23 results on '"Cong, Ri-Dong"'
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2. Exciton properties for MoS2 grown with the horizontal and vertical orientation
3. Angle-Resolved Polarized Raman Spectra of Linear MoS2 Nanostructures for Optical Anisotropy Detection
4. Exciton properties for MoS2 grown with the horizontal and vertical orientation.
5. Optical characteristics of bilayer decoupling MoS2 grown by the CVD method
6. Angle-Resolved Polarized Raman Spectra of Linear MoS2 Nanostructures for Optical Anisotropy Detection.
7. Phonon and Exciton Properties between WS2 and MoS2 Layers via Inversion Heterostructure Engineering
8. Analysis of the generation mechanism of the S-shaped J–V curves of MoS2/Si-based solar cells
9. Angle-resolved polarized Raman spectra of the basal and edge plane of MoS2
10. Low temperature deposition and photoluminescence properties of silicon oxide multilayer films
11. Phonon and Exciton Properties between WS2 and MoS2 Layers via Inversion Heterostructure Engineering.
12. Enhancement of photovoltaic performance of MoS2/SiO2/Si heterojunction solar cells by film annealing
13. Phonon and Exciton Properties between WS2and MoS2Layers via Inversion Heterostructure Engineering
14. Low temperature deposition and photoluminescence properties of silicon oxide multilayer films
15. Nucleation mechanism and morphology evolution of MoS 2 flakes grown by chemical vapor deposition
16. Enhancement of photovoltaic performance of MoS2/SiO2/Si heterojunction solar cells by film annealing
17. Synthesis and Characterization of Rare Earth Nitride ScN and YN Microcrystalline
18. Improved performance of microcrystalline silicon solar cell with graded-band-gap silicon oxide buffer layer
19. Crystal structure and ionic conductivity of Mg-doped apatite-type lanthanum silicates La 10 Si 6− x Mg x O 27− x ( x = 0–0.4)
20. Structural transition of BaF 2 nanocrystals under high pressure
21. Structural transition of BaF2 nanocrystals under high pressure.
22. Optical characteristics of bilayer decoupling MoS 2 grown by the CVD method.
23. Phonon and Exciton Properties between WS 2 and MoS 2 Layers via Inversion Heterostructure Engineering.
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