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Chalcogenide-based phase change memory (PCM) is a key enabling technology for optical data storage and electrical nonvolatile memory. Here, we report a new phase change chalcogenide consisting of a...

The photocatalyst β-TaON is of interest due to promising properties, such as stability, suitable band gap for visible light, and carrier mobility. We implemented a combinatorial, material discovery...

Intermixing of atomic species at the electrode-electrolyte boundaries can impact the properties of the interfaces in solid-state batteries. Herein, this work uses first-principles statistical mechanics along with experimental characterization to understand intermixing at the electrode-electrolyte interface. For the model presented in this work, lithium manganese oxide (LiMn

High-voltage lithium-ion cathode materials exhibit exceptional energy densities; however, rapid capacity fade during cell cycling prohibits their widespread utilization. Surface modification of cathode-active materials by organic self-assembled monolayers (SAMs) has emerged as an approach to improve the longevity of high-voltage electrodes; however, the surface chemistry at the electrode/electrolyte interphase and its dependence on monolayer structure remains unclear. Herein, we investigate the interplay between monolayer structure, electrochemical performance, and surface chemistry of high-voltage LiMn1.5Ni0.5O4 (LMNO) electrodes by the application of silane-based SAMs of variable length and chemical composition. We demonstrate that the application of both hydrophobic and hydrophilic monolayers results in improved galvanostatic capacity retention relative to unmodified LMNO. The extent of this improvement is tied to the structure of the monolayer with fluorinated alkyl-silanes exhibiting the greatest overall capacity retention, above 96% after 100 charge/discharge cycles. Postmortem surface analysis reveals that the presence of the monolayer enhances the deposition of LiF at the electrode surface during cell cycling and that the total surface concentration correlates with the overall improvements in capacity retention. We propose that the enhanced deposition of highly insulating LiF increases the anodic stability of the interphase, contributing to the improved galvanostatic performance of modified electrodes. Moreover, this work demonstrates that the modification of the electrode surface by the selection of an appropriate monolayer is an effective approach to tune the properties and behavior of the electrode/electrolyte interphase formed during battery operation.

Oxide conversion reactions are known to have substantially higher specific capacities than intercalation materials used in Li-ion batteries, but universally suffer from large overpotentials associated with the formation of interfaces between the resulting nanoscale metal and Li2O products. Here we use the interfacial sensitivity of operando X-ray reflectivity to visualize the structural evolution of ultrathin NiO electrodes and their interfaces during conversion. We observe two additional reactions prior to the well-known bulk, three-dimensional conversion occurring at 0.6 V: an accumulation of lithium at the buried metal/oxide interface (at 2.2 V) followed by interfacial lithiation of the buried NiO/Ni interface at the theoretical potential for conversion (at 1.9 V). To understand the mechanisms for bulk and interfacial lithiation, we calculate interfacial energies using density functional theory to build a potential-dependent nucleation model for conversion. These calculations show that the additional space charge layer of lithium is a crucial component for reducing energy barriers for conversion in NiO.

Solution-phase growth of amorphous oxide semiconducting films will likely provide significant advances toward the realization of affordable, flexible, transparent electronics. However, solution pro...

Observations of the initial lithiation of NiO electrodes demonstrate how to seed conversion reactions using interfaces in a thin film Ni/NiO bilayer architecture. Operando X-ray reflectivity (XRR) reveals that structural changes in a NiO film begin at potentials near the theoretical reduction potential (1.8-2.0 V) with detectable lithiation of both the buried Ni/NiO interface and the outer NiO surface that occur prior to the reaction of the NiO film. This initial conversion reaction is most pronounced in ultrathin NiO films (∼20 Å) with only small changes to the NiO film surface for thicker films (∼67 Å). The limited reactivity of thicker NiO films probed using operando grazing incidence small-angle X-ray scattering (GISAXS) shows the growth of nanoparticles at the electrode/electrolyte interface during initial lithium ion insertion, with a 16-20 Å average radius. Ex situ X-ray photoelectron spectroscopy (XPS), time-of-flight secondary ion mass spectrometry (ToF-SIMS), and scanning transmission electron microscopy/electron energy loss spectroscopy (STEM/EELS) confirm our conclusions about the morphological changes accompanying initial stage of lithiation in these conversion reaction electrodes. The present study reveals the interconnected challenges of solid-solid transitions, overpotentials, interfacial nucleation and kinetics, and transition metal dissolution in conversion-type electrodes that are critical for their use as electrodes in lithium-ion batteries.

Chalcogenide-based phase change memory (PCM) is a key enabling technology for optical data storage and electrical nonvolatile memory. Here, we report a new phase change chalcogenide consisting of a 3D network of ionic (K···Se) and covalent bonds (Bi-Se), K

Amorphous (a-) oxides form an important category of transparent conducting/semiconducting thin films used as electrodes and channel layers in thin film transistors. The compositional flexibility of amorphous states, through doping, makes it possible to fine-tune the electrical properties of films from conducting to semiconducting. However, surface chemistry and stability of these films are rarely addressed. Surface studies of amorphous materials, in general, are scarce due to disorder. Here, long-term surface stability of a–Zn–Sn–O films was investigated using grazing incidence X-ray absorption spectroscopy techniques. We present a detailed description of film surface structures and their evolution over time. It was found that the surface structure is, locally, a close analogue of the crystalline counterpart and that surface chemistry is governed by vacancies, strain, composition, and film density. It is shown that the long-term stability of a film is questionable when the film has a high Zn content and a...

The phase-change (PC) materials in the majority of optical data storage media in use today exhibit a fast, reversible crystal → amorphous phase transition that allows them to be switched between on (1) and off (0) binary states. Solid-state inorganic materials with this property are relatively common, but those exhibiting an amorphous → amorphous transition called polyamorphism are exceptionally rare. K2Sb8Se13 (KSS) reported here is the first example of a material that has both amorphous → amorphous polyamorphic transition and amorphous → crystal transition at easily accessible temperatures (227 and 263 °C, respectively). The transitions are associated with the atomic coordinative preferences of the atoms, and all three states of K2Sb8Se13 are stable in air at 25 °C and 1 atm. All three states of K2Sb8Se13 exhibit distinct optical bandgaps, Eg = 1.25, 1.0, and 0.74 eV, for the amorphous-II, amorphous-I, and crystalline versions, respectively. The room-temperature electrical conductivity increases by more than 2 orders of magnitude from amorphous-I to -II and by another 2 orders of magnitude from amorphous-II to the crystalline state. This extraordinary behavior suggests that a new class of materials exist which could provide multistate level systems to enable higher-order computing logic circuits, reconfigurable logic devices, and optical switches.

Epitaxial LiMn2O4 (LMO)/La0.5Sr0.5CoO3 (LSCO) bilayer thin films were grown on single crystalline SrTiO3 (STO) (111) substrates as model lithium ion battery cathodes. The LSCO layer was used as an electrically conducting buffer layer for electrochemical testing. The LMO and LSCO layers were both epitaxial, with sub-nano flat LMO/LSCO interfaces as seen by X-ray diffraction, synchrotron X-ray scattering, and high-resolution transmission electron microscopy (HRTEM), but with a large LMO surface roughness due to the relatively large lattice mismatch with LSCO. Three-dimensional islands and depressions were formed on the strain-relaxed LMO layer, and misfit dislocations at the LMO/LSCO interface were discerned through HRTEM imaging, suggesting a Stranski–Krastanov (SK) mode thin-film growth. A crystalline structural change from cubic spinel at the LMO surface and interior to tetragonal oxygen-deficient LMO at the LMO/LSCO interface was examined. Electrochemical tests along with in situ synchrotron X-ray scatt...

The crystallization kinetics of Zn0.3In1.4Sn0.3O3 (ZITO-30) thin films is investigated via isothermal in situ transmission electron microscopy measurements. Extensive analysis is conducted to reveal the nucleation mechanism and growth rate at four different temperatures. The results show that the nucleation rate in this system is time-dependent and continuously decelerates following a power law decay. The crystal growth rate is constant at a given temperature, and interface-limited growth is the controlling mechanism in the kinetics of amorphous ZITO-30 crystallization. The activation energy for the overall process and interface growth are derived from the experimental data. A morphological study of the grains shows that the {100} interfaces have low mobility and are responsible for the anisotropic crystal shapes. It is found that the {111} and {100} planes of the crystal form parallel to the film–vapor interface during the nucleation process. The results demonstrate a rather complex yet tractable correla...

High-voltage lithium-ion cathode materials exhibit exceptional energy densities; however, rapid capacity fade during cell cycling prohibits their widespread utilization. Surface modification of cathode-active materials by organic self-assembled monolayers (SAMs) has emerged as an approach to improve the longevity of high-voltage electrodes; however, the surface chemistry at the electrode/electrolyte interphase and its dependence on monolayer structure remains unclear. Herein, we investigate the interplay between monolayer structure, electrochemical performance, and surface chemistry of high-voltage LiMn

The cross-plane thermal conductivity of InGaZnO (IGZO) thin films was measured using the 3ω technique from 18 to 300 K. The studied morphologies include amorphous (a-IGZO), semicrystalline (semi-c-IGZO), and c-axis-aligned single-crystal-like IGZO (c-IGZO) grown by pulsed laser deposition (PLD) as well as a-IGZO deposited by sputtering and by solution combustion processing. The atomic structures of the amorphous and crystalline films were simulated with ab initio molecular dynamics. The film quality and texturing information was assessed by X-ray diffraction and grazing incidence wide-angle X-ray scattering. X-ray reflectivity was also conducted to quantify film densities and porosities. All the high-density films exhibit an empirical power-law temperature dependence of the thermal conductivity κ ∼ T0.6 in the specified temperature range. Among the PLD dense films, semi-c-IGZO exhibits the highest thermal conductivity, remarkably exceeding both films with more order (c-IGZO) and with less order (a-IGZO) b...

The cross-plane thermal conductivities of InGaZnO (IGZO) thin films in different morphologies were measured on three occasions within 19 months, using the 3ω method at room temperature 300 K. Amorphous (a-), semi-crystalline (semi-c-) and crystalline (c-) IGZO films were grown by pulsed laser deposition (PLD), followed by X-ray diffraction (XRD) for evaluation of film quality and crystallinity. Semi-c-IGZO shows the highest thermal conductivity, even higher than the most ordered crystal-like phase. After being stored in dry low-oxygen environment for months, a drastic decrease of semi-c-IGZO thermal conductivity was observed, while the thermal conductivity slightly reduced in c-IGZO and remained unchanged in a-IGZO. This change in thermal conductivity with storage time can be attributed to film structural relaxation and vacancy diffusion to grain boundaries.

Larger mirrors are needed to satisfy the requirements of the next generation of UV–Vis space telescopes. Our study attempts to meet this requirement by demonstrating a technology that would deploy a large, continuous, high figure accuracy membrane mirror. The figure of the membrane mirror is corrected after deployment using a contiguous coating of a magnetic smart material (MSM) and a magnetic field. The MSM is a magnetostrictive material that is operable by magnetic write head(s), locally imposed on the nonreflective side of the membrane mirror. We report preparation, figure accuracy, stress analysis, and stability of the MSM coated CP1 polyimide substrate membrane mirror. The figure accuracy and magnetostrictive performance of the MSM coated membrane mirror are measured; furthermore, stability of the CP1 membrane for 48 h is observed and the results are found to be promising. In addition to membrane coating and the experimental procedure, the results of the surface profiling experiments are introduced and discussed.

The phase-change (PC) materials in the majority of optical data storage media in use today exhibit a fast, reversible crystal → amorphous phase transition that allows them to be switched between on (1) and off (0) binary states. Solid-state inorganic materials with this property are relatively common, but those exhibiting an amorphous → amorphous transition called polyamorphism are exceptionally rare. K

Amorphous metal oxides (AMOs) are important candidate materials for fabricating next-generation thin-film transistors. While much attention has been directed toward the synthesis and electrical properties of AMOs, less is known about growth conditions that allow AMOs to retain their desirable amorphous state when subjected to high operating temperatures. Using in situ x-ray scattering and level-set simulations, we explore the time evolution of the crystallization process for a set of amorphous $\mathrm{I}{\mathrm{n}}_{2}{\mathrm{O}}_{3}$ thin films synthesized by pulsed-laser deposition at deposition temperatures (${T}_{d}$) of \ensuremath{-}50, \ensuremath{-}25, and 0 \ifmmode^\circ\else\textdegree\fi{}C. The films were annealed isothermally and the degree of crystallinity was determined by a quantitative analysis of the time-evolved x-ray scattering patterns. As expected, for films grown at the same ${T}_{d}$, an increase in the annealing temperature ${T}_{A}$ led to a shorter delay prior to the onset of crystallization, and a faster crystallization rate. Moreover, when lowering the deposition temperature by 25 \ifmmode^\circ\else\textdegree\fi{}C, a 40 \ifmmode^\circ\else\textdegree\fi{}C increase in annealing temperature is needed to achieve the same time interval for the crystals to grow from 10 to 90% volume fraction of the sample. Films grown at ${T}_{d}=0{\phantom{\rule{0.16em}{0ex}}}^{\ensuremath{\circ}}\mathrm{C}$ exhibited strong cubic texture after crystallization. A level-set method was employed to quantitatively model the texture that develops in the microstructures and to determine key parameters, such as the interface growth velocity, the nucleation density, and the activation energy. The differences observed in the crystallization processes are attributed to the changes in the atomic structure of the oxide and possible nanocrystalline inclusions that formed during the deposition of the amorphous phase.

X-ray reflectivity and transmission electron microscopy (TEM) were used to characterize the morphological changes in thin film electrodes with alternating Ni and NiO layers during lithiation as a function of the Ni buffer layer thickness. Complete lithiation of the active NiO layers occurs only when the thickness of the Ni/NiO bilayers are less than 75 A – a threshold value that is determined by the sum of the Ni quantity in the Ni/NiO bilayer of the multilayer stack. Thicker Ni/NiO bilayers present a kinetic barrier for lithium ion diffusion inside the stack resulting in partial lithiation of the multilayer electrodes in which only the top NiO layer lithiates. Lithiation of NiO layers in a multilayer stack also leads to an interface-specific reaction that is observed to increase the thicknesses of adjacent Ni layers by 3–4 A and is associated with the formation of a low-density Li2O layer, corresponding to an interfacially-driven phase separation of the NiO. Rate dependent cyclic voltammetry studies reveal a linear relation between the peak current and scan rate suggesting that the lithiation kinetics are controlled by charge transfer resistance at the liquid–solid interface.

A series of In2O3 thin films, ranging from X-ray diffraction amorphous to highly crystalline, were grown on amorphous silica substrates using pulsed laser deposition by varying the film growth temperature. The amorphous-to-crystalline transition and the structure of amorphous In2O3 were investigated by grazing angle X-ray diffraction (GIXRD), Hall transport measurement, high resolution transmission electron microscopy (HRTEM), electron diffraction, extended X-ray absorption fine structure (EXAFS), and ab initio molecular dynamics (MD) liquid-quench simulation. On the basis of excellent agreement between the EXAFS and MD results, a model of the amorphous oxide structure as a network of InO x polyhedra was constructed. Mechanisms for the transport properties observed in the crystalline, amorphous-to-crystalline, and amorphous deposition regions are presented, highlighting a unique structure-property relationship.

In this article, we report the design, fabrication, characterization, and simulation of three-dimensional (3D) dye-sensitized solar cells (DSSCs), using ordered indium-tin-oxide (ITO) nanorod (NR) arrays as the photoanode, and compare them with conventional planar (2D) DSSCs. The ITO NR array used in the 3D cell greatly improves its performance by providing shorter electron pathways and reducing the recombination rate of the photogenerated electrons. We observed a 10-20% enhancement of the energy conversion efficiency, primarily due to an increased short circuit current. This finding supports the concept of using 3D photoanodes with optically transparent and conducting nanorods for the enhancement of the energy-harvesting devices that require short charge collection distance without sacrificing the optical thickness. Thus, unlike the conventional solar cell structure, the functions for photon collection and charge transport are decoupled to allow for improved cell designs.

The salient feature of a supercapacitor is its ability to deliver much higher power density than a battery. A hierarchical design and a cost-effective approach to fabricate high performance supercapacitors using functional carbon nano-particles is reported. A special arc synthesis method is used to produce amorphous/crystalline composite with nitrogen and boron co-doped high charge density carbon nanoparticles. Upon etch removal of the amorphous phase in the composite nanoparticle, a crystalline carbon framework emerges, consisting of a mixture of nano-graphitic sheets mostly in the middle and single nanohorns distributed around the surface of the nanoparticle. These nanoparticles have large internal/external surfaces with subnano channels and sharp nano-tips for high speed charge transport and local charge accumulation. To deliver high power density, the internal resistance of the device is reduced by assembling the nanoparticles via electro-spraying and compacting them into dense films (without any binder) under 700 MPa of pressure before supercapacitor assembly. Taken together, the hierarchical processed supercapacitor has a very high (compared to literature values) power density of nearly 4.5 kW cm−3 and a respectable energy density of 2.45 mWh cm−3. Combining these carbon nanoparticles with large area spraying coating, it can lead to a cost-effective production of high performance supercapacitors.

We present a systematic study of light scattering from indium-tin-oxide (ITO) nanorods in the near-infrared with a special focus on the resonant coupling of plasmonic transverse mode and photonic modes in 2-D periodic arrays. Using theoretical analysis combined with simulations, a set of experiments has been designed to study such interactions. Near-field mapping from the simulations shows a strong interaction of localized surface plasmon resonances (LSPR) with a photonic resonance; together they explain the scattering phenomenon observed in our experiments carried out in the far field. We observed the shift of LSPR as the plasma frequency was varied, resulting in a modification of the spectral shape. Utilizing the high aspect ratios of the ITO nanorods, the LSPR strength can be turned on and off by the polarization of the incident light.

Despite rapid advances in conversion efficiency (>22%), the environmental stability of perovskite solar cells remains a substantial barrier to commercialization. Here, we show a significant improvement in the stability of inverted perovskite solar cells against liquid water and high operating temperature (100 °C) by integrating an ultrathin amorphous oxide electron extraction layer via atomic layer deposition (ALD). These unencapsulated inverted devices exhibit a stable operation over at least 10 h when subjected to high thermal stress (100 °C) in ambient environments, as well as upon direct contact with a droplet of water without further encapsulation.

Oxide conversion reactions in lithium ion batteries are challenged by substantial irreversibility associated with significant volume change during the phase separation of an oxide into lithia and metal species (e.g., NiO + 2Li(+) + 2e(-) → Ni + Li2O). We demonstrate that the confinement of nanometer-scale NiO layers within a Ni/NiO multilayer electrode can direct lithium transport and reactivity, leading to coherent expansion of the multilayer. The morphological changes accompanying lithiation were tracked in real-time by in-operando X-ray reflectivity (XRR) and ex-situ cross-sectional transmission electron microscopy on well-defined periodic Ni/NiO multilayers grown by pulsed-laser deposition. Comparison of pristine and lithiated structures reveals that the nm-thick nickel layers help initiate the conversion process at the interface and then provide an architecture that confines the lithiation to the individual oxide layers. XRR data reveal that the lithiation process starts at the top and progressed through the electrode stack, layer by layer resulting in a purely vertical expansion. Longer term cycling showed significant reversible capacity (∼800 mA h g(-1) after ∼100 cycles), which we attribute to a combination of the intrinsic bulk lithiation capacity of the NiO and additional interfacial lithiation capacity. These observations provide new insight into the role of metal/metal oxide interfaces in controlling lithium ion conversion reactions by defining the relationships between morphological changes and film architecture during reaction.

X-ray and ultraviolet photoelectron spectroscopy (UPS) studies were made of in situ RF magnetron-sputtered crystalline (c) and amorphous (a) Zn–In–Sn–O (ZITO) thin films, ex situ pulsed laser deposited c- and a-ZITO thin films, and bulk ZITO ceramics. Cosubstitution of Zn and Sn for In results in an increase of the In core level binding energy at a given Fermi level compared to that measured in undoped and Sn-doped In2O3 (ITO). In plots of work function vs. Fermi level, in situ c-ZITO and a-ZITO films have low ionization potentials (7.0–7.7 eV) that are similar to undoped In2O3. In contrast, dry-air-annealed in situ films, ex situ films, and bulk ceramics have higher ionization potentials (7.7–8.1 eV) that are more similar to ITO and match well with previous work on air-exposed surfaces. Kelvin Probe measurements were made of select a-ZITO films exposed to air and ultraviolet/ozone-treated so as to measure work functions under conditions commonly employed for device fabrication. Results (4.8–5.3 eV) were in good agreement with the UPS work functions of oxygen-exposed materials and with literature values. Lastly, a parallelogram plot of work function vs. Fermi level shows that a wider range of work functions is achievable in ZITO materials as compared to other transparent conducting oxides (Sb-doped SnO2, Al-doped ZnO, Sn-doped In2O3), making ZITO more versatile for applications.

Thin films of corundum-type In2 − 2xZnxSnxO3 (cor-ZITO) were grown on lattice-matched substrates using pulsed laser deposition. The (001) of the corundum-type film grew heteroepitaxial to the (001) of a LiNbO3 substrate with large grains along the in-plane and out-of-plane orientation characterized by glancing incidence X-ray diffraction and four-circle Φ-scans. A film with 34% In (metals basis) exhibited a wide optical gap of 3.9 eV and a modest conductivity of 134 S/cm, which suggests cor-ZITO is a potential low-cost transparent conducting oxide.

The functionality of NiO interfacial layers in enhancing bulk heterojunction (BHJ) organic photovoltaic (OPV) cell performance is investigated by integrated characterization of the electrical properties, microstructure, electronic structure, and optical properties of thin NiO films grown on glass/ITO electrodes. These NiO layers are found to be advantageous in BHJ OPV applications due to favorable energy band levels, interface passivation, p-type character, crystallinity, smooth surfaces, and optical transparency. The NiO overlayers are fabricated via pulsed-laser deposition and found to have a work function of ∼5.3 eV. They are investigated by both topographic and conductive atomic force microscopy and shown to passivate interfacial charge traps. The films also have an average optical transparency of >80% in the visible range, crucial for efficient OPV function, and have a near-stoichiometric Ni:O surface composition. By grazing-incidence X-ray diffraction, the NiO thin films are shown to grow preferenti...

Zinc-indium-tin oxide (ZITO) films are grown by pulsed-laser deposition in which 30% of the indium in the In(2)O(3) structure is replaced by substitution with zinc and tin in equal molar proportions: In(2-2x)Zn(x)Sn(x)O(3), where x = 0.3. Films grown at 25 and 100 degrees C exhibit electron diffraction patterns (EDPs) typical of amorphous materials. At a deposition temperature of 200 degrees C, evidence of crystallinity begins to appear in the EDP data and becomes more evident in films deposited at 400 degrees C. The advent of crystallinity affects the electrical properties of the ZITO film, and the effect is ascribed to the boundaries between phases in the films. The electrical and optical properties of the amorphous ZITO films grown at 25 degrees C are dependent on the oxygen partial pressure (P(O(2))) during film growth, transitioning from a high-mobility (36 cm(2)/V x s) conductor (sigma approximately 1700 S/cm) at P(O(2)) = 5 mTorr to a high-mobility semiconductor at P(O(2)) approximately 20 mTorr. Field-effect transistors (FETs) prepared with as-deposited amorphous ZITO channel layers on p(+)-Si/300 nm SiO(2) substrates yield FETs with on/off ratios of 10(6), off currents of 10(-8) A, and field-effect saturation mobilities of 10 cm(2)/V x s.

Modification of the electrical properties of individual single-crystalline ZnO nanowire devices by a pulsed-laser deposition of a thin insulating Al2O3 layer is reported. Through the reduction of O2− ion concentration on the nanowire surface by the Al2O3 layer, the electron concentration in the nanowire is increased and, as a result, the current of the nanodevice enhanced. The degree to which the conductivity of the device increased is related to the ratio of Zn to O in the nanowire, and the ratio in turn is related to the growth temperature of the ZnO nanowires. The percentage change in electrical behavior of the nanodevice fabricated from ZnO nanowires grown in a lower temperature zone with a greater Zn to O ratio was less.

Electrical studies of the Zn, Sn codoped bixbyite (In-3O 3 ) phase (ZITO), a promising alternative to indium-tin oxide (ITO) for transparent conductor applications, indicate that an inherent cation off-stoichiometry in favor of Sn donors versus Zn acceptors dominates the defect chemistry of this important transparent conducting oxide. This was shown by bulk phase diagram and conductivity studies, thin-film electrical/optical measurements, and photoelectron spectroscopy on both bulk and thin-film specimens. The Sn-excess character explains the persistent n-type behavior of bulk ZITO, the relative redox insensitivity of codoped compositions, the existence of "special" (optimized conductivity) compositions in phase space for pulsed laser-deposited films, and the propensity for surface chemical depletion in both bulk and thin-film specimens.

The proliferation of high-bandwidth applications such as high-speed Internet access and telecommuting has created among network providers a growing interest in upgrading their networks to deliver broadband services to homes and small businesses. This paper describes broadband fiber access (BFA), a fiber-to-the-customer access architecture based on Lucent Technologies' broadband AnyMedia™ interface platform (AIP). The BFA architecture provides asynchronous transfer mode (ATM) connection to customer premises equipment (CPE) and supports full quality-of-service (QoS) and traffic management functions defined by the ATM Forum. The BFA line card, or application pack (AP), is designed to support the concentration of traffic from CPE at the OC-3c/STM-1 rate (155.52 Mb/s). It supports the use of single-fiber drop to CPE using bidirectional coarse wavelength division multiplexing (CWDM). A hardware-based flow-control mechanism, which is applied to low-priority traffic originated from the CPE, allows for fast response to congestion at the feeder multiplexer. This fast response to congestion allows fair and efficient utilization of the feeder bandwidth.

This study explores the unique role of Ga in amorphous (a-) InGaO oxide semiconductors through combined theory and experiment. It reveals substitutional effects that have not previously been attributed to Ga, and that are investigated by examining how Ga influences structure–property relationships in a series of pulsed laser deposited a-InGaO thin films. Element-specific structural studies (X-ray absorption and anomalous scattering) show good agreement with the results of ab initio molecular dynamics simulations. This structural knowledge is used to understand the results of air-annealing and Hall effect electrical measurements. The crystallization temperature of a-IO is shown to increase by as much as 325 °C on substituting Ga for In. This increased thermal stability is understood on the basis of the large changes in local structure that Ga undergoes, as compared to In, during crystallization. Hall measurements reveal an initial sharp drop in both carrier concentration and mobility with increasing Ga incorporation, which moderates at >20 at% Ga content. This decline in both the carrier concentration and mobility with increasing Ga is attributed to dilution of the charge-carrying InO matrix and to increased structural disorder. The latter effect saturates at high at% Ga.

Amorphous oxide semiconductors (AOSs)—ternary or quaternary oxides of post-transition metals such as In-Sn-O, Zn-Sn-O, or In-Ga-Zn-O—have been known for a decade and have attracted a great deal of attention as they possess several technological advantages, including low-temperature large-area deposition, mechanical flexibility, smooth surfaces, and high carrier mobility that is an order of magnitude larger than that of amorphous silicon (a-Si:H). Compared to their crystalline counterparts, the structure of AOSs is extremely sensitive to deposition conditions, stoichiometry, and composition, giving rise to a wide range of tunable optical and electrical properties. The large parameter space and the resulting complex deposition–structure–property relationships in AOSs make the currently available theoretical and experimental research data rather scattered and the design of new materials difficult. In this work, the key properties of several In-based AOSs are studied as a function of cooling rates, oxygen stoichiometry, cation composition, or lattice strain. Based on a thorough comparison of the results of ab initio modeling, comprehensive structural analysis, accurate property calculations, and systematic experimental measurements, a four-dimensional parameter space for AOSs is derived, serving as a solid foundation for property optimization in known AOSs and for design of next-generation transparent amorphous semiconductors.

We report our recent development in pursuing high Quality-Factor (high-Q factor) plasmonic resonances, with vertically aligned two dimensional (2-D) periodic nanorod arrays. The 2-D vertically aligned nano-antenna array can have high-Q resonances varying arbitrarily from near infrared to terahertz regime, as the antenna resonances of the nanorod are highly tunable through material properties, the length of the nanorod, and the orthogonal polarization direction with respect to the lattice surface,. The high-Q in combination with the small optical mode volume gives a very high Purcell factor, which could potentially be applied to various enhanced nonlinear photonics or optoelectronic devices. The 'hot spots' around the nanorods can be easily harvested as no index-matching is necessary. The resonances maintain their high-Q factor with the change of the environmental refractive index, which is of great interest for molecular sensing., Comment: 8 pages, appears in Proc. SPIE 9163, Plasmonics: Metallic Nanostructures and Their Optical Properties XII, 91630R (September 10, 2014)

Light-matter interaction at the nanoscale is of particular interest for future photonic integrated circuits and devices with applications ranging from communication to sensing and imaging. In this Letter a combination of transient absorption (TA) and the use of third harmonic generation as a probe (THG-probe) has been adopted to investigate the response of the localized surface plasmon resonances (LSPRs) of vertically aligned indium tin oxide rods (ITORs) upon ultraviolet light (UV) excitation. TA experiments, which are sensitive to the extinction of the LSPR, show a fluence-dependent increase in the frequency and intensity of the LSPR. The THG-probe experiments show a fluence-dependent decrease of the LSPR-enhanced local electric field intensity within the rod, consistent with a shift of the LSPR to higher frequency. The kinetics from both TA and THG-probe experiments are found to be independent of the fluence of the pump. These results indicate that UV excitation modulates the plasma frequency of ITO on the ultrafast time scale by the injection of electrons into, and their subsequent decay from, the conduction band of the rods. Increases to the electron concentration in the conduction band of ∼13% were achieved in these experiments. Computer simulation and modeling have been used throughout the investigation to guide the design of the experiments and to map the electric field distribution around the rods for interpreting far-field measurement results.

A modular time division multiplexer (MTDM) device is introduced to enable parallel measurement of multiple samples with both fast and slow decay transients spanning from millisecond to month-long time scales. This is achieved by dedicating a single high-speed measurement instrument for rapid data collection at the start of a transient, and by multiplexing a second low-speed measurement instrument for slow data collection of several samples in parallel for the later transients. The MTDM is a high-level design concept that can in principle measure an arbitrary number of samples, and the low cost implementation here allows up to 16 samples to be measured in parallel over several months, reducing the total ensemble measurement duration and equipment usage by as much as an order of magnitude without sacrificing fidelity. The MTDM was successfully demonstrated by simultaneously measuring the photoconductivity of three amorphous indium-gallium-zinc-oxide thin films with 20 ms data resolution for fast transients and an uninterrupted parallel run time of over 20 days. The MTDM has potential applications in many areas of research that manifest response times spanning many orders of magnitude, such as photovoltaics, rechargeable batteries, amorphous semiconductors such as silicon and amorphous indium-gallium-zinc-oxide.

Pulsed organometallic beam epitaxy is a new technique for the deposition of complex metal oxide films. With this technique each metal precursor species is sequentially pulsed onto the substrate. The flux of the precursor is monitored and computer feedback control is used to adjust the size of each precursor pulse, allowing precise control of the metal stoichiometry. Smooth films of YBa 2 Cu 3 O 7−δ , as examined by SEM, can be made with this technique in a temperature range that includes 640–680 °C using the β-diketonate precursors, Y(dipivalolymethanate) 3 , Ba(hexafluoroacetylacetonate) 2 -tetraglyme, and Cu(acetylacetonate) 2 . The morphology of the films is dependent on the ratio of the three precursors delivered to the substrate. The ratio of the three precursors must be held to better than +-10% in order to produce smooth films. The ratio between the three precursors needed to produce a smooth film changes with the deposition temperature. The relative amount of yttrium precursor delivered to the substrate must be decreased as the temperature is increased in order to maintain a smooth film. The metal composition of the smooth films is Y 1 Ba 2 Cu 3 (±4%).