1. Cryogenic Operation of Thin-Film FDSOI nMOS Transistors: The Effect of Back Bias on Drain Current and Transconductance
- Author
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Maud Vinet, Mikael Casse, B. Cardoso Paz, S. De Franceschi, Thierry Poiroux, Sylvain Barraud, Tristan Meunier, F. Gaillard, Gerard Ghibaudo, Laboratoire d'électronique et des technologies de l'Information [Sfax] (LETI), École Nationale d'Ingénieurs de Sfax | National School of Engineers of Sfax (ENIS), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), Commissariat à l'Énergie Atomique (CEA) DRMFC (CEA GRENOBLE), Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Circuits électroniques quantiques Alpes (NEEL - QuantECA), Institut Néel (NEEL), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Circuits électroniques quantiques Alpes (QuantECA), Centre National de la Recherche Scientifique (CNRS)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Université Grenoble Alpes (UGA)-Centre National de la Recherche Scientifique (CNRS)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), and Université Grenoble Alpes (UGA)-Université Grenoble Alpes (UGA)
- Subjects
010302 applied physics ,Materials science ,Silicon ,business.industry ,Transconductance ,Transistor ,Silicon on insulator ,chemistry.chemical_element ,01 natural sciences ,Electronic, Optical and Magnetic Materials ,law.invention ,chemistry ,law ,Logic gate ,0103 physical sciences ,Optoelectronics ,Electrical and Electronic Engineering ,[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,business ,NMOS logic ,AND gate ,ComputingMilieux_MISCELLANEOUS ,Voltage - Abstract
In this article, we have studied the drain current and transconductance of nMOS fully depleted silicon-on-insulator (FDSOI) transistors operating at low temperature (typically < 20 K) when back gate is forward biased. Humps appear in the current, leading to oscillations of the transconductance with gate voltage, owing to mobility discontinuity due to intersubband scattering, in relation with the 2-D subband structure. The conditions for which these specific features appear in thin-film silicon-on-insulator (SOI) devices have been analyzed, by varying the temperature, drain voltage, silicon channel thickness, and gate length.
- Published
- 2020
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