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Antiferroelectrics, which undergo a field-induced phase transition to ferroelectric order that manifests as double-hysteresis polarization switching, exhibit great potential for dielectric, electromechanical, and electrothermal applications. Compared to their ferroelectric cousins, however, considerably fewer efforts have been made to understand and control antiferroelectrics. Here, it is demonstrated that the polarization switching behavior of an antiferroelectric can be strongly influenced and effectively regulated by point defects. In films of the canonical antiferroelectric PbZrO3 , decreasing oxygen pressure during deposition (and thus increasing adatom kinetic energy) causes unexpected "ferroelectric-like" polarization switching although the films remain in the expected antiferroelectric orthorhombic phase. This "ferroelectric-like" switching is correlated with the creation of bombardment-induced point-defect complexes which pin the antiferroelectric-ferroelectric phase boundaries, and thus effectively delay the phase transition under changing field. The effective pinning energy is extracted via temperature-dependent switching-kinetics studies. In turn, by controlling the concentration of defect complexes, the dielectric tunability of the PbZrO3 can be adjusted, including being able to convert between "positive" and "negative" tunability near zero field. This work reveals the important role and strong capability of defects to engineer antiferroelectrics for new performance and functionalities.

In this study, the Raman biaxial stress coefficients KII and strain-free phonon frequencies ω0 have been determined for the E2 (low), E2 (high), and A1 (LO) phonon modes of aluminum nitride, AlN, using both experimental and theoretical approaches. The E2 (high) mode of AlN is recommended for the residual stress analysis of AlN due to its high sensitivity and the largest signal-to-noise ratio among the studied modes. The E2 (high) Raman biaxial stress coefficient of −3.8 cm−1/GPa and strain-free phonon frequency of 656.68 cm−1 were then applied to perform both macroscopic and microscopic stress mappings. For macroscopic stress evaluation, the spatial variation of residual stress was measured across an AlN-on-Si wafer prepared by sputter deposition. A cross-wafer variation in residual stress of ∼150 MPa was observed regardless of the average stress state of the film. Microscopic stress evaluation was performed on AlN piezoelectric micromachined ultrasonic transducers (pMUTs) with submicrometer spatial resolution. These measurements were used to assess the effect of device fabrication on residual stress distribution in an individual pMUT and the effect of residual stress on the resonance frequency. At ∼20 μm directly outside the outer edge of the pMUT electrode, a large lateral spatial variation in residual stress of ∼100 MPa was measured, highlighting the impact of metallization structures on residual stress in the AlN film. [ABSTRACT FROM AUTHOR]

The ambient humidity significantly accelerates the degradation of lead zirconate titanate (PZT) films in microelectromechanical systems; the cause of such degradation is under debate. Here, it is shown that the degradation of chemical solution derived PZT thin-films in humid conditions is driven by the system's electrochemical activity toward water electrolysis. The layer stacks with Pt-based electrodes exhibited a faster degradation rate owing to their higher electrocatalytic activity compared to Au. A degradation model is proposed based on the electrolysis of liquid or gaseous H2O, involving the evolution of oxygen and hydrogen gas at the top and bottom electrodes. Degradation proceeds above the threshold voltage for a given electrode system and is driven by the evolution and pressure build-up of gaseous species at the PZT/electrode interfaces. The pressure build-up causes film cracking, delamination of the film and electrodes, electrothermal breakdown events, and eventually time-dependent dielectric breakdown. Significantly larger post-breakdown crater sizes in humid than in dry conditions suggests that larger cracks through which dielectric breakdown through humidified air can occur. Overall, these effects are shown to cause sample failure up to six orders of magnitude of time earlier than for operation in dry conditions. Thus, in order to improve the resilience of thin-film systems in humid conditions, it is imperative to protect the electrochemically active electrode components of the device. [ABSTRACT FROM AUTHOR]

N. J. Enfield's review of Information: A historical companion, edited by Ann Blair et al (July 15), is mistaken in claiming that the 10 million slips forming the database of [...]