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2. Nanoscale structural and electrical properties of graphene grown on AlGaN by catalyst-free chemical vapor deposition

Author

Giannazzo, F., Dagher, R., Schilirò, E., Panasci, S. E., Greco, G., Nicotra, G., Roccaforte, F., Agnello, S., Brault, J., Cordier, Y., and Michon, A.

Subjects
Condensed Matter - Materials Science
Abstract

The integration of graphene (Gr) with nitride semiconductors is highly interesting for applications in high-power/high-frequency electronics and optoelectronics. In this work, we demonstrated the direct growth of Gr on Al0.5Ga0.5N/sapphire templates by propane (C3H8) chemical vapor deposition (CVD) at temperature of 1350{\deg}C. After optimization of the C3H8 flow rate, a uniform and conformal Gr coverage was achieved, which proved beneficial to prevent degradation of AlGaN morphology. X-ray photoemission spectroscopy (XPS) revealed Ga loss and partial oxidation of Al in the near-surface AlGaN region. Such chemical modification of a 2 nm thick AlGaN surface region was confirmed by cross-sectional scanning transmission electron microscopy (STEM) combined with electron energy loss spectroscopy (EELS), which also showed the presence of a bilayer of Gr with partial sp2/sp3 hybridization. Raman spectra indicated that the deposited Gr is nanocrystalline (with domain size 7 nm) and compressively strained. A Gr sheet resistance of 15.8 kOhm/sq was evaluated by four-point-probe measurements, consistently with the nanocrystalline nature of these films. Furthermore, nanoscale resolution current mapping by conductive atomic force microscopy (C-AFM) indicated local variations of the Gr carrier density at a mesoscopic scale, which can be ascribed to changes in the charge transfer from the substrate due to local oxidation of AlGaN or to the presence of Gr wrinkles., Comment: 20 pages, 8 figures

Published
2020
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3. Al$_{5+\alpha}$Si$_{5+\delta}$N$_{12}$, a new Nitride compound

Author

Dagher, R., Lymperakis, L., Delaye, V., Largeau, L., Michon, A., Brault, J, and Vennegues, P.

Subjects
Condensed Matter - Materials Science
Abstract

We report on the synthesis of new nitride-based compound by using annealing of AlN heteroepitaxial layers under a Si-atmosphere at temperatures between 1350$^\circ$C and 1550$^\circ$C. The structure and stoichiometry of this compound are investigated by high-resolution scanning transmission electron microscopy (HRSTEM), energy dispersive X-Ray (EDX) spectroscopy, and density functional theory (DFT) calculations. The identified structure is a derivative of the parent wurtzite AlN crystal where anion sublattice is fully occupied by N atoms and the cation sublattice is the stacking of 2 different planes along <0001>. The first one exhibits a $\times$3 periodicity along <10-10> with 1/3 of the sites being vacant. The rest of the sites in the cation sublattice are occupied by equal number of Si and Al atoms. Assuming a semiconducting alloy, which is expected to have a wide band gap, a range of stoichiometries is proposed, Al$_{5+\alpha}$Si$_{5+\delta}$N$_{12}$, with $\alpha$ being between 0 and 1/3 and $\delta$ between 0 and 1/4.

Published
2019

11. Proteomic profiling of serum identifies a molecular signature that correlates with clinical outcomes in COPD

Author

Singanayagam, A, Dagher, R, Fogel, P, Wang, J, Soussan, D, Chiang, C-C, Kearley, J, Muthas, D, Taille, C, Berger, P, Bourdin, A, Chenivesse, C, Leroy, S, Anderson, G, Humbles, AA, Aubier, M, Kolbeck, R, Pretolani, M, Singanayagam, A, Dagher, R, Fogel, P, Wang, J, Soussan, D, Chiang, C-C, Kearley, J, Muthas, D, Taille, C, Berger, P, Bourdin, A, Chenivesse, C, Leroy, S, Anderson, G, Humbles, AA, Aubier, M, Kolbeck, R, and Pretolani, M

Abstract

OBJECTIVE: Novel biomarkers related to main clinical hallmarks of Chronic obstructive pulmonary disease (COPD), a heterogeneous disorder with pulmonary and extra-pulmonary manifestations, were investigated by profiling the serum levels of 1305 proteins using Slow Off-rate Modified Aptamers (SOMA)scan technology. METHODS: Serum samples were collected from 241 COPD subjects in the multicenter French Cohort of Bronchial obstruction and Asthma to measure the expression of 1305 proteins using SOMAscan proteomic platform. Clustering of the proteomics was applied to identify disease subtypes and their functional annotation and association with key clinical parameters were examined. Cluster findings were revalidated during a follow-up visit, and compared to those obtained in a group of 47 COPD patients included in the Melbourne Longitudinal COPD Cohort. RESULTS: Unsupervised clustering identified two clusters within COPD subjects at inclusion. Cluster 1 showed elevated levels of factors contributing to tissue injury, whereas Cluster 2 had higher expression of proteins associated with enhanced immunity and host defense, cell fate, remodeling and repair and altered metabolism/mitochondrial functions. Patients in Cluster 2 had a lower incidence of exacerbations, unscheduled medical visits and prevalence of emphysema and diabetes. These protein expression patterns were conserved during a follow-up second visit, and substanciated, by a large part, in a limited series of COPD patients. Further analyses identified a signature of 15 proteins that accurately differentiated the two COPD clusters at the 2 visits. CONCLUSIONS: This study provides insights into COPD heterogeneity and suggests that overexpression of factors involved in lung immunity/host defense, cell fate/repair/ remodelling and mitochondrial/metabolic activities contribute to better clinical outcomes. Hence, high throughput proteomic assay offers a powerful tool for identifying COPD endotypes and facilitating targeted

Published
2022

12. The Impact of La Substitution on the Structural, Molecular, Morphological, and Thermal Properties of Mn0.6Zn0.4Fe2O4.

Author

Mostafa, M., Khalaf, A., El-Maghraby, E. M., Dagher, R. A., and Hemeda, O. M.

Subjects
THERMAL properties, X-ray diffraction, MAGNETIC ions, MAGNETIC permeability, TRANSMISSION electron microscopy
Abstract

The current work involves the use of flash auto combustion procedure to synthesize nano-ferrites Mn0.6Zn0.4LaxFe2-xO4, (x = 0.00, 0.02, 0.04, 0.06, 0.08, and 0.10) annealing at 500 °C for 4 h. X-ray Diffraction (XRD), Fourier transition infrared spectroscopy (FTIR), and high-resolution transmission electron microscopy (HRTEM) were used to characterize the structural properties of produced samples. Scanning electron microscopy (SEM) was utilized to examine the surface morphology of the samples at various Lanthanum concentrations. From XRD, the spinel cubic structure for all samples with few traces of secondary phase at high La concentrations is assured. The crystallite size is estimated to be in the nanoscale range of 13.16–18.13 nm using the Debye–Scherrer formula. The appearance of characteristic vibrational bands near 460 cm−1 and 563 cm−1, which correspond to the octahedral and tetrahedral sites, respectively, confirms the formation of the spinel structure. SEM micrographs show that the grains are nearly irregular in shape, and the accumulation of La+3 ions at the grain boundaries exerts tensile strength and pressure on the grain itself, reducing the grain size. The particle size estimated by TEM coincides well with the crystallite size determined by XRD. The thermogravimetric analysis, (TGA), was used to investigate the thermal properties of the nanoferrites from room temperature to 1000 °C. In comparison to the other samples, the sample with x = 0.04 has greater thermal stability and the TEM measurement indicates that this sample has the smallest particle size. Therefore, we can assert that the thermal stability improves as the particle size decreases. The magnetic permeability was measured in the temperature range 303–773 K at a fixed frequency of 10 kHz and at various La contents. The sample with x = 0.04 has a minimal permeability value, showing that the separation brought on by La ions has diminished the super exchange contact between magnetic ions. [ABSTRACT FROM AUTHOR]

Published
2023
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13. The J domain of sacsin disrupts intermediate filament assembly

Author

Young Jc, Bernard B, Benoit J. Gentil, Dicaire M, Sandra Minotti, Dabbaghizadeh A, Dagher R, Cheng-Boivin Z, Heather D. Durham, and Paré A

Subjects
Neurofilament, biology, Chemistry, biology.protein, Regulator, Vimentin, Intermediate filament, Homeostasis, In vitro, Loss function, Hsp70, Cell biology
Abstract

Autosomal Recessive Spastic Ataxia of the Charlevoix Saguenay (ARSACS), is caused by loss of function mutations in the SACS gene, which encodes sacsin, a giant protein of 520 kDa. A key feature of the absence of sacsin in cells is the formation of abnormal bundles of intermediate filaments (IF) including neurofilaments (NF) in neurons and vimentin IF in fibroblasts, suggesting a role of sacsin in IF homeostasis. Sacsin contains a J domain (SacsJ) homologous to Hsp40, that can interact with Hsp70 chaperones. The SacsJ domain resolved NF bundles in cultured Sacs-/- neurons, however, its mechanism is still unclear. Here, we focused on the role of SacsJ in NF assembly. We report that the SacsJ domain directly interacts with NF proteins in vitro to disassemble NFL filaments, and to inhibit their initial assembly, in the absence of Hsp70. We generated a cell-penetrating peptide derived from this domain, SacsJ-myc-TAT, which was efficient in disassembling both vimentin IF and NF in cultured fibroblasts and Sacs+/+ motor neurons as well as NF bundles in cultured Sacs-/- motor neurons. Whereas a normal NF network was restored in Sacs-/- neurons treated with the SacsJ peptide, there was some loss of IF networks in Sacs+/+ fibroblasts or neurons. These results suggest that SacsJ is a key regulator of NF and IF networks in cells, with implications for its therapeutic use.

Published
2021

17. Proteomic Profiling Reveals Heterogeneity of Chronic Obstructive Pulmonary Disease with Differential Anti-Microbial, Pro-Survival and Lung Regeneration Activities

Author

Wang, J., primary, Dagher, R., additional, Kearley, J., additional, Barakat, W., additional, Soussan, D., additional, Poirier, I., additional, Chiang, C.-C., additional, Connor, J., additional, Muthas, D., additional, Taillé, C., additional, Berger, P., additional, Bourdin, A., additional, Chenivesse, C., additional, Leroy, S., additional, Humbles, A., additional, Anderson, G.P., additional, Aubier, M., additional, Kolbeck, R., additional, and Pretolani, M., additional

Published
2020
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18. Evaluation of the Role of Hedgehog Interacting Protein (HHIP) and the Sonic Hedgehog Pathway to Enhance Respiratory Repair and Function in Chronic Obstructive Pulmonary Disease (COPD)

Author

Hanna, R.N., primary, Zerrouki, K., additional, Xiong, X., additional, Sanders, P., additional, Yang, M.Y., additional, Eldridge, L., additional, Dagher, R., additional, Migneault, A., additional, Berlin, A., additional, Kumar, V., additional, Wang, J., additional, Gubbins, E., additional, Cottage, T., additional, Gonzalez, A., additional, Kearley, J., additional, Finch, D., additional, Ghaedi, M., additional, and Connor, J.R., additional

Published
2020
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20. Al 5+α Si 5+δ N 12 , a new Nitride compound

Author

Dagher, R., Lymperakis, L., Delaye, V., Largeau, L., Michon, A., Brault, J, Vennegues, P., Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA), Université Nice Sophia Antipolis (... - 2019) (UNS), COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-COMUE Université Côte d'Azur (2015-2019) (COMUE UCA)-Centre National de la Recherche Scientifique (CNRS)-Université Côte d'Azur (UCA), Max-Planck-Institut für Eisenforschung GmbH, Max-Planck-Gesellschaft, Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), and Université Nice Sophia Antipolis (1965 - 2019) (UNS)

Subjects
[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]
Abstract

We report on the synthesis of new nitride-based compound by using annealing of AlN heteroepitaxial layers under a Si-atmosphere at temperatures between 1350°C and 1550°C. The structure and stoichiometry of this compound are investigated by high-resolution scanning transmission electron microscopy (HRSTEM), energy dispersive X-Ray (EDX) spectroscopy, and density functional theory (DFT) calculations. The identified structure is a derivative of the parent wurtzite AlN crystal where anion sublattice is fully occupied by N atoms and the cation sublattice is the stacking of 2 different planes along . The first one exhibits a ×3 periodicity along with 1/3 of the sites being vacant. The rest of the sites in the cation sublattice are occupied by equal number of Si and Al atoms. Assuming a semiconducting alloy, which is expected to have a wide band gap, a range of stoichiometries is proposed, Al5+αSi5+δN12 with α being between 0 and 1/3 and δ between 0 and 1/4.

Published
2019

25. Baseline brain function in the preadolescents of the ABCD Study

Author

Chaarani, B., Hahn, S., Allgaier, N., Adise, S., Owens, M. M., Juliano, A. C., Yuan, D. K., Loso, H., Ivanciu, A., Albaugh, M. D., Dumas, J., Mackey, S., Laurent, J., Ivanova, M., Hagler, D. J., Cornejo, M. D., Hatton, S., Agrawal, A., Aguinaldo, L., Ahonen, L., Aklin, W., Anokhin, A. P., Arroyo, J., Avenevoli, S., Babcock, D., Bagot, K., Baker, F. C., Banich, M. T., Barch, D. M., Bartsch, H., Baskin-Sommers, A., Bjork, J. M., Blachman-Demner, D., Bloch, M., Bogdan, R., Bookheimer, S. Y., Breslin, F., Brown, S., Calabro, F. J., Calhoun, V., Casey, B. J., Chang, L., Clark, D. B., Cloak, C., Constable, R. T., Constable, K., Corley, R., Cottler, L. B., Coxe, S., Dagher, R. K., Dale, A. M., Dapretto, M., Delcarmen-Wiggins, R., Dick, A. S., Do, E. K., Dosenbach, N. U. F., Dowling, G. J., Edwards, S., Ernst, T. M., Fair, D. A., Fan, C. C., Feczko, E., Feldstein-Ewing, S. W., Florsheim, P., Foxe, J. J., Freedman, E. G., Friedman, N. P., Friedman-Hill, S., Fuemmeler, B. F., Galvan, A., Gee, D. G., Giedd, J., Glantz, M., Glaser, P., Godino, J., Gonzalez, M., Gonzalez, R., Grant, S., Gray, K. M., Haist, F., Harms, M. P., Hawes, S., Heath, A. C., Heeringa, S., Heitzeg, M. M., Hermosillo, R., Herting, M. M., Hettema, J. M., Hewitt, J. K., Heyser, C., Hoffman, E., Howlett, K., Huber, R. S., Huestis, M. A., Hyde, L. W., Iacono, W. G., Infante, M. A., Irfanoglu, O., Isaiah, A., Iyengar, S., Jacobus, J., James, R., Jean-Francois, B., Jernigan, T., Karcher, N. R., Kaufman, A., Kelley, B., Kit, B., Ksinan, A., Kuperman, J., Laird, A. R., Larson, C., LeBlanc, K., Lessov-Schlagger, C., Lever, N., Lewis, D. A., Lisdahl, K., Little, A. R., Lopez, M., Luciana, M., Luna, B., Madden, P. A., Maes, H. H., Makowski, C., Marshall, A. T., Mason, M. J., Matochik, J., McCandliss, B. D., McGlade, E., Montoya, I., Morgan, G., Morris, A., Mulford, C., Murray, P., Nagel, B. J., Neale, M. C., Neigh, G., Nencka, A., Noronha, A., Nixon, S. J., Palmer, C. E., Pariyadath, V., Paulus, M. P., Pelham, W. E., Pfefferbaum, D., Pierpaoli, C., Prescot, A., Prouty, D., Puttler, L. I., Rajapaske, N., Rapuano, K. M., Reeves, G., Renshaw, P. F., Riedel, M. C., Rojas, P., de la Rosa, M., Rosenberg, M. D., Ross, M. J., Sanchez, M., Schirda, C., Schloesser, D., Schulenberg, J., Sher, K. J., Sheth, C., Shilling, P. D., Simmons, W. K., Sowell, E. R., Speer, N., Spittel, M., Squeglia, L. M., Sripada, C., Steinberg, J., Striley, C., Sutherland, M. T., Tanabe, J., Tapert, S. F., Thompson, W., Tomko, R. L., Uban, K. A., Vrieze, S., Wade, N. E., Watts, R., Weiss, S., Wiens, B. A., Williams, O. D., Wilbur, A., Wing, D., Wolff-Hughes, D., Yang, R., Yurgelun-Todd, D. A., Zucker, R. A., Potter, A., and Garavan, H. P.

Abstract

The Adolescent Brain Cognitive Development (ABCD) Study®is a 10-year longitudinal study of children recruited at ages 9 and 10. A battery of neuroimaging tasks are administered biennially to track neurodevelopment and identify individual differences in brain function. This study reports activation patterns from functional MRI (fMRI) tasks completed at baseline, which were designed to measure cognitive impulse control with a stop signal task (SST; N= 5,547), reward anticipation and receipt with a monetary incentive delay (MID) task (N= 6,657) and working memory and emotion reactivity with an emotional N-back (EN-back) task (N= 6,009). Further, we report the spatial reproducibility of activation patterns by assessing between-group vertex/voxelwise correlations of blood oxygen level-dependent (BOLD) activation. Analyses reveal robust brain activations that are consistent with the published literature, vary across fMRI tasks/contrasts and slightly correlate with individual behavioral performance on the tasks. These results establish the preadolescent brain function baseline, guide interpretation of cross-sectional analyses and will enable the investigation of longitudinal changes during adolescent development.

Published
2021
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26. Nanoscale structural and electrical properties of graphene grown on AlGaN by catalyst-free chemical vapor deposition.

Author

Giannazzo, F, Dagher, R, Schilirň, E, Panasci, S E, Greco, G, Nicotra, G, Roccaforte, F, Agnello, S, Brault, J, Cordier, Y, and Michon, A

Subjects
*ELECTRON energy loss spectroscopy, *CHEMICAL vapor deposition, *SCANNING transmission electron microscopy, *WRINKLE patterns, *MOLECULAR beam epitaxy, *PHOTOELECTRON spectroscopy, *ATOMIC force microscopy, *RAMAN spectroscopy
Abstract

The integration of graphene (Gr) with nitride semiconductors is highly interesting for applications in high-power/high-frequency electronics and optoelectronics. In this work, we demonstrated the direct growth of Gr on Al0.5Ga0.5N/sapphire templates by propane (C3H8) chemical vapor deposition at a temperature of 1350 °C. After optimization of the C3H8 flow rate, a uniform and conformal Gr coverage was achieved, which proved beneficial to prevent degradation of AlGaN morphology. X-ray photoemission spectroscopy revealed Ga loss and partial oxidation of Al in the near-surface AlGaN region. Such chemical modification of a ∼2 nm thick AlGaN surface region was confirmed by cross-sectional scanning transmission electron microscopy combined with electron energy loss spectroscopy, which also showed the presence of a bilayer of Gr with partial sp2/sp3 hybridization. Raman spectra indicated that the deposited Gr is nanocrystalline (with domain size ∼7 nm) and compressively strained. A Gr sheet resistance of ∼15.8 kΩ sq−1 was evaluated by four-point-probe measurements, consistently with the nanocrystalline nature of these films. Furthermore, nanoscale resolution current mapping by conductive atomic force microscopy indicated local variations of the Gr carrier density at a mesoscopic scale, which can be ascribed to changes in the charge transfer from the substrate due to local oxidation of AlGaN or to the presence of Gr wrinkles. [ABSTRACT FROM AUTHOR]

Published
2021
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27. High temperature annealing and CVD growth of few-layer graphene on bulk AlN and AlN templates

Author

Dagher, R., Matta, S., PARRET, Romain, PAILLET, Matthieu, JOUAULT, Benoit, Nguyen, L., Portail, M., Zielinski, M., Chassagne, T., Tanaka, S., Brault, J., Cordier, Y., Michon, A., Laboratoire Charles Coulomb (L2C), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), and Department of Applied Quantum Physics and Nuclear Engineering

Subjects
atomic force microscopy, growth, graphene, Raman spectroscopy, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], annealing, X-ray photoemission spectroscopy, AlN, [PHYS.COND.CM-MSQHE]Physics [physics]/Condensed Matter [cond-mat]/Mesoscopic Systems and Quantum Hall Effect [cond-mat.mes-hall], chemical vapor deposition
Abstract

Graphene and AlN are promising materials, interesting to combine together. In this study, we will present first results for direct growth of graphene on bulk AlN and on AlN templates using chemical vapor deposition, including the annealing of these substrates at high temperatures. Atomic force microscopy (AFM) enabled us to study the evolution of the AlN surface morphology after annealing and growth. Few-layer graphene deposition is demonstrated on the basis of X-ray photoemission and Raman spectroscopy

Published
2017

32. Radiation Exposure and Cancer Incidence (1990 to 2008) around Nuclear Power Plants in Ontario, Canada

Author

P. A. Thompson J. Burtt and E. Dagher R. Lane

Subjects
education.field_of_study, Radionuclide, Childhood leukemia, business.industry, Incidence (epidemiology), Population, Cancer, medicine.disease, Radiation exposure, Cancer incidence, medicine, Forensic engineering, business, education, Ontario canada, Demography
Abstract

Radiation doses and cancer incidence among the population living within 25 km of three nuclear power plants (NPPs) in Ontario, Canada were investigated for the period 1985 to 2008 for radiation exposure and 1990 to 2008 for cancer incidence. This study design provided at least a five-year latency period between potential radiation exposure and cancer incidence. Around the NPPs, the incidence of childhood cancers, leukemia and non-Hodgkin lymphoma, in young children (aged 0 - 4) was lower than the general Ontario population, but not statistically so. Cancer incidence in children aged 0 - 14 was similar to the Ontario population. Overall, for all ages there was no consistent pattern of cancer incidence (all cancers combined and radio-sensitive cancers) across the population living within 25 km of the three NPPs. Some types of cancers were statistically higher than expected, others were statistically lower than expected, and others were similar to the general Ontario population. Although variations in all cancers combined and radiosensitive cancers were found in this study, the pattern was found to be within the natural variation of cancer in Ontario. During the period 1985 to 2000 (Pickering and Bruce NPPs) and 1985 to 2002 (Darlington NPP) radiation doses to members of the public from the operation of the NPPs, estimated on the basis of a hypothetical individual at the facility fence line, were ≤0.052 mSv/year; while for the period 2001 to 2008 (Pickering and Bruce NPPs) and 2003 to 2008 (Darlington NPP) radiation doses, more realistically estimated using the critical group concept for six age classes, were ≤0.0067 mSv/year. Hence, public doses from environmental releases of radionuclides from Ontario NPPs represent a very small fraction of natural background radiation (1.338 and 2.02 mSv/year) in the regions where the NPPs are located. Our study shows no evidence of childhood leukemia clusters around the three NPPs and that the incidence of all the cancers investigated for all age groups is within the natural variation of the disease in Ontario. The radiation exposure from NPP operation is a small contributor to the public’s total exposure to radiation and is not a plausible explanation for any excess cancers observed within 25 km of any Ontario NPP.

Published
2013

33. Graphene integration with nitride semiconductors for high power and high frequency electronics

Author

Giannazzo, F., Fisichella, G., Greco, G., La Magna, A., Roccaforte, F., Pecz, B., Yakimova, Rositsa, Dagher, R., Michon, A., Cordier, Y., Giannazzo, F., Fisichella, G., Greco, G., La Magna, A., Roccaforte, F., Pecz, B., Yakimova, Rositsa, Dagher, R., Michon, A., and Cordier, Y.

Abstract

Group III nitride semiconductors (III-N), including GaN, AlN, InN, and their alloys, are currently the materials of choice for many applications in optoelectronics (light-emitting diodes, laser diodes), and high-power and high-frequency transistors. Due to its attractive electrical, optical, mechanical, and thermal properties, graphene (Gr) integration with III-N technology has been considered in the last few years, in order to address some of the major issues which still limit the performances of GaN-based devices. To date, most of the studies have been focused on the use of Gr as transparent conductive electrode (TCE) to improve current spreading from top electrodes and light extraction in GaN-LEDs. This paper will review recent works evaluating the benefits of Gr integration with III-N for high power and high frequency electronics. From the materials side, recent progresses in the growth of high quality GaN layers on Gr templates and in the deposition of Gr on III-N substrates and templates will be presented. From the applications side, strategies to use Gr for thermal management in high-power AlGaN/GaN transistors will be discussed. Finally, recent proposals of implementing new ultra-high-frequency (THz) transistors, such as the Gr base hot electron transistor (GBHET), by Gr integration with III-N will be highlighted. (C) 2016 WILEY-VCH Verlag GmbH amp; Co. KGaA, Weinheim, Funding Agencies|FLAGERA project "GraNitE: Graphene heterostructures with Nitrides for high frequency Electronics"; FLAGERA project "GRIFONE: Graphitic films of group III nitrides and group II oxides: platform for fundamental studies and applications"

Published
2017
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39. Efficacy of a novel, locally delivered TrkA inhibitor in preclinical models of OA and joint pain

Author

Flannery, C.R., primary, Moran, N., additional, Blasioli, D., additional, Donahue, K., additional, Kane, J., additional, Gladysheva, T., additional, Dagher, R., additional, Fang, R., additional, Vardanyan, A., additional, Bangari, D., additional, Ho, C., additional, Bourque, A., additional, Santos, M., additional, Philbrook, M., additional, and Matthews, G.L., additional

Published
2015
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41. [Calcium binding proteins as therapeutic targets ?]

Author

Dagher, R., Pigault, C., Kilhoffer, M.C., Villa, P., Haiech., J., Institut Gilbert-Laustriat : Biomolécules, Biotechnologie, Innovation Thérapeutique, and Université Louis Pasteur - Strasbourg I-Centre National de la Recherche Scientifique (CNRS)

Subjects
[CHIM.ORGA]Chemical Sciences/Organic chemistry
Published
2006

44. PReS-FINAL-2103: Real life management of VZV infection or reactivation in rheumatic children on biologics: the French experience

Author

Guillaume-Czitrom, S, primary, Remy-Piccolo, V, additional, Duquesne, A, additional, Kone-Paut, I, additional, Grall, M, additional, Allain-Launay, E, additional, Dagher, R, additional, Faye, A, additional, Brochard, K, additional, Grouteau, E, additional, Pietrement, C, additional, Rossi, L, additional, Quartier, P, additional, and Morel, J, additional

Published
2013
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