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14 results on '"Costecalde, Jean"'

1. PFM Performances Analysis of PZT Piezoelectric Nano Cantilevers Fabricated on Si Wafer

Author

Remiens, Denis, Costecalde, Jean, Dezest, Denis, Mathieu, Fabrice, Nicu, Liviu, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Matériaux et Acoustiques pour MIcro et NAno systèmes intégrés - IEMN (MAMINA - IEMN), Institut d’Électronique, de Microélectronique et de Nanotechnologie - Département Opto-Acousto-Électronique - UMR 8520 (IEMN-DOAE), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT), Service Instrumentation Conception Caractérisation (LAAS-I2C), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), and Équipe NanoBioSystèmes (LAAS-NBS)

Subjects
NEMS, [SPI]Engineering Sciences [physics], piezoelectricity, PZT, General Engineering, General Materials Science, PFM
Abstract

International audience; We present in this work and for the first time a high level of integration of piezoelectric nano-cantilevers on a silicon substrate (4 inches in diameter). We use lead titanate – zirconate material as piezoelectric material mainly because of its excellent piezoelectric activity at macro scale. However, its integration within a silicon technological process is limited by the difficulty of structuring this material with sub micrometer resolution at the wafer scale. At the nano-scale many questions still remain unanswered. For example: what becomes of the piezoelectric activity? What are the limitations of the integration level process? What are the best electrodes (bottom and top) for piezoelectric film actuation? In this study we have tried to answer some of these fundamental questions. To this end, we have developed a specific patterning method based on deep UV lithography to fabricate nano cantilevers with a high density of integration. The main objective is to obtain sub-micron features by lifting off a 70-nm thick PZT layer while preserving the material’s piezoelectric properties. We show that for the actuation of a very thin film the choice of the bottom and top electrodes has a strong influence. To analyse the piezoelectric activity at nano scale we use the Piezo Force Microscopy, this measurement approach is a good characterization tool for piezoelectric nano devices

Published
2015

2. Antiferroelectric films for energy storage applications

Author

Ge, Jun, Remiens, Denis, Dong, Xianlin, Chen, Ying, Costecalde, Jean, Wang, Genshui, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Matériaux et Acoustiques pour MIcro et NAno systèmes intégrés - IEMN (MAMINA - IEMN), Institut d’Électronique, de Microélectronique et de Nanotechnologie - Département Opto-Acousto-Électronique - UMR 8520 (IEMN-DOAE), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Subjects
[SPI]Engineering Sciences [physics]
Abstract

Symposium M - Multifunctional binary and complex oxides films and nanostructures for nanoelectronics and energy applications - II; International audience

Published
2015

3. PZT Nanofilm-Based Wafer Scale Nanoresonators

Author

Dezest, Denis, Mathieu, Fabrice, Mazenq, Laurent, Nicu, Liviu, Soyer, Caroline, Costecalde, Jean, Thomas, Olivier, Remiens, Denis, Équipe NanoBioSystèmes (LAAS-NBS), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées, Service Instrumentation Conception Caractérisation (LAAS-I2C), Service Techniques et Équipements Appliqués à la Microélectronique (LAAS-TEAM), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Laboratoire des Sciences de l'Information et des Systèmes (LSIS), Centre National de la Recherche Scientifique (CNRS)-Arts et Métiers Paristech ENSAM Aix-en-Provence-Université de Toulon (UTLN)-Aix Marseille Université (AMU), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT), and Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Arts et Métiers Paristech ENSAM Aix-en-Provence-Centre National de la Recherche Scientifique (CNRS)

Subjects
NEMS, piezoelectric acutation, PZT, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, actuators
Abstract

International audience; In this work, we present an unprecedented level of integration of piezoelectric actuation means on arrays of functional nanoresonators at the wafer scale. We use 150-nm thin lead titanate zirconate (PZT) as piezoelectric material mainly because of its excellent actuation properties even when geometrically constrained at extreme scale. This work paves promising ways for NEMS to be used in configurations where transduction capabilities are integrated at the nanodevice level providing effective fabrication process flow at the wafer-scale.

Published
2015

12. Enhancement of energy storage in epitaxial PbZrO3 antiferroelectric films using strain engineering.

Author

Jun Ge, Remiens, Denis, Xianlin Dong, Ying Chen, Costecalde, Jean, Feng Gao, Fei Cao, and Genshui Wang

Subjects
LEAD compounds, ENERGY storage, EPITAXY, STRAINS & stresses (Mechanics), CRYSTALLOGRAPHY, PHASE transitions
Abstract

We demonstrate an approach to enhance the energy storage density W of antiferroelectric film through simple altering a crystallographic orientation of the substrate. We reveal that the antiferroelectric phase stability of PbZrO3 can be enhanced for the (110) or (111) SrTiO3 substrate orientation, thus suppresses the antiferroelectric-ferroelectric phase transition to higher electric field with ~120 kV/cm increment. In addition, the polarization values of these films are also favorably increased hence increases W by 5.3 J/cm3 at 700 kV/cm. The observed enhancement is found to originate from a high sensitivity of phase transition to mechanical confinements due to the volume expansion at the transition. [ABSTRACT FROM AUTHOR]

Published
2014
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13. Ion-Beam Etching on Nanostructured La2 Ti2 O7 Piezoelectric Thin Films.

Author

Ferri, Anthony, Saitzek, Sébastien, Shao, Zhenmian, Declercq, Gaëtan, Costecalde, Jean, Rémiens, Denis, Deresmes, Dominique, Troadec, David, Desfeux, Rachel, and Viehland, D.

Subjects
ION beams, ELECTRIC properties of nanostructured materials, PIEZOELECTRIC thin films, ETCHING, SCANNING electron microscopy
Abstract

The impact of generated Ga+ ion beams on the functional properties of crystallized lanthanum dititanate oxide ( La2 Ti2 O7) ferroelectric thin films has been investigated at the nanometer scale by means of the scanning probe microscopy. Both the surface and the electrical response are shown to undergo sensitive modifications for areas exposed to ion irradiation. These are revealed through dynamic force mode, Kelvin force, and piezoresponse force ( PFM) microscopies. Despite the nanometer film-dimensions, local piezoactivity is still detected, thus confirming the high resistance of the material to ion-beam exposures. In addition, crystallized La2 Ti2 O7 film, with a Pt electrode on top, is successfully patterned by focused ion beam ( FIB) process. This allows the achieving of localized islands with lateral sizes ranging from 500 to 300 nm. Nanoscale electromechanical response is measured inside these nanostructures with the help of the PFM technique. In this case, the local piezosignal exhibits a level similar to the one obtained for the unetched film. The measures evidence no obvious sidewall effect in spite of not using the usual postannealing treatment that leads to functional properties recovery. This study demonstrates that the use of La2 Ti2 O7 materials combined with the FIB technique constitute a suitable and promising test-bench to pattern low-dimensional nanostructures. These investigations bear significant implications in view of the development of lead-free piezoelectric thin films for nanoelectromechanical systems applications. [ABSTRACT FROM AUTHOR]

Published
2013
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14. Enhanced tunability performance of low temperature crystallized Pb0.4Sr0.6TiO3 thin films derived from distinct microstructure.

Author

Li, Kui, Rémiens, Denis, Dong, Xianlin, Costecalde, Jean, Sama, Nossikpendou, Lei, Xiuyun, Li, Tao, Du, Gang, and Wang, Genshui

Subjects
*CRYSTALLIZATION, *LOW temperatures, *LEAD alloys, *TITANIUM dioxide, *THIN films, *MICROSTRUCTURE, *MAGNETRON sputtering
Abstract

Abstract: This investigation presents a novel method to prepare Pb0.4Sr0.6TiO3 thin films crystallized at relatively low temperature with different microstructures and enhanced tunability performance on LaNiO3 buffered SiO2/Si substrates. The incorporation of oxygen during the ex-situ RF magnetron sputtering unusually changes the microstructure of the films and remarkably improves the tunability because of the modulated dielectric constant with and without electric field. The dielectric response versus the DC electric field analysis revealed that the tunablity increased from 61.6% to 73.4% at ±400kV/cm with increasing content of oxygen while the loss factor retained relatively low, suggesting the film could be one of the promising candidates for the microwave tunable devices compatible with Si integrated circuits. [Copyright &y& Elsevier]

Published
2013
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