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172 results on '"Corraze, B."'

1. Lattice contraction induced by resistive switching in chromium-doped V2O3: a hallmark of Mott physics

Author

Babich, D., Tranchant, J., Adda, C., Corraze, B., Besland, M. -P., Warnicke, P., Bedau, D., Bertoncini, P., Mevellec, J. -Y., Humbert, B., Rupp, J., Hennen, T., Wouters, D., Llopis, R., Cario, L., and Janod, E.

Subjects
Condensed Matter - Strongly Correlated Electrons, Condensed Matter - Materials Science
Abstract

Since the beginnings of the electronic age, a quest for ever faster and smaller switches has been initiated, since this element is ubiquitous and foundational in any electronic circuit to regulate the flow of current. Mott insulators are promising candidates to meet this need as they undergo extremely fast resistive switching under electric field. However the mechanism of this transition is still under debate. Our spatially-resolved {\mu}-XRD imaging experiments carried out on the prototypal Mott insulator (V0.95Cr0.05)2O3 show that the resistive switching is associated with the creation of a conducting filamentary path consisting in an isostructural compressed phase without any chemical nor symmetry change. This clearly evidences that the resistive switching mechanism is inherited from the bandwidth-controlled Mott transition. This discovery might hence ease the development of a new branch of electronics dubbed Mottronics., Comment: 14 pages, 5 figures + Supplementary Materials (14 pages, 7 figures)

Published
2021

2. Watching the birth of a charge density wave order: diffraction study on nanometer-and picosecond-scales

Author

Laulhé, C., Huber, T., Lantz, G., Ferrer, A., Mariager, S. O., Grübel, S., Rittmann, J., Johnson, J. A., Esposito, V., Lübcke, A., Huber, L., Kubli, M., Savoini, M., Jacques, V. L. R., Cario, L., Corraze, B., Janod, E., Ingold, G., Beaud, P., Johnson, S. L., and Ravy, S.

Subjects
Condensed Matter - Strongly Correlated Electrons
Abstract

Femtosecond time-resolved X-ray diffraction is used to study a photo-induced phase transition between two charge density wave (CDW) states in 1T-TaS$_2$, namely the nearly commensurate (NC) and the incommensurate (I) CDW states. Structural modulations associated with the NC-CDW order are found to disappear within 400 fs. The photo-induced I-CDW phase then develops through a nucleation/growth process which ends 100 ps after laser excitation. We demonstrate that the newly formed I-CDW phase is fragmented into several nanometric domains that are growing through a coarsening process. The coarsening dynamics is found to follow the universal Lifshitz-Allen-Cahn growth law, which describes the ordering kinetics in systems exhibiting a non-conservative order parameter., Comment: 6 pages, 5 figures

Published
2017
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4. First-Order Insulator-to-Metal Mott Transition in the Paramagnetic 3D System GaTa4Se8

Author

Camjayi, A., Acha, C., Weht, R., Rodríguez, M. G., Corraze, B., Janod, E., Cario, L., and Rozenberg, M. J.

Subjects
Condensed Matter - Strongly Correlated Electrons
Abstract

The nature of the Mott transition in the absence of any symmetry braking remains a matter of debate. We study the correlation-driven insulator-to-metal transition in the prototypical 3D Mott system GaTa4Se8, as a function of temperature and applied pressure. We report novel experiments on single crystals, which demonstrate that the transition is of first order and follows from the coexistence of two states, one insulating and one metallic, that we toggle with a small bias current. We provide support for our findings by contrasting the experimental data with calculations that combine local density approximation with dynamical mean-field theory, which are in very good agreement., Comment: 5 pages and 4 figures. Supplemental material: 2 pages, 2 figures

Published
2014
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5. Non thermal and purely electronic resistive transition in narrow gap Mott insulators

Author

Stoliar, P., Rozenberg, M., Janod, E., Corraze, B., Tranchant, J., and Cario, L.

Subjects
Condensed Matter - Strongly Correlated Electrons, Condensed Matter - Materials Science
Abstract

Mott insulator to metal transitions under electric field are currently the subject of numerous fundamental and applied studies. This puzzling effect, which involves non-trivial out-of-equilibrium effects in correlated systems, is indeed at play in the operation of a new class of electronic memories, the Mott memories. However the combined electronic and thermal effects are difficult to disentangle in Mott insulators undergoing such transitions. We report here a comparison between the properties under electric field of a canonical Mott insulator and a model built on a realistic 2D resistor network able to capture both thermal effects and electronic transitions. This comparison made specifically on the family of narrow gap Mott insulators AM4Q8, (A = Ga or Ge; M=V, Nb or Ta, and Q = S or Se) unambiguously establishes that the resistive transition experimentally observed under electric field arises from a purely electronic mechanism., Comment: Accepted for publication in Physical Review B

Published
2014

6. Ultrafast filling of an electronic pseudogap in an incommensurate crystal

Author

Brouet, V., Mauchain, J., Papalazarou, E., Faure, J., Marsi, M., Lin, P. H., Taleb-Ibrahimi, A., Fevre, P. Le, Bertran, F., Cario, L., Janod, E., Corraze, B., Phuoc, V. Ta, and Perfetti, L.

Subjects
Condensed Matter - Strongly Correlated Electrons, Condensed Matter - Materials Science
Abstract

We investigate the quasiperiodic crystal (LaS)1.196(VS2) by angle and time resolved photoemission spectroscopy. The dispersion of electronic states is in qualitative agreement with band structure calculated for the VS2 slab without the incommensurate distortion. Nonetheless, the spectra display a temperature dependent pseudogap instead of quasiparticles crossing. The sudden photoexcitation at 50 K induces a partial filling of the electronic pseudogap within less than 80 fs. The electronic energy flows into the lattice modes on a comparable timescale. We attribute this surprisingly short timescale to a very strong electron-phonon coupling to the incommensurate distortion. This result sheds light on the electronic localization arising in aperiodic structures and quasicrystals.

Published
2013
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7. Temperature driven Vanadium clusterization and band gap enlargement in the layered misfit compound (LaS)$_{1.196}$VS$_2$

Author

Phuoc, V. Ta, Brouet, V., Corraze, B., Janod, E., and Cario, L.

Subjects
Condensed Matter - Strongly Correlated Electrons, Condensed Matter - Materials Science
Abstract

Intriguing properties of the misfit layered chalcogenide (LaS)$_{1.196}$VS$_2$ crystals were investigated by transport, optical measurements, angle-resolved photoemission (ARPES) and x-ray diffraction. Although no clear anomaly is found in transport properties as a function of temperature, a large spectral weight transfer, up to at least 1 eV, is observed by both optical and photoemission spectroscopies. ARPES reveals that a nearly filled band with negative curvature, close enough from the Fermi level at 300K to produce metallic-like behaviour as observed in optical conductivity spectra. At low temperature, the band structure is strongly modified, yielding to an insulating state with a optical gap of 120 meV. An accurate (3+1)D analysis of x-ray diffraction data shows that, although a phase transition does not occur, structural distortions increase as temperature is decreased, and vanadium clusterization is enhanced. We found that the changes of electronic properties and structure are intimately related. This indicates that structural distorsion play a major role in the insulating nature of (LaS)$_{1.196}$VS$_2$ and that electronic correlation may not be important, contrary to previous belief. These results shed a new light on the mechanism at the origin of non-linear electric properties observed in (LaS)$_{1.196}$VS$_2$.

Published
2012

8. Electric Pulse Induced Resistive Switching, Electronic Phase Separation, and Possible Superconductivity in a Mott insulator

Author

Vaju, C., Cario, L., Corraze, B., Janod, E., Dubost, V., Cren, T., Roditchev, D., Braithwaite, D., and Chauvet, O.

Subjects
Condensed Matter - Strongly Correlated Electrons, Condensed Matter - Superconductivity
Abstract

Metal-insulator transitions (MIT) belong to a class of fascinating physical phenomena, which includes superconductivity, and colossal magnetoresistance (CMR), that are associated with drastic modifications of electrical resistance. In transition metal compounds, MIT are often related to the presence of strong electronic correlations that drive the system into a Mott insulator state. In these systems the MIT is usually tuned by electron doping or by applying an external pressure. However, it was noted recently that a Mott insulator should also be sensitive to other external perturbations such as an electric field. We report here the first experimental evidence of a non-volatile electric-pulse-induced insulator-to-metal transition and possible superconductivity in the Mott insulator GaTa4Se8. Our Scanning Tunneling Microscopy experiments show that this unconventional response of the system to short electric pulses arises from a nanometer scale Electronic Phase Separation (EPS) generated in the bulk material., Comment: Highlight in Advanced Functional Materials 18, 1-4 (2008) doi : 10.1002/adfm.200800558

Published
2009
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9. Electric field effects, Mott insulator, Surface patterning, Scanning tunneling microscopy, Transition metal chalcogenides

Author

Dubost, Vincent, Cren, T., Vaju, C., Cario, Laurent, Corraze, B., Janod, E., Debontridder, François, and Roditchev, D.

Subjects
Condensed Matter - Materials Science
Abstract

We report the first experimental evidence for a strong electromechanical coupling in the Mott insulator GaTa4Se8 allowing a highly reproducible nano-writing with a Scanning Tunneling Microscope (STM). The local electric field across the STM junction is observed to have a threshold value above which the clean (100) surface of GaTa4Se8 becomes mechanically instable: At voltage biases V > 1.1V the surface suddenly inflates and comes in contact with the STM tip, resulting in nanometer size craters. The formed pattern can be indestructibly "read" by STM at lower voltage bias, thus allowing a 5 Tdots/inch2 dense writing/reading at room temperature. The discovery of the electromechanical coupling in GaTa4Se8 might give new clues in the understanding of the Electric Pulse Induced Resistive Switching recently observed in this stoechiometric Mott insulator., Comment: Accepted for Advanced Functional Materials

Published
2009

11. Localization, Coulomb interactions and electrical heating in single-wall carbon nanotubes/polymer composites

Author

Benoit, J. M., Corraze, B., and Chauvet, O.

Subjects
Condensed Matter - Mesoscale and Nanoscale Physics
Abstract

Low field and high field transport properties of carbon nanotubes/polymer composites are investigated for different tube fractions. Above the percolation threshold f_c=0.33%, transport is due to hopping of localized charge carriers with a localization length xi=10-30 nm. Coulomb interactions associated with a soft gap Delta_CG=2.5 meV are present at low temperature close to f_c. We argue that it originates from the Coulomb charging energy effect which is partly screened by adjacent bundles. The high field conductivity is described within an electrical heating scheme. All the results suggest that using composites close to the percolation threshold may be a way to access intrinsic properties of the nanotubes by experiments at a macroscopic scale., Comment: 4 pages, 5 figures, Submitted to Phys. Rev. B

Published
2002
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16. Controlling materials with lattice vibrations

Author

Privault, Gaël, Collet, Eric, Lorenc, Maciej, Chaban, Ievgeniia, Subedi, A, Mevellec, J, Corraze, B, Humbert, B, Janod, E, Daro, N, Chastanet, G, Institute for Physical Research (IPR), National Academy of Sciences of the Republic of Armenia [Yerevan] (NAS RA), Institut de Physique de Rennes (IPR), Université de Rennes (UR)-Centre National de la Recherche Scientifique (CNRS), Centre de Physique Théorique [Palaiseau] (CPHT), École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS), Institut des Matériaux Jean Rouxel (IMN), Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Nantes université - UFR des Sciences et des Techniques (Nantes univ - UFR ST), Nantes Université - pôle Sciences et technologie, Nantes Université (Nantes Univ)-Nantes Université (Nantes Univ)-Nantes Université - pôle Sciences et technologie, Nantes Université (Nantes Univ)-Nantes Université (Nantes Univ)-Nantes Université - Ecole Polytechnique de l'Université de Nantes (Nantes Univ - EPUN), Nantes Université (Nantes Univ)-Nantes Université (Nantes Univ), Institut de Chimie de la Matière Condensée de Bordeaux (ICMCB), Université de Bordeaux (UB)-Institut Polytechnique de Bordeaux-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), and ANR-19-CE30-0004,ELECTROPHONE,Transitions de phase ELECTROnique de matériaux moleculaires controllées par PHONONIQUE non-linéaire(2019)

Subjects
[PHYS]Physics [physics], [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]
Abstract

National audience

Published
2021

17. Dynamical limits by downsizing for the photo-induced switching in a molecular material revealed by time-resolved X-ray diffraction

Author

Yang F, Jacek Kubicki, Cristian Enachescu, A. Volte, Céline Mariette, Elzbieta Trzop, Matteo Levantino, Eric Collet, Marie-Laure Boillot, Marco Cammarata, Maciej Lorenc, Hervé Cailleau, Corraze B, Roman Bertoni, X. Dong, Michael Wulff, Laurentiu Stoleriu, Institut de Physique de Rennes (IPR), Université de Rennes (UR)-Centre National de la Recherche Scientifique (CNRS), Université de Rennes 1 (UR1), and Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[PHYS]Physics [physics], Materials science, X-ray crystallography, Molecular materials, Molecular physics
Abstract

Cooperative molecular switching at the solid state is exemplified by spin crossover phenomenon in crystals of transition metal complexes. Time-resolved studies with temporal resolutions that separate molecular level dynamics from macroscopic changes, afford clear distinction between the time scales of the different degrees of freedom involved. In this work we use 100 ps X-ray diffraction to follow simultaneously the molecular spin state and the structure of the lattice during the photoinduced low spin to high spin transition in microcrystals of [FeIII(3-MeO-SalEen)2]PF6. We show the existence of a delay between the crystalline volume increase driven by the propagation of collective volumic strain waves, and the cooperative macroscopic switching of molecular state. Such behaviour is different from the expectation that phase transformation only requires atomic displacements in the unit cell, that can occur simultaneously with propagation of a volumic strain. Model simulations and discussions of the physical picture explain the phenomenon with thermally activated kinetics governed by local energy barriers separating the molecular states.

Published
2021

18. Symmetry-resolved THz, IR, Raman spectroscopies and DFT studies of lattice phonon modes in the spin crossover crystal [Fe(phen)2(NCS)2]

Author

Privault, Gaël, Gournay, Lucas, Mevellec, J, Corraze, B, Chaban, Ievgeniia, Janod, E, Lorenc, Maciej, Daro, N, Chastanet, G, Humbert, B, Subedi, A, Collet, Eric, Institut de Physique de Rennes (IPR), Université de Rennes (UR)-Centre National de la Recherche Scientifique (CNRS), Institut des Matériaux Jean Rouxel (IMN), Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Nantes université - UFR des Sciences et des Techniques (Nantes univ - UFR ST), Nantes Université - pôle Sciences et technologie, Nantes Université (Nantes Univ)-Nantes Université (Nantes Univ)-Nantes Université - pôle Sciences et technologie, Nantes Université (Nantes Univ)-Nantes Université (Nantes Univ)-Nantes Université - Ecole Polytechnique de l'Université de Nantes (Nantes Univ - EPUN), Nantes Université (Nantes Univ)-Nantes Université (Nantes Univ), Institut de Chimie de la Matière Condensée de Bordeaux (ICMCB), Université de Bordeaux (UB)-Institut Polytechnique de Bordeaux-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Centre de Physique Théorique [Palaiseau] (CPHT), École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS), and ANR-19-CE30-0004,ELECTROPHONE,Transitions de phase ELECTROnique de matériaux moleculaires controllées par PHONONIQUE non-linéaire(2019)

Subjects
[PHYS]Physics [physics], [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [CHIM.CRIS]Chemical Sciences/Cristallography, [CHIM.COOR]Chemical Sciences/Coordination chemistry
Abstract

National audience

Published
2021

19. Experimental and theoretical analysis of vibrational modes in Fe(phen)2(NCS)2 single crystal

Author

Privault, Gaël, Gournay, Lucas, Mevellec, J, Corraze, B, Chaban, Ievgeniia, Janod, E, Lorenc, Maciej, Daro, N, Chastanet, G, Humbert, B, Subedi, A, Collet, Eric, Institut de Physique de Rennes (IPR), Université de Rennes (UR)-Centre National de la Recherche Scientifique (CNRS), Institut des Matériaux Jean Rouxel (IMN), Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Nantes université - UFR des Sciences et des Techniques (Nantes univ - UFR ST), Nantes Université - pôle Sciences et technologie, Nantes Université (Nantes Univ)-Nantes Université (Nantes Univ)-Nantes Université - pôle Sciences et technologie, Nantes Université (Nantes Univ)-Nantes Université (Nantes Univ)-Nantes Université - Ecole Polytechnique de l'Université de Nantes (Nantes Univ - EPUN), Nantes Université (Nantes Univ)-Nantes Université (Nantes Univ), Institut de Chimie de la Matière Condensée de Bordeaux (ICMCB), Université de Bordeaux (UB)-Institut Polytechnique de Bordeaux-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Centre de Physique Théorique [Palaiseau] (CPHT), École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS), and ANR-19-CE30-0004,ELECTROPHONE,Transitions de phase ELECTROnique de matériaux moleculaires controllées par PHONONIQUE non-linéaire(2019)

Subjects
[PHYS]Physics [physics], [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [CHIM.CRIS]Chemical Sciences/Cristallography, [CHIM.COOR]Chemical Sciences/Coordination chemistry
Abstract

National audience

Published
2021

20. Microscopic identification of the electric-field-driven insulator to metal transition in a Mott insulator

Author

Babich, D, Tranchant, J, Adda, C, Corraze, B, Besland, M.-P, Warnike, P, Bedau, D, Bertoncini, P, Mevellec, J.-Y, Humbert, B, Rupp, J, Hennen, T, Wouters, D, Llopis, R, Cario, L, Janod, E, Institut des Matériaux Jean Rouxel (IMN), Université de Nantes, CNRS, 2 rue de la Houssinière, BP 32229, 44322 Nantes cedex 3, France, CICNanoGUNE, The Swiss Light Source (SLS) (SLS-PSI), Paul Scherrer Institute (PSI), Université de Nantes, CNRS, Institut des Matériaux Jean Rouxel, IMN, F-44000 Nantes, France, and Institut für Werkstoffe der Elektrotechnik II and Jülich-Aachen Research Alliance on Fundamentals of Information Technology (JARA-FIT), RWTH Aachen University, D-52056 Aachen, Germany

Subjects
[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], [PHYS.COND.CM-SCE]Physics [physics]/Condensed Matter [cond-mat]/Strongly Correlated Electrons [cond-mat.str-el]
Published
2021

22. Lattice contraction induced by resistive switching in chromium-doped V2O3: a hallmark of Mott physics

Author

Babich, D, Tranchant, J, Adda, C, Corraze, B, Besland, M.-P, Warnike, P, Bedau, D, Bertoncini, P, Mevellec, J.-Y, Humbert, B, Rupp, J, Hennen, T, Wouters, D, Llopis, R, Cario, L, Janod, E, Institut des Matériaux Jean Rouxel (IMN), Université de Nantes, CNRS, 2 rue de la Houssinière, BP 32229, 44322 Nantes cedex 3, France, CICNanoGUNE, The Swiss Light Source (SLS) (SLS-PSI), Paul Scherrer Institute (PSI), Université de Nantes, CNRS, Institut des Matériaux Jean Rouxel, IMN, F-44000 Nantes, France, and Institut für Werkstoffe der Elektrotechnik II and Jülich-Aachen Research Alliance on Fundamentals of Information Technology (JARA-FIT), RWTH Aachen University, D-52056 Aachen, Germany

Subjects
Condensed Matter - Strongly Correlated Electrons, Condensed Matter - Materials Science, Strongly Correlated Electrons (cond-mat.str-el), [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Materials Science (cond-mat.mtrl-sci), FOS: Physical sciences, [PHYS.COND.CM-SCE]Physics [physics]/Condensed Matter [cond-mat]/Strongly Correlated Electrons [cond-mat.str-el]
Abstract

Since the beginnings of the electronic age, a quest for ever faster and smaller switches has been initiated, since this element is ubiquitous and foundational in any electronic circuit to regulate the flow of current. Mott insulators are promising candidates to meet this need as they undergo extremely fast resistive switching under electric field. However the mechanism of this transition is still under debate. Our spatially-resolved {\mu}-XRD imaging experiments carried out on the prototypal Mott insulator (V0.95Cr0.05)2O3 show that the resistive switching is associated with the creation of a conducting filamentary path consisting in an isostructural compressed phase without any chemical nor symmetry change. This clearly evidences that the resistive switching mechanism is inherited from the bandwidth-controlled Mott transition. This discovery might hence ease the development of a new branch of electronics dubbed Mottronics., Comment: 14 pages, 5 figures + Supplementary Materials (14 pages, 7 figures)

Published
2021
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25. Nanosession: Mott Insulators and Transitions

Author

Nakano, Masaki, primary, Shibuya, Keisuke, additional, Okuyama, Daisuke, additional, Hatano, Takafumi, additional, Ono, Shimpei, additional, Kawasaki, Masashi, additional, Iwasa, Yoshihiro, additional, Tokura, Yoshinori, additional, Corraze, B., additional, Janod, E., additional, Dorolti, E., additional, Guiot, V., additional, Vaju, C., additional, Koo, H.-J., additional, Kan, E., additional, Whangbo, M.-H., additional, Cario, L., additional, Zhang, Guoren, additional, Gorelov, Evgeny, additional, Koch, Erik, additional, Pavarini, Eva, additional, Carmelo, J. M. P., additional, Araújo, M. A. N., additional, White, S. W., additional, Gerber, Simon, additional, Egetenmeyer, Nikola, additional, Gavilano, Jorge, additional, Ressouche, Eric, additional, Niedermayer, Christof, additional, Bianchi, Andrea, additional, Movshovich, Roman, additional, Bauer, Eric, additional, Sarrao, John, additional, Thompson, Joe, additional, Kenzelmann, Michel, additional, Kovacik, Roman, additional, Ederer, Claude, additional, Werner, Philipp, additional, Char, Kookrin, additional, Kim, Kee Hoon, additional, Kim, Hyung Joon, additional, Kim, Useong, additional, Kim, Hoon Min, additional, Kim, Tai Hoon, additional, Mun, Hyo Sik, additional, Jeon, Byung-Gu, additional, Hong, Kwang Taek, additional, Lee, Woong-Jhae, additional, and Ju, Chanjong, additional

Published
2013
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26. Poster: Memristive Systems

Author

Ho Yoon, Jung, primary, Jung, Hyung-Suk, additional, Hwan Lee, Min, additional, Hwan Kim, Gun, additional, Ji Song, Seul, additional, Yeong Seok, Jun, additional, Jean Yoon, Kyung, additional, Seong Hwang, Cheol, additional, Besland, M.-P., additional, Tranchant, J., additional, Souchier, E., additional, Moreau, P., additional, Salmon, S., additional, Corraze, B., additional, Janod, E., additional, Cario, L., additional, Zazpe, Raúl, additional, Ungureanu, Mariana, additional, Llopis, Roger, additional, Golmar, Federico, additional, Stoliar, Pablo, additional, Casanova, Félix, additional, Eduardo Hueso, Luis, additional, Hermes, C., additional, Wimmer, M., additional, Menzel, S., additional, Fleck, K., additional, Rana, V., additional, Salinga, M., additional, Böttger, U., additional, Bruchhaus, R., additional, Wuttig, M., additional, Waser, R., additional, Lentz, F., additional, Rösgen, B., additional, Selle, T., additional, Marchewka, Astrid, additional, Menzel, Stephan, additional, Böttger, Ulrich, additional, Waser, Rainer, additional, Hoskins, Brian, additional, Alibart, Fabien, additional, Strukov, Dmitri, additional, Pellegrino, Luca, additional, Manca, Nicola, additional, Kanki, Teruo, additional, Tanaka, Hidekazu, additional, Biasotti, Michele, additional, Bellingeri, Emilio, additional, Sergio Siri, Antonio, additional, Marré, Daniele, additional, M. Padilha, Antonio Claudio, additional, Martini Dalpian, Gustavo, additional, Reily Rocha, Alexandre, additional, Prodromakis, Themistoklis, additional, Salaoru, Iulia, additional, Khiat, Ali, additional, Toumazou, Christopher, additional, Gale, Ella M., additional, Madhavan, A., additional, Adam, G., additional, Alibart, F., additional, Gao, L., additional, Strukov, D. B., additional, Wamwangi, D., additional, Welnic, W., additional, Gholipour, Behrad, additional, Huang, Chung-Che, additional, Anastasopoulos, Alexandros, additional, Al-Saab, Feras, additional, Hayden, Brian E., additional, Hewak, Daniel W., additional, Lan, Rui, additional, Endo, Rie, additional, Kuwahara, Masashi, additional, Kobayashi, Yoshinao, additional, Susa, Masahiro, additional, Baumeister, Paul, additional, Wortmann, Daniel, additional, Blügel, Stefan, additional, Mazzarello, Riccardo, additional, Li, Yan, additional, Zhang, Wei, additional, Ronneberger, Ider, additional, Simon, Ronnie, additional, Gallus, Jens, additional, Bessas, Dimitrios, additional, Sergueev, Ilya, additional, Wille, Hans-Christian, additional, Pierre Hermann, Raphaël, additional, Luckas, Jennifer, additional, Rausch, Pascal, additional, Krebs, Daniel, additional, Zalden, Peter, additional, Boltz, Janika, additional, Raty, Jean-Yves, additional, Salinga, Martin, additional, Longeaud, Christophe, additional, Wuttig, Matthias, additional, Kim, Haeri, additional, Kim, Dong-Wook, additional, Phark, Soo-Hyon, additional, Hong, Seungbum, additional, Park, C., additional, Herpers, A., additional, Verbeeck, J., additional, Egoavil, R., additional, Borgatti, F., additional, Panaccione, G., additional, Offi, F., additional, Dittmann, R., additional, Clima, Sergiu, additional, Sankaran, Kiroubanand, additional, Mees, Maarten, additional, Yin Chen, Yang, additional, Goux, Ludovic, additional, Govoreanu, Bogdan, additional, Wouters, Dirk J., additional, Kittl, Jorge, additional, Jurczak, Malgorzata, additional, Pourtois, Geoffrey, additional, Calka, P., additional, Martinez, E., additional, Delaye, V., additional, Lafond, D., additional, Audoit, G., additional, Mariolle, D., additional, Chevalier, N., additional, Grampeix, H., additional, Cagli, C., additional, Jousseaume, V., additional, Guedj, C., additional, Shrestha, Pragya, additional, Ochia, Adaku, additional, Cheung, Kin. P., additional, Campbell, Jason, additional, Baumgart, Helmut, additional, Harris, Gary, additional, Scherff, Malte, additional, Meyer, Bjoern, additional, Scholz, Julius, additional, Hoffmann, Joerg, additional, Jooss, Christian, additional, Xiao, Bo, additional, Tada, Tomofumi, additional, Gu, Tingkun, additional, Tawara, Arihiro, additional, Watanabe, Satoshi, additional, Young, Tai-Fa, additional, Yang, Ya-Liang, additional, Chang, Ting-Chang, additional, Hsu, Kuang-Ting, additional, Chen, Chao-Yu, additional, Burkert, A, additional, Valov, I., additional, Staikov, G., additional, van den Hurk, Jan, additional, Valov, Ilia, additional, Tappertzhofen, Stefan, additional, van der Hurk, Jan, additional, Hoskins, B., additional, Kim, Gun Hwan, additional, Seok, Jun Yeong, additional, Ho Yoon, Jeong, additional, Yoon, Jung Ho, additional, Yoon, Kyung Jin, additional, Shuai, Yao, additional, Wu, Chuangui, additional, Zhang, Wanli, additional, Zhou, Shengqiang, additional, Bürger, Danilo, additional, Slesazeck, Stefan, additional, Mikolajick, Thomas, additional, Helm, Manfred, additional, Schmidt, Heidemarie, additional, Gale, Ella, additional, Pearson, David, additional, Kitson, Stephen, additional, Adamatzky, Andrew, additional, Costello, Ben de Lacy, additional, Lehtonen, Eero, additional, Poikonen, Jussi, additional, Laiho, Mika, additional, Kanerva, Pentti, additional, Lim, Hyungkwang, additional, Jang, Ho-won, additional, Jeong, Doo Seok, additional, Cao, Xun, additional, Jiang, Meng, additional, Zhang, Feng, additional, Liu, Xinjun, additional, Jin, Ping, additional, Zhang, Kai, additional, Tangirala, Madhavi, additional, Kittiwatanakul, Salinporn, additional, Lu, Jiwei, additional, Wolf, Stuart, additional, Pallem, Venkateswara, additional, Dussarrat, Christian, additional, Pinto, S., additional, Krishna, R., additional, Dias, C., additional, Pimentel, G., additional, Oliveira, G. N. P., additional, Teixeira, J. M., additional, Aguiar, P., additional, Titus, E., additional, Gracio, J., additional, Ventura, J., additional, and Araujo, J. P., additional

Published
2013
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28. On the origin of the (square root of) 7 by (square root of ) 7 superstructure and the anomalous magnetic and transport properties of the layered compound Sr (sub)6 V (sub)9 S (sub)22 O (sub)2

Author

Gourdon, O., Evain, M., Brec, R., Koo, H.-J., Whangbo, M.-H., Corraze, B., Chauvet, O., and Jobic, S.

Subjects
Chemistry, Inorganic -- Research, Strontium -- Physiological aspects, Vanadium -- Physiological aspects, Sulfur -- Physiological aspects, Oxygen -- Physiological aspects, Metal bonding -- Analysis, Chemistry
Abstract

Research has been conducted on the layered compound Sr (sub)6 V (sub)9 S (sub)22 O (sub)2. The use of the electronic band structure calculations and metal-metal bonding across the shared edges of the octahedra in investigating the (square root of) 7 by (square root of ) 7 superstructure of this compound is discussed.

Published
2001

34. Incommensurate charge-density-waves as seen by time-resolved x-ray diffraction

Author

Ravy, Sylvain, primary, Lauhé, C., additional, Huber, T., additional, Ferrer, A., additional, Lantz, G., additional, Jacques, V. L. R., additional, Le Bolloc'h, D., additional, Marlager, S. O., additional, Carlo, L., additional, Corraze, B., additional, Janod, E., additional, Ingold, G., additional, Beaud, P., additional, and Johnson, S. L., additional

Published
2018
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36. Ultrafast Formation of a Charge Density Wave State in 1T−TaS2 : Observation at Nanometer Scales Using Time-Resolved X-Ray Diffraction

Author

Laulhé, C., primary, Huber, T., additional, Lantz, G., additional, Ferrer, A., additional, Mariager, S. O., additional, Grübel, S., additional, Rittmann, J., additional, Johnson, J. A., additional, Esposito, V., additional, Lübcke, A., additional, Huber, L., additional, Kubli, M., additional, Savoini, M., additional, Jacques, V. L. R., additional, Cario, L., additional, Corraze, B., additional, Janod, E., additional, Ingold, G., additional, Beaud, P., additional, Johnson, S. L., additional, and Ravy, S., additional

Published
2017
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38. First-Order Insulator-to-Metal Mott Transition in the Paramagnetic 3D System GaTa4Se8

Author

Camjayi, Alberto, Acha, Carlos Enrique, Weht, Ruben Oscar, Rodríguez, M. G., Corraze, B., Janod, E., Cario, L., and Rozenberg, Marcelo Javier

Subjects
purl.org/becyt/ford/1 [https], First Order Transition, Condensed Matter - Strongly Correlated Electrons, Strongly Correlated Electrons (cond-mat.str-el), Resistivity, FOS: Physical sciences, Condensed Matter::Strongly Correlated Electrons, purl.org/becyt/ford/1.3 [https], Mott Insulator, High Pressure
Abstract

The nature of the Mott transition in the absence of any symmetry braking remains a matter of debate. We study the correlation-driven insulator-to-metal transition in the prototypical 3D Mott system GaTa4Se8, as a function of temperature and applied pressure. We report novel experiments on single crystals, which demonstrate that the transition is of first order and follows from the coexistence of two states, one insulating and one metallic, that we toggle with a small bias current. We provide support for our findings by contrasting the experimental data with calculations that combine local density approximation with dynamical mean-field theory, which are in very good agreement., 5 pages and 4 figures. Supplemental material: 2 pages, 2 figures

Published
2014

39. Relation between Thermally Induced Structural Distortions and Electronic Properties of the Layered Misfit Chalcogenide (LaS)of the Layered Misfit Chalcogenide (LaS)1.196VS2

Author

Ta-Phuoc, Vinh, Brouet, V., Corraze, B., Janod, E., Zaghrioui, Mustapha, Cario, L., GREMAN (matériaux, microélectronique, acoustique et nanotechnologies) (GREMAN - UMR 7347), Institut National des Sciences Appliquées - Centre Val de Loire (INSA CVL), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université de Tours (UT)-Centre National de la Recherche Scientifique (CNRS), Laboratoire de Physique des Solides (LPS), Centre National de la Recherche Scientifique (CNRS)-Université Paris-Sud - Paris 11 (UP11), Université de Tours-Institut National des Sciences Appliquées - Centre Val de Loire (INSA CVL), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), and Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS)

Subjects
structural properties, Electronic Properties, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Condensed Matter::Strongly Correlated Electrons
Abstract

International audience; Interplay between electronic and structural properties of the misfit layered chalcogenide (LaS)(1.196)VS2 crystals was investigated by transport, optical measurements, angle-resolved photoemission (ARPES), Raman spectroscopy, and X-ray diffraction. Although no clear anomaly is found in temperature-dependent transport measurements, a large spectral weight transfer, around 1 eV, is observed by both optical and photoemission spectroscopies. ARPES reveals a nearly filled band with negative curvature, close enough from the Fermi level at room temperature to produce metallic-like behavior as observed in optical conductivity spectra. At low temperature, the band structure is strongly modified, yielding to an insulating state with an optical gap of 120 meV. Both Raman spectroscopy and accurate (3 + 1)D analysis of X-ray diffraction data show that, although a phase transition does not occur, structural distortions increase as temperature is decreased, and vanadium clusterization is enhanced. We found that the changes of electronic properties and structure are intimately related. This indicates that structural distortion plays a major role in the insulating nature of (LaS)(1.196)VS2 and that electronic correlation may not be important, contrary to previous beliefs.

Published
2014

41. Optical Conductivity Measurements of GaTa4Se8 Under High Pressure: Evidence of a Bandwidth-Controlled Insulator-to-Metal Mott Transition

Author

Ta Phuoc, V., Vaju, C., Corraze, B., Sopracase, R., Perucchi, A., Marini, C., Postorino, P., Chligui, M., Lupi, S., Etienne JANOD, Cario, L., GREMAN (matériaux, microélectronique, acoustique et nanotechnologies) (GREMAN - UMR 7347), Université de Tours-Institut National des Sciences Appliquées - Centre Val de Loire (INSA CVL), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Institut des Matériaux Jean Rouxel (IMN), Université de Nantes - UFR des Sciences et des Techniques (UN UFR ST), Université de Nantes (UN)-Université de Nantes (UN)-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Ecole Polytechnique de l'Université de Nantes (EPUN), Université de Nantes (UN)-Université de Nantes (UN), Elettra Sincrotrone Trieste, Università di Roma 'La Sapienza', Dipartimento di Fisica, Università degli Studi di Roma 'La Sapienza' = Sapienza University [Rome], and Université de Tours (UT)-Institut National des Sciences Appliquées - Centre Val de Loire (INSA CVL)

Subjects
[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Condensed Matter::Strongly Correlated Electrons
Abstract

International audience; The optical properties of a GaTa(4)Se(8) single crystal are investigated under high pressure. At ambient pressure, the optical conductivity exhibits a charge gap of ≈0.12 eV and a broad midinfrared band at ≈0.55 eV. As pressure is increased, the low energy spectral weight is strongly enhanced and the optical gap is rapidly filled, pointing to an insulator to metal transition around 6 GPa. The overall evolution of the optical conductivity demonstrates that GaTa(4)Se(8) is a Mott insulator which undergoes a bandwidth-controlled Mott metal-insulator transition under pressure, in remarkably good agreement with theory. With the use of our optical data and ab initio band structure calculations, our results were successfully compared to the (U/D, T/D) phase diagram predicted by dynamical mean field theory for strongly correlated systems.

Published
2013

47. Ultrafast filling of an electronic pseudogap in an incommensurate crystal

Author

Brouet, V., primary, Mauchain, J., additional, Papalazarou, E., additional, Faure, J., additional, Marsi, M., additional, Lin, P. H., additional, Taleb-Ibrahimi, A., additional, Le Fèvre, P., additional, Bertran, F., additional, Cario, L., additional, Janod, E., additional, Corraze, B., additional, Phuoc, V. Ta, additional, and Perfetti, L., additional

Published
2013
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50. Nanosession: Variants of Resistive Switching

Author

Sawa, Akihito, primary, Tsurumaki‐Fukuchi, Atsushi, additional, Yamada, Hiroyuki, additional, Rodenbücher, Christian, additional, Szot, Krzysztof, additional, Waser, Rainer, additional, Lee, Shin Buhm, additional, Park, Jong‐Bong, additional, Lee, Myoung‐Jae, additional, Noh, Tae Won, additional, Rozenberg, Marcelo J., additional, Sánchez, María J., additional, Stoliar, Pablo, additional, Weht, Ruben, additional, Acha, Carlos, additional, Gomez‐Marlasca, Fernando, additional, Levy, Pablo, additional, Cario, L., additional, Corraze, B., additional, Guiot, V., additional, Salmon, S., additional, Tranchant, J., additional, Besland, M.‐P., additional, Phuoc, V. Ta, additional, Rozenberg, M., additional, Cren, T., additional, Roditchev, D., additional, Janod, E., additional, Schmeißer, Dieter, additional, Richter, Matthias, additional, Tallarida, Massimo, additional, Long, Shibing, additional, Gagli, Carlo, additional, Cartoixà, Xavier, additional, Rurali, Riccardo, additional, Miranda, Enrique, additional, Jiménez, David, additional, Buckley, Julien, additional, Liu, Ming, additional, and Suñé, Jordi, additional

Published
2012
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