226 results on '"Cowern, N. E. B."'
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2. Boron Diffusion in Strained and Strain-Relaxed SiGe
3. Investigation of a Novel Rapid Thermal Processing Concept Using an Electro-Optically Controlled Radiation Cavity
4. Raman scattering studies of ultrashallow Sb implants in strained Si
5. Raman study of the strain and H2 preconditioning effect on self-assembled Ge island on Si (001)
6. Self-assembled germanium islands grown on (0 0 1) silicon substrates by low-pressure chemical vapor deposition
7. Defects and Diffusion in Silicon: An Overview
8. On the «A Symmetrical» Behavior of Transient Enhanced Diffusion in Pre-Amorphised Si Wafers
9. Energy straggling of heavy ions in solids
10. The Effect of Oxygen on The Electrical Activation and Diffusion of Ion-Implanted Boron
11. Room-Temperature Migration of Ion-Implanted Boron in Silicon
12. Low Energy Implantation and Transient Enhanced Diffusion: Physical Mechanisms and Technology Implications
13. Enhanced Antimony Activation for Ultra-Shallow Junctions in Strained Silicon
14. Diffusion of ion-implanted Boron and Silicon in Germanium
15. Experimental Study on the Mechanism of Carbon Diffusion in Silicon
16. Diffusion of Boron in Germanium and Si1-xGex (x>50%) alloys Suresh Uppal
17. Physics-Based Diffusion Simulations for Preamorphized Ultrashallow Junctions
18. Ultrashallow Junction Formation and Gate Activation in Deep-Submicron CMOS
19. Prediction of boron transient enhanced diffusion through the atom-by-atom modeling of extended defects.
20. Comment on 'Diffusion of n-type dopants in germanium'
21. Transient diffusion of ion-implanted B in Si: Dose, time, and matrix dependence of atomic and electrical profiles.
22. General model for intrinsic dopant diffusion in silicon under nonequilibrium point-defect conditions.
23. Dislocation formation and B transient diffusion in C coimplanted Si.
24. Shallow boron junctions and preamorphization for deep submicron silicon technology.
25. Comment on “Diffusion of n-type dopants in germanium” [Appl. Phys. Rev. 1, 011301 (2014)]
26. Local traps as nanoscale reaction-diffusion probes: B clustering in c-Si
27. Requirements for Device and Process Modeling of Submicron Devices
28. Diffusion and activation of dopants in silicon and advanced silicon-based materials
29. Self-assembled germanium islands grown on (001) silicon substrates by low-pressure chemical vapor deposition
30. Fundamental diffusion issues for deep-submicron device processing
31. Enhanced n-type dopant solubility in tensile-strained Si
32. Extended Point Defects in Crystalline Materials: Ge and Si
33. Doping characterization for germanium-based microelectronics and photovoltaics using the differential Hall technique
34. Transfer of physically-based models from process to device simulations: Application to advanced Strained Si/SiGe MOSFETs
35. B profile alteration by annealing in reactive ambients
36. Constraints on micro-Raman strain metrology for highly doped strained Si materials
37. Surface proximity and boron concentration effects on end-of-range defect formation during nonmelt laser annealing
38. Antimony for n-type metal oxide semiconductor ultrashallow junctions in strained Si: A superior dopant to arsenic?
39. Vacancy engineering for highly activated ‘diffusionless’ boron doping in bulk silicon
40. Diffusion in a Single Crystal within a Stressed Environment
41. Boron deactivation in preamorphized silicon on insulator: Efficiency of the buried oxide as an interstitial sink
42. Raman scattering studies of ultrashallow Sb implants in strained Si
43. Influence of F[sup +] Co-Implants on EOR Defect Formation in B[sup +]-Implanted, Ultrashallow Junctions
44. Deactivation of ultrashallow boron implants in preamorphized silicon after nonmelt laser annealing with multiple scans
45. Highly conductive Sb-doped layers in strained Si
46. Effect of amorphization and carbon co-doping on activation and diffusion of boron in silicon
47. Suppression of phosphorus diffusion by carbon co-implantation
48. Diffusion and activation of ultrashallow B implants in silicon on insulator: End-of-range defect dissolution and the buried Si∕SiO2 interface
49. Ultra-shallow Junction Formation in SOI using Vacancy Engineering
50. Junction Stability of B Doped Layers in SOI Formed with Optimized Vacancy Engineering Implants
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