1. Linewidth Roughness and Cross-sectional Measurements of Sub-50 nm Structures Using CD-SAXS and CD-SEM
- Author
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Christopher L. Soles, James S. Clarke, Benjamin Bunday, Wei-En Fu, D.L. Ho, Chengqing Wang, Ronald L. Jones, Kwang-Woo Choi, Wen-Li Wu, E.K. Lin, and John S. Villarrubia
- Subjects
Laser linewidth ,Cross section (physics) ,Materials science ,Optics ,business.industry ,Scattering ,Extreme ultraviolet ,Extreme ultraviolet lithography ,Surface roughness ,Optoelectronics ,business ,Collimated light ,Light scattering - Abstract
Critical dimension small angle X-ray scattering (CD- SAXS) is a metrology platform that is capable of measuring the average cross section and linewidth roughness (LWR) in test patterns with pitches ranging from 10 to 500 nm with sub-nm precision. These capabilities are obtained by measuring and modeling the scattering intensities of a collimated X-ray beam with sub-nm wavelength from a periodic pattern, such as those found in optical scatterometry targets. In this work, we evaluated the capability of both synchrotron-based and laboratory-scale CD-SAXS for characterizing LWR from measurements of periodic line/space patterns fabricated with extreme ultraviolet (EUV) lithography with sub-50 nm linewidths and designed with programmed roughness amplitude and frequency. For these patterns, CD-SAXS can provide high precision data on cross section dimension, including sidewall angle, line height, linewidth and pitch, as well as the amplitude of LWR. We will also discuss the status of ongoing efforts to compare quantitatively the CD- SAXS data with top-down scanning electron microscopy (CD- SEM) measurements.
- Published
- 2008