3 results on '"Corentin Le Maoult"'
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2. Surface recombinations in III-nitride micro-LEDs probed by photon-correlation cathodoluminescence
- Author
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Sylvain Finot, Corentin Le Maoult, Etienne Gheeraert, David Vaufrey, Gwénolé Jacopin, Semi-conducteurs à large bande interdite (SC2G), Institut Néel (NEEL), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), ANR-15-IDEX-0002,UGA,IDEX UGA(2015), and Semi-conducteurs à large bande interdite (NEEL - SC2G)
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010302 applied physics ,surface recombination ,light-emitting diodes ,diffusion ,cathodoluminescence ,02 engineering and technology ,021001 nanoscience & nanotechnology ,01 natural sciences ,III-nitride ,Atomic and Molecular Physics, and Optics ,Electronic, Optical and Magnetic Materials ,[SPI.TRON]Engineering Sciences [physics]/Electronics ,0103 physical sciences ,[SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic ,carrier dynamics ,Electrical and Electronic Engineering ,0210 nano-technology ,Biotechnology - Abstract
International audience; III-nitride micro-LEDs are promising building blocks for the next generation of high performance micro-displays. To reach a high pixel density, it is desired to achieve micro-LEDs with lateral dimensions below 10 µm. With such pixel downscaling, sidewall effects are becoming important and an understanding of the impact of non-radiative surface recombinations is of vital importance. It is thus required to develop an adapted metric to evaluate the impact of these surface recombinations with a nanoscale spatial resolution. Here, we propose a methodology to quantitatively assess the influence of surface recombinations on the optical properties of InGaN/GaN quantum wells based on spatially-resolved time-correlated cathodoluminescence spectroscopy. By coupling this technique to a simple diffusion model, we confirm that the combination of KOH treatment and Al$_2$O$_3$ passivation layer drastically reduces surface recombinations. These findings emphasize the need for nanoscale time-resolved experiments to quantify the local changes in internal quantum efficiency of micro-devices.
- Published
- 2021
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3. Analysis of InGaN surfaces after chemical treatments and atomic layer deposition of Al2O3 for µLED applications
- Author
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Etienne Gheeraert, Emmanuel Nolot, David Vaufrey, Stéphane Cadot, François Martin, Corentin Le Maoult, Eugénie Martinez, Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Département d'Architectures, Conception et Logiciels Embarqués-LETI (DACLE-LETI), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA), Semi-conducteurs à large bande interdite (SC2G), Institut Néel (NEEL), Centre National de la Recherche Scientifique (CNRS)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Université Grenoble Alpes (UGA), Hiroshi Fujioka, Hadis Morkoç, Ulrich T. Schwarz, European Project: 755497,Hilico, Semi-conducteurs à large bande interdite (NEEL - SC2G), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), and Université Grenoble Alpes (UGA)
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010302 applied physics ,Materials science ,Chemical substance ,Passivation ,Analytical chemistry ,Nucleation ,chemistry.chemical_element ,surface treatments ,02 engineering and technology ,$\mu$LED ,021001 nanoscience & nanotechnology ,01 natural sciences ,Al$_2$O$_3$-ALD or PEALD ,Atomic layer deposition ,[SPI]Engineering Sciences [physics] ,InGaN passivation ,chemistry ,X-ray photoelectron spectroscopy ,XPS-WDXRF ,0103 physical sciences ,Thin film ,0210 nano-technology ,Indium ,Deposition (law) - Abstract
Event: SPIE OPTO, 2020, 01-06 February 2020 - San Francisco, California, United States; International audience; A deep understanding of semiconductors-dielectrics interface properties will provide guidelines to optimize efficient passivation solutions for InGaN/GaN based $\mu$LED. To this end, the quantum wells (QW) semiconductor is of tremendous interest since a lot of surface recombinations are likely to occur at LED active regions edges and are probably responsible for the low $\mu$LED efficiencies. Thus we discuss in this paper about X-ray photoemission (XPS) and wavelength dispersive X-ray fluorescence (WDXRF) characterizations of In$_{0.1}$Ga$_{0.9}$N surfaces after acid, basic or sulfur based chemical treatments followed or not by atomic layer deposition (ALD) of Al$_2$O$_3$ thin films with TMA/H$_2$O or TMA/O$_2$ plasma (plasma enhanced ALD) at 250°C. Depending on chemical treatments, variations of indium related XPS peaks were observed, which did not seem to be significantly affected by deposition of Al$_2$O$_3$ whatever the oxidizing precursor. The extreme surface concentration of indium was probably reduced, suggesting that some chemical pre-treatments for cleaning or passivation steps would have a direct impact on InGaN QW properties at LED edges. After sulfur based chemical treatments, even if sulfur was hardly detected by XPS, complementary measurements by WDXRF and subsequent calibration of the sulfur signal supported evaluation of a low surface concentration of sulfur. Changes of Al$_2$O$_3$ related XPS peaks suggested that the various studied pre-treatments induced different nucleations of first ALD cycles. Then, a clear variation of InGaN surfaces hydrolysis depending on surface treatments was finally highlighted by WDXRF based counting measurements, opening the way to a better understanding of first Al$_2$O$_3$ layers nucleation on InGaN.
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