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Combining graphene with transition metal dichalcogenides (TMDs) leads to enhanced spin-orbit coupling (SOC) in the graphene. The induced SOC has a large effect on the low-energy part of the band structure leading to or stabilizing novel phases such as topological phases or superconductivity. Here, the pressure dependence of the SOC strength is investigated in bilayer graphene/WSe$_2$ heterostructures. We performed magnetoconductance studies, such as weak localization, quantum Hall, and Shubnikov-de Haas oscillation measurements to extract the different SOC terms which determine the low-energy band structure of BLG. We find a significant increase of the SOC strengths as a result of the pressure. Our studies highlight the large tunability of SOC coupling strength with pressure, which is important for correlated phases or spin qubits in BLG/WSe$_2$ heterostructures.

Topological superconductors (SCs) hold great promise for fault-tolerant quantum hardware, however, their experimental realization is very challenging. Recently, superconducting artificial molecules (Andreev molecules) have opened new avenues to engineer topological superconducting materials. In this work, we demonstrate a heteroatomic Andreev molecule, where two normal artificial atoms realized by quantum dots (QDs) are coupled by a superconducting island (SCI). We show that the two normal atoms strongly hybridize and form a 3-electron-based molecular state. Our density matrix renormalization group (DMRG) calculations explain quantitatively the robust binding of electrons. The tunability of the structure allows us to drive a quantum phase transition from an antiferromagnetic Andreev molecular state to a heteroatomic Andreev molecule with ferromagnetically coupled QDs using simple electrical gating.

Semiconductor-superconductor hybrid nanocircuits are of high interest due to their potential applications in quantum computing. Semiconductors with a strong spin-orbit coupling and large $g$-factor are particularly attractive since they are the basic building blocks of novel qubit architectures. However, for the engineering of these complex circuits, the building blocks must be characterized in detail. We have investigated a Josephson junction where the weak link is a two-dimensional electron gas (2DEG) hosted in an InAs/InGaAs heterostructure grown on a GaAs substrate. We employed the in-situ epitaxially grown Al layer as superconducting contacts to form an rf SQUID, and also to create a microwave resonator for sensing the Josephson inductance. We determined the gate-dependent current-phase relation, and observed supercurrent interference in out-of-plane magnetic fields. With the application of an in-plane magnetic field, we induced asymmetry in the interference pattern, which was found to be anisotropic in the device plane.

We experimentally investigate the electronic transport properties of a three-terminal graphene Josephson junction. We find that self-heating effects strongly influence the behaviour of this multiterminal Josephson junction (MTJJ) system. We show that existing simulation methods based on resistively and capacitively shunted Josephson junction networks can be significantly improved by taking into account these heating effects. We also investigate the phase dynamics in our MTJJ by measuring its switching current distribution and find correlated switching events in different junctions. We show that the switching dynamics is governed by phase diffusion at low temperatures. Furthermore, we find that self-heating introduces additional damping which results in overdamped I-V characteristics when normal and supercurrents coexist in the device.

The observation of the gate-controlled supercurrent (GCS) effect in superconducting nanostructures increased the hopes for realizing a superconducting equivalent of semiconductor field-effect transistors. However, recent works attribute this effect to various leakage-based scenarios, giving rise to a debate on its origin. A proper understanding of the microscopic process underlying the GCS effect and the relevant time scales would be beneficial to evaluate the possible applications. In this work, we observed gate-induced two-level fluctuations between the superconducting state and normal state in Al/InAs nanowires (NWs). Noise correlation measurements show a strong correlation with leakage current fluctuations. The time-domain measurements show that these fluctuations have Poissonian statistics. Our detailed analysis of the leakage current measurements reveals that it is consistent with the stress-induced leakage current (SILC), in which inelastic tunneling with phonon generation is the predominant transport mechanism. Our findings shed light on the microscopic origin of the GCS effect and give deeper insight into the switching dynamics of the superconducting NW under the influence of the strong gate voltage.

The layered van der Waals material ZrTe$_5$ is known as a candidate topological insulator (TI), however its topological phase and the relation with other properties such as an apparent Dirac semimetallic state is still a subject of debate. We employ a semiclassical multicarrier transport (MCT) model to analyze the magnetotransport of ZrTe$_5$ nanodevices at hydrostatic pressures up to 2 GPa. The temperature dependence of the MCT results between 10 and 300 K is assessed in the context of thermal activation, and we obtain the positions of conduction and valence band edges in the vicinity of the chemical potential. We find evidence of the closing and re-opening of the band gap with increasing pressure, which is consistent with a phase transition from weak to strong TI. This matches expectations from ab initio band structure calculations, as well as previous observations that CVT-grown ZrTe$_5$ is a weak TI in ambient conditions., Comment: Main Text: 11 pages, 5 figures; Supporting Information: 13 pages, 9 figures

The control of a superconducting current via the application of a gate voltage has been recently demonstrated in a variety of superconducting devices. Although the mechanism underlying this gate-controlled supercurrent (GCS) effect remains under debate, the GCS effect has raised great interest for the development of the superconducting equivalent of conventional metaloxide semiconductor electronics. To date, however, the GCS effect has been mostly observed in superconducting devices made by additive patterning. Here, we show that devices made by subtractive patterning show a systematic absence of the GCS effect. Doing a microstructural analysis of these devices and comparing them to devices made by additive patterning, where we observe a GCS, we identify some material and physical parameters that are crucial for the observation of a GCS. We also show that some of the mechanisms proposed to explain the origin of the GCS effect are not universally relevant., Comment: 19 pages, 3 figures. arXiv admin note: substantial text overlap with arXiv:2302.13734

Multiple systems hosting Andreev molecular states have been proposed and studied, consisting of closely spaced Josephson junctions modeled as ballistic channels. We show that replacing the ballistic channels in the weak link of the Josephson junctions with quantum dots (QD), leads to a very exciting, rich phase diagram. It shows a strong nonlocal Josephson effect: as one junction is tuned the current-phase relation of the other junction is modified. This architecture hosts $0 - \pi$ transitions and shows a tunable anomalous phase-shift $\phi_0$ , nonlocally controlled in both cases, without relying on spin-orbit interaction or Zeeman fields. In addition significant superconducting diode effect can also be observed. The presented non-local current-phase relation can be used as a signature of the formation of an Andreev molecular state, as well as to introduce new ways to tune quantum architectures.

Bilayer graphene (BLG) was recently shown to host a band-inverted phase with unconventional topology emerging from the Ising-type spin--orbit interaction (SOI) induced by the proximity of transition metal dichalcogenides with large intrinsic SOI. Here, we report the stabilization of this band-inverted phase in BLG symmetrically encapsulated in tungsten-diselenide (WSe$_2$) via hydrostatic pressure. Our observations from low temperature transport measurements are consistent with a single particle model with induced Ising SOI of opposite sign on the two graphene layers. To confirm the strengthening of the inverted phase, we present thermal activation measurements and show that the SOI-induced band gap increases by more than 100% due to the applied pressure. Finally, the investigation of Landau level spectra reveals the dependence of the level-crossings on the applied magnetic field, which further confirms the enhancement of SOI with pressure.

In conventional metal-oxide semiconductor (CMOS) electronics, the logic state of a device is set by a gate voltage (VG). The superconducting equivalent of such effect had remained unknown until it was recently shown that a VG can tune the superconducting current (supercurrent) flowing through a nanoconstriction in a superconductor. This gate-controlled supercurrent (GCS) effect can lead to superconducting logics like CMOS logics, but with lower energy dissipation. The physical mechanism underlying the GCS effect, however, remains under debate. In this review article, we illustrate the main mechanisms proposed for the GCS effect, and the material and device parameters that mostly affect it based on the evidence reported. We will come to the conclusion that different mechanisms are at play in the different studies reported so far. We then outline studies that can help answer open questions on the effect and achieve control over it, which is key for applications. We finally give insights into the impact that the GCS effect can have towards high-performance computing with low-energy dissipation and quantum technologies., Comment: 54 pages, 16 figures, 4 tables

Understanding the microscopic origin of the gate-controlled supercurrent (GCS) in superconducting nanobridges is crucial for engineering superconducting switches suitable for a variety of electronic applications. The origin of GCS is controversial, and various mechanisms have been proposed to explain it. In this work, we have investigated the GCS in a Ta layer deposited on the surface of InAs nanowires. Comparison between switching current distributions at opposite gate polarities and between the gate dependence of two opposite side gates with different nanowire$-$gate spacings shows that the GCS is determined by the power dissipated by the gate leakage. We also found a substantial difference between the influence of the gate and elevated bath temperature on the magnetic field dependence of the supercurrent. Detailed analysis of the switching dynamics at high gate voltages shows that the device is driven into the multiple phase slips regime by high-energy fluctuations arising from the leakage current.

The layered material ZrTe$_5$ appears to exhibit several exotic behaviors which resulted in significant interest recently, although the exact properties are still highly debated. Among these we find a Dirac/Weyl semimetallic behavior, nontrivial spin textures revealed by low temperature transport, and a potential weak or strong topological phase. The anomalous behavior of resistivity has been recently elucidated as originating from band shifting in the electronic structure. Our work examines magnetotransport behavior in ZrTe$_5$ samples in the context of multicarrier transport. The results, in conjunction with ab-initio band structure calculations, indicate that many of the transport features of ZrTe$_5$ across the majority of the temperature range can be adequately explained by the semiclassical multicarrier transport model originating from a complex Fermi surface., Comment: Main Text: 10 pages, 5 figures; Supporting Information: 10 pages, 7 figures

We have studied a near-surface two-dimensional electron gas based on an InAs quantum well on a GaAs substrate. In devices without a dielectric layer we estimated large electron mobilities on the order of $10^5$ cm$^2$/Vs. We have observed quantized conductance in a quantum point contact, and determined the g-factor. Using samples with an epitaxial Al layer, we defined multiple Josephson junctions and found the critical current to be gate tunable. Based on multiple Andreev reflections the semiconductor-superconductor interface is transparent, with an induced gap of 125 ${\mu}$eV. Our results demonstrate the viability of this platform for hybrid topological superconductor devices.

Hybrid nanostructures consisting of two parallel InAs nanowires connected by an epitaxially grown superconductor (SC) shell recently became available. Due to the defect-free SC-semiconductor interface and the two quasi-one-dimensional channels being close by, these novel platforms can be utilized to spatially separate entangled pairs of electrons by using quantum dots (QD) in the so-called Cooper pair splitting (CPS) process. The minimized distance between the QDs overcomes the limitations of single-wire-based geometries and can boost the splitting efficiency. Here we investigate CPS in such a device, for the first time, where strong inter-dot Coulomb repulsion is also present and studied thoroughly. We analyze theoretically the slight reduction of the CPS efficiency imposed by the Coulomb interaction and compare it to the experiments. Despite the competition between crossed Andreev reflection (CAR) and inter-wire capacitance, a significant CPS signal is observed indicating the dominance of the superconducting coupling. Our results demonstrate that the application of parallel InAs nanowires with epitaxial SC is a promising route for the realization of parafermionic states relying on enhanced CAR between the wires.

Cooper pair splitting (CPS) is a way to create spatially separated, entangled electron pairs. To this day, CPS is often identified in experiments as a spatial current correlation. However, such correlations can arise even in the absence of CPS, when a quantum dot is strongly coupled to the superconductor, and a subgap Shiba state is formed. Here, we present a detailed experimental characterization of those spatial current correlations, as the tunnel barrier strength between the quantum dot and the neighboring normal electrode is tuned. The correlation of the non-local signal and the barrier strength reveals a competition between CPS and the non-local probing of the Shiba state. We describe our experiment with a simple transport model, and obtain the tunnel couplings of our device by fitting the model's prediction to the measured conductance correlation curve. Furthermore, we use our theory to extract the contribution of CPS to the non-local signal., Comment: 12 pages, 3 figures

Twisted two-dimensional structures open new possibilities in band structure engineering. At magic twist angles, flat bands emerge, which give a new drive to the field of strongly correlated physics. In twisted double bilayer graphene dual gating allows changing the Fermi level and hence the electron density and also allows tuning the interlayer potential, giving further control over band gaps. Here, we demonstrate that by applying hydrostatic pressure, an additional control of the band structure becomes possible due to the change of tunnel couplings between the layers. We find that the flat bands and the gaps separating them can be drastically changed by pressures up to 2 GPa, in good agreement with our theoretical simulations. Furthermore, our measurements suggest that in finite magnetic field due to pressure a topologically non-trivial band gap opens at the charge neutrality point at zero displacement field., Comment: 19 pages, 15 figures

Gate-controlled supercurrent (GCS) in superconductor nanobridges has recently attracted attention as a means to create superconducting field effect transistors. Despite the clear advantage for applications with low power consumption and high switching speeds, the microscopic mechanism of the field effect is still under debate. In this work, we realize GCS for the first time in an epitaxial superconductor, which is created as a shell on an InAs nanowire. We show that the supercurrent in the epitaxial Al layer can be switched to the normal state by applying $\simeq\pm$ 23$\,$V on a bottom gate insulated from the nanowire by a crystalline hBN layer. Our extensive study on the temperature and magnetic field dependencies of GCS suggests that hot electron injection alone cannot explain our experimental findings.

We study the spin-dependent transport properties of a spin valve based on a double quantum dot. Each quantum dot is assumed to be strongly coupled to its own ferromagnetic lead, while the coupling between the dots is relatively weak. The current flowing through the system is determined within the perturbation theory in the hopping between the dots, whereas the spectrum of a quantum dot-ferromagnetic lead subsystem is determined by means of the numerical renormalization group method. The spin-dependent charge fluctuations between ferromagnets and quantum dots generate an effective exchange field, which splits the double dot levels. Such field can be controlled, separately for each quantum dot, by the gate voltages or by changing the magnetic configuration of external leads. We demonstrate that the considered double quantum dot spin valve setup exhibits enhanced magnetoresistive properties, including both normal and inverse tunnel magnetoresistance. We also show that this system allows for the generation of highly spin-polarized currents, which can be controlled by purely electrical means. The considered double quantum dot with ferromagnetic contacts can thus serve as an efficient voltage-tunable spin valve characterized by high output parameters., Comment: 12 pages, 8 figures

The interlayer coupling, which has a strong influence on the properties of van der Waals heterostructures, strongly depends on the interlayer distance. Although considerable theoretical interest has been demonstrated, experiments exploiting a variable interlayer coupling on nanocircuits are scarce due to the experimental difficulties. Here, we demonstrate a novel method to tune the interlayer coupling using hydrostatic pressure by incorporating van der Waals heterostructure based nanocircuits in piston-cylinder hydrostatic pressure cells with a dedicated sample holder design. This technique opens the way to conduct transport measurements on nanodevices under pressure using up to 12 contacts without constraints on the sample at fabrication level. Using transport measurements, we demonstrate that hexagonal boron nitride capping layer provides a good protection of van der Waals heterostructures from the influence of the pressure medium, and we show experimental evidence of the influence of pressure on the interlayer coupling using weak localization measurements on a TMDC/graphene heterostructure., Comment: 7 pages, 4 figures

Coupling individual atoms via tunneling fundamentally changes the state of matter: electrons bound to atomic cores become delocalized resulting in a change from an insulating to a metallic state, as it is well known from the canonical example of solids. A chain of atoms could lead to more exotic states if the tunneling takes place via the superconducting vacuum and can induce topologically protected excitations like Majorana or parafermions. Toward the realization of such artificial chains, coupling a single atom to the superconducting vacuum is well studied, but the hybridization of two sites via the superconductor was not yet reported. The peculiar vacuum of the BCS condensate opens the way to annihilate or generate two electrons from the bulk resulting in a so-called Andreev molecular state. By employing parallel nanowires with an Al superconductor shell, two artificial atoms were created at a minimal distance with an epitaxial superconducting link between. Hybridization via the BCS vacuum was observed between the two artificial atoms for the first time, as a demonstration of an Andreev molecular state., Comment: References were updated

Parallel one-dimensional semiconductor channels connected by a superconducting strip constitute the core platform in several recent quantum device proposals that rely e.g. on Andreev processes or topological effects. In order to realize these proposals, the actual material systems must have high crystalline purity and the coupling between the different elements should be controllable in terms of their interfaces and geometry. We present a strategy for synthesizing double InAs nanowires by the vapor-liquid-solid mechanism using III-V molecular beam epitaxy. A superconducting layer is deposited onto nanowires without breaking vacuum, ensuring pristine interfaces between the superconductor and the two semiconductor nanowires. The method allows for a high yield of merged as well as separate parallel nanowires, with full or half-shell superconductor coatings. We demonstrate their utility in complex quantum devices by electron transport measurements.

Van der Waals heterostructures composed of multiple few layer crystals allow the engineering of novel materials with predefined properties. As an example, coupling graphene weakly to materials with large spin orbit coupling (SOC) allows to engineer a sizeable SOC in graphene via proximity effects. The strength of the proximity effect depends on the overlap of the atomic orbitals, therefore, changing the interlayer distance via hydrostatic pressure can be utilized to enhance the interlayer coupling between the layers. In this work, we report measurements on a graphene/WSe$_2$ heterostructure exposed to increasing hydrostatic pressure. A clear transition from weak localization to weak anti-localization is visible as the pressure increases, demonstrating the increase of induced SOC in graphene.

Detecting conductance quantization in graphene nanostructures turned out more challenging than expected. The observation of well-defined conductance plateaus through graphene nanoconstrictions so far has only been accessible in the highest quality suspended or h-BN encapsulated devices. However, reaching low conductance quanta in zero magnetic field, is a delicate task even with such ultra-high mobility devices. Here, we demonstrate a simple AFM-based nanopatterning technique for defining graphene constrictions with high precision (down to 10 nm width) and reduced edge-roughness (+/- 1 nm). The patterning process is based on the in-plane mechanical cleavage of graphene by the AFM tip, along its high symmetry crystallographic directions. As-defined, narrow graphene constrictions with improved edge quality enable an unprecedentedly robust QPC operation, allowing the observation of conductance quantization even on standard $SiO_2/Si$ substrates, down to low conductance quanta. Conductance plateaus, were observed at $ne^2/h$, evenly spaced by $2e^2/h$ (corresponding to n = 3, 5, 7, 9, 11) in the absence of an external magnetic field, while spaced by $e^2/h$ (n = 1, 2, 3, 4, 5, 6) in 8T magnetic field., Comment: Main paper and supplementary informations

Ferromagnetic materials are the widely used source of spin-polarized electrons in spintronic devices, which are controlled by external magnetic fields or spin-transfer torque methods. However, with increasing demand for smaller and faster spintronic components, utilization of spin-orbit phenomena provides promising alternatives. New materials with unique spin textures are highly desirable since all-electric creation and control of spin polarization is expected, where the strength, as well as an arbitrary orientation of the polarization, can be defined without the use of a magnetic field. In this work, we use a novel spin-orbit crystal BiTeBr for this purpose. Owning to its giant Rashba spin splitting, bulk spin polarization is created at room temperature by an electric current. Integrating BiTeBr crystal into graphene-based spin valve devices, we demonstrate for the first time that it acts as a current-controlled spin injector, opening new avenues for future spintronic applications in integrated circuits., Comment: Main Text: 10 pages, 5 figures; Supporting Information: 12 pages, 6 figures

Non-reciprocal transport, where the left to right flowing current differs from the right to left flowing one, is an unexpected phenomenon in bulk crystals. BiTeBr is a non-centrosymmetric material, with a giant Rashba spin-orbit coupling which presents this unusual effect when placed in an in-plane magnetic field. It has been shown that this effect depends strongly on the carrier density, however, in-situ tuning has not yet been demonstrated. We developed a method where thin BiTeBr flakes are gate tuned via ionic-liquid gating through a thin protective hBN layer. Tuning the carrier density allows a more than \SI{400}{\percent} variation of the non-reciprocal response. Our study serves as a milestone on how a few-atomic-layer-thin van der Waals protection layer allows ionic gating of chemically sensitive, exotic nanocrystals.

Bound states in superconductor-nanowire hybrid devices play a central role, carrying informationon the ground states properties (Shiba or Andreev states) or on the topological properties of thesystem (Majorana states). The spectroscopy of such bound states relies on the formation of well-defined tunnel barriers, usually defined by gate electrodes, which results in smooth tunnel barriers.Here we used thin InP segments embedded into InAs nanowire during the growth process to forma sharp built-in tunnel barrier. Gate dependence and thermal activation measurements have beenused to confirm the presence and estimate the height of this barrier. By coupling these wires tosuperconducting electrodes we have investigated the gate voltage dependence of the induced gap inthe nanowire segment, which we could understand using a simple model based on Andreev boundstates. Our results show that these built-in barriers are promising as future spectroscopic tools

Spectral degeneracies of quantum magnets are often described as diabolical points or magnetic Weyl points, which carry topological charge. Here, we study a simple, yet experimentally relevant quantum magnet: two localized interacting electrons subject to spin-orbit coupling. In this setting, the degeneracies are not necessarily isolated points, but can also form a line or a surface. We identify ten different possible geometrical patterns formed by these degeneracy points, and study their stability under small perturbations of the Hamiltonian. Stable structures are found to depend on the relative sign of the determinants of the two $g$-tensors, $\cal S$. Both for ${\cal S}=+1$ and ${\cal S}=-1$, two stable configurations are found, and three out of these four configurations are formed by pairs of Weyl points. These stable regions are separated by a surface of almost stable configurations, with a structure akin to co-dimension one bifurcations.

Various promising qubit concepts have been put forward recently based on engineered superconductor (SC) subgap states like Andreev bound states, Majorana zero modes or the Yu-Shiba-Rusinov (Shiba) states. The coupling of these subgap states via a SC strongly depends on their spatial extension and is an essential next step for future quantum technologies. Here we investigate the spatial extension of a Shiba state in a semiconductor quantum dot coupled to a SC for the first time. With detailed transport measurements and numerical renormalization group calculations we find a remarkable more than 50 nm extension of the zero energy Shiba state, much larger than the one observed in very recent scanning tunneling microscopy (STM) measurements. Moreover, we demonstrate that its spatial extension increases substantially in magnetic field., Comment: 11 pages, 7 figures

Hybrid devices combining quantum dots with superconductors are important building blocks of conventional and topological quantum-information experiments. A requirement for the success of such experiments is to understand the various tunneling-induced non-local interaction mechanisms, namely, crossed Andreev reflection, elastic cotunneling, and direct interdot tunneling, that are present in the device. Here, we provide a theoretical study of a simple device which consists of two quantum dots and a superconductor tunnel-coupled to the dots, often called a Cooper-pair splitter. We study the three special cases where one of the three non-local mechanisms dominates, and calculate measurable ground-state properties, as well as the zero-bias and finite-bias differential conductance characterizing electron transport through this device. We describe how each non-local mechanism controls the measurable quantities, and thereby find experimental fingerprints that allow one to identify and quantify the dominant non-local mechanism using experimental data. Finally, we study the triplet blockade effect and the associated negative differential conductance in the Cooper-pair splitter, and show that they can arise regardless of the nature of the dominant non-local coupling mechanism. Our results should facilitate the characterization of hybrid devices, and their optimization for various quantum-information-related experiments and applications.

Recent years have brought an explosion of activities in the research of topological aspects of condensed-matter systems. Topologically non-trivial phases of matter are typically accompanied by protected surface states or exotic degenerate excitations such as Majorana end states or Haldane's localized spinons. Topologically protected degeneracies can, however, also appear in the bulk. An intriguing example is provided by Weyl semimetals, where topologically protected electronic band degeneracies and exotic surface states emerge even in the absence of interactions. Here we demonstrate experimentally and theoretically that Weyl degeneracies appear naturally in an interacting quantum dot system, for specific values of the external magnetic field. These magnetic Weyl points are robust against spin-orbit coupling unavoidably present in most quantum dot devices. Our transport experiments through an InAs double dot device placed in magnetic field reveal the presence of a pair of Weyl points, exhibiting a robust ground state degeneracy and a corresponding protected Kondo effect., Comment: 6 pages, 3 figures. Supplementary Information can be downloaded as an ancillary pdf file

Spin orbit interaction can be strongly boosted when a heavy element is embedded into an inversion asymmetric crystal field. A simple structure to realize this concept in a 2D crystal contains three atomic layers, a middle one built up from heavy elements generating strong atomic spin-orbit interaction and two neighboring atomic layers with different electron negativity. BiTeI is a promising candidate for such a 2D crystal, since it contains heavy Bi layer between Te and I layers. Recently the bulk form of BiTeI attracted considerable attention due to its giant Rashba interaction, however, 2D form of this crystal was not yet created. In this work we report the first exfoliation of single layer BiTeI using a recently developed exfoliation technique on stripped gold. Our combined scanning probe studies and first principles calculations show that SL BiTeI flakes with sizes of 100 $\mu$m were achieved which are stable at ambient conditions. The giant Rashba splitting and spin-momentum locking of this new member of 2D crystals open the way towards novel spintronic applications and synthetic topological heterostructures., Comment: 20 pages, 5 figures

The formation of quantum Hall channels inside the bulk of graphene is studied using various contact and gate geometries. p-n junctions are created along the longitudinal direction of samples, and enhanced conductance is observed in the case of bipolar doping due to new conducting channels forming in the bulk, whose position, propagating direction and, in one geometry, coupling to electrodes are determined by the gate-controlled filling factor across the device. This effect could be exploited to probe the behavior and interaction of quantum Hall channels protected against uncontrolled scattering at the edges.

The interaction of carbon monoxide molecules with atomic-scale platinum nanojunctions is investigated by low temperature mechanically controllable break junction experiments. Combining plateaus' length analysis, two dimensional conductance-displacement histograms and conditional correlation analysis a comprehensive microscopic picture is proposed about the formation and evolution of Pt-CO-Pt single-molecule configurations. Our analysis implies that before pure Pt monoatomic chains would be formed a CO molecule infiltrates the junction, first in a configuration being perpendicular to the contact axis. This molecular junction is strong enough to pull a monoatomic platinum chain with the molecule being incorporated in the chain. Along the chain formation the molecule can either stay in the perpendicular configuration, or rotate to a parallel configuration. The evolution of the single-molecule configurations along the junction displacement shows quantitative agreement with theoretical predictions, justifying the interpretation in terms of perpendicular and parallel molecular alignment. Our analysis demonstrates that the combination of two dimensional conductance-displacement histograms with conditional correlation analysis is a useful tool to separately analyze fundamentally different types of junction trajectories in single molecule break junction experiments.

Indium arsenide (InAs) nanowires (NWs) are a promising platform to fabricate quantum electronic devices, among others they have strong spin-orbit interaction (SOI). The controlled tuning of the SOI is desired in spin based quantum devices. In this study we investigate the possibility of tuning the SOI by electrostatic field, which is generated by a back gate and two side gates placed on the opposite sides of the NW. The strength of the SOI is analyzed by weak anti-localization effect. We demonstrate that the strength of SOI can be strongly tuned by a factor of 2 with the electric field across the NW, while the average electron density is kept constant. Furthermore a simple electrostatic model is introduced to calculate the expected change of SOI. Good agreement is found between the experimental results and the estimated Rashba type SOI generated by the gate-induced electric field., Comment: 7 pages, 3 figures

We present a novel method to establish inner point contacts on hexagonal boron nitride (hBN) encapsulated graphene heterostructures with dimensions as small as 100 nm by pre-patterning the top-hBN in a separate step prior to dry-stacking. 2 and 4-terminal field effect measurements between different lead combinations are in qualitative agreement with an electrostatic model assuming pointlike contacts. The measured contact resistances are 0.5-1.5 k$\Omega$ per contact, which is quite low for such small contacts. By applying a perpendicular magnetic fields, an insulating behaviour in the quantum Hall regime was observed, as expected for inner contacts. The fabricated contacts are compatible with high mobility graphene structures and open up the field for the realization of several electron optical proposals.

A superconductor is a natural source of spin-entangled spatially separated electron pairs. Although the first Cooper-pair splitter devices have been realized recently, an experimental confirmation of the spin state and the entanglement of the emitted electron pairs is lacking up to now. In this paper a method is proposed to confirm the spin-singlet character of individual split Cooper pairs. Two quantum dots (QDs), each of them holding one spin-prepared electron, serve as the detector of the spin state of a single Cooper pair that is forced to split when it tunnels out from the superconductor to the QDs. The number of charges on the QDs, measured at the end of the procedure, carries information on the spin state of the extracted Cooper pair. The method relies on the experimentally established toolkit of QD-based spin qubits: resonant spin manipulation, Pauli blockade, and charge measurement., Comment: 15 pages, 7 figures

We present a proposal for a fully electrically controllable quantum dot based spin current injector. The device consists of a quantum dot that is strongly coupled to a ferromagnetic electrode on one side and weakly coupled to a nonmagnetic electrode on the other side. The presence of ferromagnetic electrode results in an exchange field that splits the dot level. We show that this exchange-induced splitting can lead to almost full spin polarization of the current flowing through the device. Moreover, we also demonstrate that the sign of the polarization can be changed by the gate or the bias voltage within a switching time in the nanosecond range. Thus the proposed device can operate as an electrically controlled, fast switchable spin current source, which can be realized in various state-of-the-art nanostructures.