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3. Characterization and modeling of 650V GaN diodes for high frequency power conversion

Author

Defrance Nicolas, Yvon Arnaud, Idir Nadir, Doublet Martin, Okada Etienne, Duquesne Thierry, Pace Loris, Collard Emmanuel, De-Jaeger Jean-Claude, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Puissance - IEMN (PUISSANCE - IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Plateforme de Caractérisation Multi-Physiques - IEMN (PCMP - IEMN), This work was supported by IPCEI French Nano2022 program., PCMP CHOP, Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Laboratoire d’Électrotechnique et d’Électronique de Puissance - ULR 2697 (L2EP), Centrale Lille-Université de Lille-Arts et Métiers Sciences et Technologies, HESAM Université - Communauté d'universités et d'établissements Hautes écoles Sorbonne Arts et métiers université (HESAM)-HESAM Université - Communauté d'universités et d'établissements Hautes écoles Sorbonne Arts et métiers université (HESAM)-JUNIA (JUNIA), STMicroelectronics [Tours] (ST-TOURS), and Laboratoire commun STMicroelectronics-IEMN T1

Subjects
Materials science, diode, model, Frequency band, business.industry, s-parameters, Gallium nitride, High-electron-mobility transistor, 7. Clean energy, [SPI.TRON]Engineering Sciences [physics]/Electronics, chemistry.chemical_compound, chemistry, Scattering parameters, Silicon carbide, Equivalent circuit, Optoelectronics, power converter, Power semiconductor device, characterization, gallium nitride (GaN), business, Diode
Abstract

POSTER 6; International audience; The constant growth of electric consumption leads to considerable progress in power conversion. Recent studies have shown that using Gallium Nitride (GaN) as a technological building bloc permits to develop converter operating at high frequency with reduced volume and weight. Furthermore, it is conceivable the monolithic co-integration of devices towards full-GaN switching cells. Therefore, characterization of GaN power devices is needed to provide accurate models in a wide frequency band in order to design new generations of converters. An innovative modeling method for GaN High Electron Mobility Transistor (HEMT) power transistors based on the use of Scattering parameters (Sparameters) and small-signal equivalent circuit was recently developed and validated in previous studies. Meanwhile, the demand concerning GaN diodes increases, pushing forward the need for dedicated electric model. Through S-parameters, current-voltage and current-collapse measurements, this paper presents the characterization of packaged GaN diodes with the aim to establish an accurate nonlinear model. The analyzed devices are still in the development phase, but initial results are very promising and get close to commercial SiC diodes available on the market.

Published
2021

7. Impact of rapid thermal annealing on Mg-implanted GaN with a SiO x /AlN cap-layer

Author

Khalfaoui, Wahid, Oheix, Thomas, El-Zammar, Georgio, Benoit, Roland, Cayrel, Frédéric, Faulques, Eric, Massuyeau, Florian, Yvon, Arnaud, Collard, Emmanuel, Alquier, Daniel, Interfaces, Confinement, Matériaux et Nanostructures ( ICMN), Université d'Orléans (UO)-Centre National de la Recherche Scientifique (CNRS), GREMAN (matériaux, microélectronique, acoustique et nanotechnologies) (GREMAN - UMR 7347), Université de Tours-Institut National des Sciences Appliquées - Centre Val de Loire (INSA CVL), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Institut des Matériaux Jean Rouxel (IMN), Université de Nantes - UFR des Sciences et des Techniques (UN UFR ST), Université de Nantes (UN)-Université de Nantes (UN)-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Ecole Polytechnique de l'Université de Nantes (EPUN), Université de Nantes (UN)-Université de Nantes (UN), STMicroelectronics [Tours] (ST-TOURS), Institut National des Sciences Appliquées - Centre Val de Loire (INSA CVL), and Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université de Tours (UT)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], GaN
Abstract

International audience; Local p-type doping in GaN is a key issue for device development but it remains a challenge to be achieved. In this work, we studied the activation of Mg implanted in the GaN. Multi-energy implantations were performed to achieve a “box-like” profile. SIMS measurements showed unexpected deep Mg profile due to defect-assisted channeling in the GaN. In addition, a high-density defect region induced by the implantation was evidenced by TEM characterization. To protect the GaN surface prior to high temperature annealing, an AlN cap-layer was deposited by reactive sputtering followed by SiOx deposition leading to a double cap-layer. Afterwards, the capped samples were RTA-annealed at high temperatures for several minutes under nitrogen. Two types of annealing processes were applied: a monocycle and a multicycle annealing. After annealing, the double cap-layer was etched using chemical solutions. AFM characterizations, after annealing and cap-layer etching, demonstrated that a GaN surface with similar roughness to as-grown samples and pit-free can be achieved after both monocycle and multicycle annealing steps. However, an AlGaN layer at the AlN/GaN interface is observed by ToF-SIMS and remained after the etching of the AlN layer. Finally, Schottky diodes were processed on the unimplanted and annealed samples, evidencing a double barrier, while P/N junction diodes are still being processed on the implanted and annealed samples.

Published
2017
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8. Structure bipolaire bidirectionnelle en courant et en tension sur silicium (BipAC)

Author

Rizk, Hiba, Tahir, Hakim, Bourennane , Abdelhakim, Laur, Jean-Pierre, Breil-Dupuy, Marie, Morillon, Benjamin, MENARD, SAMUEL, COLLARD, EMMANUEL, Équipe Intégration de Systèmes de Gestion de l'Énergie (LAAS-ISGE), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées, STMicroelectronics [Tours] (ST-TOURS), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), and Université de Toulouse (UT)

Subjects
[SPI.NRJ]Engineering Sciences [physics]/Electric power
Abstract

Cet article présente une architecture de structure bipolaire bidirectionnelle en courant et en tension (BipAC) pour des applications de gestion d'énergie sur le réseau alternatif 230V-50Hz. La structure bipolaire que nous proposons est une structure verticale bidirectionnelle, commandable à la fermeture et à l'ouverture, réalisable sur substrat N (type PNP) ou P (type NPN). Sa faible chute de tension à l'état passant et sa commande ON/OFF avec une seule électrode de référence la rendent intéressante pour des applications spécifiques à faible niveau de courant (inférieur à 1A). Cette étude s'appuie sur des simulations physiques 2D effectuées à l'aide du logiciel Sentaurus.

Published
2014

12. Impact of rapid thermal annealing on Mg-implanted GaN with a SiO x/AlN cap-layer.

Author

Khalfaoui, Wahid, Oheix, Thomas, El‐Zammar, Georgio, Benoit, Roland, Cayrel, Frederic, Faulques, Eric, Massuyeau, Florian, Yvon, Arnaud, Collard, Emmanuel, and Alquier, Daniel

Subjects
ALUMINUM nitrate, MAGNESIUM compounds, THERMAL properties of metals, ANNEALING of metals, IMPACT (Mechanics), DOPING agents (Chemistry)
Abstract

Local p-type doping in GaN is a key issue for device development but it remains a challenge to be achieved. In this work, we studied the activation of Mg implanted in the GaN. Multi-energy implantations were performed to achieve a 'box-like' profile. SIMS measurements showed unexpected deep Mg profile due to defect-assisted channeling in the GaN. In addition, a high-density defect region induced by the implantation was evidenced by TEM characterization. To protect the GaN surface prior to high temperature annealing, an AlN cap-layer was deposited by reactive sputtering followed by SiO x deposition leading to a double cap-layer. Afterwards, the capped samples were RTA-annealed at high temperatures for several minutes under nitrogen. Two types of annealing processes were applied: a monocycle and a multicycle annealing. After annealing, the double cap-layer was etched using chemical solutions. AFM characterizations, after annealing and cap-layer etching, demonstrated that a GaN surface with similar roughness to as-grown samples and pit-free can be achieved after both monocycle and multicycle annealing steps. However, an AlGaN layer at the AlN/GaN interface is observed by ToF-SIMS and remained after the etching of the AlN layer. Finally, Schottky diodes were processed on the unimplanted and annealed samples, evidencing a double barrier, while P/N junction diodes are still being processed on the implanted and annealed samples. [ABSTRACT FROM AUTHOR]

Published
2017
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23. Al-Si-Ti Ohmic Contacts on N-Type Gallium Nitride

Author

Thierry-Jebali, Nicolas, primary, Ménard, Olivier, additional, Yvon, Arnaud, additional, Collard, Emmanuel, additional, Zhe, Miao, additional, Dezellus, Olivier, additional, Brylinski, Christian, additional, and Viala, Jean Claude, additional

Published
2011
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31. Si+ Implantation and Activation in GaN Comparison of GaN on Sapphire and GaN on Silicon

Author

Bazin, Anne Elisabeth, Cayrel, Frédéric, Lamhamdi, Mohamed, Yvon, Arnaud, Houdbert, Jean Christophe, Collard, Emmanuel, and Alquier, Daniel

Abstract

n this paper, we evaluated gallium nitride heteroepitaxially grown on sapphire (GaN/Sa) and grown on silicon (GaN/Si) faced to implantation doping. Si+ was implanted on low doped n-type epilayers in order to create a plateau around 1020at.cm-3. All the samples were capped with a silicon oxide and annealed between 1000°C and 1150°C. The surface quality was evaluated in terms of roughness, pit density and maximum pit diameter using Atomic Force Microscopy (AFM) and Scanning Electron Microscopy (SEM). Finally, the dopant electrical activation was studied with Ti-Al contacts using the circular Transfert Length Method (c-TLM). This study shows that low Specific Contact Resistance (SCR) values of 8x10-5Ω.cm2 and 6x10-6Ω.cm2 are respectively obtained on GaN/Sa sample annealed at 1150°C-2min and on GaN/Si sample annealed at 1150°C-30s, proving that good ohmic contacts are obtained on both materials. Nevertheless, a compromise has to be done between the low SCR values obtained and the GaN surface degradation, observed by AFM and SEM after the different annealing treatments and which could affect the good behaviour of the GaN devices.

Published
2012
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33. Impact of rapid thermal annealing on Mg‐implanted GaN with a SiOx/AlN cap‐layer

Author

Khalfaoui, Wahid, Oheix, Thomas, El‐Zammar, Georgio, Benoit, Roland, Cayrel, Frederic, Faulques, Eric, Massuyeau, Florian, Yvon, Arnaud, Collard, Emmanuel, and Alquier, Daniel

Abstract

Local p‐type doping in GaN is a key issue for device development but it remains a challenge to be achieved. In this work, we studied the activation of Mg implanted in the GaN. Multi‐energy implantations were performed to achieve a “box‐like” profile. SIMS measurements showed unexpected deep Mg profile due to defect‐assisted channeling in the GaN. In addition, a high‐density defect region induced by the implantation was evidenced by TEM characterization. To protect the GaN surface prior to high temperature annealing, an AlN cap‐layer was deposited by reactive sputtering followed by SiOxdeposition leading to a double cap‐layer. Afterwards, the capped samples were RTA‐annealed at high temperatures for several minutes under nitrogen. Two types of annealing processes were applied: a monocycle and a multicycle annealing. After annealing, the double cap‐layer was etched using chemical solutions. AFM characterizations, after annealing and cap‐layer etching, demonstrated that a GaN surface with similar roughness to as‐grown samples and pit‐free can be achieved after both monocycle and multicycle annealing steps. However, an AlGaN layer at the AlN/GaN interface is observed by ToF‐SIMS and remained after the etching of the AlN layer. Finally, Schottky diodes were processed on the unimplanted and annealed samples, evidencing a double barrier, while P/N junction diodes are still being processed on the implanted and annealed samples.

Published
2017
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