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The asteroid (16) Psyche is the target of the NASA Psyche mission, where the magnetometer is one of the three science instruments on board. Its purpose is to prove whether the asteroid formed from the core of a differentiated planetesimal. The magnetometer will measure the magnetic field at different distances from the asteroid in order to detect any remanent magnetization, where a magnetic moment larger than 2×10^14 Am2 could imply that the body once generated a core dynamo, and therefore formed as an igneous differentiation.The Psyche spacecraft carries two three-axis fluxgate magnetometers mounted on a fixed boom at 2.15m and 1.45m, respectively, which provide redundancy and gradiometer capabilities to compensate for spacecraft-generated magnetic fields. The magnetometers will be powered on early in the initial checkout phase and remain on throughout cruise and orbital operations and producing 50 vectors per second. The in-flight temperature of the magnetometers is expected to span a large range, therefore an extensive calibration program has been carried out in order to characterize the instruments and prove the performance pre-flight.

We report on the architecture and performance of a highly sensitive 95 GHz Doppler radar instrument with 0.6Watt transmit power designed for low power consumption and small size. The radar’s sensitivity is validated using a calibration target, and its remote sensing capabilities are demonstrated through the detection of clouds, rain, insects, and distant vehicles. The radar uses a frequency-modulated continuous-wave (FMCW) waveform, a single antenna with ultra-high-isolation quasioptical transmit/receive duplexing, an InP low-noise amplifier for receiving, and a GaN power amplifier for transmitting. A DC power consumption of 22 W for the RF and digital subsystems is achieved, in part, by a combination of a power-efficient waveform generation/detection and signal processing board and a CMOS-based system-on-chip W-band oscillator. Excluding power supplies and a computer interface, the radar system mass is under 6 kg, making it attractive for future deployment from platforms with constrained accommodation resources.

Some icy moons and small bodies in the solar system are believed to host subsurface liquid water oceans. The interaction of these saline, electrically conductive oceans with time-varying external magnetic fields generates induced magnetic fields. Magnetometry observations of these induced fields in turn enable the detection and characterization of these oceans. We present a framework for characterizing the interiors of icy moons using multi-frequency induction and Bayesian inference applied to magnetometry measurements anticipated from the upcoming Europa Clipper mission. Using simulated data from the Europa Clipper Magnetometer (ECM), our approach can accurately retrieve a wide range of plausible internal structures for Europa. In particular, the ocean conductivity is recovered to within ${\pm}50\%$ for all internal structure scenarios considered and the ocean thickness can be retrieved to within ${\pm}25~\mathrm{km}$ for five out of seven scenarios. Characterization of the ice shell thickness to ${\pm}50\%$ is possible for six of seven scenarios. Our recovery of the ice shell thickness is highly contingent on accurate modeling of magnetic fields arising from the interaction of Europa with the ambient magnetospheric plasma, while the ocean thickness is more modestly affected and the ocean conductivity retrieval is largely unchanged. Furthermore, we find that the addition of a priori constraints (e.g., static gravity measurements) can yield improved ocean characterization compared to magnetometry alone, suggesting that multi-instrument techniques can play a key role in revealing the interiors of Europa and other ocean worlds., Comment: 18 pages, 16 figures, submitted to Planetary Science Journal

The Galileo mission to Jupiter discovered magnetic signatures associated with hidden sub-surface oceans at the moons Europa and Callisto using the phenomenon of magnetic induction. These induced magnetic fields originate from electrically conductive layers within the moons and are driven by Jupiter’s strong time-varying magnetic field. The ice giants and their moons are also ideal laboratories for magnetic induction studies. Both Uranus and Neptune have a strongly tilted magnetic axis with respect to their spin axis, creating a dynamic and strongly variable magnetic field environment at the orbits of their major moons. Although Voyager-2 visited the ice giants in the 1980s, it did not pass close enough to any of the moons to detect magnetic induction signatures. However, Voyager-2 revealed that some of these moons exhibit surface features that hint at recent geologically activity, possibly associated with sub-surface oceans. Future missions to the ice giants may therefore be capable of discovering sub-surface oceans, thereby adding to the family of known “ocean worlds” in our solar system. Here, we assess magnetic induction as a technique for investigating sub-surface oceans within the major moons of Uranus. Furthermore, we establish the ability to distinguish induction responses created by different interior characteristics that tie into the induction response: ocean thickness, conductivity, and depth, and ionospheric conductance. The results reported here demonstrate the possibility of single-pass ocean detection and constrained characterization within the moons of Miranda, Ariel, and Umbriel, and provide guidance for magnetometer selection and trajectory design for future missions to Uranus.

In this study we report on the current state-of-progress of the Water Sounding Short-range Radar (WASSR) project. The proposed WASSR instrument will facilitate estimation of near-surface water vapor profile on Mars. This project is supported under NASA's Maturation of Instruments for Solar System Exploration (MatISSE) program and is a frequency modulated continuous wave (FMCW) differential absorption radar (DAR) instrument. The scope of the work presented here includes a discussion of (i) the science background and motivation for profiling water vapor near the Martian surface, (ii) the differential absorption radar (DAR) technique implemented at the 557 GHz water vapor absorption line, and (iii) the submillimeter wave radar system implementation and characterization.

We have significantly refined an adaptive signal averaging approach developed primarily for continuous wave electron paramagnetic resonance and electrically detected magnetic resonance measurements. This refinement overcomes several limitations and greatly simplifies the earlier approach. The new technique provides a large improvement in tracking and numerical stability and also features fewer adjustable parameters making this approach more user intuitive.

To date, analyses of magnetic induction in putative oceans in Jupiter's large icy moons have assumed uniform conductivity in the modeled oceans. However, the phase and amplitude response of the ind...

We explore the magnetic sensing capabilities of two 4H-SiC n+p diodes fabricated by NASA Glenn which only differ in the implanted ion species, nitrogen and phosphorus, and the implant activation annealing time. We use low-and high-field electrically detected magnetic resonance (EDMR) to investigate the defect structure used to sense magnetic fields as well as to evaluate the sensitivity. In addition, we expose these devices to high energy electron radiation to evaluate the defect sensing capability in a harsh radiation environment. The results from this work will allow us to tailor our processing methods to design a more optimal 4H-SiC pn diode for magnetic field sensing in harsh environments.

Most applications of frequency-modulated continuous-wave radar described in the literature involve targets that are in relatively close proximity to the radar. In these cases, the round-trip travel time of the target’s radar signature is small relative to the transmit chirp duration, simplifying the processing required for range and velocity extraction. This is not the case for more distant targets, where much of the radar signature is received after the start of the subsequent transmit waveform. In this letter, we examine various signal-processing options for coping with this long-range condition. We analytically demonstrate how to retain both range and Doppler shift information for an arbitrary number of targets spaced anywhere from very near the target up to the radar’s unambiguous range. The motivation for this work is to develop a 95-GHz Doppler radar for measuring ice and dust particle dynamics in cometary jets. Simulations and experimental results are provided to validate our methods.

With the public and scientific community’s growing interest in ocean worlds, the icy moons of Uranus offer an ideal opportunity to explore a native ice giant satellite system. Although it is uncertain whether any of the Uranian moons currently host subsurface oceans, there is tantalizing evidence—including geologically young surface features and volatiles that are not stable—that this could be the case, making these objects possible ocean worlds in their own right. Determining whether subsurface oceans are present in the interiors of these moons would increase our understanding of the conditions under which subsurface oceans are formed and maintained over the history of the solar system. The presence and stability of a subsurface ocean in the interiors of any icy body is key to identifying its potential as a habitable environment. In this work, we describe a midsize (New Frontiers class) mission concept: the Uranian Magnetosphere and Moons Investigator. The magnetosphere and moons are tightly coupled parts of the Uranian system, complementary to study, and best analyzed together in order to investigate the Uranian moons as potential ocean worlds. Additionally, this mission concept includes study of Uranus’s unique rings and magnetosphere–solar wind interaction. With a future, more detailed trade study, there also could be opportunities for studies of Uranus itself.

Silicon carbide (SiC) is well known by the semiconductor industry to have significant potential for electronics used in high temperature environments due to its wide bandgap. It is not so well-known, however, that SiC also has great potential in the area of magnetic field sensing. Using the recently demonstrated zero-field spin dependent recombination (SDR) phenomenon that naturally arises in SiC based devices, near-zero magnetic field measurements can be made with moderately high sensitivity.

We present the first demonstration of a thermal-noise-limited 95 GHz frequency modulated continuous wave (FMCW) Doppler radar with high (1 Watt) transmit power and long-range Doppler detection capabilities. The 95 GHz radar is part of the GAISR (Gas And Ice Spectrometer/Radar) instrument to probe the dynamics and distribution of cometary jets and plumes in icy bodies in the solar system. Radar measurements were carried out using a variety of targets at different range and velocities, such as freeway cars, clouds, rain and hillsides, to test the range and Doppler capabilities. The compact design (a single 15 cm diameter primary antenna), and high quality data presented in this paper makes this 95 GHz FMCW radar uniquely suitable for future space missions for Planetary and Earth Science applications.

A 95 GHz Doppler radar prototype has been developed with a design guided by requirements for potential space flight missions to comets or icy moons of the outer planets in order to probe ice- and dust-filled jets and plumes. The radar operates in a frequency-modulated continuous-wave (FMCW) mode with a bandwidth, pulse repetition interval, and coherent integration time chosen to achieve better than 10 m range resolution, 0.1 m/s velocity resolution, 5.1 km maximum unambiguous range, and 46 m/s maximum unambiguous velocity span. With an ultra-high transmit/receive isolation exceeding 85 dB, the radar operates with thermal-noise-limited sensitivity even with 1 Watt of continuous transmit power and a 540 K noise-temperature receiver sharing a single, 15 cm diameter monostatic aperture. Experimental testing has verified the radar's range-Doppler remote sensing capabilities using a developing rain shower as a dynamic and distributed target.

In this paper, an exceptionally sensitive form of electron paramagnetic resonance called electrically detected magnetic resonance (EDMR) is utilized to investigate performance limiting imperfections at and very near the interface of 4H-silicon carbide MOSFETs. EDMR measurements are made over an extremely wide range of frequencies, 16 GHz–350 MHz. Multiple interface/near interface defects are identified and strong evidence for significant disorder at the interface region is presented.

Silicon carbide based transistors have great promise in high temperature and high power applications. In particular, the great promise of silicon carbide based metal oxide semiconductor field effect transistors (MOSFETs) has been somewhat limited by materials physics problems in the region near the silicon carbide-silicon dioxide interface. Materials physics problems in SiC bipolar junction transistors (BJTs) are also topics of current interest. Studies involving a combination of high, low, and zero field electrically detected magnetic resonance via spin dependent recombination provide a powerful approach for the understanding of SiC transistor materials physics problems. In this paper, we will review our group’s work on multi-field spin dependent recombination of 4H SiC based MOSFETs and BJTs. We emphasize the physical principles involved in the measurements in part because they could potentially be quite useful if they were to be applied to other wide band gap semiconductor device systems.

Magnetometers are essential for scientific investigation of planetary bodies and are therefore ubiquitous on missions in space. Fluxgate and optically pumped atomic gas based magnetometers are typically flown because of their proven performance, reliability, and ability to adhere to the strict requirements associated with space missions. However, their complexity, size, and cost prevent their applicability in smaller missions involving cubesats. Conventional solid-state based magnetometers pose a viable solution, though many are prone to radiation damage and plagued with temperature instabilities. In this work, we report on the development of a new self-calibrating, solid-state based magnetometer which measures magnetic field induced changes in current within a SiC pn junction caused by the interaction of external magnetic fields with the atomic scale defects intrinsic to the semiconductor. Unlike heritage designs, the magnetometer does not require inductive sensing elements, high frequency radio, and/or optical circuitry and can be made significantly more compact and lightweight, thus enabling missions leveraging swarms of cubesats capable of science returns not possible with a single large-scale satellite. Additionally, the robustness of the SiC semiconductor allows for operation in extreme conditions such as the hot Venusian surface and the high radiation environment of the Jovian system.

A combination 95 GHz radar and 270/560 GHz spectrometer is being built as a space instrument prototype for probing plumes and jet phenomena in the solar system. Dubbed GAISR (Gas And Ice Spectrometer/Radar), the instrument's radar will make simultaneous range/Doppler measurements of 0.1–10 mm sized ice and dust particles out to a few km in range, while its tunable spectrometer will detect the abundance and velocities of gaseous water and other volatiles. Here we describe how the radar and spectrometer share a back-end architecture, and present some innovative elements of GAISR's frequency-modulated continuous-wave (FMCW) radar, including high-isolation and low-loss transmit/receive duplexing and a phase-noise-canceling RF architecture.

Magnetometers are essential for scientific investigation of planetary bodies and are therefore ubiquitous on missions in space. Fluxgate and optically pumped atomic gas based magnetometers are typically flown because of their proven performance, reliability, and ability to adhere to the strict requirements associated with space missions. However, their complexity, size, and cost prevent their applicability in smaller missions involving cubesats. Conventional solid-state based magnetometers pose a viable solution, though many are prone to radiation damage and plagued with temperature instabilities. In this work, we report on the development of a new self-calibrating, solid-state based magnetometer which measures magnetic field induced changes in current within a SiC pn junction caused by the interaction of external magnetic fields with the atomic scale defects intrinsic to the semiconductor. Unlike heritage designs, the magnetometer does not require inductive sensing elements, high frequency radio, and/or optical circuitry and can be made significantly more compact and lightweight, thus enabling missions leveraging swarms of cubesats capable of science returns not possible with a single large-scale satellite. Additionally, the robustness of the SiC semiconductor allows for operation in extreme conditions such as the hot Venusian surface and the high radiation environment of the Jovian system.

We utilize electrically detected magnetic resonance (EDMR) via spin dependent recombination (SDR) to provide a definitive identification of an interface/near interface defect present in a wide variety of 4H SiC/SiO2 metal oxide semiconducting field effect transistors (MOSFETs).

There is significant interest in the development of new dielectrics and new semiconductor/dielectric systems. Of particular interest are new materials for metal oxide field effect transistor systems and new materials for interlayer dielectrics. The electronic defects which limit the performance of these new material systems are largely unknown. Electron paramagnetic resonance (EPR) has unrivaled analytical power for the identification of the physical and chemical nature of trapping centers in semiconductors and insulators (1). However, the sensitivity of conventional EPR is orders of magnitude too low to make measurements in most present day solid state devices. Two electrically detected magnetic resonance (EDMR) techniques, spin dependent recombination (SDR) and spin dependent trap assisted tunneling (SDT) provide the same analytical power as conventional EPR but, in addition, offer a sensitivity many orders of magnitude higher. This enhanced sensitivity allows measurements to be made in essentially “state of the art” device structures and provide several other significant advantages. EDMR can, under some circumstances, provide information about the physical location and energy levels of deep level defects which play important roles in electronic devices. In this presentation, I’ll discuss EDMR results on low-K dielectric constant films (2), on high-K dielectric films on silicon (3), on near interface/interface traps in SiC MOSFET gate dielectrics (4), on defects which play dominating roles in stress induced leakage currents (5) and the negative bias temperature instability (6) in essentially “state of the art” plasma nitrided oxides in silicon based pMOSFETs. I will also show how energy resolved SDT can provide fairly precise measurements of dielectric defect energy levels and show how the SDR response as a function of gate voltage can provide qualitative information about the physical distribution of interface/near interface defects. ACKNOWLDEGEMENTS Work supported by Intel Corporation, U.S. Army Research Laboratory, GE Global Research, and NIST.

We show that electrically detected magnetic resonance (EDMR), through spin dependent trap assisted tunneling (SDTT) in amorphous SiC, exhibits approximately equal amplitudes at very high (8.5 T) and very low (0.013 T) magnetic fields at room temperature. This result strongly supports an SDTT/EDMR model in which spins at two nearby sites involved in a tunneling event are coupled for a finite time in circumstances somewhat analogous to spin pair coupling in the spin dependent recombination/EDMR model of Kaplan, Solomon, and Mott (KSM) [Kaplan, Solomon, and Mott, J. Phys. Lett. 39, 51 (1978)]. Since a comparable near zero magnetic field change in resistance is also observed in these samples, our results support the idea that this magnetoresistance response is also the result of a KSM-like mechanism involving SDTT. Additionally, we observe a large enhancement in SDTT/EDMR at high field (8.5 T) for temperatures below 50 K, which suggests the potential utility of SDTT in spin based quantum computation and other spintronic applications.

We have extended a magnetic resonance based study of MOS devices to include electrically detected magnetic resonance (EDMR) measurements of fully processed MOSFETs from three facilities as well as conventional electron paramagnetic resonance (EPR) resonance measurements on simple SiC/SiO2 structures. We find close similarity between the conventional EPR and the EDMR spectra.

We have identified a magnetic resonance spectrum associated with minority carrier lifetime killing defects in device quality 4H SiC.

We present recent developments in time-resolved Raman spectroscopy instrumentation and measurement techniques for in situ planetary surface exploration, leading to improved performance and identification of minerals and organics. The time-resolved Raman spectrometer uses a 532 nm pulsed microchip laser source synchronized with a single photon avalanche diode array to achieve sub-nanosecond time resolution. This instrument can detect Raman spectral signatures from a wide variety of minerals and organics relevant to planetary science while eliminating pervasive background interference caused by fluorescence. We present an overview of the instrument design and operation and demonstrate high signal-to-noise ratio Raman spectra for several relevant samples of sulfates, clays, and polycyclic aromatic hydrocarbons. Finally, we present an instrument design suitable for operation on a rover or lander and discuss future directions that promise great advancement in capability.

This paper examines the atomic-scale defects involved in a metal-oxide-silicon field-effect-transistor reliability problem called the negative-bias temperature instability (NBTI). NBTI has become the most important reliability problem in modern complementary-metal-oxide-silicon technology. Despite 40 years of research, the defects involved in this instability were undetermined prior to this paper. We combine DC gate-controlled diode measurements of interface-state density with two very sensitive electrically detected magnetic-resonance measurements called spin-dependent recombination (SDR) and spin-dependent tunneling (SDT). An analysis of these measurements provides an identification of the dominating atomic-scale defects involved in NBTI in pure- and plasma-nitrided oxide (PNO)-based devices. We are also able to observe atomic-scale defects involved in HfO2-based devices (although a definitive identification of the dominating defects structure was not possible). Our results in pure- devices indicate an NBTI mechanism which is dominated by the generation of Pb0 and Pb1 interface-state defects. (Pb0 and Pb1 are both silicon dangling-bond defects, in which the central silicon is back-bonded to three other silicon atoms precisely at the interface). This observation is consistent with what most NBTI researchers have assumed. However, our observations in PNO devices contradict with what most NBTI researchers had previously assumed. We demonstrate that the dominating NBTI-induced defect in the plasma-nitrided devices is fundamentally different than those observed in pure-based devices. Our measurements indicate that the new plasma-nitrided NBTI-induced defect's physical location extends into the gate dielectric. The defect participates in both SDR and SDT. Our SDR results strongly indicate that the plasma-nitrided defect has a density of states which is more narrowly peaked than that of centers and is near the middle of the band gap. The high sensitivity of our SDT measurements allow an identification of the physical and chemical nature of this defect through observations of hyperfine interactions. The defects are silicon dangling bonds, in which the central silicon is back-bonded to nitrogen atoms. We call these NBTI-induced defects centers because of the similarities to the centers observed in silicon nitride (the silicon-nitrided center is also a silicon dangling bond in which the silicon atom is back-bonded to nitrogen atoms). The defect identification in plasma-nitrided devices helps to explain the following phenomena: (1) NBTI's enhancement in plasma-nitrided devices; (2) conflicting reports of NBTI-induced interface states and/or bulk traps; and (3) fluorine's ineffectiveness in reducing NBTI in plasma-nitrided devices. We also observe the atomic-scale defects involved in NBTI in HfO2-based devices and find that short- and long-term stressing generates different defects and that these defects are different than those observed in the SiO2 and plasma-nitrided devices. Our results also suggest that the NBTI-induced defects in these devices are physically located in the interfacial layer (not at the interface).

Electrically detected magnetic resonance (EDMR) is a valuable tool for studying a variety of reliability problems, including the negative-bias temperature instability, total ionizing dose radiation damage, and instability in high-K gate stack-based MOS devices. Although conventional high-field EDMR can provide identification of the physical and chemical nature of electrically active reliability dominating defects in microelectronic devices, all of the EDMR studies to date have been limited by one significant shortcoming: EDMR is not quantitative. Although a large EDMR response generally corresponds to a high defect density and a small EDMR response corresponds to a low one, it has not been possible to assign actual numbers to the defect densities detected via EDMR. We've solved this problem.

This work focuses on the use of a zero- and low-field detection technique of spin dependent recombination and spin dependent tunneling used for studying the bias temperature instabilities in MOSFETs and time dependent dielectric breakdown in this film dielectrics.

Electron paramagnetic resonance (EPR) and electrically detected magnetic resonance (EDMR) are extremely useful techniques that are capable of defect detection in semiconductor structures and fully processed devices, respectively. The complexity of conventional EPR and EDMR spectrometers involves utilization of strong (>3000 G) highly uniform magnetic fields (B 0 ) and high frequency (typically 9 GHz) oscillating magnetic fields (B 1 ) or higher. These components are typically expensive and heavy. In this study, we directly demonstrate that, in the absence of both an oscillating magnetic field and a large static magnetic field, spin dependent recombination (SDR) and spin dependent tunneling (SDT) can be detected at zero magnetic field. In this zero-field detection scheme, hyperfine interactions can be detected which allow for the physical identification of the defects responsible for SDR and SDT. However, we sacrifice the evaluation of a resonance parameter, the g-value. We observe the zero-field phenomenon in multiple solid state electronic components including MOSFETs, BJTs, diodes, and capacitors suggesting its usefulness for semiconducting manufacturers to incorporate simple automated low-field/zero-field EDMR spectrometers into wafer fabrication/probing equipment to study the defects in solid-state electronics during fabrication. Because only very low fields are required, low field EDMR can be performed easily and inexpensively.

There is significant interest in the development of new dielectrics and new semiconductor/dielectric systems. Of particular interest are new materials for metal oxide field effect transistor systems and new materials for interlayer dielectrics. The electronic defects which limit the performance of these new material systems are largely unknown. Electron paramagnetic resonance (EPR) has unrivaled analytical power for the identification of the physical and chemical nature of trapping centers in semiconductors and insulators (1). However, the sensitivity of conventional EPR is orders of magnitude too low to make measurements in most present day solid state devices. Two electrically detected magnetic resonance (EDMR) techniques, spin dependent recombination (SDR) and spin dependent trap assisted tunneling (SDT) provide the same analytical power as conventional EPR but, in addition, offer a sensitivity many orders of magnitude higher. This enhanced sensitivity allows measurements to be made in essentially “state of the art” device structures and provide several other significant advantages. EDMR can, under some circumstances, provide information about the physical location and energy levels of deep level defects which play important roles in electronic devices. In this presentation, I’ll discuss EDMR results on low-K dielectric constant films (2), on high-K dielectric films on silicon (3), on near interface/interface traps in SiC MOSFET gate dielectrics (4), on defects which play dominating roles in stress induced leakage currents (5) and the negative bias temperature instability (6) in essentially “state of the art” plasma nitrided oxides in silicon based pMOSFETs. I will also show how energy resolved SDT can provide fairly precise measurements of dielectric defect energy levels and show how the SDR response as a function of gate voltage can provide qualitative information about the physical distribution of interface/near interface defects. ACKNOWLDEGEMENTS Work supported by Intel Corporation, U.S. Army Research Laboratory, GE Global Research, and NIST.

It is well known that 4H silicon carbide (SiC) based metal oxide silicon field effect transistors (MOSFETs) have great promise in high power and high temperature applications. The reliability and performance of these MOSFETs is currently limited by the presence of SiC/SiO 2 interface and near interface traps which are poorly understood. Conventional electron paramagnetic resonance (EPR) studies of silicon samples have been utilized to argue for carbon dangling bond interface traps [1]. For several years, with several coworkers, we have explored these silicon carbide based MOSFETs with electrically detected magnetic resonance (EDMR), [2,3] establishing a connection between an isotropic EDMR spectrum with g=2.003 and deep level defects in the interface/near interface region of SiC MOSFETs. We tentatively linked the spectrum to a silicon vacancy or closely related defect. This assessment was tentative because we were not previously able to quantitatively evaluate the electron nuclear hyperfine interactions at the site. Through multiple improvements in EDMR hardware and data acquisition software, we have achieved a very large improvement in sensitivity and resolution in EDMR, which allows us to detect side peak features in the EDMR spectra caused by electron nuclear hyperfine interactions. This improved resolution allows far more definitive conclusions to be drawn about defect structure. In this work, we provide extremely strong experimental evidence identifying the structure of that defect. The evidence comes from very high resolution and sensitivity “fast passage” (FP) mode [4, 5] electrically detected magnetic resonance (EDMR) or FPEDMR of the ubiquitous EDMR spectrum.

We report on both conventional electron paramagnetic resonance (EPR) measurements of fully processed HfO2 based dielectric films on silicon and on electrically detected magnetic resonance (EDMR) measurements of fully processed HfO2 based MOSFETs. The magnetic resonance measurements indicate the presence of oxygen vacancy and oxygen interstitial defects within the HfO2 and oxygen deficient silicons in the interfacial layer. The EDMR results also indicate the generation of at least two defects when HfO2 based transistors are subjected to significant negative bias at modest temperature. Our results indicate generation of multiple interface/near interface defects, likely involving coupling with nearby hafnium atoms.