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The development of high-performance materials for microelectronics, energy storage, and extreme environments depends on our ability to describe and direct property-defining microstructural order. Our present understanding is typically derived from laborious manual analysis of imaging and spectroscopy data, which is difficult to scale, challenging to reproduce, and lacks the ability to reveal latent associations needed for mechanistic models. Here, we demonstrate a multi-modal machine learning (ML) approach to describe order from electron microscopy analysis of the complex oxide La$_{1-x}$Sr$_x$FeO$_3$. We construct a hybrid pipeline based on fully and semi-supervised classification, allowing us to evaluate both the characteristics of each data modality and the value each modality adds to the ensemble. We observe distinct differences in the performance of uni- and multi-modal models, from which we draw general lessons in describing crystal order using computer vision., Comment: 30 pages, 5 figures, 2 tables

Perovskite oxides hetero-structures are host to a large number of interesting phenomena such as ferroelectricity and 2D-superconductivity. Ferroelectric perovskite oxides have been of significant interest due to their possible use in MOSFETs and FRAM. SrHfO$_3$ (SHO) is a perovskite oxide with pseudo-cubic lattice parameter of 4.1 $\mathring{A}$ that previous DFT calculations suggest can be stabilized in a ferroelectric P4mm phase, similar to STO, when stabilized with sufficient compressive strain. Additionally, it is insulating, possesses a large band gap, and a high dielectric constant, making it an ideal candidate for oxide electronic devices. In this work, SHO films were grown by hybrid molecular beam epitaxy with a tetrakis(ethylmethylamino)hafnium(IV) source on GdScO$_3$ and TbScO$_3$ substrates. Equilibrium and strained SHO phases were characterized using X-ray diffraction, X-ray absorption spectroscopy, and scanning transmission electron microscopy to determine the perovskite phase of the strained films, with the results compared to density functional theory models of phase stability versus strain. Contrary to past reports, we find that compressively-strained SrHfO$_3$ undergoes octahedral tilt distortions and most likely takes on the I4/mcm phase with the a$^0$a$^0$c$^-$ tilt pattern., Comment: 36 pages, 11 figures

The large spin-orbit coupling in iridium oxides plays a significant role in driving novel physical behaviors, including emergent phenomena in the films and heterostructures of perovskite and Ruddlesden-Popper iridates. In this work, we study the role of epitaxial strain on the electronic behavior of thin SrIrO$_3$ films. We find that compressive epitaxial strain leads to metallic transport behavior, but a slight tensile strain shows gapped behavior. Temperature-dependent resistivity measurements are used to examine different behaviors in films as a function of strain. We find Kondo contributions to the resistivity, with stronger effects in films that are thinner and under less compressive epitaxial strain. These results show the potential to tune SrIrO$_3$ into Kondo insulating states and open possibilities for a quantum critical point that can be controlled with strain in epitaxial films., Comment: 13 pages, 4 figures

This study compares the growth cycles and spatial distribution of dust cloud for titania and carbonaceous dusty nanoparticles in capacitively coupled radiofrequency plasmas, with and without the presence of a weak magnetic field of approximately 500 Gauss. Findings on cycle time, growth rate, and spatial distribution of dust cloud are discussed. The growth of nanoparticles in these plasmas is cyclic, with particles reaching their maximum size and subsequently moving out of the plasma, followed by the generation of a new particle growth cycle. The presence of the magnetic field speeds up the growth cycle in both plasma. The magnetic field also makes the spatial distribution of the two dust cloud different from each other. Langmuir probe measurement of the background plasma parameters such as electron temperature and floating potential reveal radial variations in floating potential but not electron temperature. Furthermore, the magnetic field changes the radial variation of floating potential. These measurements, however, are not sufficient to explain why the two dust clouds appear differently. It is possible that the differences occur due to a gradient in the radial distribution of the magnetic field.

In dusty plasma environments, the spontaneous growth of nanoparticles from reactive gases has been extensively studied for over three decades, primarily focusing on hydrocarbons and silicate particles. Here, we introduce the growth of titanium dioxide, a wide band gap semiconductor, as dusty plasma nanoparticles. The resultant particles exhibited a spherical morphology and reached a maximum homogeneous radius of 230 $\pm$ 17 nm after an elapsed time of 70 seconds. The particle grew linearly and the growth displayed a cyclic behavior; that is, upon reaching their maximum radius, the largest particles fell out of the plasma, and a new growth cycle immediately followed. The particles were collected after being grown for different amounts of time and imaged using scanning electron microscopy. Further characterization was carried out using energy dispersive X-ray spectroscopy, X-ray diffraction and Raman spectroscopy to elucidate the chemical composition and crystalline properties of the maximally sized particles. Initially, the as-grown particles after 70 seconds exhibited an amorphous structure. However, annealing treatments at temperatures of 400 $^\circ$C and 800 $^\circ$C induced crystallization, yielding anatase and rutile phases, respectively. Notably, annealing at 600 $^\circ$C resulted in a mixed phase of anatase and rutile. These findings open new avenues for a rapid and controlled growth technique of titanium dioxide as dusty plasma., Comment: 8 pages, 5 figures

Molecular beam epitaxy (MBE), a workhorse of the semiconductor industry, has progressed rapidly in the last few decades in the development of novel materials. Recent developments in condensed matter and materials physics have seen the rise of many novel quantum materials that require ultra-clean and high-quality samples for fundamental studies and applications. Novel oxide-based quantum materials synthesized using MBE have advanced the development of the field and materials. In this review, we discuss the recent progress in new MBE techniques that have enabled synthesis of complex oxides that exhibit "quantum" phenomena, including superconductivity and topological electronic states. We show how these techniques have produced breakthroughs in the synthesis of 4d and 5d oxide films and heterostructures that are of particular interest as quantum materials. These new techniques in MBE offer a bright future for the synthesis of ultra-high quality oxide quantum materials., Comment: 29 pages, 7 figures

Transition metal spinel oxides comprised of Earth-abundant Mn and Co have long been explored for their use in catalytic reactions and energy storage. However, understanding of functional properties can be challenging due to differences in sample preparation and the ultimate structural properties of the materials. Epitaxial thin film synthesis provides a novel means of producing precisely-controlled materials to explore the variations reported in the literature. In this work, Mn$_{x}$Co$_{3-x}$O$_{4}$ samples from x = 0 to x = 1.28 were synthesized through molecular beam epitaxy and characterized to develop a material properties map as a function of stoichiometry. Films were characterized via in situ X-ray photoelectron spectroscopy, X-ray diffraction, scanning transmission electron microscopy, and polarized K-edge X-ray absorption spectroscopy. Mn cations within this range were found to be octahedrally coordinated, in line with an inverse spinel structure. Samples largely show mixed Mn$^{3+}$ and Mn$^{4+}$ character with evidence of phase segregation tendencies with increasing Mn content and increasing Mn$^{3+}$ formal charge. Phase segregation may occur due to structural incompatibility between cubic and tetragonal crystal structures associated with Mn$^{4+}$ and Jahn-Teller active Mn$^{3+}$ octahedra, respectively. Our results help to explain the reported differences across samples in these promising materials for renewable energy technologies., Comment: 25 pages, 8 figures; Supplemental info and figures, 9 pages

Transition metal oxides have generated significant interest for their potential as catalysts for the oxygen evolution reaction (OER) in alkaline environments. Iron and nickel-based perovskite oxides have proven particularly promising, with catalytic over-potentials rivaling precious metal catalysts when the alignment of the valence band relative to the OER reaction potential is tuned through substitutional doping or alloying. Here we report that engineering of band alignment in LaFeO$_{3}$/LaNiO$_{3}$ (LFO/LNO) heterostructures via interfacial doping yields greatly enhanced catalytic performance. Using density functional theory modeling, we predict a 0.2 eV valence band offset (VBO) between metallic LNO and semiconducting LFO that significantly lowers the barrier for hole transport through LFO compared to the intrinsic material and make LFO a p-type semiconductor. Experimental band alignment measurements using in situ X-ray photoelectron spectroscopy of epitaxial LFO/LNO heterostructures agree quite well with these predictions, producing a measured VBO of 0.3(1) eV. OER catalytic measurements on the same samples in alkaline solution show an increase in catalytic current density by a factor of ~275 compared to LFO grown on n-type Nb-doped SrTiO$_{3}$. These results demonstrate the power of tuning band alignments through interfacial band engineering for improved catalytic, Comment: 13 pages, 5 figures; Supplemental info: 5 pages, 5 figures

Oxide two-dimensional electron gases (2DEGs) promise high charge carrier concentrations and low-loss electronic transport in semiconductors such as BaSnO$_{3}$ (BSO). ACBN0 computations for BSO/SrNbO$_{3}$ (SNO) interfaces show Nb-4$\textit{d}$ electron injection into extended Sn-5$\textit{s}$ electronic states. The conduction band minimum consists of Sn-5$\textit{s}$ states ~1.2 eV below the Fermi level for intermediate thickness 6-unit cell BSO/6-unit cell SNO superlattices, corresponding to an electron density in BSO of ~10$^{21}$ cm$^{-3}$. Experimental studies of analogous SNO/BSO interfaces grown by molecular beam epitaxy confirm significant charge transfer from SNO to BSO. $\textit {In situ}$ angle-resolved X-ray photoelectron spectroscopy studies show an electron density of ~4 $\times$ 10$^{21}$ cm$^{-3}$. The consistency of theory and experiment shows that BSO/SNO interfaces provide a novel materials platform for low loss electron transport in 2DEGs., Comment: There are 7 Figures, 1 Table and 10 pages

Nanocrystalline MnFe$_{2}$O$_{4}$ has shown promise as a catalyst for the oxygen reduction reaction (ORR) in alkaline solutions, but the material has been lightly studied as highly ordered thin film catalysts. To examine the role of surface termination and Mn and Fe site occupancy, epitaxial MnFe$_{2}$O$_{4}$ and Fe$_{3}$O$_{4}$ spinel oxide films were grown on (001) and (111) oriented Nb:SrTiO$_{3}$ perovskite substrates using molecular beam epitaxy and studied as electrocatalysts for the oxygen reduction reaction (ORR). HRXRD and XPS show synthesis of pure phase materials while STEM and RHEED analysis demonstrate island-like growth of (111) surface terminated pyramids on both (001) and (111) oriented substrates, consistent with the literature and attributed to lattice mismatch between the spinel films and perovskite substrate. Cyclic voltammograms under an N$_{2}$ atmosphere revealed distinct redox features for Mn and Fe surface termination based on comparison of MnFe$_{2}$O$_{4}$ and Fe$_{3}$O$_{4}$. Under O$_{2}$ atmosphere, electrocatalytic reduction of oxygen was observed at both Mn and Fe redox features; however, diffusion limited current was only achieved at potentials consistent with Fe reduction. This result contrasts with that of nanocrystalline MnFe$_{2}$O$_{4}$ reported in the literature where diffusion limited current is achieved with Mn-based catalysis. This difference is attributed to a low density of Mn surface termination, as determined by the integration of current from CVs collected under N$_{2}$, in addition to low conductivity through the MnFe$_{2}$O$_{4}$ film due to the degree of inversion. Such low densities are attributed to the synthetic method and island-like growth pattern and highlight challenges in studying ORR catalysis with single-crystal spinel materials., Comment: 26 pages, 10 figures; 16 supplemental figures

4d transition metal oxides have emerged as promising materials for numerous applications including high mobility electronics. SrNbO$_{3}$ is one such candidate material, serving as a good donor material in interfacial oxide systems and exhibiting high electron mobility in ultrathin films. However, its synthesis is challenging due to the metastable nature of the d$^{1}$ Nb$^{4+}$ cation and the limitations in the delivery of refractory Nb. To date, films have been grown primarily by pulsed laser deposition (PLD), but development of a means to grow and stabilize the material via molecular beam epitaxy (MBE) would enable studies of interfacial phenomena and multilayer structures that may be challenging by PLD. To that end, SrNbO$_{3}$ thin films were grown using hybrid MBE for the first time using a tris(diethalamido)(tert-butylimido) niobium precursor for Nb and an elemental Sr source on GdScO$_{3}$ substrates. Varying thicknesses of insulating SrHfO$_{3}$ capping layers were deposited using a hafnium tert-butoxide precursor for Hf on top of SrNbO$_{3}$ films to preserve the metastable surface. Grown films were transferred in vacuo for X-ray photoelectron spectroscopy to quantify elemental composition, density of states at the Fermi energy, and Nb oxidation state. Ex situ studies by X-ray absorption near edge spectra illustrates the SrHfO$_{3}$ capping plays an important role in preserving the Nb 4d$^{1}$ metastable charge state in atmospheric conditions., Comment: 11 pages, 5 figures; 3 pages of supplemental information

Transition metal oxides have long been an area of interest for water electrocatalysis through the oxygen evolution and oxygen reduction reactions. Iron oxides, such as LaFeO$_{3}$, are particularly promising due to the favorable energy alignment of the valence and conduction bands comprised of Fe$^{3+}$ cations and the visible light band gap of such materials. In this work, we examine the role of band alignment on the electrocatalytic oxygen evolution reaction (OER) in the intrinsic semiconductor LaFeO$_{3}$ by growing epitaxial films of varying thicknesses on Nb-doped SrTiO$_{3}$. Using cyclic voltammetry and electrochemical impedance spectroscopy, we find that there is a strong thickness dependence on the efficiency of electrocatalysis for OER. These measurements are understood based on interfacial band alignment in the system as confirmed by layer-resolved electron energy loss spectroscopy and electrochemical Mott-Schottky measurements. Our results demonstrate the importance of band engineering for the rational design of thin film electrocatalysts for renewable energy sources., Comment: 19 pages, 6 figures; authors Burton and Paudel contributed equally; supplement: 11 pages, 7 figures

Ternary chalcogenides such as the parkerites and shandites are a broad class of materials exhibiting rich diversity of transport and magnetic behavior as well as an array of topological phases including Weyl and Dirac nodes. However, they remain largely unexplored as high-quality epitaxial thin films. Here, we report the self-regulated growth of thin films of the strong spin-orbit coupled superconductor Pd3Bi2Se2 on SrTiO3 by molecular beam epitaxy. Films are found to grow in a self-regulated fashion, where, in excess Se, the temperature and relative flux ratio of Pd to Bi controls the formation of Pd3Bi2Se2 due to the combined volatility of Bi, Se, and Bi-Se bonded phases. The resulting films are shown to be of high structural quality, the stoichiometry is independent of the Pd:Bi and Se flux ratio and exhibit a superconducting transition temperature of 800 mK and critical field of 17.7 +/- 0.5 mT, as probed by transport as well as magnetometry. Understanding and navigating the growth of the chemically and structurally diverse classes of ternary chalcogenides opens a vast space for discovering new phenomena as well as enabling new applications.

Emergent behavior at complex oxide interfaces has driven much of the research in the oxide thin film community for the past twenty years. Interfaces have been engineered for potential applications in spintronics, topological quantum computing, and high-speed electronics in cases where the bulk materials would not exhibit the desired properties. Advances in thin film growth have made the synthesis of these interfaces possible, while surface characterization tools such as X-ray photoelectron spectroscopy have been critical to understanding surface and interfacial phenomena in these materials. In this review we discuss the leading research in the oxide field over the past 5-10 years with a focus on connecting the key results to the X-ray photoelectron spectroscopy studies that enabled them. We describe how in situ integration of synthesis and spectroscopy can be used to improve the film growth process and to perform immediate experiments on specifically tailored interfacial heterostructures. These studies can include determination of interfacial intermixing, valence band alignment, and interfacial charge transfer. We also show how advances in synchrotron-based spectroscopy techniques have answered questions that cannot be addressed in a lab-based system. By further tying together synthesis and spectroscopy through in situ techniques, we conclude by discussing future opportunities in the field through the careful design of thin film heterostructures that are optimized for X-ray studies., Comment: 31 pages, 12 figures

Reflection high-energy electron diffraction (RHEED) is a ubiquitous in situ molecular beam epitaxial (MBE) characterization tool. Although RHEED can be a powerful means for crystal surface structure determination, it is often used as a static qualitative surface characterization method at discrete intervals during a growth. A full analysis of RHEED data collected during the entirety of MBE growths is made possible using principle component analysis (PCA) and k-means clustering to examine significant boundaries that occur in the temporal clusters grouped from RHEED data and identify statistically significant patterns. This process is applied to data from homoepitaxial SrTiO$_{3}$ growths, heteroepitaxial SrTiO$_{3}$ grown on scandate substrates, BaSnO$_{3}$ films grown on SrTiO$_{3}$ substrates, and LaNiO$_{3}$ films grown on LaAlO$_{3}$ substrates. This analysis may provide additional insights into the surface evolution and transitions in growth modes at precise times and depths during growth, and that video archival of an entire RHEED image sequence may be able to provide more insight and control over growth processes and film quality., Comment: 12 pages, 12 figures

Hybrid oxide molecular beam epitaxy (hMBE), a thin-film deposition technique in which transition metal cations are delivered using a metal-organic precursor, has emerged as the state-of-the-art approach to the synthesis of electronic-grade complex oxide films with a stoichiometric growth window. However, numerous questions remain regarding the chemical mechanisms of the growth process and the surface properties of the resulting films. To examine these properties, thin film SrTiO$_{3}$ (STO) was prepared by hMBE using a titanium tetraisopropoxide (TTIP) precursor for Ti delivery and an elemental Sr source on annealed STO and Nb-doped STO substrates with varying TTIP:Sr flux ratios to examine the conditions for the reported stoichiometric growth window. The films were transferred in vacuo to an x-ray photoelectron spectroscopy system to study the surface elemental composition. Samples were examined using x-ray diffraction to compare our surface sensitive results with previously reported measurements of the bulk of the films in the literature. Ex situ studies by atomic force microscopy, scanning tunneling microscopy and low energy electron microscopy confirmed the presence of surface reconstructions and an Ehrlich-Schwoebel barrier consistent with an A-site SrO termination. We find that a surface exhibiting a mixture of SrO and TiO$_{2}$ termination, or a full SrO termination is necessary to obtain stoichiometric adsorption-controlled growth. These results indicate that surface Sr is necessary to maintain chemical equilibrium for stoichiometric growth during the hMBE process, which is important for the design of future interfacial systems using this technique., Comment: 37 pages, 6 figures, 10 supplemental figures

LaCrO$_3$ (LCO) / SrTiO$_3$ (STO) heterojunctions are intriguing due to a polar discontinuity along (001), two distinct and controllable interface structures [(LaO)$^+$/(TiO$_2$)$^0$ and (SrO)$^0$/(CrO$_2$)$^-$], and interface-induced polarization. In this study, we have used soft- and hard x-ray standing-wave excited photoemission spectroscopy (SW-XPS) to generate a quantitative determination of the elemental depth profiles and interface properties, band alignments, and the depth distribution of the interface-induced built-in potentials in the two constituent oxides. We observe an alternating charged interface configuration: a positively charged (LaO)$^+$/(TiO$_2$)$^0$ intermediate layer at the LCO$_\textbf{top}$/STO$_\textbf{bottom}$ interface and a negatively charged (SrO)$^0$/(CrO$_2$)$^-$ intermediate layer at the STO$_\textbf{top}$/LCO$_\textbf{bottom}$ interface. Using core-level SW data, we have determined the depth distribution of species, including through the interfaces, and these results are in excellent agreement with scanning transmission electron microscopy and electron energy loss spectroscopy (STEM-EELS) mapping of local structure and composition. SW-XPS also enabled deconvolution of the LCO-contributed and STO- contributed matrix-element-weighted density of states (MEWDOSs) from the valence band (VB) spectra for the LCO/STO superlattice (SL). Monitoring the VB edges of the deconvoluted MEWDOS shifts with a change in probing profile, the alternating charge- induced built-in potentials are observed in both constituent oxides. Finally, using a two-step simulation approach involving first core-level binding energy shifts and then valence-band modeling, the built-in potential gradients across the SL are resolved in detail and represented by the depth distribution of VB edges., Comment: Main text: 29 pages, 5 figures; Supplementary Information: 20 pages, 10 figures

Thin film synthesis methods developed over the past decades have unlocked emergent interface properties ranging from conductivity to ferroelectricity. However, our attempts to exercise precise control over interfaces are constrained by a limited understanding of growth pathways and kinetics. Here we demonstrate that shuttered molecular beam epitaxy induces rearrangements of atomic planes at a polar / non-polar junction of LaFeO$_3$ (LFO) / $n$-SrTiO$_3$ (STO) depending on the substrate termination. Surface characterization confirms that substrates with two different (TiO$_2$ and SrO) terminations were prepared prior to LFO deposition; however, local electron energy loss spectroscopy measurements of the final heterojunctions show a predominantly LaO / TiO$_2$ interfacial junction in both cases. Ab initio simulations suggest that the interfaces can be stabilized by trapping extra oxygen (in LaO / TiO$_2$) and forming oxygen vacancies (in FeO$_2$ / SrO), which points to different growth kinetics in each case and may explain the apparent disappearance of the FeO$_2$ / SrO interface. We conclude that judicious control of deposition timescales can be used to modify growth pathways, opening new avenues to control the structure and properties of interfacial systems., Comment: 21 pages, 7 figures

Interface structure at polar/non-polar interfaces has been shown to be a key factor in controlling emergent behavior in oxide heterostructures, including the LaFeO$_3$/$\textit{n}$-SrTiO$_3$ system. We demonstrate via high energy resolution x-ray photoemission that epitaxial LaFeO$_3$/$\textit{n}$-SrTiO$_3$ (001) heterojunctions engineered to have opposite interface polarities exhibit very similar band offsets and potential gradients within the LaFeO$_3$ films. However, differences in the potential gradient within the SrTiO$_3$ layer depending on polarity may promote hole diffusion into LaFeO$_3$ for applications in photocatalysis., Comment: 10 pages, 3 figures; supplemental info: 6 pages, 3 figures

Epitaxial interfaces and superlattices comprised of polar and non-polar perovskite oxides have generated considerable interest because they possess a range of desirable properties for functional devices. In this work, emergent polarization in superlattices of SrTiO$_3$ (STO) and LaCrO$_3$ (LCO) is demonstrated. By controlling the interfaces between polar LCO and non-polar STO, polarization is induced throughout the STO layers of the superlattice. Using x-ray absorption near-edge spectroscopy and aberration-corrected scanning transmission electron microscopy displacements of the Ti cations off-center within TiO6 octahedra along the superlattice growth direction are measured. This distortion gives rise to built-in potential gradients within the STO and LCO layers, as measured by in situ x-ray photoelectron spectroscopy. Density functional theory models explain the mechanisms underlying this behavior, revealing the existence of both an intrinsic polar distortion and a built-in electric field, which are due to alternately positively and negatively charged interfaces in the superlattice. This study paves the way for controllable polarization for carrier separation in multilayer materials and highlights the crucial role that interface structure plays in governing such behavior., Comment: 19 pages, 3 figures, supplement: 13 pages, 7 figures, Advanced Materials Interfaces, Early View, 2016

Amorphous TbFeCo thin films sputter deposited at room temperature on thermally oxidized Si substrate are found to exhibit strong perpendicular magnetic anisotropy (PMA). Atom probe tomography (APT), scanning transmission electron microscopy (STEM), and energy dispersive spectroscopy (EDS) mapping have revealed two nanoscale amorphous phases with different Tb atomic percentages distributed within the amorphous film. Exchange bias accompanied by bistable magneto-resistance states has been uncovered near room temperature by magnetization and magneto-transport measurements. The exchange anisotropy originates from the exchange interaction between the ferrimagnetic and ferromagnetic components corresponding to the two amorphous phases. This study provides a platform for exchange bias and magneto-resistance switching using single-layer amorphous ferrimagnetic thin films that require no epitaxial growth., Comment: Key words: Magnetic thin films, self bias, bistable states. To be published in Applied Physics Letters

CoFe${}_{2}$O${}_{4}$ (CFO)-BiFeO${}_{3}$ (BFO) nanocomposites are an intriguing option for future memory and logic technologies due to the magnetoelctric properties of the system. However, these nanocomposites form with CFO pillars randomly located within a BFO matrix, making implementation in devices difficult. To overcome this, we present a technique to produce patterned nanocomposites through self-assembly. CFO islands are patterned on Nb-doped SrTiO${}_{3}$ to direct the self-assembly of epitaxial CFO-BFO nanocomposites, producing square arrays of CFO pillars., Comment: 17 pages, 6 figures; Supplement: 6 pages, 1 figure

Band gap engineering in SrTiO${}_{3}$ and related titanate perovskites has long been explored due to the intriguing properties of the materials for photocatalysis and photovoltaic applications. A popular approach in the materials chemistry community is to substitutionally dope aliovalent transition metal ions onto the B site in the lattice to alter the valence band. However, in such a scheme there is limited control over the dopant valence, and compensating defects often form. Here we demonstrate a novel technique to controllably synthesize Fe$^{2+}$- and Fe$^{3+}$-doped SrTiO${}_{3}$ thin films without formation of compensating defects by co-doping with La$^{3+}$ ions on the A site. We stabilize Fe$^{2+}$-doped films by doping with two La ions for every Fe dopant, and find that the Fe ions exhibit a low-spin electronic configuration, producing optical transitions in the near infrared regime and degenerate doping. The novel electronic states observed here offer a new avenue for band gap engineering in perovskites for photocatalytic and photovoltaic applications., Comment: 19 pages, 6 figures; supplemental information: 7 pages, 6 figures

SrTiO$_{3}$ (STO) epitaxial thin films and heterostructures are of considerable interest due to the wide range of functionalities they exhibit. The alloy perovskite (LaAlO$_{3}$)$_{0.3}$-(Sr$_{2}$AlTaO$_{6}$)$_{0.7}$ (LSAT) is commonly used as a substrate for these material structures due to its structural compatibility with STO and the strain-induced ferroelectric response in STO films grown on LSAT. However, surprisingly little is known about the electronic properties of the STO/LSAT interface despite its potentially important role in affecting the overall electronic structure of system. We examine the band alignment of STO/LSAT heterostructures using x-ray photoelectron spectroscopy for epitaxial STO films deposited using two different molecular beam epitaxy approaches. We find that the valence band offset ranges from +0.2(1) eV to -0.2(1) eV depending on the film surface termination. From these results we extract a conduction band offset from -2.4(1) eV to -2.8(1) eV, indicating that the conduction band edge is more deeply bound in STO and that LSAT will not act as a sink or trap for electrons in the supported film or multilayer., Comment: 14 pages, 3 figures; Accepted in Applied Physics Letters

Perovskite titanates such as SrTiO$_{3}$ (STO) exhibit a wide range of important functional properties, including high electron mobility, ferroelectricity, and excellent photocatalytic performance. The wide optical band gap of titanates limits their use in these applications, however, making them ill-suited for integration into solar energy harvesting technologies. Our recent work has shown that by doping STO with equal concentrations of La and Cr we can enhance visible light absorption in epitaxial thin films while avoiding any compensating defects. In this work, we explore the optical properties of photoexcited carriers in these films. Using spectroscopic ellipsometry, we show that the Cr$^{3+}$ dopants, which produce electronic states immediately above the top of the O 2p valence band in STO reduce the direct band gap of the material from 3.75 eV to between 2.4 and 2.7 eV depending on doping levels. Transient reflectance spectroscopy measurements are in agreement with the observations from ellipsometry and confirm that optically generated carriers are present for longer than 2 ns. Finally, through photoelectrochemical methylene blue degradation measurements, we show that these co-doped films exhibit enhanced visible light photocatalysis when compared to pure STO., Comment: 19 pages including supplement, 8 figures (3 main, 5 supplement)

The ability to pattern the location of pillars in epitaxial matrix-pillar nanocomposites is a key challenge to develop future technologies using these intriguing materials. One such model system employs a ferrimagnetic CoFe$_{2}$O$_{4}$ (CFO) pillar embedded in a ferroelectric BiFeO$_{3}$ (BFO) matrix, which has been proposed as a possible memory or logic system. These composites self-assemble spontaneously with pillars forming through nucleation at a random location when grown via physical vapor deposition. Recent results have shown that if an island of the pillar material is pre-patterned on the substrate, it is possible to control the nucleation process and determine the locations where pillars form. In this work, we employ electron microscopy and x-ray diffraction to examine the chemical composition and microstructure of patterned CFO-BFO nanocomposites. Cross-sectional transmission electron microscopy is used to examine the nucleation effects at the interface between the template island and resulting pillar.Evidence of grain boundaries and lattice tilting in the templated pillars is also presented and attributed to the microstructure of the seed island., Comment: 9 pages, 8 figures; 5 pages supplement, 5 figures

We demonstrate a versatile variable field module (VFM) with capability of both field and angular dependent measurements up to 1800 Oe for scanning probe system. The magnetic field strength is changed by adjusting the distance between a rare earth magnet and the probe tip and is monitored in-situ by a built-in Hall sensor. Rotating the magnet allows the field vector to change from the horizontal to vertical direction and makes it possible to do angular dependent measurements. The capability of the VFM system is demonstrated by degaussing a floppy disk media with increasing magnetic field. Angular dependent measurements clearly show the evolution of magnetic domain structures, with a completely reversible magnetic force microscopy phase contrast observed when the magnetic field is rotated by 180{\deg}. A further demonstration of out-of-plane and in-plane magnetic switching of CoFe2O4 pillars in CoFe2O4-BiFeO3 nanocomposites was presented and discussed., Comment: submitted to Review of Scientific Instruments

We report the epitaxial growth of BiFeO3 by pulsed electron deposition and the resulting crystal quality, magnetic and nanoscale switching properties. X-ray diffraction shows high quality single phase, epitaxial (001) oriented films grown on SrTiO3 (001) substrates. Both field and temperature dependent magnetic properties reveal an antiferromagnetic behavior of the films. For the film with a SrRuO3 bottom electrode, an exchange-enhancement effect between antiferromagnetic BiFeO3 and ferromagnetic SrRuO3 was observed at low temperature. The piezoelectric force microscopy and switching spectroscopy measurements demonstrate the local domain switching process and suggest that the BiFeO3 films are high quality ferroelectrics., Comment: submitted to J. Vac. Sci. Technol. B