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The small resistance change in the in lap shear solder joints is measured by a resistance spectroscopic technique. The changes in the electrical resistance are caused by fatigue and strain which occur in accordance with the changes in the temperature. The noise and other disturbances in the system is found to be less than one nano-ohm.

Electrical resistance is a well-known measure of fatigue and strain in the interconnects of electronic packages. However, static resistance measurements are difficult to perform. However, micro-ohm measurements of strain-induced resistance fluctuations may be carried out at the drive frequency of the sinusoidal strain and its harmonics. These facilitates reliability testing and accelerated life testing of such interconnects.

The channel capacity of a parallel bus structure was examined in relation to the ever increasing demand for signal input and output. The limitations on signal integrity caused by both far-end and near-end crosstalk noise were considered. Expressions for the signal wave forms were developed using a rudimentary model. The expressions were then used to evaluate the channel capacity for perfectly matched lines in the high-frequency regime where skin effect and dielectric loss dominate the loss due to the static resistance. The analysis showed that binary logic yields the maximum channel capacity. For the parameters assumed as an illustrative example, the input rise time needed to achieve the maximum channel capacity cannot be achieved with today's technology. For source rise times longer than this threshold or optimum rise time, the maximum channel capacity is achieved by using multilevel logic. In the case of short lines, insufficient coupling exists between lines to meet the channel capacity condition for two levels. Therefore, for short lines multiple logic also is necessary to achieve maximum channel capacity. Index Terms--Channel capacity, crosstalk, dielectric loss, interconnection, multiple-valued logic, noise coupling, skin-effect loss.

The standard model for electrical resistance of an anisotropic conducting film (ACF) bond has been analyzed for the case that includes both constriction resistance and a film resistance between the conducting particle and the bond pad. The electrical circuit for the bond resistance is divided into its different geometric regions for analysis. Evidence is give against the prevailing practice of equating the apparent physical area of contact between the conducting particle and the bond pad to the real area of electrical contact. A calculation evaluates the resistance of an ACF bond versus electrical current. This analysis shows that the constriction resistance for the ACF bond can be determined from the slope of the resistance versus current squared plot. Previous calculations for separable contact that extract the constriction resistance from the resistance versus current relationship have been carried out only for conductors that obey the Wiedemann-Franz law. Calculations in this work have extended the results to materials used in ACF bonds. Finally, it is argued that higher than expected contact resistance in anisotropic conducting adhesive bonds is likely due to a high resistivity temperature independent film resistance. [ABSTRACT FROM AUTHOR]

Presents a study which tested the pull strength, fatigue life and resistance change of four isotropically conducting adhesives. Experimental details; Results; Conclusion.