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The rapid thermal annealing (RTA) effects on step-graded InAlAs buffer layer and In(sub 0.52)Al(sub 0.48)As/In(sub 0.53)Ga(sub 0.47)As metamorphic high electron mobility transistor (MM-HEMT) structures are reported. The results indicate that the crystal quality of MM-HEMT structures was improved in the annealing temperature range of 500-650 degree C and the crystal quality of MM-HEMT became poor in the annealing temperature range 700-800 degree C.

Seedlings (70-d-old) of two tall fescue (Festuca arundinacea Schreb.) genotypes, heat-tolerant Jaguar 3 and heat-sensitive TF 66, were exposed to a high temperature stress of 35/30 °C (day/night) for 20 d and both light-saturated and CO2-saturated leaf stomatal conductance decreased, especially in TF 66. Higher reductions of quantum efficiency, carboxylation efficiency and maximum photochemical efficiency of photosystem 2 in dark adapted leaves (measured as Fv/Fm) occurred in TF 66 than in Jaguar 3. High temperature stress increased photorespiration in the two plants, but more in TF 66. Moreover, high temperature stress also reduced the growth, chlorophyll content and caused cell membrane injuries in the two cultivars, the changes were again more pronounced in TF 66 than in Jaguar 3. [ABSTRACT FROM AUTHOR]

Abstract: A series of 1-μm-thick undoped In0.53Ga0.47As with different substrate growth temperature (T g) or different beam flux pressure (BFP) of As were grown on lattice-matched semi-insulating InP (001) substrates by molecular beam epitaxy (MBE). Van der Pauw Hall measurements were carried out for these In0.53Ga0.47As samples. The residual electron concentration decreased with increasing temperature from 77 to 140K, but increased with increasing temperature from 140 to 300K. Rapid thermal annealing (RTA) can reduce the residual electron concentration. The residual electron mobility increased with increasing temperature from 77 to 300K. All these electrical properties are associated with As antisite defects. [Copyright &y& Elsevier]

Highlights: [•] This paper reported superconducting properties of the powder-in-tube Nb3Al wires. [•] The Nb3Al wires were made by using Nb(Al)ss supersaturated solid solution powders. [•] The Cu-matrix Nb3Al superconducting wires have been successfully fabricated. [•] The transport J c of Nb3Al wires at 4.2K, 10T is up to 12,700A/cm2. [Copyright &y& Elsevier]