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The linear and non-linear thermoelectric properties of molecular junctions are theoretically studied close to room temperature within a model including electron–electron and electron–vibration interactions on the molecule. A non-equilibrium adiabatic approach is devised to include a strong Coulomb repulsion and applied to the self-consistent calculation of electron and phonon transport properties of massive molecules, such as fullerenes, within the Coulomb blockade regime. We show that the phonon thermal conductance is quite sensitive to strong electron–electron interactions within the intermediate electron–vibration coupling regime. Furthermore, the electron–vibration interaction enhances both phonon and electron thermal conductance, and it reduces not only the charge conductance, but also the thermopower. The effect of the strong electron–electron interactions provides a peculiar double-peak structure to the thermopower versus charge conductance curve. Finally, within the regime of weak to intermediate electron–vibration and vibration–lead phonon coupling, the peak values of the thermoelectric figure of merit are slightly less than unity, and the maximal efficiency of the junction can reach values slightly less than half of the Carnot limit for large temperature differences between the leads.

In this paper we study the electron–electron correlation in silicon anisotropic quantum dots. A variational approach to the problem of the quantum confinement of two electrons in an ellipsoidal quantum dot is presented. All the calculations are done as a function of the dot aspect ratio, showing how the Coulomb repulsion and dielectric effects (related to the dielectric mismatch between the dot and the surrounding medium) give rise to shape-dependent correlation effects. The energy needed to add a second electron to the ellipsoidal quantum dot is calculated and discussed as well. [ABSTRACT FROM AUTHOR]

By combining ab initio all-electron localized orbital and pseudopotential plane-wave approaches we report on calculations of the electron affinity (EA) and the ionization potential (IP) of (5, 5) and (7, 0) single-wall carbon nanotubes. The role played by finite-size effects and nanotube termination has been analysed by comparing several hydrogen-passivated and not passivated nanotube segments. The dependence of the EA and IP on both the quantum confinement effect, due to the nanotube finite length, and the charge accumulation on the edges, is studied in detail. Also, the EA and IP are compared to the energies of the lowest unoccupied and highest occupied states, respectively, upon increasing the nanotube length. We report a slow convergence with respect to the number of atoms. The effect of nanotube packing in arrays on the electronic properties is eventually elucidated as a function of the intertube distance. [ABSTRACT FROM AUTHOR]

We show that the central finite difference formula for the first and the second derivative of a function can be derived, in the context of quantum mechanics, as matrix elements of the momentum and kinetic energy operators on discrete coordinate eigenkets |xn〉 defined on a uniform grid. Starting from the discretization of integrals involving canonical commutations, simple closed-form expressions of the matrix elements are obtained. A detailed analysis of the convergence toward the continuum limit with respect to both the grid spacing and the derivative approximation order is presented. It is shown that the convergence from below of the eigenvalues in electronic structure calculations is an intrinsic feature of the finite difference method. © 2018 Wiley Periodicals, Inc., (© 2018 Wiley Periodicals, Inc.)

Focus of the review is on experimental set-ups and theoretical proposals aimed to enhance thermoelectric performances of molecular junctions. In addition to charge conductance, the thermoelectric parameter commonly measured in these systems is the thermopower, which is typically rather low. We review recent experimental outcomes relative to several junction configurations used to optimize the thermopower. On the other hand, theoretical calculations provide estimations of all the thermoelectric parameters in the linear and non-linear regime, in particular of the thermoelectric figure of merit and efficiency, completing our knowledge of molecular thermoelectricity. For this reason, the review will mainly focus on theoretical studies analyzing the role of not only electronic, but also of the vibrational degrees of freedom. Theoretical results about thermoelectric phenomena in the coherent regime are reviewed focusing on interference effects which play a significant role in enhancing the figure of merit. Moreover, we review theoretical studies including the effects of molecular many-body interactions, such as electron-vibration couplings, which typically tend to reduce the efficiency. Since a fine tuning of many parameters and coupling strengths is required to optimize the thermoelectric conversion in molecular junctions, new theoretically proposed set-ups are discussed in the conclusions.

First principles calculations were performed to study the interface electronic structure and the Schottky barrier heights (SBHs) of ZnO-metal interfaces. Different kinds of metals were considered with different chemistries on the polar (0 0 0 1) and (0 0 0 1¯) ZnO surfaces. The projection of the density of states on the atomic orbitals of the interface atoms reveals that two kinds of interface electronic states appear: states due to the chemical bonding which appear at well defined energies and conventional metal-induced gap states associated with a smooth density of states in the bulk ZnO band gap region. The relative weight and distribution of the two classes of states depend on both the ZnO substrate termination and on the metal species. SBHs are found to be very sensitive to the specific interface chemical bonding. In particular, it is possible to note the occurrence of either Schottky barriers or Ohmic contacts. Our results have been compared with experiments and with available phenomenological theories, which estimate the SBH from few characteristic material parameters. Finally, the electronic and structural contributions to the SBH have been singled out and related to the different charge transfers occurring at the different interfaces.

We address the structural and electronic properties of graphene nanoribbons (GNRs) covalently immobilized on a metallic substrate by means of an organic layer. The GNR-organic layer and organic layer-metal interfaces can be thought of as constituents of a nanodevice and have been accurately studied using large-scale density functional theory calculations. Our results demonstrate the possibility of combining nanopatterned metal-organic layer substrates with selected GNRs to obtain well ordered and stable structures while preserving the GNR energy band gap, an essential requirement for any switching nanodevice.

We characterize the transport properties of functionalized graphene nanoribbons using extensive first-principles calculations based on density functional theory (DFT) that encompass both monovalent and divalent ligands, hydrogenated defects, and vacancies. We find that the edge metallic states are preserved under a variety of chemical environments, while bulk conducting channels can be easily destroyed by either hydrogenation or ion or electron beams, resulting in devices that can exhibit spin conductance polarization close to unity.

Tin dioxide (SnO(2)) nanowires exhibit a strong visible photoluminescence that is not observed in bulk crystalline SnO(2). To explain such effect, oxygen vacancies are often invoked without clarifying if they represent the direct origin of luminescence or if their presence triggers other radiative processes. Here we report an investigation of the nature of the visible light emission in SnO(2) nanowires, showing that both experimental and theoretical ab initio analyses support the first hypothesis. On the basis of photoluminescence quenching analysis and of first-principles calculations we show that surface bridging oxygen vacancies in SnO(2) lead to formation of occupied and empty surface bands whose transition energies are in strong agreement with luminescence features and whose luminescence activity can be switched off by surface adsorption of oxidizing molecules. Finally, we discuss how such findings may explain the decoupling between "electrical-active" and "optical-active" states in SnO(2) gas nanosensors [G. Faglia et al., Appl. Phys. Lett. 86, 011923 (2005)].

Total energy calculations within the Density Functional Theory have been carried out in order to investigate the structural, electronic, and optical properties of un-doped and doped silicon nanostructures of different size and different surface terminations. In particular the effects induced by the creation of an electron-hole pair on the properties of hydrogenated silicon nanoclusters as a function of dimension are discussed in detail showing the strong interplay between the structural and optical properties of the system. The distortion induced on the structure by an electronic excitation of the cluster is analyzed and considered in the evaluation of the Stokes shift between absorption and emission energies. Besides we show how many-body effects crucially modify the absorption and emission spectra of the silicon nanocrystals. Starting from the hydrogenated clusters, different Si/O bonding at the cluster surface have been considered. We found that the presence of a Si--O--Si bridge bond originates significative excitonic luminescence features in the near-visible range. Concerning the doping, we consider B and P single- and co-doped Si nanoclusters. The neutral impurities formation energies are calculated and their dependence on the impurity position within the nanocrystal is discussed. In the case of co-doping the formation energy is strongly reduced, favoring this process with respect to the single doping. Moreover the band gap and the optical threshold are clearly red-shifted with respect to that of the pure crystals showing the possibility of an impurity based engineering of the absorption and luminescence properties of Si nanocrystals.

By combining ab initio all-electron localized orbital and pseudopotential plane-wave approaches we report on calculations of the electron affinity (EA) and the ionization potential (IP) of (5, 5) and (7, 0) single-wall carbon nanotubes. The role played by finite-size effects and nanotube termination has been analysed by comparing several hydrogen-passivated and not passivated nanotube segments. The dependence of the EA and IP on both the quantum confinement effect, due to the nanotube finite length, and the charge accumulation on the edges, is studied in detail. Also, the EA and IP are compared to the energies of the lowest unoccupied and highest occupied states, respectively, upon increasing the nanotube length. We report a slow convergence with respect to the number of atoms. The effect of nanotube packing in arrays on the electronic properties is eventually elucidated as a function of the intertube distance.

We investigate the effects of constraining the motion of atoms in finite slabs used to simulate the rutile TiO2 (110) surface in first-principles calculations. We show that an appropriate choice of fixing atoms in a slab eliminates spurious effects due to the finite size of the slabs, leading to a considerable improvement in the simulation of the (110) surface. The method thus allows for a systematic improvement in convergence in calculating both geometrical and electronic properties. The advantages of this approach are illustrated by presenting the first theoretical results on the displacement of the surface atoms in agreement with experiment.

The adsorption of 1-amino-3-cyclopentene on the (100) silicon surface has been studied by methods rooted in the density-functional theory using both delocalized (plane waves, PWs) and localized (Gaussian-type orbitals, GTOs) basis functions. The results obtained by modeling the surface by silicon clusters of different sizes are quite similar, thus confirming that the reaction is quite localized. Furthermore, PW and GTO computations give comparable results, provided that the same density functional and carefully chosen computational parameters (contraction of GTO, pseudopotentials, etc.) are used. Slab computations performed in the PW framework show that the cluster results are retrieved when low-coverage adsorption on the surface is considered. On these grounds, we are quite confident that reaction parameters obtained by the more reliable hybrid density functional (PBE0) are essentially converged, our best estimates of reaction and activation free energies are thus -40 and 6 kcal/mol, respectively.

In order to compare the extent of the elicited vasoconstrictive and vasodilative response at the microcirculatory level in essential hypertension (EH), we measured the skin blood flow by means of a laser Doppler flowmeter (LDF). Thirty-four mild-to-moderate EH patients were enrolled. Twenty-two sex- and age-matched healthy subjects were selected as a control group. The LDF measurements were carried out with the probe over the fingertip of the distal phalanx at baseline conditions (Rest flow, RF), after an ischaemic test (post-ischaemic peak flow) and during an arithmetic stress test (AT). The flow was expressed in arbitrary units. The data were processed using the Perisoft computer program. The relative flows after the ischaemic test (Rel F1) and during the AT (Rel F2) were expressed as a percentage of the previous RF values (RF1 and RF2, respectively). During the AT, the lag time was calculated (in seconds). As compared to the control subjects, RF was significantly lower in the EH group (p < 0.01). During the AT, the EH patients showed a statistically lower mean Rel F2 decrease compared to the control subjects (p < 0.01). No statistically significant difference occurred in the Rel F1 and lag time. These data suggest that the vasoconstrictive capacity of the precapillary vessels is impaired in patients with hypertension.