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Synchronization of electrical oscillators is a crucial step toward practical implementation of oscillator-based and bio-inspired computing. Here, we report the emergence of an unusual stochastic pattern in coupled spiking Mott nanodevices. Although a moderate capacitive coupling results in a deterministic alternating spiking, increasing the coupling strength leads counterintuitively to stochastic disruptions of the alternating spiking sequence. The disruptions of the deterministic spiking sequence are a direct consequence of the small intrinsic stochasticity in electrical triggering of the insulator–metal transition. Although the stochasticity is subtle in individual nanodevices, it becomes dramatically enhanced just in a single pair of coupled oscillators and, thus, dominates the synchronization. This is different from the stochasticity and multimodal coupling, appearing due to collective effects in large oscillator networks. The stochastic spiking pattern in Mott nanodevices results in a discrete inter-spike interval distribution resembling those in biological neurons. Our results advance the understanding of the emergent synchronization properties in spiking oscillators and provide a platform for hardware-level implementation of probabilistic computing and biologically plausible electronic devices.

Vanadium dioxide (VO2), which exhibits a near-room-temperature insulator-metal transition, has great potential in applications of neuromorphic computing devices. Although its volatile switching property, which could emulate neuron spiking, has been studied widely, nanoscale studies of the structural stochasticity across the phase transition are still lacking. In this study, using in situ transmission electron microscopy and ex situ resistive switching measurement, we successfully characterized the structural phase transition between monoclinic and rutile VO2 at local areas in planar VO2/TiO2 device configuration under external biasing. After each resistive switching, different VO2 monoclinic crystal orientations are observed, forming different equilibrium states. We have evaluated a statistical cycle-to-cycle variation, demonstrated a stochastic nature of the volatile resistive switching, and presented an approach to study in-plane structural anisotropy. Our microscopic studies move a big step forward toward understanding the volatile switching mechanisms and the related applications of VO2 as the key material of neuromorphic computing.

Vanadium dioxide (VO(2)), which exhibits a near-room-temperature insulator–metal transition, has great potential in applications of neuromorphic computing devices. Although its volatile switching property, which could emulate neuron spiking, has been studied widely, nanoscale studies of the structural stochasticity across the phase transition are still lacking. In this study, using in situ transmission electron microscopy and ex situ resistive switching measurement, we successfully characterized the structural phase transition between monoclinic and rutile VO(2) at local areas in planar VO(2)/TiO(2) device configuration under external biasing. After each resistive switching, different VO(2) monoclinic crystal orientations are observed, forming different equilibrium states. We have evaluated a statistical cycle-to-cycle variation, demonstrated a stochastic nature of the volatile resistive switching, and presented an approach to study in-plane structural anisotropy. Our microscopic studies move a big step forward toward understanding the volatile switching mechanisms and the related applications of VO(2) as the key material of neuromorphic computing.

Experimental Data fromthe paper 'Spatiotemporal characterization of the field-induced insulator-to-metal transition' by Javier del Valle et al.

The coupling of electronic degrees of freedom in materials to create hybridized functionalities is a holy grail of modern condensed matter physics that may produce novel mechanisms of control. Correlated electron systems often exhibit coupled degrees of freedom with a high degree of tunability which sometimes lead to hybridized functionalities based on external stimuli. However, the mechanisms of tunability and the sensitivity to external stimuli are determined by intrinsic material properties which are not always controllable. A Mott metal-insulator transition, which is technologically attractive due to the large changes in resistance, can be tuned by doping, strain, electric fields, and orbital occupancy but cannot be, in and of itself, controlled externally with light. Here we present a new approach to produce hybridized functionalities using a properly engineered photoconductor/strongly-correlated hybrid heterostructure, showing control of the Metal-to-Insulator transition (MIT) using optical means. This approach combines a photoconductor, which does not exhibit an MIT, with a strongly correlated oxide, which is not photoconducting. Due to the close proximity between the two materials, the heterostructure exhibits large volatile and nonvolatile, photoinduced resistivity changes and substantial photoinduced shifts in the MIT transition temperatures. This approach can potentially be extended to other judiciously chosen combinations of strongly correlated materials with systems which exhibit optically, electrically or magnetically controllable behavior.

Many correlated systems feature an insulator-to-metal transition that can be triggered by an electric field. Although it is known that metallization takes place through filament formation, the details of how this process initiates and evolves remain elusive. We use in-operando optical reflectivity to capture the growth dynamics of the metallic phase with space and time resolution. We demonstrate that filament formation is triggered by nucleation at hotspots, with a subsequent expansion over several decades in time. By comparing three case studies (VO2, V3O5, and V2O3), we identify the resistivity change across the transition as the crucial parameter governing this process. Our results provide a spatiotemporal characterization of volatile resistive switching in Mott insulators, which is important for emerging technologies, such as optoelectronics and neuromorphic computing.

A great challenge in the field of neurocomputing is to mimic the brain behavior by implementing artificial synapses and neurons directly in hardware. This work shows that a Leaky Integrate and Fire (LIF) artificial neuron can be realized with a two-terminal device made of Mott insulator thin films. Polycrystalline thin films of the well-known Mott insulator oxide (V0.95Cr0.05)2O3 were deposited by magnetron sputtering and patterned with micron-scale TiN electrodes. These devices exhibit a volatile resistive switching and a remarkable LIF behavior under a train of pulses suggesting that LIF artificial neurons may be realized from (V0.95Cr0.05)2O3 thin films.

Out of equilibrium phenomena are a major issue of modern physics. In particular, correlated materials such as Mott insulators experience fascinating long-lived exotic states under a strong electric field. Yet, the origin of their destabilization by the electric field is not elucidated. Here we present a comprehensive study of the electrical response of canonical Mott insulators GaM4Q8 (M=V, Nb, Ta, Mo; Q=S, Se) in the context of a microscopic theory of electrical breakdown where in-gap states allow for a description in terms of a two-temperature model. Our results show how the nonlinearities and the resistive transition originate from a massive creation of hot electrons under an electric field. These results give new insights for the control of the long-lived states reached under an electric field in these systems which has recently open the way to new functionalities used in neuromorphic applications. Fil: Diener, P.. Universite de Nantes; Francia Fil: Janod, E.. Universite de Nantes; Francia Fil: Corraze, B.. Universite de Nantes; Francia Fil: Querré, M.. Universite de Rennes I. Institut Des Sciences Chimiques de Rennes.; Francia. Universite de Nantes; Francia Fil: Adda, C.. Universite de Nantes; Francia Fil: Guilloux Viry, M.. Universite de Rennes I. Institut Des Sciences Chimiques de Rennes.; Francia Fil: Cordier, S.. Universite de Rennes I. Institut Des Sciences Chimiques de Rennes.; Francia Fil: Camjayi, Alberto. Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Ciudad Universitaria. Instituto de Física de Buenos Aires. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales. Instituto de Física de Buenos Aires; Argentina Fil: Rozenberg, Marcelo Javier. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Université Paris Sud; Francia Fil: Besland, M. P.. Universite de Nantes; Francia Fil: Cario, L.. Universite de Nantes; Francia

Cellulose nanocrystals (CNCs) are shown to be able to disperse in a very efficient way both single-walled (SWNTs) and multiwalled carbon nanotubes (MWNTs). Optimization of the processing parameters (sonication time and power) leads to dispersion yields as high as 70 wt % for both types of carbon nanotubes (CNTs). Such a high dispersion yield obtained in a noncovalent way with biobased nanoparticles is noteworthy and deserves further attention. Atomic force microscopy and transmission electron microscopy images suggest that the CNCs and the nanotubes form hybrids, with the stabilization of the dispersion arising from both the irreversible adsorption of the CNCs onto the nanotubes and the electrostatic repulsion between the CNCs. A quantitative model is proposed, revealing that one CNC can stabilize one SWNT three times its length in the aqueous dispersion and that more CNCs are required in the case of MWNTs. This model allows us to control the dispersion yield as a function of the processing parameters.

Linear electronic band dispersion and the associated Dirac physics has to date been limited to special-case materials, notably graphene and the surfaces of three-dimensional (3D) topological insulators. Here we report that it is possible to create two-dimensional fully conjugated polymer networks with corresponding conical valence and conduction bands and linear energy dispersion at the Fermi level. This is possible for a wide range of polymer types and connectors, resulting in a versatile new family of experimentally realisable materials with unique tuneable electronic properties. We demonstrate their stability on substrates and possibilities for doping and Dirac cone distortion. Notably, the cones can be maintained in 3D-layered crystals. Resembling covalent organic frameworks, these materials represent a potentially exciting new field combining the unique Dirac physics of graphene with the structural flexibility and design opportunities of organic-conjugated polymer chemistry.

International audience; A major challenge in the field of neurocomputing is to mimic the brain's behavior by implementing artificial synapses and neurons directly in hardware. Toward that purpose, many researchers are exploring the potential of new materials and new physical phenomena. Recently, a new concept of the Leaky Integrate and Fire (LIF) artificial neuron was proposed based on the electric Mott transition in the inorganic Mott insulator GaTa4Se8. In this work, we report on the LIF behavior in simple two-terminal devices in three chemically very different compounds, the oxide (V0.89Cr0.11)2O3, the sulfide GaMo4S8, and the molecular system [Au(iPr-thiazdt)2] (C12H14AuN2S8), but sharing a common feature, their Mott insulator ground state. In all these devices, the application of an electric field induces a volatile resistive switching and a remarkable LIF behavior under a train of pulses. It suggests that the Mott LIF neuron is a general concept that can be extended to the large class of Mott insulators. © 2018 Author(s).

International audience