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Your search keyword '"Dabiran, Amir"' showing total 138 results
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138 results on '"Dabiran, Amir"'

1. UV hybrid photon detector based on GaN photocathodes and Si low gain avalanche diode

Author

Boukhicha, Mohamed, Tsang, Thomas Y., Giacomini, Gabriele, Dabiran, Amir M., and Cultrera, Luca

Subjects
Physics - Instrumentation and Detectors, Condensed Matter - Materials Science, Physics - Applied Physics
Abstract

Photon detectors featuring single-photon sensitivity play a crucial role in various scientific domains, including high-energy physics, astronomy, and quantum optics. Fast response time, high quantum efficiency, and minimal dark counts are the characteristics that render them ideal candidates for detecting individual photons with exceptional signal-to-noise ratios, at frequencies in the the range of hundreds of MHz. Here, we report on our first design and operational results on a Hybrid Photon Detector (HPD) that combines the high quantum efficiency of a Gallium Nitride (GaN) photocathode and the low noise characteristics of a Si-based Low-Gain Avalanche Diode (LGAD). This hybrid detection scheme has the potential to reach single-photon detection sensitivity with high quantum efficiency, low noise levels and capable of operating at hundreds of MHz repetition rates.

Published
2024

2. Scaling and High-Frequency Performance of AlN/GaN HEMTs

Author

Luo, Xi, Halder, Subrata, Curtice, Walter R., Hwang, James C. M., Chabak, Kelson D., Walker, Jr., Dennis E., and Dabiran, Amir M.

Subjects
Condensed Matter - Mesoscale and Nanoscale Physics, Physics - Applied Physics
Abstract

Small- and large-signal RF characteristics were measured on AlN GaN HEMTs with 80-160 nm gate length and 100-300 {\mu}m width. Consistent with the literature, current-gain cut-off frequency and maximum frequency of oscillation were found to increase with inverse gate length and independent of gate width. For the first time, output power and efficiency were reported at the high end of Xband, and were comparable to the best reported at 2 GHz and insensitive to gate length or width. These results suggest that the AlN/GaN HEMTs can be further scaled for even higher frequency and higher power performance.

Published
2017
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13. GaN-Based Devices for Reliable Operation at Very High Temperatures

Author

Dabiran, Amir M., primary, Osinsky, Andrei V., additional, Peter, Peter P., additional, Fitch, Robert C., additional, Moser, Neil, additional, Crespo, A, additional, Anderson, T J., additional, Ren, F., additional, Khanna, Rohit, additional, Stafford, L., additional, and Pearton, Steve J., additional

Published
2019
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16. Wireless Hydrogen Sensor Networks Using AlGaN/GaN High Electron Mobility Transistor Based Differential Diodes Sensor

Author

Yu, X, primary, Li, C, additional, Low, Z, additional, Lin, J, additional, Anderson, T J., additional, Wang, H T., additional, Ren, F., additional, Wang, Y L., additional, Chang, C Y., additional, Pearton, Stephen J., additional, Hsu, Chien-Hsing, additional, Osinsky, A, additional, Dabiran, Amir M., additional, Chow, P, additional, Balaban, C, additional, and Painter, J, additional

Published
2019
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21. Thermal emittance and response time measurements of a GaN photocathode.

Author

Bazarov, Ivan V., Dunham, Bruce M., Liu, Xianghong, Virgo, Matt, Dabiran, Amir M., Hannon, Fay, and Sayed, Hisham

Subjects
PHOTOCATHODES, GALLIUM nitride, ULTRASHORT laser pulses, SOLENOIDS, ELECTRONS
Abstract

We present the measurements of thermal emittance and response time for a GaN photocathode illuminated with 5 ps pulses at 260 nm wavelength. The thermal emittance was measured downstream of a 100 kV dc gun using a solenoid scan with a wire scanner and a beam viewscreen and was found to be 1.35±0.11 mm mrad normalized rms emittance per 1 mm rms of illuminated spot size. The response time of the photoemitted electrons was evaluated using a deflecting mode rf cavity synchronized to the laser pulses and was found to be prompt within the time resolution capability of our setup. [ABSTRACT FROM AUTHOR]

Published
2009
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22. TiAlNiAu contacts for ultrathin AlN/GaN high electron mobility transistor structures

Author

Lin Zhou, Pearton, S.J., Ren, F., Dabiran, Amir, Smith, David J., and Chang, C.Y.

Subjects
Titanium compounds -- Electric properties, Nickel compounds -- Electric properties, Aluminum compounds -- Electric properties, Gallium nitrate -- Electric properties, Gold compounds -- Electric properties, Physics
Abstract

The morphology of ultrathin AlN/GaN high electron mobility transistors without or with TiAlNiAu Ohmic contacts is examined by using transmission electron microscopy and associated analytical methods. The contact inclusion (CI) density has increased with increasing annealing temperature but the lowest specific contact resistivity is obtained for structures annealed at 850 [degree]C and the AlN layers have remained intact in dislocation-free areas of all samples.

Published
2010

30. Electrical characterization of atomic layer deposited Al2O3/InN interfaces.

Author

Ye Jia, Dabiran, Amir M., and Singisetti, Uttam

Subjects
ATOMIC layer deposition, ALUMINUM oxide, THIN films, PHOTOELECTRON spectroscopy, HYDROBROMIC acid
Abstract

In this article, the authors report the electrical properties of atomic layer deposited Al2O3=InN interfaces evaluated by capacitance-voltage (C-V), current-voltage (I-V), and x-ray photoemission spectroscopy techniques. I-V characteristics show low leakage currents (300 pA=μm2) in the deposited dielectrics. However, C-V curves show that ex situ surface treatments with hydrochloric acid, ammonium sulfide, and hydrobromic acid has little effect on the surface electron accumulation layer, with an estimated interface state density over 4 x 1013=cm2. The effect of the surface treatments on valance band offset between Al2O3 and InN was also investigated. [ABSTRACT FROM AUTHOR]

Published
2016
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31. Biofunctionalized AlGaN/GaN high electron mobility transistor for DNA hybridization detection

Author

Thapa, Resham, primary, Alur, Siddharth, additional, Kim, Kyusang, additional, Tong, Fei, additional, Sharma, Yogesh, additional, Kim, Moonil, additional, Ahyi, Claude, additional, Dai, Jing, additional, Wook Hong, Jong, additional, Bozack, Michael, additional, Williams, John, additional, Son, Ahjeong, additional, Dabiran, Amir, additional, and Park, Minseo, additional

Published
2012
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36. High-Performance AlN/GaN HEMTs on Sapphire Substrate With an Oxidized Gate Insulator

Author

Chabak, Kelson D., primary, Walker, Dennis E., additional, Johnson, Michael R., additional, Crespo, Antonio, additional, Dabiran, Amir M., additional, Smith, David J., additional, Wowchak, Andrew M., additional, Tetlak, Stephen K., additional, Kossler, Mauricio, additional, Gillespie, James K., additional, Fitch, Robert C., additional, and Trejo, Manuel, additional

Published
2011
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38. SMALL SIGNAL AND DC CHARACTERISTICS OF ULTRA-THIN GaN/AlN/GaN HFETs

Author

CHABAK, KELSON D., primary, WALKER, DENNIS E., additional, CRESPO, ANTONIO, additional, TREJO, MANUEL, additional, KOSSLER, MAURICIO, additional, TETLAK, STEVE, additional, GILLESPIE, JAMES K., additional, FITCH, ROBERT C., additional, VIA, GLEN D., additional, DABIRAN, AMIR, additional, WOWCHAK, A.M., additional, and CHOW, P.P., additional

Published
2011
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41. Proton irradiation effects on AlN/GaN high electron mobility transistors

Author

Lo, C. F., primary, Chang, C. Y., additional, Chu, B. H., additional, Kim, H.-Y., additional, Kim, J., additional, Cullen, David A., additional, Zhou, Lin, additional, Smith, David. J., additional, Pearton, S. J., additional, Dabiran, Amir, additional, Cui, B., additional, Chow, P. P., additional, Jang, S., additional, and Ren, F., additional

Published
2010
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50. Thermal stability of Ohmic contacts to InN

Author

Khanna, Rohit, primary, Gila, B. P., additional, Stafford, L., additional, Pearton, S. J., additional, Ren, F., additional, Kravchenko, I. I., additional, Dabiran, Amir, additional, and Osinsky, A., additional

Published
2007
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