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Our study revealed that wet chemically processed metal-ion (i.e., Al +3 , Cr +3 , Ni +2 ) doped TiO 2 thin films could convert its conducting nature from n-type to extrinsic p-type. X-ray photoelectron spectroscopy (XPS) showed shifting of valence band edges with increasing doping concentration. The metal-ion doped TiO 2 films were employed as active component in bipolar heterojunction devices, which recorded low turn-on voltage and showed rectification behavior. These results were analyzed to conclude that the doped TiO 2 is p-type in nature. Temperature-dependent responses of field effect transistors (FETs) with the p-TiO 2 films as channel component revealed efficient features. Conclusive results revealed that reliable and reproducible p-type conductivity could be obtained with Ni +2 doped TiO 2 .

This study is a discussion of a new visual analysis technique for rock slope displacement. The presentation is based on data obtained from the system for monitoring displacement at a hydropower station in south China. A database technique, a three-dimensional displacement analysis model, and a visualization analysis technique make up the core of this study, and according to these techniques and methods, a set of software for the analytical slope displacement information system was developed.

We describe an optimized chemical synthesis route to obtain BaxSr1−xTiO3 (x = 0, 0.50, 0.67, 1.0) thin films with impeccable stoichiometry control. The molar ratios of the precursors were altered to produce the cubic phase of SrTiO3, Ba0.5Sr0.5TiO3, Ba0.67Sr0.33TiO3 and the tetragonal phase of BaTiO3 thin films on single crystalline p-Si (100) and quartz substrates. The obtained Raman spectra for the BaxSr1−xTiO3 thin films on quartz substrates showed characteristic vibration modes at ∼303, 515 and 716 cm−1. The active modes of BaTiO3 signify the tetragonal phase, which is important for its various technological advantages. The significant features of these materials were obtained through capacitance–voltage (C–V) measurements with Pt (or Ag)/BaxSr1−xTiO3/p-Si/Pt (or Ag) assemblies, at 1, 10 and 100 kHz. Substantial hysteresis (ΔV) of 315 mV (with Ag) and 219 mV (with Pt) was observed for Ba0.5Sr0.5TiO3, whereas for BaTiO3 and SrTiO3 the obtained hysteresis was 256 mV and 96 mV, respectively. The largest hysteresis of 793 mV was observed for SrTiO3 with a Pt electrode. The above findings are important for assessing the device compatibility of cost efficient solution processed BaxSr1−xTiO3 thin films.