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This paper proposes a low-power charge pump PLL (CPPLL) with 1-V supply voltage in 180-nm CMOS technology, which serves as a low-cost clock generator for heterogeneous integration. Tradeoffs between power consumption, jitter performance and limited loop bandwidth in the conventional CPPLL have been analyzed first, followed by the explanations on reference spur issues in wide bandwidth architectures. A novel two-stage ring oscillator with low voltage capability and linear control gain has been proposed and analyzed in detail, which facilitates the implementation of this 1-V design. Fabricated in SMIC 180-nm technology, the designed PLL occupies a die area of 0.177 mm2 with an integrated loop filter. The PLL draws 1.8 mA when working at 480 MHz, and shows a rms jitter of 7.2 pS, which is 20 times more power efficient compared with PLLs with similar frequency and technology node. The design shows potential for heterogeneous integration. [ABSTRACT FROM AUTHOR]

Two-dimensional (2D) sliding ferroelectric materials possess intriguing physical and electronic properties, thereby greatly expanding the family of 2D ferroelectrics (FEs). In this work, using first-principles calculations, we demonstrate a reversible antiferroelectricity–ferroelectricity–antiferroelectricity (AFE–FE–AFE) transition in bilayer δ-SiX (X = S/Se) along the in-plane direction during interlayer sliding. This transition primarily stems from the mechanical sliding of the top layer. Notably, spontaneous polarization (Ps) can reach up to approximately 80 pC m−1 and 70 pC m−1 for bilayers SiS and SiSe, respectively. Furthermore, the mechanism underlying this phase transition involves the interlayer between interaction energy (Einter) and strain energy (Eε). In the case of bilayer SiS, along the ABAFE–AAFE–ABAFE path, critical points arise from the cooperation of strain energy and mechanical sliding force. During the ACAFE–ADFE sliding process, phase transition relies on the combined effect of strain energy and mechanical sliding force. At the ADFE–ACAFE point, the transition is primarily driven by the combined action of interlayer interaction energy and mechanical sliding force. This theoretical work not only establishes a feasible approach for achieving a reversible AFE–FE–AFE phase transition, but also offers valuable insights for the design of novel volatile devices. [ABSTRACT FROM AUTHOR]

In two-dimensional valleytronics, the controllability of anomalous valley Hall effect is the key to its practical application. However, most of the previously proposed control methods are volatile or irreversible. Here, using first principles calculations, we demonstrate that the GdF2/Sc2CO2 multiferroic heterojunction can exhibit nonvolatile switching of its electronic band structures. Interestingly, the polarization switching of the ferroelectric monolayer induces movement in the valley polarization band of GdF2, enabling manipulation of the valley Hall effect. This allows the memory state encoded in the ferroelectric monolayer to be read out via the anomalous valley Hall signal of the heterostructures. The switchable anomalous valley Hall effect can also be achieved by applying biaxial strain in the GdF2/Sc2CO2 multiferroic heterojunction. By harnessing this intriguing anomalous valley Hall effect switching characteristic, we develop a nonvolatile valleytronics memory device. This work provides a way to achieve nonvolatile control in valleytronics and promotes the design of memory devices. [ABSTRACT FROM AUTHOR]

In this paper, a graphene (GR)/monolayer (ML) blue phosphorous (Blue P)/GR selector was studied based on the first-principles theory. Due to different contact edges, four GR–Blue P lateral heterojunctions were constructed, namely, armchair–armchair (A–A), zigzag–armchair (Z–A), armchair–zigzag (A–Z), and zigzag–zigzag (Z–Z). As demonstrated by the binding energy and Mulliken population, we found that the Z–Z heterojunction was relatively stable. Furthermore, a GR/Blue P/GR selector based on the Z–Z heterojunction interface was proposed with a nonlinear (NL) coefficient is 105. However, the drive current of this device was insufficient. A P atom of the resistive layer was separately substituted with four different atoms (Ni, Cu, N, and Cl) to effectively improve selector performance. The energy band structure was half-metallic when doped with Ni or Cu while the others still maintained semiconductor characteristics, and the bandgap was significantly reduced. The Schottky barrier height and width of the interface (GR–Blue P), with Cl as the substituted impurity, were the smallest, leading to a three order of magnitude increase in the NL coefficient. The calculation shows that GR/Blue P/GR devices can be integrated as selectors in Resistive switching Random Access Memory (RRAM) arrays. This work also has a certain guiding significance for manufacturing new types of two-dimensional lateral selector apparatuses. [ABSTRACT FROM AUTHOR]

In this article, we analyzed the experimental data based on the TaOx memristor and found that the threshold switching (TS) characteristics are related to temperature, and its logarithmic I–V curve is in good agreement with the space charge limiting current conduction mechanism. We use this mechanism to establish a TS physical model and then use the physical model to build an LTspice model. The model data are fitted with the experimental data, which is basically consistent. Next, using the TS memristor to simulate a leaky integrate-and-fire neuron circuit, the basic dynamics are realized. By changing the external temperature of the memristor, the output frequency of the neuron will be more intense as the temperature increases. Finally, an artificial spiking neural network (SNN) was built based on this neuron circuit for MNIST recognition task. In this SNN, the input signals fused both voltage amplitude and temperature to achieve neuromorphic multimodal preprocessing and enhance the recognition accuracy. These results demonstrated the reliability of the model, which enhanced the flexibility for exploring the application of TaOx-based TS memristors. [ABSTRACT FROM AUTHOR]

Nowadays, two-dimensional (2D) materials with Janus structures evoke much attention due to their unique mechanical and electronic properties. In this work, Janus Pma2-Si2XY (X/Y = S/Se/Te, X ≠ Y) ferroelectric monolayers are firstly proposed and systematically investigated by first-principles calculations. These monolayers exhibit remarkable mechanical properties, including small Young's modulus values, negative Poisson's ratios (NPRs) and large critical strains, reflecting their exceptional flexibility and stretchability. More strikingly, the novel structures of Si2STe and Si2SeTe also endow them with in-plane spontaneous polarization (Ps) and low energy barrier for phase transition, with Ps and energy barrier values being 1.632 × 10−10 C m−1 and 159 meV for Si2STe and 1.149 × 10−10 C m−1 and 196.6 meV for Si2SeTe. The ab initio molecular dynamics (AIMD) simulations reveal high Curie temperatures (Tc) for Si2STe and Si2SeTe, ranging between 1300 K and 1400 K. Additionally, Si2XY monolayers exhibit high anisotropic carrier mobility (∼103 cm2 V−1 s−1) and an extraordinary light absorption coefficient (∼105 cm−1). Our research not only broadens the family of 2D Janus ferroelectric materials, but also demonstrates their potential applications in nanomechanical, nanoelectronic and optoelectronic devices. [ABSTRACT FROM AUTHOR]

After investigating the behavior of ions during the growth of conductive filaments, we suggested a model for the growth process and electrical characteristics of the conductive filament under current-driven mode. In this model, the ionic displacement equation is derived by Arrhenius law, and a differential equation for the conductive filament growth has been established. We have also proved that the dielectric layer with the leakage current under current-driven mode can be equivalent to a parallel plate capacitor, which has a the equivalent dielectric constant. Consequently, the forming/set time of the device is gotten. At the same time, the kinetics process of ion motion is analyzed in detail, so that many microscopic parameters of the ion motion, such as the height of the potential barrier, the jump step, mobility and diffusion coefficient, can be obtained. Due to divalent and monovalent copper ions all participate in conduction, an equivalent copper ion Cuz+ is used for replacing both Cu+ and Cu2+, solving the computational complexity problem caused by multivalent metal ions. Finally, an equivalent circuit is proposed to calculate output voltage versus time characteristic. The calculation results of the model are consistent with experimental data. [ABSTRACT FROM AUTHOR]

Oxide-based memristors by incorporating thermally enhanced layer (TEL) have showed great potential in electronic devices for high-efficient and high-density neuromorphic computing owing to the improvement of multilevel resistive switching. However, research on the mechanism of resistive switching regulation is still lacking. In this work, based on the method of finite element numerical simulation analysis, a bilayer oxide-based memristor Pt/HfO2 (5 nm)/Ta2O5 (5 nm)/Pt with the Ta2O5 TEL was proposed. The oxygen vacancy concentrates distribution shows that the fracture of conductive filaments (CF) is at the interface where the local temperature is the highest during the reset process. The multilevel resistive switching properties were also obtained by applying different stop voltages. The fracture gap of CF can be enlarged with the increase of the stopping voltage, which is attributed to the heat-gathering ability of the TEL. Moreover, it was found that the fracture position of oxygen CF is dependent on the thickness of TEL, which exhibits a modulation of device RS performance. These results provide a theoretical guidance on the suitability of memristor devices for use in high-density memory and brain-actuated computer systems. [ABSTRACT FROM AUTHOR]

Ge2Sb2Te5 (GST) alloy has the ability to quickly transform between the amorphous phase and the crystalline phase; therefore, it can be used in non-volatile phase change storage. First-principles molecular dynamics was used to simulate the reversible phase change process of GST alloy, namely, amorphization and crystallization. The amorphous state was obtained by melting (∼3000 K) and cooling, and the amorphization process was characterized by the pair correlation function and bond angle distribution. The bond angles of amorphous GST were mainly distributed around 60°, 90°, and 110°, indicating the existence of octahedral and tetrahedral bonding configurations. The crystalline state was obtained by annealing at a temperature of 600 K, and the crystallization process was characterized by the pair correlation function, component disordered number, bond angle distribution, and dynamic atomic structure change. The results show that the bond angle of GST in crystallization is mainly distributed around 90°, and the structure mainly contains four-membered rings formed by Ge–Te and Sb–Te. By analyzing the optical properties, with the growth of crystallization time, the absorption coefficient, reflectivity, and conductivity of GST were significantly improved. [ABSTRACT FROM AUTHOR]

In this work, Ti3C2/single-layer black phosphorus (BP)/Ti3C2 resistive random access memory (RRAM) was studied based on the first-principles theory. First, after determining the size of the material, the Ti3C2/BP(100) interface was built. By studying the electrostatic potential of the interface, it was found that there was a Schottky barrier at the interface, and the barrier height was obtained by calculating the work function and the band structure of the interface. Next, a Ti3C2/BP(100)/Ti3C2 RRAM device was designed based on the mechanism of the Schottky barrier at the interface. The bipolar switching characteristics were confirmed after calculating the I–V curve of the device, in which the turn-on threshold voltage is about 1.5 V, the turn-off threshold voltage is about 0.5 V, and the switch ratio is greater than 105. However, there are still shortcomings such as insufficient drive current. So, in the end, the optimization program is determined through a series of studies of device doping and vacancy, and it is found that after a certain concentration of Mg atoms are adsorbed, the conductivity of the resistive switching layer can be increased, the interface barrier can be adjusted, and the device performance such as the turn-on voltage, drive current, and switching ratio can be improved. This work may have guiding significance and value for the experimental research of manufacturing a new two-dimensional material RRAM. [ABSTRACT FROM AUTHOR]