1. Embedded measurement of the SET switching time of RRAM memory cells
- Author
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F. Jebali, E. Muhr, M. Alayan, M.C. Faye, D. Querlioz, F. Andrieu, E. Vianello, G. Molas, M. Bocquet, J.M. Portal, Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Centre de Nanosciences et de Nanotechnologies (C2N), and Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS)
- Subjects
Switching Time ,Timeto-Digital Converter ,RRAM ,Write termination ,RRAM Switching Time Write termination Timeto-Digital Converter ,[SPI.TRON]Engineering Sciences [physics]/Electronics - Abstract
This paper presents an embedded measurement circuit dedicated to the extraction of the SET switching time of RRAM memory cells. A brief overview of the measurement circuit, designed in a hybrid 130nm technology with HfO2 BEoL RRAMs, is given with emphasis on the write termination (WT) mechanism and the switching time acquisition thanks to a Time-to-Digital Converter (TDC) shift and capture mechanism. The experimental test setup and test conditions are then described, including automated measurement script. Following our test procedure, we are able to extract the measured RRAM resistance values and the associated SET switching times, using a de-embedding process. Resistances and SET switching time values fully complies with the ones obtained in the literature through heavy waveguide measurement setups, validating our approach.
- Published
- 2022
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