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2. Waste Material Classification Based on a Wavelength-Sensitive Ge-on-Si Photodetector.

7. Light-Emitting Diodes for Energy Harvesting.

12. Ge/Si electrically tunable VIS/SWIR photodetector

17. CMOS-Compatible Bias-Tunable Dual-Band Detector Based on GeSn/Ge/Si Coupled Photodiodes

20. Dual-Band Ge-on-Si Photodetector Array With Custom, Integrated Readout Electronics.

21. High Sensitivity Flame Sensor Based on PbS Colloidal Quantum Dots

22. PbS Colloidal Quantum Dot Near Infrared Photoconductors: DC and Noise Characterization

27. Schottky Barrier Thin Film Transistor (SB-TFT) on low-temperature polycrystalline silicon

29. A Novel Integrated Smart System for Indoor Air Monitoring and Gas Recognition

36. Chemiresistive Device for the Detection of Nitroaromatic Explosives Based on Colloidal PbS Quantum Dots

37. Lead sulphide colloidal quantum dots for room temperature NO2 gas sensors

38. Growth and structural characterization of Sb2Se3 solar cells with vertical Sb4Se6 ribbon alignment by RF magnetron sputtering

39. Multispectral Photodetectors Based on PbS Colloidal Quantum Dots

40. Spectrally Tunable Germanium-on-silicon Photodetectors: Design and Simulations

41. Equivalent Circuit Model for Cu(In,Ga)Se2 Solar Cells Operating at Different Temperatures and Irradiance

42. Infrared photo-resistors based on recrystallized amorphous germanium films on flexible substrates

43. PbS colloidal quantum dot visible-blind photodetector for early indoor fire detection

44. High Responsivity Fire Detectors Based on PbS Colloidal Quantum Dot Photoconductors

45. Increasing responsivity and air stability of PbS colloidal quantum dot photoconductors with iodine surface ligands

46. TCAD simulation of thermally evaporated germanium

47. Near infrared photodetectors based on PbS colloidal quantum dots

48. High responsivity SiGe heterojunction phototransistor on silicon photonics platform

49. Germanium gate junction-field-effect phototransistor integrated on SOI platform

50. Extraction of Schottky barrier parameters for metal-semiconductor junctions on high resistivity inhomogeneous, semiconductors

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