconnects, sensing, as well as quantum-based technologies, among others, present additional opportunities for integrated silicon nanophotonics to expand its frontiers from laboratories to industrial product development. Within a wide set of functionalities that silicon nanophotonic chips can afford, the availability of low-loss optical input/output interfaces has been regarded as a major practical obstacle that hampers long-term success of integrated photonic platforms. Indeed, fiber-chip interfaces based on diffraction gratings are an attractive solution to resonantly couple the light between planar waveguide circuits and standard single-mode optical fibers. Surface grating couplers provide much more alignment tolerance in fiber attach compared with most conventional edge-coupled alternatives, while retaining the much-needed control of the fiber placement on the chip surface and wafer-level-test capability that the in-plane convertors lack. Here, we report on our recent advances in the development of high-performance fiber-chip grating couplers that exploit the blazing effect. This is achieved with well-established dual-etch processing in interleaved teeth-trench arrangements or using L-shaped grating-teeth-profile geometries. The first demonstration of the L-shaped-based grating coupler yielded a coupling loss of -2.7 dB, seamlessly fabricated into a 300-mm foundry manufacturing process using 193-nm deep-ultraviolet stepper lithography. Moreover, silicon metamaterial L-shaped fiber couplers may promote robust sub-decibel coupling of light, reaching a simulated coupling loss of -0.25 dB, while featuring device layouts (>120 nm) compatible with lithographic technologies in silicon semiconductor foundries., SPIE OPTO 2020 - Smart Photonic and Optoelectronic Integrated Circuits XXII, February 3-6, 2020, San Francisco, California, Series: Proceedings of SPIE

We report on the first demonstration of high-speed optical modulation exploiting Pockels effect in strained silicon waveguides. Bandwidths larger than 20 GHz and low insertion loss have been achieved at a wavelength of 1550 nm.

Optical phased arrays (OPAs) are now at the forefront of photonic research as a key beam steering technology for myriad of photonic applications, including in light detection and ranging (LIDAR), communications, and metrology, among others. Integrated OPAs with narrow beam widths and wide-angle steering are in critical need, especially for LIDARs in autonomous vehicle, drone and airplane navigation, or satellites. In this work, we numerically study the performances of OPAs having a circular layout arrangement. Compared to recently available solutions with 1D linear or 2D rectangular arrays, the proposed circular OPAs are poised to deliver effective suppression of the grating sidelobes, while improving beam steering range and obtaining narrower beamwidths. We demonstrate 110-element circular arrays with sidelobe suppression better than 10 dB and an angular beamwidth of 0.5°. Under a monochromatic operation at a 1550 nm wavelength, such array provides a solid angle steering range of 0.21π-sr, with a perspective for performance improvement by using large number of OPA elements and operating under broader spectral range.

Silicon photonics, considered as a major photonic platform for optical communications in data centers, is today also developed for others applications including quantum photonics and sensing. Advanced silicon functionalities based on optical nonlinearities are then required. As the presence of inversion symmetry in the Si crystal structure prevents the exploitation of second-order optical nonlinearities, the generation of strain gradients in Si by a stressed material can be considered. However, due to the semiconductor nature of silicon with the presence of carriers, no clear evidence of second-order nonlinearities have been reported yet. Here we report an experimental demonstration of high-speed Pockels effect in silicon waveguides at 1550 nm. Additionally, a theoretical model is developed to describe its frequency behavior. A second-order nonlinear susceptibility $$\chi _{xxy}^{(2)}$$ χ x x y ( 2 ) of −1.8 ± 0.2 pm V−1 is then experimentally determined. These results pave the way for the development of fast linear electro-optic effect for advanced silicon photonics devices.