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A high-temperature silicon carbide power module using CMOS gate drive technology and discrete power devices is presented. The power module was aged at 200V and 300 °C for 3,000 hours in a long-term reliability test. After the initial increase, the variation in the rise time of the module is 27% (49.63ns@1,000h compared to 63.1ns@3,000h), whilst the fall time increases by 54.3% (62.92ns@1,000h compared to 97.1ns@3,000h). The unique assembly enables the integrated circuits of CMOS logic with passive circuit elements capable of operation at temperatures of 300°C and beyond.

Operation of SiC MOSFETs beyond 300°C opens up opportunities for a wide range of CMOS based digital and analogue applications. However the majority of the literature focuses only on the optimization of a single type of MOS device (either PMOS or more commonly NMOS) and there is a lack of a comprehensive study describing the challenge of optimizing CMOS devices. This study reports on the impact of gate oxide performance in channel implanted SiC on the electrical stability for both NMOS and PMOS capacitors and transistors. Parameters including interface state density (Dit), flatband voltage (VFB), threshold voltage (VTH) and effective charge (NEFF) have been acquired from C-V characteristics to assess the effectiveness of the fabrication process in realising high quality gate dielectrics. The performance of SiC based CMOS transistors were analyzed by correlating the characteristics of the MOS interface properties, the MOSFET 1/f noise performance and transistor on-state stability at 300°C. The observed instability of PMOS devices is more significant than in equivalent NMOS devices. The results from MOS capacitors comprising interface state density (Dit), flatband voltage (VFB), threshold voltage (VTH) for both N and P MOS are in agreement with the expected characteristics of the respective transistors.

We demonstrate the influence of enhancing the dielectric film used to form the gate in complimentary MOS circuits, designed for high temperature operation. The data show that the characteristics of both n-MOS and p-MOS capacitors and transistors have degraded capacitance characteristics in terms of the trapped charge in the dielectric, although the interface state density is dictated by the underlying stub oxide, at around 5×1012 cm-2eV-1. The use of a deposited oxide also reduces the variability in the critical electric field in the oxide, whilst maintaining a value of approximately 10MV cm-1. The channel mobility extracted from n-and pMOS transistors fabricated alongside the capacitors showed similar values, of approximately 3.8 cm2V-1s-1, which are limited by the high doping level in the epilayers used in this study.

We present the influence of phosphorous auto-doping on the characteristics of the oxide interface in 4H-SiC following high temperature gate oxide annealing. IV characteristics show no evidence of direct tunnelling breakdown; however Fowler Nordheim (F-N) conduction is observed in high electric field with the oxides able to sustain >10MV/cm. Capacitance Voltage data show DIT 12 eV-1cm-2 close to the conduction band edge after POA, with undoped samples demonstrating DIT below 5x1011 eV-1cm-2. Photo CV data indicates smaller flat band voltage shifts of 0.6V at midpoint for the undoped samples, in comparison to 0.9V for the phosphorous doped devices. Temperature and bias stress tests at 200°C showed marginal hysteresis (0.3V) in both wafers. Reliability of time-dependent constant current and constant voltage characteristics revealed higher TDDB lifetimes in the undoped wafer. We conclude that the unintentional incorporation of phosphorous into the gate stack as a result of high temperature POA of the doped field oxide leads to a variation in flat band shift, higher DIT, and lower dielectric reliability.

The potential to thermally grow SiO2 on silicon carbide has resulted in it becoming the technology of choice to realise high temperature CMOS circuits. The challenge to achieve a high quality gate stack relies on engineering the metal-insulator-semiconductor interfaces to enable reliable high temperature functionality. Here we describe the effect of different process conditions for the formation of the dielectric layer on the characteristics of the resulting devices. The operating characteristics at elevated temperatures depend critically on the quality of the gate stack. Therefore a systematic evaluation of the intrinsic properties of the gate stack and data from reliability tests are needed.

Low frequency noise in 4H-SiC lateral p-channel metal oxide semiconductor field effect transistors (PMOSFETs) in the frequency range from 1 Hz to 100 kHz has been used to investigate the relationship between gate dielectric fabrication techniques and the resulting density of interface traps at the semiconductor-dielectric interface in order to examine the impact on device performance. The results show that the low frequency noise characteristics in p-channel 4H-SiC MOSFETs in weak inversion are in agreement with the McWhorter model and are dominated by the interaction of channel carriers with interface traps at the gate dielectric/semiconductor interface.

Silicon Carbide devices are capable of operating as a semiconductor at high temperatures and this capability is being exploited today in discrete power components, bringing system advantages such as reduced cooling requirements [1]. Therefore there is an emerging need for control ICs mounted on the same modules and being capable of operating at the same temperatures. In addition, several application areas are pushing electronics to higher temperatures, particularly sensors and interface devices required for aero engines and in deep hydrocarbon and geothermal drilling. This paper discusses a developing CMOS manufacturing process using a 4H SiC substrate, which has been used to fabricate a range of simple logic and analogue circuits and is intended for power control and mixed signal sensor interface applications [2]. Test circuits have been found to operate at up to 400°C. The introduction of a floating capacitor structure to the process allows the use of switched capacitor techniques in mixed signal circuits operating over an extended temperature range.

The development of silicon carbide complimentary metal-oxide-semiconductor (CMOS) is a key-enabling step in the realisation of low power circuitry for high-temperature applications. This paper describes investigations using the charge pumping technique into the properties of the gate dielectric interface as part of the development of the technology to realise monolithic fabrication of both n and p channel devices. A comparison of the charge pumping technique and the Hill-Coleman and Terman methods is also carried out to explore the feasibility of the technique.

In this paper, the effect of inclusion of phosphorous (at a concentration below 1%) on the high temperature characteristics (up to 300 °C) of the SiO2/SiC interface is investigated. Capacitance–voltage measurements taken for a range of frequencies have been utilized to extract parameters including flatband voltage, threshold voltage, effective oxide charge, and interface state density. The variation of these parameters with temperature has been investigated for bias sweeps in opposing directions and a comparison made between phosphorous doped and as-grown oxides. At room temperature, the effective oxide charge for SiO2 may be reduced by the phosphorous termination of dangling bonds at the interface. However, at high temperatures, the effective charge in the phosphorous doped oxide remains unstable and effects such as flatband voltage shift and threshold voltage shift dominate the characteristics. The instability in these characteristics was found to result from the trapped charges in the oxide (±1012 cm−3) or near interface traps at the interface of the gate oxide and the semiconductor (1012–1013 cm−2 eV−1). Hence, the performance enhancements observed for phosphorous doped oxides are not realised in devices operated at elevated temperatures.

The recent development of silicon carbide complimentary metal-oxide-semiconductor (CMOS) is a key enabling step in the realisation of low power circuitry for high temperature applications, such as aerospace and well logging. This paper describes investigations into the properties of the gate dielectric as part of the development of the technology to realize monolithic fabrication of both n and p channel devices. A comparison of the oxide quality of the silicon carbide CMOS transistors is performed to examine the feasibility of this technology for high temperature circuitry.

A need for high temperature integrated circuits is emerging in a number of application areas. As Silicon Carbide power discrete devices become more widely available, there is a growing need for control ICs capable of operating at the same temperatures and mounted on the same modules. Also, the use of high temperature sensors, in, for example, aero engines and in deep hydrocarbon and geothermal drilling applications results in a demand for high temperature sensor interface ICs. This paper presents new results on a range of simple logic and analogue circuits fabricated on a developing Silicon Carbide CMOS process which is intended for mixed signal integrated circuit applications such as those above. A small family of logic circuits, pin compatible with the 74xx series TTL logic parts, has been designed, fabricated and tested and includes, for example, a Quad Nand gate and a Dual D-type flip-flop. These have been found to be functional from room temperature up to 400°C. Analogue blocks have been investigated with a view to using switched capacitor or autozero techniques to compensate for temperature and time induced drifts, allowing very high temperature operation.

The wide band-gap of Silicon Carbide (SiC) makes it a material suitable for high temperature integrated circuits [1], potentially operating up to and beyond 450°C. This paper describes the development of a 15V SiC CMOS technology developed to operate at high temperatures, n and p-channel transistor and preliminary circuit performance over temperature achieved in this technology.

The wide band-gap of Silicon Carbide makes it a material suitable for IC's [1] operating up to 450°C. The maximum operating temperature achieved will depend on the transistor technology selected, interconnect metallisation and device packaging. This paper describes transistor and circuit results achieved in SiC CMOS technology, where the major issue addressed is the gate dielectric performance. N and p-channel MOSFET structures have been demonstrated operating at temperatures up to 400°C Test circuits including simple logic cells, ring oscillators, operational amplifiers and gate drive circuits have been fabricated and the characteristics of ring oscillators are presented here. Floating capacitor structures have also been fabricated for use in future analogue and mixed signal circuits. This technology will be initially applied in applications including signal conditioning for sensors and control of SiC based power switching devices, where the high temperature capability will match that of the SiC power devices which are now becoming commercially available.

Streptococcus oralis is a member of the normal human oral microbiota, capable of opportunistic pathogenicity; like related oral streptococci, it exhibits appreciable phenotypic and genetic variation. A multilocus sequence typing (MLST) scheme for S. oralis was developed and the resultant data analysed to examine the population structure of the species. Analysis of 113 isolates, confirmed as belonging to the S. oralis/mitis group by 16S rRNA gene sequencing, characterized the population as highly diverse and undergoing inter- and intra-species recombination with a probable clonal complex structure. ClonalFrame analysis of these S. oralis isolates along with examples of Streptococcus pneumoniae, Streptococcus mitis and Streptococcus pseudopneumoniae grouped the named species into distinct, coherent populations and did not support the clustering of S. pseudopneumoniae with S. mitis as reported previously using distance-based methods. Analysis of the individual loci suggested that this discrepancy was due to the possible hybrid nature of S. pseudopneumoniae. The data are available on the public MLST website (http://pubmlst.org/soralis/).

We report on a direct epitaxial growth approach for the heterogeneous integration of high-speed III–V devices with Si CMOS logic on a common Si substrate. InP-based heterojunction bipolar transistor (HBT) structures were successfully grown on Si-on-lattice-engineered- substrate (SOLES) and Ge-on-insulator-on-Si (GeOI/Si) substrates using molecular beam epitaxy. Structurally, the epiwafers exhibit sharp interfaces and a threading dislocation density of 3.5×10 7 cm −2 as measured by plan-view transmission electron microscopy. HBT devices fabricated on GeOI/Si substrates have current gain of 55–60 at a base sheet resistance of 650–700 Ω/sq, and f t and f max of around 220 GHz. HBT structures with DC and RF performance similar to those grown on lattice-matched InP were also achieved on patterned SOLES substrates with growth windows as small as 15×15 μm 2 . These results demonstrate a promising path of heterogeneous integration and selective placement of III–V devices at arbitrary locations on Si CMOS wafers.

Actinomyces naeslundii is an important early colonizer in the oral biofilm and consists of three genospecies (1, 2 and WVA 963) which cannot be readily differentiated using conventional phenotypic testing or on the basis of 16S rRNA gene sequencing. We have investigated a representative collection of type and reference strains and clinical and oral isolates (n=115) and determined the partial gene sequences of six housekeeping genes (atpA, rpoB, pgi, metG, gltA and gyrA). These sequences identified the three genospecies and differentiated them from Actinomyces viscosus isolated from rodents. The partial sequences of atpA and metG gave best separation of the three genospecies. A. naeslundii genospecies 1 and 2 formed two distinct clusters, well separated from both genospecies WVA 963 and A. viscosus. Analysis of the same genes in other oral Actinomyces species (Actinomyces gerencseriae, A. israelii, A. meyeri, A. odontolyticus and A. georgiae) indicated that, when sequence data were obtained, these species each exhibited

Actinomyces spp., predominant members of human oral biofilms, may use extracellular sialidase to promote adhesion, deglycosylate immunoglobulins and liberation of nutrients. Partial nanH gene sequences (1,077 bp) from Actinomyces oris (n=74), Actinomyces naeslundii (n=30), Actinomyces viscosus (n=1) and Actinomyces johnsonii (n=2) which included the active-site region and the bacterial neuraminidase repeats (BNRs) were compared. The sequences were aligned and each species formed a distinct cluster with five isolates having intermediate positions. These five isolates (two A. oris and three A. naeslundii) exhibited interspecies recombination. The nonsynonymous/synonymous ratio was

The predominant Veillonella spp. were isolated from the dorsum surface of the tongues of 11 healthy adults and identified to species level using rpoB sequencing because 16S ribosomal RNA sequence analysis does not reliably differentiate between all members of this genus. In all, 253 isolates were identified and the mean proportion (+/- SE) of Veillonella spp. per sample was 16.2 (+/- 3.6) with a range of 3.0% to 36.3% of the total anaerobic colony count. The predominant species were Veillonella atypica (10/11), Veillonella dispar (9/11) and Veillonella rogosae (8/11) because they were isolated from the majority of subjects. Veillonella parvula was isolated from only one subject while Veillonella dentocariosi and Veillonella montpelleriensis were not isolated from any subject.

Strains of a novel anaerobic, Gram-negative coccus were isolated from the supra-gingival plaque of children. Independent strains from each of six subjects were shown, at a phenotypic level and based on 16S rRNA gene sequencing, to be members of the genus Veillonella. Analysis revealed that the six strains shared 99.7 % similarity in their 16S rRNA gene sequences and 99.0 % similarity in their rpoB gene sequences. The six novel strains formed a distinct group and could be clearly separated from recognized species of the genus Veillonella of human or animal origin. The novel strains exhibited 98 and 91 % similarity to partial 16S rRNA and rpoB gene sequences of Veillonella parvula ATCC 10790(T), the most closely related member of the genus. The six novel strains could be differentiated from recognized species of the genus Veillonella based on partial 16S rRNA and rpoB gene sequencing. The six novel strains are thus considered to represent a single novel species of the genus Veillonella, for which the name Veillonella rogosae sp. nov. is proposed. The type strain is CF100(T) (=CCUG 54233(T)=DSM 18960(T)).

INTRODUCTION Previously we have shown that reference and freshly isolated Treponema denticola cultures possess 5alpha-reductase (5alpha-R) and 3beta- and 17beta-hydroxysteroid dehydrogenase activity. A gene matching the 3-oxo-5alpha-steroid 4-dehydrogenase family protein (gene ID: 2739284; locus tag: TDE2697) has been identified in T. denticola ATCC 35405. The aim of the work presented here was to optimize assay conditions and determine steroid substrate specificities for the 5alpha-R activity of T. denticola ATCC 33520. METHODS 5alpha-R activity of cell-free preparations was assayed with radioactive steroid substrates. 5alpha-R-reduced products were identified using thin-layer chromatography and a radioisotope scanner. Assay conditions were optimized for co-factor, buffer and pH requirements. Apparent substrate specificities were determined for progesterone, 4-androstenedione, testosterone and corticosterone. The time-course for metabolism of radiolabelled progesterone and cholesterol substrates was investigated with anaerobic cultures. RESULTS The optimum pH for 5alpha-R was 5.5 and the preferred co-factor was NADPH. The order of the steroids with respect to their 5alpha-R substrate specificities was (in descending order): progesterone, 4-androstenedione, testosterone and corticosterone. There are at least two intermediates in the synthesis of 5alpha-dihydrocholesterol from cholesterol. CONCLUSION These results suggest that the 3-oxo-5alpha-steroid 4-dehydrogenase family protein gene of T. denticola codes for a functional protein that resembles mammalian 5alpha-R isoenzyme 2 with regard to co-factor requirement and pH optimum.

Objective Sodium hexametaphosphate (SHMP) is a widely used industrial preservative commonly found in children's drinks. In this paper we examined the effect of SHMP incorporated into children's drinks on acid production by the oral biofilm by monitoring salivary concentrations of lactic acid. Materials and method Twelve healthy adult subjects with an average age 36 years (range 26–54 years) consumed 10 ml from four children's beverages (Coca Cola and three types of Sunny Delight supplemented with SHMP) and a standard solution of sucrose. Saliva was collected at intervals following exposure of the oral biofilm to the drinks and the clearance of carbohydrates and the appearance of lactate was measured using standard enzymatic techniques. Results All the carbohydrates derived from the drinks were cleared from saliva within 15 min of consumption. Comparison of two drinks [Sunny D Normal and Sunny C] with the same carbohydrate, but different SHMP concentrations suggested that SHMP in these beverages had no significant effect on acid production. Conclusions In this clinical study the role of SHMP, incorporated in common beverages, did not inhibit acid production from carbohydrates.

MDPB, 12-methacryloyloxydodecylpyridinium bromide, was tested for its ability to inhibit the growth of organisms associated with active root caries lesions and to modify the growth characteristics of these organisms at sub-MICs. MICs and MBCs of MDPB for independent isolates (n=5) of the following taxa: Streptococcus mutans, Streptococcus oralis, Streptococcus salivarius, Actinomyces naeslundii, Actinomyces israelii, Actinomyces gerensceriae, Actinomyces odontolyticus, Lactobacillus spp., and Candida albicans were determined, and the effects at sub-MIC on microbial growth kinetics were assessed. All isolates were sensitive to inhibition by MDPB. The median MICs and MBCs of MDPB for these organisms were in the range of 3.13 to 25.0 microg/ml and 6.25 to 50.0 microg/ml, respectively. As for the influence of pH, inhibition was sensitive to acidic pH. Even at sub-MICs, the growth of all strains, measured as cell yield and doubling time, was significantly reduced. Based on the results of this study, MDPB exhibited the potential to inhibit the growth of microbiota associated with active root caries lesions.

Current limiting devices (CLD), which employ back-to-back connected high voltage normally-ON SiC-based vertical junction filed effect transistors (VJFETs), are realized to protect the sensitive aircraft electronics from the adverse effects of a lightning strike to the airframe. The functionality of the packaged CLDs with high and low current levels is demonstrated in low voltage static and transient tests. Electro-thermal simulations are performed to optimize the thermal performance of CLDs for high-energy test environments.

The wide-scale application of composite materials, such as carbon, aramid and glass fiber reinforced plastic, in aircraft fuselage to improve the fuel efficiency, have made the modern designs more susceptible to lightning strikes[1]. Widely used surge protection techniques, such as high power silicon zeners “tranzorbs”, metal oxide varistors and gas discharge tubes-based suppressors, are mostly incompatible with modern designs since the surge level could significantly rise, which generally results in larger components [2]. Under typical conditions, the peak voltage could be as high as ± 3.8 kV, while impedances are low. Realization of high performance current limiters, which could survive the combination of high-voltage and high temperature, is essential to overcome the issue of low impedance met in composite airframe environments [3].

The aim was to investigate whether reference cultures and fresh isolates of Treponema denticola are able to 5alpha-reduce and further metabolise testosterone, 4-androstenedione, progesterone, corticosterone, cortisol or cholesterol. Two reference and five freshly isolated cultures of T. denticola were incubated with either radiolabeled or unlabeled steroid substrates; in the first case products were identified by thin layer chromatography and in the latter by gas chromatography-mass spectroscopy. All the substrates were 5alpha-reduced. Both reference cultures and fresh isolates of T. denticola presented 3beta- and 17beta-hydroxy steroid dehydrogenase activity. It was concluded that T. denticola was capable of steroid metabolism and hypotheses are discussed regarding the in vivo function of this metabolism including, T. denticola utilising host supplied steroids as growth factors and T. denticola steroid metabolism acting as a virulence factor.

The reason that children with cleft palates tend to have a greater prevalence of tooth decay than normal children is unclear. We hypothesized that children with cleft palates would have increased oral clearance times for foods and, consequently, higher levels of caries and caries-associated micro-organisms than control children. Children aged 6–16 yrs, with (n = 81) or without (n = 61) cleft palates, were studied. Children with cleft palates had DMFT and dmft scores greater (p < 0.01) than those of the control group. The number of caries-associated organisms was greater in the saliva of the cleft palate children (all p < 0.001). The oral hygiene, plaque and gingival index scores were greater (p < 0.0001), oral clearance was longer (p < 0.01), and levels of sucrose and starch-derived saccharides higher (p < 0.01) in the cleft palate group. However, salivary concentrations of organic acids were lower in the children with craniofacial disorders, probably reflecting the altered physiology of the more mature dental biofilm. The longer oral clearance times of foods and the consequent generation of fermentable sugars from starches may contribute to the higher caries prevalence observed in children with cleft palates.

The hypotheses that raw fruits, whether whole or pulped, were cleared rapidly from the mouth and that the sugars in the whole and pulped fruits are fermented with equal efficiency to acids by the oral microflora were tested in this study. Groups of 7–9 adult subjects chewed 10 g of raw, whole or pulped fruit (apple, banana, orange, pear and pineapple) for 1 min and whole, unstimulated saliva samples were collected during the following 60-min interval. Each saliva sample was assayed for the concentrations of fruit-derived sugars (glucose, fructose and sucrose), fruit-derived acids (malic and citric) and acids which may be produced as a result of bacterial fermentation (acetic, lactic, formic and succinic). We found the fruit-derived sugars were rapidly cleared from the mouth (within 5 min). The major bacterially produced acids were lactic and succinic, which reached maximum concentrations in the 5-min sample. There was no significant difference, within a fruit, in the salivary levels of any of the sugars or acids between the raw whole or raw pulped forms. In light of these findings it seems unwise to assume that fruits may be consumed without consideration of their acidogenic potential.

A high manufacturing readiness level silicon carbide (SiC) CMOS technology is presented. The unique process flow enables the monolithic integration of pMOS and nMOS transistors with passive circuit elements capable of operation at temperatures of 300 °C and beyond. Critical to this functionality is the behaviour of the gate dielectric and data for high temperature capacitance–voltage measurements are reported for SiO2/4H-SiC (n and p type) MOS structures. In addition, a summary of the long term reliability for a range of structures including contact chains to both n-type and p-type SiC, as well as simple logic circuits is presented, showing function after 2000 h at 300 °C. Circuit data is also presented for the performance of digital logic devices, a 4 to 1 analogue multiplexer and a configurable timer operating over a wide temperature range. A high temperature micro-oven system has been utilised to enable the high temperature testing and stressing of units assembled in ceramic dual in line packages, including a high temperature small form-factor SiC based bridge leg power module prototype, operated for over 1000 h at 300 °C. The data presented show that SiC CMOS is a key enabling technology in high temperature integrated circuit design. In particular it provides the ability to realise sensor interface circuits capable of operating above 300 °C, accommodate shifts in key parameters enabling deployment in applications including automotive, aerospace and deep well drilling.

Electrical conductivity during the XPS of ∽100 nm thick films of poly(methyl methacrylate) (PMMA) on silicon was induced by heating to above 100°C. Rapid x-ray-induced depolymerization set in at about the same temperature. The electrical conductivity allowed acquisition of high-resolution core line and valence band spectra from s- and i-PMMA, free of differential charging effects. Within a time-scale of ∽25 min the depolymerization did not affect the appearance of the spectra. The presence of methoxy groups at the uppermost surface of the two heated samples was confirmed by angle-dependent XPS, with an indication of a higher surface concentration of such groups for the s-polymer. At ambient temperature the valence band spectra of the two stereoisomers were identical, but when heated to above 100°C a difference of ∽0.15 eV developed in the O 2s binding energies; this is interpreted as being due to preferential crystallization of the s-polymer. Copyright © 1999 John Wiley & Sons, Ltd.

A group of 20 students, harbouring >104 mutans streptococci per millilitre of saliva, was enrolled into the study. Models for sampling, reproducibly, the dental plaque present in specific sites (fissure and smooth surface) on the dentition were developed and validated. Withdrawal of normal oral hygiene procedures for only 1 day resulted in approximately 10–fold increases in the number of micro–organisms recovered from both sites. The effect of supplementing the subjects’ diets with particular food items given 5 times per day [lemonade (5.8% w/v sugars, 250 ml), biscuits (digestive biscuits, 67.6% w/w carbohydrate of which 22% w/w was sugars and 45.6% w/w was starch), caramel toffees and sugar lumps] on the number of micro–organisms recovered and on the composition of the flora at both sites was determined. Dental plaque samples were taken after 5 days and it was found that supplementation of the diet with toffee and sugar lumps resulted in significantly more micro–organisms at both sampling sites. The supplementation of the diets with lemonade or biscuits did not significantly alter the numbers of micro–organisms recovered from either site. The percentage composition of the plaque samples from both dental sites remained relatively unaffected by oral hygiene although there were lower levels of mutans streptococci which might be related to the use of an antimicrobial toothpaste containing fluoride, triclosan and zinc citrate. This study suggests that the cariogenicity of certain sucrose–containing foods may, in part, be due to the enhancement of plaque accumulation in addition to other effects on the percentage composition of the plaque which may become manifest on prolonged usage of these dietary foodstuffs. These observations are consistent with dietary survey findings which often find consumption of confectionery related to caries experience or incidence.

Angle-dependent photoelectron spectroscopy has been used to study some details of the chemistry at the interface between indium-tinoxide, deposited by argon plasma sputtering, and poly( p -phenylene vinylene). We find chemical species corresponding to different oxidized states of poly( p -phenylene vinylene) and we discuss their assignment with reference to those produced in photo-oxidation experiments.

We present the characteristics of a high temperature CMOS integrated circuit process based on 4H silicon carbide designed to operate at temperatures beyond 300°C. N-channel and P-channel transistor characteristics at room and elevated temperatures are presented. Both channel types show the expected low values of field effect mobility well known in SiC MOSFETS. However the performance achieved is easily capable of exploitation in CMOS digital logic circuits and certain analogue circuits, over a wide temperature range.Data is also presented for the performance of digital logic demonstrator circuits, in particular a 4 to 1 analogue multiplexer and a configurable timer operating over a wide temperature range. Devices are packaged in high temperature ceramic dual in line (DIL) packages, which are capable of greater than 300°C operation. A high temperature “micro-oven” system has been designed and built to enable testing and stressing of units assembled in these package types. This system heats a group of devices together to temperatures of up to 300°C while keeping the electrical connections at much lower temperatures. In addition, long term reliability data for some structures such as contact chains to n-type and p-type SiC and simple logic circuits is summarized.

The molecular orientation of perfluoroicosane (PFI), n-C 20 F 42 , vacuum-deposited onto plain substrates (silicon and gold) and onto poly(tetrafluoroethylene) (PTFE) tribological transfer films, has been studied by angle-dependent X-ray photoelectron spectroscopy (XPS) and reflection–absorption IR spectroscopy (RAIRS). On the plain substrates PFI forms an ordered film with the molecular chains oriented perpendicular to the substrate. However, when deposited onto a PTFE tribological transfer film, epitaxial growth occurs such that the PFI chains align with the PTFE chains, parallel to the substrate. For PFI on silicon, XPS reveals a surface chemical shift for the uppermost CF 3 groups of the sample.

High resolution monochromated XPS has been used to investigate the surface science of a variety of recycled polyethylene films (both filled and unfilled). The starting materials for these studies were obtained from reclamation and recycling of polyethylene sheets used in large volume in the Horticultural Industry. The level of surface functionalisation and contaminants found in the recycled materials make them potential candidates for both primary and even ‘premium’ recycling opportunities in areas where surface properties are the dominant effect.

Crystalline regions of poly(ethylene terephthalate) (PET) are associated with the trans glycol conformation of the polymer repeat unit. Amorphous regions are largely associated with the gauche conformation. We describe experiments which follow the development of trans conformers at the surface and in the bulk of amorphous PET films (∼150 nm thick) annealed above the glass transition temperature T g . X-ray photoelectron spectroscopy was used to probe the surface region to a depth of ∼5 nm and Fourier transform infrared spectroscopy (FTIR) to examine changes in the bulk. For PET samples annealed at 90°C no conformational change was observed either at the surface or in the bulk after 120 min. At 95 and 110 °C the gauche to trans conformational change was over in ∼30 min (surface) and >120 min (bulk) and ∼15 minutes (surface) and ∼30 min (bulk), respectively. Hence the surface rearranges faster than the bulk, consistent with increased mobility at the surface due to the polymer chains being less constrained. This is analogous with the phenomenon of surface premelting in crystalline solids. A comparison of reflection-absorption infrared spectroscopy and transmission FTIR data demonstrates the occurrence of molecular reorientation in the bulk in addition to conformational change.

Gingival crevicular fluid (GCF) contains several different proteinase activities and the study sought to clarify their sources. Gingival tissue and GCF were collected from chronic periodontitis patients. Gel-filtration chromatography of crude tissue extracts yielded cathepsin B and tryptase fractions sensitive to cysteine and serine proteinase inhibitors, respectively. Cell sonicates of suspected periodontal pathogens were prepared from broth cultures of reference strains. Of these, Porphyromonas gingivalis showed much the strongest activity and this had an effector response consistent with the metal-dependent cysteine proteinase described by others. Banding patterns in GCF, tissue and bacterial samples were compared on substrate-impregnated overlay membranes applied to isoelectric focusing gels. On Z-Val-Lys-Lys-Arg-AFC overlays, GCF had bands corresponding to tissue cathepsin B and the enzyme from P. gingivalis, though a contribution from Treponema denticola could not be ruled out. Use of D-Val-Leu-Arg-AFC overlays showed GCF activity similar to tissue tryptase. In GCF there were additional bands that did not correspond to any tissue or bacterial samples and on Z-Ala-Ala-Lys-AFC overlays these closely resembled activity in parotid saliva. The results confirmed that GCF contains tissue cathepsin B and tryptase, while the apparent presence of enzymes from P. gingivalis and possibly T. denticola is consistent with previous reports linking activity to these organisms. The saliva bands demonstrated that contamination of GCF may occur despite rigorous collection procedures.

High-resolution monochromated X-ray photoelectron spectroscopy (X.p.s.) (core line and valence band) was used to study poly(ethylene terephthalate (PET) as biaxially oriented crystalline film, spin cast amorphous film and amorphous polymer melt. On going from crystalline to amorphous PET the C 1 s glycol component shifts ≈ +0.10 to +0.14eV, relative to the aromatic and carboxyl components. We ascribe this to the change from trans - to gauche -conformation of the glycol segment. Small differences occur in the valence bands of the crystalline and amorphous samples. Time-dependent studies demonstrate that the melt spectra are not significantly affected by thermal degradation. Under the conditions of the X.p.s. analysis molten PET behaves as an electrical conductor.

Atomic force microscopy (AFM) and Fourier transform infra-red spectroscopy ( FT i.r.) were used to investigate the nature of poly(ethylene terephthalate) (PET) films formed on the surface of a highly oriented poly(tetrafluoroethylene) (PTFE) substrate mechanically deposited on silicon wafers. PTFE films have been previously shown to be highly effective substrates for the growth of oriented overlayers; such materials often have unique properties. In this study we report FT i.r. observations of an increase in crystallinity of a PET film formed on such an oriented substrate when compared to a film formed on the untreated silicon wafer. AFM imaging is used to show the deeply contrasting surface of the PET film formed on each substrate.

By use of highly oriented films, the polarization dependence of the C 1s and F 1s near-edge absorption spectra of poly(tetrafluoroethylene) has been measured. At least at the carbon K edge, good agreement is obtained with the predicted behavior based on a consideration of the one-dimensional band structure and the effect of symmetry breaking. The findings are also relevant for the assignment of the resonances in long chain alkanes, a subject which has recently been somewhat controversial

Interface science of polymer/metal semiconductor ceramic interfaces has to date focused largely on model quasi two-dimensional systems and yet the long-term future is their role in three-dimensional environmentally adaptive, self-repairing ‘SMART’ materials systems, that start to provide a genuine mimic of nature's “composite” materials systems. It is becoming clear that polymer science and technology will play a pivotal role in the emerging ‘chemistry direct to shapes’ era where molecular level design, synthesis and assembly of the spatially resolved ‘active’ materials systems of the future will bypass many of the issues of incommensurate engineering associated with bolt-on actuators, sensors, etc., currently envisaged. The issues of massively parallel information processing to provide a knowledge response mode will also hinge on developments in polymer science and the molecular level control of interface structures. The core competencies required are already becoming apparent and are briefly reviewed in this paper.

High resolution x-ray photoelectron spectra (XPS) are reported for poly(ethylene terephthalate) (PET) in the form of biaxially oriented crystalline film and amorphous polymer melt (i.e., molten inside the spectrometer during analysis). A small(∼0.14 eV) but unambiguous shift of the C 1s glycol component, relative to the aromatic and carboxyl components, is observed on going from crystalline film to amorphous polymer melt. It is known from x-ray diffraction data and infrared spectroscopy that the crystalline to amorphous transition is accompanied by a change from trans to gauche conformation of the glycol unit of the polymer repeat unit, and we ascribe the observed C 1s glycol shift to the same effect. Small differences between crystalline and amorphous PET are also observed in the valence band. Under the conditions of the XPS analysis the polymer melt appears to be electrically conducting.

Under the conditions of x-ray photoelectron spectra (XPS) analysis organic liquids appear to behave as electrical conductors. Here we report x-ray photoelectron spectra for pentaphenylether and pentaphenyltrimethyltrisiloxane oils at room temperature. These materials are commercially available as diffusion pump fluids (Santovac 5 and DC705, respectively). Their room temperature vapor pressures are ∼2 × 10−8 Pa and they can be studied by XPS without hazard to the spectrometer vacuum system. Both materials were investigated as relatively thick liquid films (∼10 μm, as determined by weighing) on a piece of silicon wafer. A solid organic film of this thickness would be expected to be an XPS insulator. The oil films on silicon required no external charge compensation and gave high resolution C 1s spectra with the first component of the envelope very close to 285 eV binding energy. Measured binding energies closely followed a bias voltage applied to the silicon wafer. Oil films thicker than 10 μm behaved as XPS...

Ordered ultra-thin films of poly(2,5-diheptyl- p -phenylene) (or DHPPP) have been formed upon ordered substrates consisting of parallel chains of polytetrafluoroethylene (PTFE) on silicon (100) wafers. The electronic structure of the ordered DHPPP has been studied by angle-resolved ultraviolet photoelectron spectroscopy (ARUPS). The results indicate that the aliphatic side groups of the DHPPP molecules are ordered parallel to the PTFE chains, resulting in the PPP backbone lying at an angle of roughly 90° to the PTFE chains.

We present recent results on the direct heterogeneous integration of InP HBTs and Si CMOS on a silicon template wafer or SOLES (Silicon On Lattice Engineered Substrate). InP HBTs whose performance are comparable to HBTs on the native InP substrates have been repeatedly achieved. 100% heterogeneous interconnect yield has been achieved on daisy chain test structures with CMOS-InP HBT spacing (interconnect length) as small as 2.5um. In DARPA COSMOS Phase 1 we designed and fabricated a differential amplifier that met the program Go/NoGo metrics with first pass design success. As the COSMOS Phase 2 demonstration vehicle we designed and fabricated a low power dissipation, high resolution, 500MHz bandwidth digital-to-analog converter (DAC).

Actinomyces naeslundii and Actinomyces oris are members of the oral biofilm. Their identification using 16S rRNA sequencing is problematic and better achieved by comparison of metG partial sequences. A. oris is more abundant and more frequently isolated than A. naeslundii. We used a multi-locus sequence typing approach to investigate the genotypic diversity of these species and assigned A. naeslundii (n = 37) and A. oris (n = 68) isolates to 32 and 68 sequence types (ST), respectively. Neighbor-joining and ClonalFrame dendrograms derived from the concatenated partial sequences of 7 house-keeping genes identified at least 4 significant subclusters within A. oris and 3 within A. naeslundii. The strain collection we had investigated was an under-representation of the total population since at least 3 STs composed of single strains may represent discrete clusters of strains not well represented in the collection. The integrity of these sub-clusters was supported by the sequence analysis of fimP and fimA, genes coding for the type 1 and 2 fimbriae, respectively. An A. naeslundii subcluster was identified with both fimA and fimP genes and these strains were able to bind to MUC7 and statherin while all other A. naeslundii strains possessed only fimA and did not bind to statherin. An A. oris subcluster harboured a fimA gene similar to that of Actinomyces odontolyticus but no detectable fimP failed to bind significantly to either MUC7 or statherin. These data are evidence of extensive genotypic and phenotypic diversity within the species A. oris and A. naeslundii but the status of the subclusters identified here will require genome comparisons before their phylogenic position can be unequivocally established.

Highly oriented molecular structures of organic molecules are important in many applications of thin films and interfaces. Recently, it has been shown that poly(tetrafluoroethylene), or PTFE, can be deposited mechanically to form highly oriented thin films on glass substrates. Such oriented PTFE films can in rurn be used as substrates for growth of ordered films of organic molecules and polymers, e. g. conjugated polymers. Despite the fact PTFE is electrically insulating, we have been able to use scanning tunneling microscopy (STM) to examine details of oriented ultrathin PTFE films deposited on various substrates, in particularly Pt and highly ordered pyrolytic graphite (HOPG). Ordered structures originating from aligned chains were observed, and reproducible images were obtained at the submicron level. Nanometric molecular details are more difficult to resolve, but indicate interesting features. In particular, we have observed regions of parallel zig-zag shaped molecules, which are separated by approximately 6 A.

Recently, it has been shown that ordered overlayers of many organic and polymeric materials can be made on specially-prepared ultra-thin films of polytetrafluoroethylene, or PTFE [1]. We have prepared PTFE films, in the range of 15 to 35 A in thickness, by a slightly modified version of the hot-dragging method of Pooley and Tabor [2], and studied the electronic structure using ultraviolet and X-ray photoelectron spectroscopy, UPS and XPS. The electronic structure results are compared with new ab initio quantum chemical electronic structure calculations.