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193 results on '"Colangeli, Sergio"'

1. Key-Components for Ultra-low DC Power Gallium Nitride Low-Noise Receivers

Author

Longhi, Patrick E., Ciccognani, Walter, Colangeli, Sergio, Limiti, Ernesto, Angrisani, Leopoldo, Series Editor, Arteaga, Marco, Series Editor, Chakraborty, Samarjit, Series Editor, Chen, Jiming, Series Editor, Chen, Shanben, Series Editor, Chen, Tan Kay, Series Editor, Dillmann, Rüdiger, Series Editor, Duan, Haibin, Series Editor, Ferrari, Gianluigi, Series Editor, Ferre, Manuel, Series Editor, Jabbari, Faryar, Series Editor, Jia, Limin, Series Editor, Kacprzyk, Janusz, Series Editor, Khamis, Alaa, Series Editor, Kroeger, Torsten, Series Editor, Li, Yong, Series Editor, Liang, Qilian, Series Editor, Martín, Ferran, Series Editor, Ming, Tan Cher, Series Editor, Minker, Wolfgang, Series Editor, Misra, Pradeep, Series Editor, Mukhopadhyay, Subhas, Series Editor, Ning, Cun-Zheng, Series Editor, Nishida, Toyoaki, Series Editor, Oneto, Luca, Series Editor, Panigrahi, Bijaya Ketan, Series Editor, Pascucci, Federica, Series Editor, Qin, Yong, Series Editor, Seng, Gan Woon, Series Editor, Speidel, Joachim, Series Editor, Veiga, Germano, Series Editor, Wu, Haitao, Series Editor, Zamboni, Walter, Series Editor, Zhang, Junjie James, Series Editor, Tan, Kay Chen, Series Editor, Ciofi, Carmine, editor, and Limiti, Ernesto, editor

Published
2024
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2. A Ka-Band Ultra-Low Power GaAs MMIC LNA

Author

Sharma, Shikha, Colangeli, Sergio, Longhi, Patrick, Ciccognani, Walter, Serino, Antonio, Limiti, Ernesto, Angrisani, Leopoldo, Series Editor, Arteaga, Marco, Series Editor, Chakraborty, Samarjit, Series Editor, Chen, Jiming, Series Editor, Chen, Shanben, Series Editor, Chen, Tan Kay, Series Editor, Dillmann, Rüdiger, Series Editor, Duan, Haibin, Series Editor, Ferrari, Gianluigi, Series Editor, Ferre, Manuel, Series Editor, Jabbari, Faryar, Series Editor, Jia, Limin, Series Editor, Kacprzyk, Janusz, Series Editor, Khamis, Alaa, Series Editor, Kroeger, Torsten, Series Editor, Li, Yong, Series Editor, Liang, Qilian, Series Editor, Martín, Ferran, Series Editor, Ming, Tan Cher, Series Editor, Minker, Wolfgang, Series Editor, Misra, Pradeep, Series Editor, Mukhopadhyay, Subhas, Series Editor, Ning, Cun-Zheng, Series Editor, Nishida, Toyoaki, Series Editor, Oneto, Luca, Series Editor, Panigrahi, Bijaya Ketan, Series Editor, Pascucci, Federica, Series Editor, Qin, Yong, Series Editor, Seng, Gan Woon, Series Editor, Speidel, Joachim, Series Editor, Veiga, Germano, Series Editor, Wu, Haitao, Series Editor, Zamboni, Walter, Series Editor, Zhang, Junjie James, Series Editor, Tan, Kay Chen, Series Editor, Ciofi, Carmine, editor, and Limiti, Ernesto, editor

Published
2024
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5. Low-Noise Amplifiers in Gallium Nitride for Robust and Highly Linear Ka-Band SATCOM

Author

Longhi, Patrick Ettore, Pace, Lorenzo, Ciccognani, Walter, Colangeli, Sergio, Limiti, Ernesto, Angrisani, Leopoldo, Series Editor, Arteaga, Marco, Series Editor, Panigrahi, Bijaya Ketan, Series Editor, Chakraborty, Samarjit, Series Editor, Chen, Jiming, Series Editor, Chen, Shanben, Series Editor, Chen, Tan Kay, Series Editor, Dillmann, Rüdiger, Series Editor, Duan, Haibin, Series Editor, Ferrari, Gianluigi, Series Editor, Ferre, Manuel, Series Editor, Hirche, Sandra, Series Editor, Jabbari, Faryar, Series Editor, Jia, Limin, Series Editor, Kacprzyk, Janusz, Series Editor, Khamis, Alaa, Series Editor, Kroeger, Torsten, Series Editor, Li, Yong, Series Editor, Liang, Qilian, Series Editor, Martín, Ferran, Series Editor, Ming, Tan Cher, Series Editor, Minker, Wolfgang, Series Editor, Misra, Pradeep, Series Editor, Möller, Sebastian, Series Editor, Mukhopadhyay, Subhas, Series Editor, Ning, Cun-Zheng, Series Editor, Nishida, Toyoaki, Series Editor, Oneto, Luca, Series Editor, Pascucci, Federica, Series Editor, Qin, Yong, Series Editor, Seng, Gan Woon, Series Editor, Speidel, Joachim, Series Editor, Veiga, Germano, Series Editor, Wu, Haitao, Series Editor, Zamboni, Walter, Series Editor, Zhang, Junjie James, Series Editor, Cocorullo, Giuseppe, editor, Crupi, Felice, editor, and Limiti, Ernesto, editor

Published
2023
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9. On the Simultaneous Conjugate Match of N-Port Networks

Author

Colangeli, Sergio, Serino, Antonio, Ciccognani, Walter, Longhi, Patrick E., and Limiti, Ernesto

Abstract

Some advancements are proposed to the theory of simultaneous conjugate match (SCM) of $N$ -ports. It is shown that, if a network qualifies for geometrical unconditional stability (g-US), then it can be matched simultaneously at all ports. The proof serves as the basis for constructing an iterative algorithm (AlgG) which is guaranteed to converge to the SCM condition for all $N$ -ports exhibiting g-US. In addition to the main results above mentioned, two more iterative algorithms are presented (AlgS and AlsA), which are conjectured to work for all networks satisfying g-US. AlgS can be shown to converge globally for $N = 2$ and AlgA to converge locally for all $N$ . Besides their theoretical interest, these results find a natural application in the matching of passive networks, and in particular of $N$ -element phased arrays. However, they can be applied to any (i.e., also active) $N$ -port as long as this is known to exhibit g-US.

Published
2024
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13. 32 dBm IP1dB/46 dBm IIP3 GaN Phase-Amplitude Setting Circuit at Ku-Band

Author

Longhi, Patrick Ettore, Colangeli, Sergio, Ciccognani, Walter, Das, Anjeeshnu, Sharma, Swati, Sharma, Shikha Swaroop, and Limiti, Ernesto

Abstract

Design and characterization of a 6-bit Phase and Amplitude Setting circuit realized in Gallium Nitride MMIC technology operating in Ku-band are reported in this brief. An analysis of transistor periphery selection is provided in order to fulfil linearity parameters concurrently targeting other design constraints such as switch isolation and size. It is shown that a trade-off between the contrasting goals of switch power handling (expressed in terms of 1dB compression point) and switch isolation should be addressed. The proposed linear versus nonlinear performance analysis is uncommon in the open literature since high power analysis is seldom treated in multi-bit phase and amplitude control circuits and even more valuable considering the relatively higher targeted operating bandwidth than previously published material. A useful insight into some design trade-offs required when synthesizing this class of circuits at Ku-band or above are here provided. State-of-the-art +32 dBm Input power at 1 dB compression point and + 46 dBm Input referred Third Order Intercept Point at Ku-band (13 - 17 GHz) are verified outclassing other technologies such as Gallium Arsenide or Silicon Germanium by a factor of 10 - 20 dB. The MMIC is an initial demonstrator targeting highly integrated circuits such as Gallium Nitride core-chips.

Published
2024
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14. 32–36-GHz Single-Chip Front-End MMIC Featuring 35-dBm Output Power and 3.2-dB Noise Figure With 60- and 100-nm GaN/Si HEMTs

Author

Longhi, Patrick E., Pace, Lorenzo, Costanzo, Ferdinando, Ciccognani, Walter, Colangeli, Sergio, Giofre, Rocco, Leblanc, Remy, Suriani, Andrea, Vitobello, Fabio, and Limiti, Ernesto

Abstract

The design, realization, and test of a $Ka$ -band gallium nitride (GaN) monolithic microwave-integrated circuit (MMIC) single-chip front-end (SCFE) is presented. The MMIC, realized in OMMIC’s 100- and 60-nm gate length GaN on Silicon process, integrates high-power and low-noise amplification together with transmit or receive selection switches in a $4.7\times3.0$ mm chip area. The SCFE is conceived for active electronically scanned antenna applications operating from 32 to 36 GHz. In RX mode, a typical noise figure of 3.2 dB and gain better than 3B have been measured. In TX mode, the typical output power and the power-added efficiency (PAE) are 35 dBm and 16%, respectively. A drain bias point trade-off analysis is performed so the power amplifier’s transistors channel temperature remains below 160° while design charts are provided for the synthesis of the low-noise amplifier (LNA) block. Finally, 100- and 60-nm gate length transistors are combined on the MMIC to improve its performance in terms of receive noise figure and transmit gain and output power. To the best of the authors’ knowledge, this GaN SCFE features the highest operating frequency reported in the open literature regarding integrated GaN/Si solutions and compares well with GaN/SiC MMICs especially considering the CW test condition here reported while concurrently fulfilling the FET’s channel temperature requirement.

Published
2024
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28. Authors

Author

Angelov, Iltcho, primary, Avolio, Gustavo, additional, Barbé, Kurt, additional, Caddemi, Alina, additional, Ciccognani, Walter, additional, Colangeli, Sergio, additional, Crupi, Giovanni, additional, Cunha, Telmo R., additional, Dambrine, Gilles, additional, Lauwers, Lieve, additional, Limiti, Ernesto, additional, Nauwelaers, Bart, additional, Pedro, José C., additional, Raffo, Antonio, additional, Rautio, James C., additional, Resca, Davide, additional, Schreurs, Dominique M.M.-P., additional, Vadalà, Valeria, additional, Van Moer, Wendy, additional, Vannini, Giorgio, additional, and Yarlequé, Manuel, additional

Published
2014
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29. Source/Load-Pull Noise Measurements at Ka Band

Author

Colangeli, Sergio, primary, Ciccognani, Walter, additional, Longhi, Patrick Ettore, additional, Pace, Lorenzo, additional, Serino, Antonio, additional, Poulain, Julien, additional, Leblanc, Rémy, additional, and Limiti, Ernesto, additional

Published
2021
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31. Non-Destructive, Self-Contained Extraction Method of Parasitic Resistance in HEMT Devices

Author

Colangeli, Sergio, Ciccognani, Walter, Serino, Antonio, Longhi, Patrick E., Pace, Lorenzo, Poulain, Julien, Leblanc, Rémy, and Limiti, Ernesto

Subjects
Hardware_INTEGRATEDCIRCUITS, Hardware_PERFORMANCEANDRELIABILITY, Hardware_LOGICDESIGN
Abstract

The paper studies the classical problem of determining the extrinsic resistances (RG, RS and RD) of field-effect transistors (FETs), and in particular of high-electron mobility transistors (HEMTs). In articular, this study relies on small-signal measurements of open-channel transistors.

Published
2020
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40. GaN/Si Ka-band SPDT for observation payloads

Author

Polli, Giorgio, primary, Longhi, Patrick E., additional, Colangeli, Sergio, additional, Fenu, Silvio, additional, Costanzo, Ferdinando, additional, Ciccognani, Walter, additional, and Limiti, Ernesto, additional

Published
2019
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48. EM Isolation Enhancement Based on Metamaterial Concept in Antenna Array System to Support Full-Duplex Application

Author

Alibakhshikenari, Mohammad, Vittori, Marco, Colangeli, Sergio, Virdee, Bal Singh, Andújar, Aurora, and Limiti, Ernesto

Subjects
dewey620
Abstract

This paper proposes EM mechanism to improve the isolation between transmitting and receiving array antennas using metamaterial EM band gap (MTM-EBG). The proposed mechanism can be applied to full-duplex array antenna system with very closely spaced arrays (0.33λo) with no degradation in radiation pattern. Using the proposed technique the isolation is shown to improve by >30 dB in an antenna array consisting of three-element microstrip patches designed to operate across 9.7 to 12.3 GHz. Parametric analysis was used to optimise the decoupling arrays performances. The proposed antenna array has physical dimensions of 65×22.5×1.6 mm3 and an electrical size of 2.16λo×0.75λo×0.053λo, where λo is free space-wavelength at mid-band of 10 GHz.

Published
2017

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