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Improving the stability of lead halide perovskite solar cells (PSCs) for industrialization is currently a major challenge. It is shown that moisture induces changes in global PSC performance, altering the nature of the absorber through phase transition or segregation. Understanding how the material evolves in a wet environment is crucial for optimizing device performance and stability. Here, the chemical and structural evolution of state‐of‐the‐art hybrid perovskite thin‐film Cs0.05(MA0.15FA0.85)0.95Pb(I0.84 Br0.16)3 (CsMAFA) is investigated after aging under controlled humidity with analytical characterization techniques. The analysis is performed at different scales through Photoluminescence, X‐ray Diffraction Spectroscopy, Cathodoluminescence, Selected Area Electron Diffraction, and Energy Dispersive X‐ray Spectroscopy. From the analysis of the degradation products from the perovskite layer and by the correlation of their optical and chemical properties at a microscopic level, different phases such as lead–iodide (PbI2), inorganic mixed halide CsPb(I0.9Br0.1)3 and lead‐rich CsPb2(I0.74Br0.26)5 perovskite are evidenced. These phases demonstrate a high degree of crystallinity that induces unique geometrical shapes and drastically affects the optoelectronic properties of the thin film. By identifying the precise nature of these specific species, the multi‐scale approach provides insights into the degradation mechanisms of hybrid perovskite materials, which can be used to improve PSC stability. [ABSTRACT FROM AUTHOR]

Hot-carrier solar cells offer the opportunity to harvest more energy than the limit set by the Shockley–Queisser model by reducing the losses due to the thermalization of photo-generated carriers. Previous reports have shown lower thermalization rates in thinner absorbers, but the origin of this phenomenon is not precisely understood. In this work, we investigate a series of ultrathin GaAs absorber layers sandwiched between AlGaAs barriers and transferred on host substrates with a gold back mirror. We perform power-dependent photoluminescence characterizations at different laser wavelengths from which we determine the carrier temperature in four absorber thicknesses between 20 and 200 nm. We observe a linear relationship between the absorbed power and the carrier temperature increase. By relating the absorbed and thermalized power, we extract a thermalization coefficient for all samples. It shows an affine dependence with the thickness, leading to the identification of distinct volume and surface contributions to thermalization. We confirm that volume thermalization is linked to LO phonon decay. We discuss the origin of the interface-related thermalization, showing that the effect of LO phonon transport is negligible. Overall, this work sheds new light on thermalization processes in ultrathin semiconductor layers and introduces a method to compare the performance of hot-carrier absorbers. [ABSTRACT FROM AUTHOR]

Observation of robust hot carrier effects in quantum-well structures has prompted hopes to increase the efficiency of solar cells beyond the Shockley–Queisser limit (33% for single junction solar cells at AM1.5G). One of the main studies in hot carrier effects is the determination of carrier temperature, which provides information on the thermalization mechanisms of hot carriers in semiconductor materials. Here, we investigate the spatial distribution of photo-generated hot carriers in a InGaAs multi-quantum-well structure via hyperspectral luminescence imaging. We discuss proper methods of extracting the temperature of carriers from a photoluminescence spectrum. Robust hot carrier effects are observed at the center of the laser spot at various lattice temperatures. In addition, it is seen that the local carrier temperature scales linearly with the local laser intensity as long as the illumination exceeds a threshold power; the carrier temperature at regions with local intensities below the threshold drops to the lattice temperature, i.e., experiences no hot carrier effects. Moreover, at large distances from the concentrated light, where the level of illumination is negligible, evidence of carrier radiative recombination is observed, which is attributed to carrier diffusion in the planar structure. The results of this study can be applied to investigate the influence of carrier diffusion and thermoelectric effects on the thermalization of hot carriers. [ABSTRACT FROM AUTHOR]

Hot-carrier solar cells could enable an efficiency gain compared to conventional cells, provided that a high current can be achieved, together with a hot-carrier population. Because the thermalization rate is proportional to the volume of the absorber, a fundamental requirement is to maximize the density of carriers generated per volume unit. In this work, we focus on the crucial role of light trapping to meet this objective. Using a detailed balance model taking into account losses through a thermalization factor, we obtained parameters of the hot-carrier population generated under continuous illumination. Different absorptions corresponding to different light path enhancements were compared. Results are presented for open-circuit voltage, at maximum power point and as a function of the applied voltage. The relation between the parameters of the cell (thermalization rate and absorptivity) and its characteristics (temperature, chemical potential, and efficiency) is explained. In particular, we clarify the link between absorbed light intensity and chemical potential. Overall, the results give quantitative values for the thermalization coefficient to be achieved and show that in the hot-carrier regime, absorptivity enhancement leads to an important increase in the carrier temperature and efficiency.

We determine the grain-boundary (GB) recombination velocity, S G B , and grain-interior (GI) lifetime, τ G I , parameters in superstrate CdS/CdTe thin-film solar cell technology by combining cathodoluminescence (CL) spectrum imaging and time-resolved photoluminescence (TRPL) measurements. We consider critical device formation stages, including after CdTe deposition, CdCl2 treatment, and Cu diffusion. CL image analysis methods extract GB and GI intensities and grain size for hundreds of grains per sample. Concurrently, a three-dimensional CL model is developed to simulate the GI intensity as a function of τ G I , S G B , grain size, and the surface recombination velocity, S surf . TRPL measurements provide an estimate of S surf for the CL model. A fit of GI intensity vs. grain size data with the CL model gives a self-consistent and representative set of S G B and τ G I values for the samples: S G B (τ G I) = 2.6 × 106 cm/s (68–250 ps), S G B (τ G I) = 4.1 × 105 cm/s (1.5–3.3 ns), and S G B (τ G I) = 5.5 × 105 cm/s (1.0–3.8 ns) for as-deposited, CdCl2-treated, and CdCl2- and Cu-treated samples, respectively. Thus, we find that the CdCl2 treatment both helps to passivate GBs and significantly increase the GI lifetime. Subsequent Cu diffusion increases GB recombination slightly and has nuanced effects on the GI lifetime. Finally, as a partial check on the S G B and τ G I values, they are input to a Sentaurus device model, and the simulated performance is compared to the measured performance. The methodology developed here can be applied broadly to CdTe and CdSeTe thin-film technology and to other thin-film solar cell materials including Cu(In1-xGax)Se2, Cu2ZnSnS4, and perovskites. [ABSTRACT FROM AUTHOR]