1. Characterization of vertical-cavity semiconductor structures
- Author
-
Christensen, D.H., Pellegrino, J.G., Hickernell, R.K., Crochiere, S.M., Parsons, C.A., and Rai, R.K.
- Subjects
Semiconductors -- Research ,Electron beams -- Usage ,Physics - Abstract
The characteristics of vertical-cavity surface-emitting laser semiconductor structures grown on GaAs wafer substrates were investigated using x-ray diffractometry, scanning electron microscopy and transmission electron microscopy. The results showed that vertical-cavity semiconductor structures were amenable to optical, x-ray and electron beam metrologies. Reflectance spectroscopy provided direct information on cavity resonance, molecular beam epitaxy provided uniform and accurate tolerances and x-ray diffractometry allowed for the nondestructive analysis of the structures.
- Published
- 1992