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We demonstrate a free-space amplitude modulator for mid-infrared radiation (lambda=9.6 um) that operates at room temperature up to at least 20 GHz (above the -3dB cutoff frequency measured at 8.2 GHz). The device relies on the ultra-fast transition between weak and strong-coupling regimes induced by the variation of the applied bias voltage. Such transition induces a modulation of the device reflectivity. It is made of a semiconductor heterostructure enclosed in a judiciously designed array of metal-metal optical resonators, that - all-together - behave as an electrically tunable surface. At negative bias, it operates in the weak light-matter coupling regime. Upon application of an appropriate positive bias, the quantum wells populate with electrons and the device transitions to the strong-coupling regime. The modulator transmission keeps linear with input RF power in the 0dBm - 9dBm range. The increase of optical powers up to 25 mW exhibit a weak beginning saturation a little bit below.

The development of nanoscale nonlinear elements in photonic integrated circuits is hindered by the physical limits to the nonlinear optical response of dielectrics, which requires that the interacting waves propagate in transparent volumes for distances much longer than their wavelength. Here we present experimental evidence that optical nonlinearities in doped semiconductors are due to free-electron and their efficiency could exceed by several orders of magnitude that of conventional dielectric nonlinearities. Our experimental findings are supported by comprehensive computational results based on the hydrodynamic modeling, which naturally includes nonlocal effects, of the free-electron dynamics in heavily doped semiconductors. By studying third-harmonic generation from plasmonic nanoantenna arrays made out of heavily n-doped InGaAs with increasing levels of free-carrier density, we discriminate between hydrodynamic and dielectric nonlinearities. As a result, the value of maximum nonlinear efficiency as well as its spectral location can now be controlled by tuning the doping level. Having employed the common material platform InGaAs/InP that supports integrated waveguides, our findings pave the way for future exploitation of plasmonic nonlinearities in all-semiconductor photonic integrated circuits.

Bio image analysis has recently become one keystone of biological research but biologists tend to get lost in a plethora of available software and the way to adjust available tools to their own image analysis problem. We present BIII, BioImage Informatic Index (www.biii.eu), the result of the first large community effort to bridge the communities of algorithm and software developers, bioimage analysts and biologists, under the form of a web-based knowledge database crowdsourced by these communities. Software tools (> 1300), image databases for benchmarking (>20) and training materials (>70) for bio image analysis are referenced and curated following standards constructed by the community and then reaching a broader audience. Software tools are organized as full protocol of analysis (workflow), specific brick (component) to construct a workflow, or software platform or library (collection). They are described using Edam Bio Imaging, which is iteratively defined using this website. All entries are exposed following FAIR principles and accessible for other usage., Comment: 5 pages of main article including one figure and references, followed by the lis of taggers, the description of the ontologies in uses and some example of usage

The main technological obstacle hampering the dissemination of modern optoelectronic devices operating with large light-matter coupling strength ${\Omega}$ is an in-depth comprehension of the carrier current extraction and injection from and into strongly coupled light-matter states, the so-called polaritonic states. The main challenge lies in modeling the interaction between excitations of different nature, namely bosonic excitations (the plasmonic ISB excitations) with fermionic excitations (the electrons within the extraction or injection subband). In this work, we introduce a comprehensive quantum framework that encompasses both the ISB plasmonic mode and the extractor/injector mode, with a specific emphasis on accurately describing the coherent nature of transport. This reveals inherent selection rules dictating the interaction between the ISB plasmon and the extraction/injection subband. To incorporate the dynamics of the system, this framework is combined to a density matrix model and a quantum master equation which have the key property to distinguish intra and intersubband mechanisms. These theoretical developments are confronted to experimental photocurrent measurements from midinfrared quantum cascade detectors (${\lambda}$ = 10 ${\mu}$m) embedded in metal-semiconductor-metal microcavities, operating at the onset of the strong light-matter coupling regime (2${\Omega}$ = 9.3 meV). We are able to reproduce quantitatively the different features of the photocurrent spectra, notably the relative amplitude evolution of the polaritonic peaks with respect to the voltage bias applied to the structure. These results on extraction allow us to elucidate the possibility to effectively inject electronic excitations into ISB plasmonic states, and thus polaritonic states.

Continuously graded parabolic quantum wells with excellent optical performances are used to overcome the low-frequency and thermal limitations of square quantum wells at terahertz frequencies. The formation of microcavity intersubband polaritons at frequencies as low as 1.8 THz is demonstrated, with a sustained ultra-strong coupling regime up to a temperature of 200K. It is additionally shown that the ultra-strong coupling regime is preserved when the active region is embedded in sub-wavelength resonators, with an estimated relative strength $\eta = \Omega_R / \omega_0 = 0.12$. This represents an important milestone for future studies of quantum vacuum radiation because such resonators can be optically modulated at ultrafast rates, possibly leading to the generation of non-classical light via the dynamic Casimir effect. Finally, with an effective volume of $2.10^{-6} \lambda_0^3$, it is estimated that fewer than 3000 electrons per resonator are ultra-strongly coupled to the quantized electromagnetic mode, proving it is also a promising approach to explore few-electron polaritonic systems operating at relatively high temperatures., Comment: 7 pages, 4 figures

We demonstrate that absorption saturation of a mid-infrared intersubband transition can be engineered to occur at moderate light intensities of the order of 10-20 kW$.$cm$^{-2}$ and at room temperature. The structure consists of an array of metal-semiconductor-metal patches hosting a judiciously designed 253 nm thick GaAs/AlGaAs semiconductor heterostructure. At low incident intensity the structure operates in the strong light-matter coupling regime and exhibits two absorption peaks at wavelengths close to 8.9 $\mu$m. Saturation appears as a transition to the weak coupling regime - and therefore to a single-peaked absorption - when increasing the incident intensity. Comparison with a coupled mode theory model explains the data and permits to infer the relevant system parameters. When the pump laser is tuned at the cavity frequency, the reflectivity decreases with increasing incident intensity. When instead the laser is tuned at the polariton frequencies, the reflectivity non-linearly increases with increasing incident intensity. At those wavelengths the system therefore mimics the behavior of a saturable absorption mirror (SESAM) in the mid-IR range, a technology that is currently missing.

Recently, the concept of strong light-matter coupling has been demonstrated in semiconductor structures, and it is poised to revolutionize the design and implementation of components, including solid state lasers and detectors. We demonstrate an original nanospectroscopy technique that permits to study the light-matter interaction in single subwavelength-sized nano-cavities where far-field spectroscopy is not possible using conventional techniques. We inserted a thin ($\approx$ 150 nm) polymer layer with negligible absorption in the mid-IR (5 $\mu$m < $\lambda$ < 12 $\mu$m) inside a metal-insulator-metal resonant cavity, where a photonic mode and the intersubband transition of a semiconductor quantum well are strongly coupled. The intersubband transition peaks at $\lambda$ = 8.3 $\mu$m, and the nano-cavity is overall 270 nm thick. Acting as a non-perturbative transducer, the polymer layer introduces only a limited alteration of the optical response while allowing to reveal the optical power absorbed inside the concealed cavity. Spectroscopy of the cavity losses is enabled by the polymer thermal expansion due to heat dissipation in the active part of the cavity, and performed using an atomic force microscope (AFM). This innovative approach allows the typical anticrossing characteristic of the polaritonic dispersion to be identified in the cavity loss spectra at the single nano-resonator level. Results also suggest that near-field coupling of the external drive field to the top metal patch mediated by a metal-coated AFM probe tip is possible, and it enables the near-field mapping of the cavity mode symmetry including in the presence of strong light-matter interaction.

We analyse the effect of a strong perpendicular magnetic field on an intersubband transition in a disordered doped quantum well strongly coupled to an optical cavity. The magnetic field changes the lineshape of the intersubband optical transition due to the interface roughness of the quantum well from a Lorentzian to a Gaussian one. In this regime, a novel form of magnetic-field-induced cavity protection sets in, which strongly reduces the polariton linewidth to the cavity contribution only. Implications of our results for fundamental studies of nonlinear polariton dynamics and for technological applications to polariton lasers are finally highlighted.

We report on a GaN/AlGaN quantum cascade detector operating in the terahertz spectral range. The device was grown by metal organic chemical vapor deposition on a c-sapphire substrate and relies on polar GaN/AlGaN step quantum wells. The active region thickness is in micrometer range. The structural, electrical and optical investigations attest of high structural quality of the synthetized nitride material. The detector exhibits a peak photocurrent at 5.7 THz (23.6 meV) with a responsivity of 0.1 mA/W at 10 K under surface normal irradiation through a 10 um period grating. The photocurrent persists up to 20 K.

Nowadays, data has become an invaluable asset to entities and companies, and keeping it secure represents a major challenge. Data centers are responsible for storing data provided by software applications. Nevertheless, the number of vulnerabilities has been increasing every day. Managing such vulnerabilities is essential for building a reliable and secure network environment. Releasing patches to fix security flaws in software is a common practice to handle these vulnerabilities. However, prioritization becomes crucial for organizations with an increasing number of vulnerabilities since time and resources to fix them are usually limited. This review intends to present a survey of vulnerability ranking techniques and promote a discussion on how multi-objective optimization could benefit the management of vulnerabilities risk prioritization. The state-of-the-art approaches for risk prioritization were reviewed, intending to develop an effective model for ranking vulnerabilities in data centers. The main contribution of this work is to point out multi-objective optimization as a not commonly explored but promising strategy to prioritize vulnerabilities, enabling better time management and increasing security.

The ultrafast scattering dynamics of intersubband polaritons in dispersive cavities embedding GaAs/AlGaAs quantum wells are studied directly within their band structure using a non-collinear pump-probe geometry with phase-stable mid-infrared pulses. Selective excitation of the lower polariton at a frequency of ~25 THz and at a finite in-plane momentum, $k_{||}$, leads to the emergence of a narrowband maximum in the probe reflectivity at $k_{||}=0$. A quantum mechanical model identifies the underlying microscopic process as stimulated coherent polariton-polariton scattering. These results mark an important milestone towards quantum control and bosonic lasing in custom-tailored polaritonic systems in the mid and far-infrared.

We demonstrate mid-infrared quantum cascade detectors (QCD) operating in the strong light-matter coupling regime. They operate around $\lambda = 10~\mu m$ with a minimum Rabi splitting of 9.3 meV. A simple model based on the usual description of transport in QCDs does not reproduce the polaritonic features in the photo-current spectra. On the contrary, a more refined approach, based on the semi-classical coupled modes theory, is capable to reproduce both optical and electrical spectra with excellent agreement. By correlating absorption/photo-response with the simulations, we demonstrate that - in this system - resonant tunneling from the polaritonic states is the main extraction mechanism. The dark intersubband states are not involved in the process, contrary to what happens in electrically injected polaritonic emitters.

We theoretically study the coherent nonlinear response of electrons confined in semiconductor quantum wells under the effect of an electromagnetic radiation close to resonance with an intersubband transition. Our approach is based on the time-dependent Schr\"odinger-Poisson equation stemming from a Hartree description of Coulomb-interacting electrons. This equation is solved by standard numerical tools and the results are interpreted in terms of approximated analytical formulas. For growing intensity, we observe a redshift of the effective resonance frequency due to the reduction of the electric dipole moment and the corresponding suppression of the depolarization shift. The competition between coherent nonlinearities and incoherent saturation effects is discussed. The strength of the resulting optical nonlinearity is estimated across different frequency ranges from mid-IR to THz with an eye to ongoing experiments on Bose-Einstein condensation of intersubband polaritons and to the speculative exploration of quantum optical phenomena such as single-photon emission in the mid-IR and THz windows.

We present a mid-IR ($\lambda \approx$ 8.3 $\mu$m) quantum well infrared photodetector (QWIP) fabricated on a mid-IR transparent substrate, allowing photodetection with illumination from either the front surface or through the substrate. The device is based on a 400 nm-thick GaAs/AlGaAs semiconductor QWIP heterostructure enclosed in a metal-insulator-metal (MIM) cavity and hosted on a mid-IR transparent ZnSe substrate. Metallic stripes are symmetrically patterned by e-beam lithography on both sides of the active region. The detector spectral coverage spans from $\lambda \approx 7.15$ $\mu$m to $\lambda \approx 8.7$ $\mu$m by changing the stripe width L - from L = 1.0 $\mu$m to L = 1.3 $\mu$m - thus frequency-tuning the optical cavity mode. Both micro-FTIR passive optical characterizations and photocurrent measurements of the two-port system are carried out. They reveal a similar spectral response for the two detector ports, with an experimentally measured T$_{BLIP}$ of $\approx$ 200K., Comment: Copyright 2021 Mario Malerba, Mathieu Jeannin, Stefano Pirotta, Lianhe Li, Alexander Giles Davies, Edmund Linfield, Adel Bousseksou, Jean-Michel Manceau and Raffaele Colombelli. This article is distributed under a Creative Commons Attribution (CC BY) License. The following article has been submitted to APL Photonics. After it is published, it will be found at https://aip.scitation.org/journal/app

We experimentally resolve the dispersion of multiple vibro-polariton modes issued from the strong coupling of different vibrational bands of the methylene group (CH2) in a 2.56$\mu$m thick polyethylene film with the confined modes of a mid-infrared Fabry-Perot micro-cavity. We measure a Rabi frequency of 111 cm$^{-1}$ for the stretching doublet around 2950 cm$^{-1}$ and a Rabi frequency of 29 cm$^{-1}$ for the scissoring doublet around 1460 cm$^{-1}$. This simple experimental approach offers the possibility to accurately fit the measured molecular film dielectric function. We show that the polariton dispersion and Rabi splitting can be precisely predicted from numerical simulations, offering a valuable tool for the design of strongly coupled system and the development of novel molecular films with crystalline organization., Comment: Copyright 2021 Mario Malerba, Mathieu Jeannin, Paul Goulain, Adel Bousseksou, Raffaele Colombelli, Jean-Michel Manceau. This article is distributed under a Creative Commons Attribution (CC BY) License. The following article has been submitted to APL Photonics. After it is published, it will be found at https://aip.scitation.org/journal/app

The discovery of disease biomarkers from gene expression data has been greatly advanced by feature selection (FS) methods, especially using ensemble FS (EFS) strategies with perturbation at the data level (i.e., homogeneous, Hom-EFS) or method level (i.e., heterogeneous, Het-EFS). Here we proposed a Hybrid EFS (Hyb-EFS) design that explores both types of perturbation to improve the stability and the predictive power of candidate biomarkers. With this, Hyb-EFS aims to disrupt associations of good performance with a single dataset, single algorithm, or a specific combination of both, which is particularly interesting for better reproducibility of genomic biomarkers. We investigated the adequacy of our approach for microarray data related to four types of cancer, carrying out an extensive comparison with other ensemble and single FS approaches. Five FS methods were used in our experiments: Wx, Symmetrical Uncertainty (SU), Gain Ratio (GR), Characteristic Direction (GeoDE), and ReliefF. We observed that the Hyb-EFS and Het-EFS approaches attenuated the large performance variation observed for most single FS and Hom-EFS across distinct datasets. Also, the Hyb-EFS improved upon the stability of the Het-EFS within our domain. Comparing the Hyb-EFS and Het-EFS composed of the top-performing selectors (Wx, GR, and SU), our hybrid approach surpassed the equivalent heterogeneous design and the best Hom-EFS (Hom-Wx). Interestingly, the rankings produced by our Hyb-EFS reached greater biological plausibility, with a notably high enrichment for cancer-related genes and pathways. Thus, our experiments suggest the potential of the proposed Hybrid EFS design in discovering candidate biomarkers from microarray data. Finally, we provide an open-source framework to support similar analyses in other domains, both as a user-friendly application and a plain Python package., Comment: 22 pages, 11 figures, 1 table

We propose a unified description of intersubband absorption saturation for quantum wells inserted in a resonator, both in the weak and strong light-matter coupling regimes. We demonstrate how absorption saturation can be engineered. In particular we show that the saturation intensity increases linearly with the doping in the strong coupling regime, while it remains doping independent in weak coupling. Hence, countering intuition, the most suitable region to exploit low saturation intensities is not the ultra-strong coupling regime, but is instead at the onset of the strong light-matter coupling. We further derive explicit conditions for the emergence of bistability. This work sets the path towards yet unexisting ultrafast mid-infrared semiconductor saturable absorption mirrors (SESAMs) and bistable systems. As an example, we show how to design a mid-infrared SESAM with a three orders of magnitude reduction in saturation intensity, down to about 5 kW/cm2.

III-V semiconductor mid-infrared photodetectors based on intersubband transitions hold a great potential for ultra-high-speed operation up to several hundreds of GHz. In this work we exploit a ~350nm-thick GaAs/Al0.2Ga0.8As multi-quantum-well heterostructure to demonstrate heterodyne detection at 10um wavelength with a nearly flat frequency response up to 70GHz at room temperature, solely limited by the measurement system bandwidth. This is the broadest RF-bandwidth reported to date for a quantum-well mid-infrared photodetector. Responsivities of 0.15A/W and 1.5A/W are obtained at 300K and 77K respectively. To allow ultrafast operation and illumination at normal incidence, the detector consists of a 50Ohm coplanar waveguide, monolithically integrated with a 2D-array of sub-wavelength antennas, electrically interconnected by suspended wires. With this device architecture we obtain a parasitic capacitance of ~30fF, corresponding to the static capacitance of the antennas, yielding a RC-limited 3dB cutoff frequency >150GHz at 300K, extracted with a small-signal equivalent circuit model. Using this model, we quantitively reproduce the detector frequency response and find intrinsic roll-off time constants as low as 1ps at room temperature., Comment: The first version was updated, to correct some typos and add FigS5(b) to clarify the derivation of the detector circuit model

Applications relying on mid-infrared radiation (Mid-IR, $\lambda\sim$ 3-30 $\mu$m) have progressed at a very rapid pace in recent years, stimulated by scientific and technological breakthroughs. Mid-IR cameras have propelled the field of thermal imaging. And the invention of the quantum cascade laser (QCL) has been a milestone, making compact, semiconductor-based mid-IR lasers available to a vast range of applications. All the recent breakthrough advances stemmed from the development of a transformative technology. In addition to the generation and detection of light, a key functionality for most photonics systems is the electrical control of the amplitude and/or phase of an optical beam at ultra-fast rates (GHz or more). However, standalone, broadband, integrated modulators are missing from the toolbox of present mid-IR photonics integrated circuits and systems developers. We have developed a free-space amplitude modulator for mid-IR radiation ($\lambda\sim$ 10 $\mu$m) that can operate up to at least 1.5 GHz (-3dB cut-off at $\sim$ 750 MHz) and at room-temperature. The device relies on a semiconductor hetero-structure enclosed in a judiciously designed metal-metal optical resonator. At zero bias, it operates in the strong light-matter coupling regime up to 300K. By applying an appropriate bias, the device transitions to the weak coupling regime. The large change in reflectivity due to the disappearance of the polaritonic states is exploited to modulate the intensity of a mid-IR continuous-wave laser up to speeds of more than 1.5 GHz.

In contrast to interband excitons in undoped quantum wells, doped quantum wells do not display sharp resonances due to excitonic bound states. In these systems the effective Coulomb interaction between electrons and holes typically only leads to a depolarization shift of the single-electron intersubband transitions. Non-perturbative light-matter interaction in solid-state devices has been investigated as a pathway to tune optoelectronic properties of materials. A recent theoretical work [Cortese et al., Optica 6, 354 (2019)] predicted that, when the doped quantum wells are embedded in a photonic cavity, emission-reabsorption processes of cavity photons can generate an effective attractive interaction which binds electrons and holes together, leading to the creation of an intraband bound exciton. Spectroscopically, this bound state manifests itself as a novel discrete resonance which appears below the ionisation threshold only when the coupling between light and matter is increased above a critical value. Here we report the first experimental observation of such a bound state using doped GaAs/AlGaAs quantum wells embedded in metal-metal resonators whose confinement is high enough to permit operation in strong coupling. Our result provides the first evidence of bound states of charged particles kept together not by Coulomb interaction, but by the exchange of transverse photons. Light-matter coupling can thus be used as a novel tool in quantum material engineering, tuning electronic properties of semiconductor heterostructures beyond those permitted by mere crystal structures, with direct applications to mid-infrared optoelectronics.

Nanophotonic circuits using group III-nitrides on silicon are still lacking one key component: efficient electrical injection. In this paper we demonstrate an electrical injection scheme using a metal microbridge contact in thin III-nitride on silicon mushroom-type microrings that is compatible with integrated nanophotonic circuits with the goal of achieving electrically injected lasing. Using a central buried n-contact to bypass the insulating buffer layers, we are able to underetch the microring, which is essential for maintaining vertical confinement in a thin disk. We demonstrate direct current room-temperature electroluminescence with 440 mW/cm$^2$ output power density at 20 mA from such microrings with diameters of 30 to 50 $\mu$m. The first steps towards achieving an integrated photonic circuit are demonstrated.

Second-order optical nonlinearities can be greatly enhanced by orders of magnitude in resonantly excited nanostructures, theoretically predicted and experimentally investigated in a variety of semiconductor systems. These resonant nonlinearities continually attract attention, particularly in newly discovered materials, but tend not to be as efficient as currently predicted. This limits their exploitation in frequency conversion. Here, we present a clear-cut theoretical and experimental demonstration that the second-order nonlinear susceptibility can vary by orders of magnitude as a result of giant cancellation effects in systems with many confined quantum states. Using terahertz quantum cascade lasers as a model source to investigate interband and intersubband resonant nonlinearities, we show that these giant cancellations are a result of interfering second-order nonlinear contributions of light and heavy hole states. As well as of importance to understand and engineer the resonant optical properties of materials, this work can be employed as a new, extremely sensitive tool to elucidate the bandstructure properties of complex quantum well systems.

We developed a technique that enables to replace a metallic waveguide cladding with a low-index (n $\sim$ 1.4) material - CaF2 or BaF2 - that in addition is transparent from the mid-IR up to the visible range: elevated confinement is preserved while introducing an optical entryway through the substrate. Replacing the metallic backplane also allows double-side patterning of the active region. Using this approach, we demonstrate strong light-matter coupling between an intersubband transition (lambda $\sim$ 10 microns) and a dispersive resonator, at 300 K and at 78 K. Finally, we evaluate the potential of this approach as a platform for waveguiding in the mid-IR spectral range, with numerical simulations that reveal losses in the 1-10 cm$^{-1}$ range., Comment: just accepted in optics express

We demonstrate that a ionising transition can be strongly coupled to a photonic resonance. The strong coupling manifests itself with the appearance of a narrow optically active resonance below the ionisation threshold. Such a resonance is due to electrons transitioning into a novel bound state created by the collective coupling of the electron gas with the vacuum field of the photonic resonator. Applying our theory to the case of bound-to-continuum transitions in microcavity-embedded doped quantum wells, we show how those strong-coupling features can be exploited as a novel knob to tune both optical and electronic properties of semiconductor heterostructures., Comment: 10 pages, 7 figures

We report experimental evidence of longitudinal optical (LO) phonon-intersubband polariton scattering processes under resonant injection of light. The scattering process is resonant with both the initial (upper polariton) and final (lower polariton) states and is induced by the interaction of confined electrons with longitudinal optical phonons. The system is optically pumped with a mid-IR laser tuned between 1094 cm-1 and 1134 cm-1 (lambda=9.14 um and lambda=8.82 um). The demonstration is provided for both GaAs/AlGaAs and InGaAs/AlInAs doped quantum well systems whose intersubband plasmon lies at lambda=10 um wavelength. In addition to elucidating the microscopic mechanism of the polariton-phonon scattering, that is found to differ substantially from the standard single particle electron-LO phonon scattering mechanism, this work constitutes the first step towards the hopefully forthcoming demonstration of an intersubband polariton laser., Comment: 10 pages, 5 figures

Terahertz (THz) and sub-THz frequency emitter and detector technologies are receiving increasing attention, underpinned by emerging applications in ultra-fast THz physics, frequency-combs technology and pulsed laser development in this relatively unexplored region of the electromagnetic spectrum. In particular, semiconductor-based ultrafast THz receivers are required for compact, ultrafast spectroscopy and communication systems, and to date, quantum well infrared photodetectors (QWIPs) have proved to be an excellent technology to address this given their intrinsic ps-range response However, with research focused on diffraction-limited QWIP structures (lambda/2), RC constants cannot be reduced indefinitely, and detection speeds are bound to eventually meet un upper limit. The key to an ultra-fast response with no intrinsic upper limit even at tens of GHz is an aggressive reduction in device size, below the diffraction limit. Here we demonstrate sub-wavelength (lambda/10) THz QWIP detectors based on a 3D split-ring geometry, yielding ultra-fast operation at a wavelength of around 100 {\mu}m. Each sensing meta-atom pixel features a suspended loop antenna that feeds THz radiation in the ~20 m3 active volume. Arrays of detectors as well as single-pixel detectors have been implemented with this new architecture, with the latter exhibiting ultra-low dark currents below the nA level. This extremely small resonator architecture leads to measured optical response speeds - on arrays of 300 devices - of up to ~3 GHz and an expected device operation of up to tens of GHz, based on the measured S-parameters on single devices and arrays.

We demonstrate that intersubband (ISB) polaritons are robust to inhomogeneous effects originating from the presence of multiple quantum wells (MQWs). In a series of samples that exhibit mid-infrared ISB absorption transitions with broadenings varying by a factor of 5 (from 4 meV to 20meV), we have observed polariton linewidths always lying in the 4 - 7 meV range only. We have experimentally verified the dominantly inhomogeneous origin of the broadening of the ISB transition, and that the linewidth reduction effect of the polariton modes persists up to room-temperature. This immunity to inhomogeneous broadening is a direct consequence of the coupling of the large number of ISB oscillators to a single photonic mode. It is a precious tool to gauge the natural linewidth of the ISB plasmon , that is otherwise masked in such MQWs system , and is also beneficial in view of perspective applications such as intersubband polariton lasers.