Search

In this study, a p-Si/ALD-Al2O3/Ti/Pt MOS (metal oxide semiconductor) device has been fabricated and used as a hydrogen sensor. The use of such a stack enables a reliable, industry-compatible CMOS fabrication process. ALD-Al2O3 has been chosen as it can be integrated into the back end of the line (BEOL) or in CMOS, post processing. The device response and recovery are demonstrated with good correlation between the capacitance variation and the hydrogen concentration. Detection down to 20 ppm at 140 °C was obtained and a response time of 56 s for 500 ppm was recorded. [ABSTRACT FROM AUTHOR]

In this study, a p-Si/ALD-Al2O3/Ti/Pt MOS (metal oxide semiconductor) device has been fabricated and used as a hydrogen sensor. The use of such a stack enables a reliable, industry-compatible CMOS fabrication process. ALD-Al2O3 has been chosen as it can be integrated into the back end of the line (BEOL) or in CMOS, post processing. The device response and recovery are demonstrated with good correlation between the capacitance variation and the hydrogen concentration. Detection down to 20 ppm at 140 °C was obtained and a response time of 56 s for 500 ppm was recorded.

The lack of efficient, cost-effective, room-temperature, and silicon-based photodetectors operating at the telecom bands has posed a persistent challenge in the realm of silicon photonics. One potential solution lies in introducing an impurity band within the silicon bandgap, offering a pathway to create a silicon-based photodetector that not only meets the requirements but also benefits from seamless integration with mature CMOS technology. Here, we report on enhancing device performance by introducing geometric modifications while retaining the doping concentration, device area, and operating conditions. The modified devices showcase improved responsivities, reaching approximately 3 × 10−2 A/W at 1300 nm (O band) and 1 × 10−2 A/W at 1500 nm (C band). These values significantly surpass prior work on Si:Te planar photodetectors, demonstrating an improvement of over 30 times. The noise equivalent power however was found to unavoidably increase by one order of magnitude to 10−6 (W / H z ). [ABSTRACT FROM AUTHOR]

Microneedles are getting more and more attention in research and commercialization since their advancement in the 1990s due to the advantages over traditional hypodermic needles such as minimum invasiveness, low material and fabrication cost, and precise needle geometry control, etc. The design and fabrication of microneedles depend on various factors such as the type of materials used, fabrication planes and techniques, needle structures, etc. In the past years, in-plane and out-of-plane microneedle technologies made by silicon (Si), polymer, metal, and other materials have been developed for numerous biomedical applications including drug delivery, sample collections, medical diagnostics, and bio-sensing. Among these microneedle technologies, in-plane Si microneedles excel by the inherent properties of Si such as mechanical strength, wear resistance, biocompatibility, and structural advantages of in-plane configuration such as a wide range of length, readiness of integration with other supporting components, and complementary metal-oxide-semiconductor (CMOS) compatible fabrication. This article aims to provide a review of in-plane Si microneedles with a focus on fabrication techniques, theoretical and numerical analysis, experimental characterization of structural and fluidic behaviors, major applications, potential challenges, and future prospects. [ABSTRACT FROM AUTHOR]

Zinc oxide (ZnO) is a low‐cost class of n‐type inorganic semiconductors with a large exciton binding energy (≈60 meV), wide direct bandgap (3.37 eV), and the most important material for various fields of industrial and deep‐tech applications. Herein, a complementary metal–oxide–semiconductor (CMOS) temperature compatible (400 °C)‐ integrated circuit (IC) process based on the sol–gel method is described. The properties of aluminum (Al)‐doped ZnO (AZO) thin films were investigated. The Al content, Al/(Al+Zn) ratio, varies from 0 to 10% and exhibits compressive stresses from −4 to −1.8 GPa. At low dopant concentrations, the Al content acts as an electrical dopant, while at higher dopant concentrations, it acts as an impurity. The electrical resistivity, which was only 3 × 10−3 Ω cm, is inversely related to the orientation of the thin film, which was preferably along the (0 0 2) direction. The optical bandgap energy of AZO thin films was determined to be in the range of 3.34–3.87 eV. Herein, a novel method to change the Al content of doped AZO thin films to improve their properties is described, which is suitable for next‐generation flexible, microsystem, and optoelectronic devices. [ABSTRACT FROM AUTHOR]

With the miniaturization of microelectronics, integrated circuits can benefit from an on‐chip solid‐state power supply. Microsupercapacitors (MSCs), owing to their long lifetimes and complementary metal‐oxide‐semiconductor (CMOS) compatible fabrication, can be a potential on‐chip energy storage unit. MSCs fabricated through spin coating graphene‐oxide (GrO) often suffer from insufficient electrode thicknesses that lead to low energy densities. It, therefore, requires functionalizations for GrO that can improve the MSC electrode thickness and, thereby, the performance of the MSC. Thus, herein, the MSCs fabricated of alkyl‐amino functionalized reduced‐graphene‐oxide–heptadecan‐9‐amine (rGO) are reported for enhanced electrode thickness, high capacitance, and lower series resistance compared with functionalized GrO‐based MSCs (GO‐MSCs). The functionalized rGO solves a significant issue of inadequate electrode thickness in wafer‐scale MSC fabrication while achieving higher energy densities in fewer spin coatings. The rGO‐MSC displays an areal capacitance of 108 μF cm−2 compared with 24 μF cm−2 for the GO‐MSC while also demonstrating more than twice its power density in an integration compatible ionic liquid electrolyte 1‐ethyl‐3‐methylimidazolium bis(trifluoromethylsulfony)imide (EMIM‐TFSI). [ABSTRACT FROM AUTHOR]

Silicon-based infrared photodetector is proposed using an organic nano-dot array covered with an Au thin film. The nano-dots were self-assembled structures composed of crystalline CuPc and PTCDA organic semiconductors, and they enhanced the absorption of the incident infrared light. The annealing process at the CuPc and PTCDA deposition formed these semiconductor materials to be a nano-dot array shape. The Au-coated nano-dots presented broadband reflectance decrease in the near- to mid-infrared region. The Arrhenius plot investigation revealed that the proposed photodetector had 0.4-0.43 eV activation energy, a sub-Si-bandgap energy barrier. The photodetection experiments in the near-infrared region presented the proposed photodetector discriminated on and off of 2.07- $\mu \text{m}$ -long super continuum light. In addition, band-pass filtered emission from a black body cavity with a wavelength of $3.05~\mu \text{m}$ could be measured. Since the derivation of the activation energy and the cut-off wavelength showed a good agreement, the organic semiconductor generated a carrier at the photodetection. A possible detection mechanism was thus attributed to carrier excitations at an interface between organic semiconductors, CuPc and PTCDA. The proposed structure contributes to fabricate mid-infrared silicon-based photodetectors with high light absorption performance. [ABSTRACT FROM AUTHOR]

A novel electron beam detector made on Si wafers by the advanced CMOS FinFET processes has been proposed in this study. Through electron beam (e-Beam) charging of on-wafer sensing pads, electron dosage can be registered on the detector for follow-up read-out. Without external power or battery connections, this detector has successfully delivered on-chip dosage, intensity, and energy after e-Beam exposure. [ABSTRACT FROM AUTHOR]

Si‐based photodetectors satisfy the criteria of being low‐cost and environmentally friendly, and can enable the development of on‐chip complementary metal‐oxide‐semiconductor (CMOS)‐compatible photonic systems. However, extending their room‐temperature photoresponse into the mid‐wavelength infrared (MWIR) regime remains challenging due to the intrinsic bandgap of Si. Here, we report on a comprehensive study of a room‐temperature MWIR photodetector based on Si hyperdoped with Te. The demonstrated MWIR p‐n photodiode exhibits a spectral photoresponse up to 5 µm and a slightly lower detector performance than the commercial devices in the wavelength range of 1.0–1.9 µm. The correlation between the background noise and the sensitivity of the Te‐hyperdoped Si photodiode, where the maximum room‐temperature specific detectivity is found to be 3.2 × 1012 cmHz1/2 W−1 and 9.2 × 108 cmHz1/2 W−1 at 1 µm and 1.55 µm, respectively, is also investigated. This work contributes to pave the way towards establishing a Si‐based broadband infrared photonic system operating at room temperature. [ABSTRACT FROM AUTHOR]

We analyze the theoretical and physical properties of a CMOS compatible optical leaky wave antenna (OLWA) integrated into a Fabry-Pérot resonator (FPR) at 193.4 THz (wavelength ?0 = 1550 nm). The presented OLWA design is composed of a silicon (Si) dielectric waveguide sandwiched between two silica glass (SiO2) domains, and it comprises periodic perturbations (cavities of vacuum). We first describe the radiation of the isolated OLWA whose radiation pattern is due to the excitation of a leaky wave, slowly decaying while traveling. The perturbations are indeed designed to obtain a leaky wave harmonic with very low attenuation and phase constants. Then, we integrate the same OLWA into a FPR where two leaky waves with the same wavenumber are travelling in opposite directions inside the resonator. We show that the radiation level at the broadside direction can be effectively controlled by modifying the optical properties of the Si waveguide through electron-hole excess carrier generation (found to be highly enhanced when it is integrated into a FPR). The design of the integrated OLWA is properly set to guarantee the constructive interference of the two radiated beams provided by the two leaky waves in the FPR. The modal propagation constant in the integrated OLWA can be then altered through excess carrier generation in Si, thus the antenna can be tuned in and out of the resonance thanks to the high FPR quality factor, and the LW modal dispersion relation. This allows for enhanced radiation level control at broadside, and preliminary results show up to 13 dB beam modulation. © 2012 SPIE.

We analyze the theoretical and physical properties of a CMOS compatible optical leaky wave antenna (OLWA) integrated into a Fabry-Pérot resonator (FPR) at 193.4 THz (wavelength ?0 = 1550 nm). The presented OLWA design is composed of a silicon (Si) dielectric waveguide sandwiched between two silica glass (SiO2) domains, and it comprises periodic perturbations (cavities of vacuum). We first describe the radiation of the isolated OLWA whose radiation pattern is due to the excitation of a leaky wave, slowly decaying while traveling. The perturbations are indeed designed to obtain a leaky wave harmonic with very low attenuation and phase constants. Then, we integrate the same OLWA into a FPR where two leaky waves with the same wavenumber are travelling in opposite directions inside the resonator. We show that the radiation level at the broadside direction can be effectively controlled by modifying the optical properties of the Si waveguide through electron-hole excess carrier generation (found to be highly enhanced when it is integrated into a FPR). The design of the integrated OLWA is properly set to guarantee the constructive interference of the two radiated beams provided by the two leaky waves in the FPR. The modal propagation constant in the integrated OLWA can be then altered through excess carrier generation in Si, thus the antenna can be tuned in and out of the resonance thanks to the high FPR quality factor, and the LW modal dispersion relation. This allows for enhanced radiation level control at broadside, and preliminary results show up to 13 dB beam modulation. © 2012 SPIE.

An optical leaky wave antenna (OLWA) is a device that radiates a light wave into the surrounding space from a leaky wave (LW) guided mode or receives optical power from the surrounding space into a guided optical mode. In this work, we propose and provide a 3D analysis of a novel CMOS compatible OLWA made of a silicon nitride (Si3N4) waveguide comprising periodic silicon perturbations which allow electronic tuning capability. The analysis presented here includes the effect of the number of semiconductor perturbations, the antenna radiation pattern and directivity. We show that the number of the silicon perturbations has to be large to provide a long radiating section required to achieve radiation with high directivity. In other words, the proposed structure allows for a very narrow-beam radiation. Preliminary results are confirmed by exploiting leaky wave and antenna array factor theory, as well as verified by means of two full-wave simulators (HFSS and COMSOL). Our purpose is to ultimately use PIN junctions as building blocks for each silicon implantation for the electronic control of the radiation. In particular, the electronic tunability of the optical parameters of silicon (such as refractive index and absorption coefficient) via current injection renders itself the ideal platform for optical antennas that can facilitate electronic beam control, and boost the efficiency of optoelectronic devices such as light-emitting diodes, lasers and solar cells, and bio-chemical sensors. © 2011 Copyright Society of Photo-Optical Instrumentation Engineers (SPIE).

An optical leaky wave antenna (OLWA) is a device that radiates a light wave into the surrounding space from a leaky wave (LW) guided mode or receives optical power from the surrounding space into a guided optical mode. In this work, we propose and provide a 3D analysis of a novel CMOS compatible OLWA made of a silicon nitride (Si3N4) waveguide comprising periodic silicon perturbations which allow electronic tuning capability. The analysis presented here includes the effect of the number of semiconductor perturbations, the antenna radiation pattern and directivity. We show that the number of the silicon perturbations has to be large to provide a long radiating section required to achieve radiation with high directivity. In other words, the proposed structure allows for a very narrow-beam radiation. Preliminary results are confirmed by exploiting leaky wave and antenna array factor theory, as well as verified by means of two full-wave simulators (HFSS and COMSOL). Our purpose is to ultimately use PIN junctions as building blocks for each silicon implantation for the electronic control of the radiation. In particular, the electronic tunability of the optical parameters of silicon (such as refractive index and absorption coefficient) via current injection renders itself the ideal platform for optical antennas that can facilitate electronic beam control, and boost the efficiency of optoelectronic devices such as light-emitting diodes, lasers and solar cells, and bio-chemical sensors. © 2011 Copyright Society of Photo-Optical Instrumentation Engineers (SPIE).

The monitoring of dissolved oxygen is a key parameter in many fields, namely the treatment and monitoring of various cerebral traumas. Leveraging existing manufacturing techniques, electrochemical sensors hold the potential for compact, simple, and scalable dissolved oxygen sensors. Past studies have focused on the general design of such sensors, but a comparative study on the impact of microelectrode geometries for cerebral applications has been forthcoming. We present here the results of a characterization study conducted across solid-state sensors with varying microelectrode geometries. The electrode structures were covered with a Nafion membrane and included variations of the classic interdigitated microelectrode array in addition to a circular microelectrode array variation. Voltage sweeps were conducted while monitoring the devices’ sensing current responses across a 50.3 mmHg change in dissolved oxygen within a deionized aqueous solution. Half of the devices were identified as ultramicroelectrode designs that presented a greater dependence on electrode spacing and topology. The ultramicroelectrode-style (UME) interdigitated electrode (IDE) topology presented the greatest signal response at 25.24 nA/mmHg, an approximate eight-fold improvement in sensitivity from a non-UME variation with a sensitivity of 2.98 nA/mmHg. The design presented a linear response from 8.3 mmHg to 58.6 mmHg with r2 = 0.9743. The sensitivity improvement was attributed to the ultramicroelectrode structure’s amplifying diffusive feedback, which was enabled by the IDE topology and short electrode spacings.

Recently, many researches are reported on using germanium in silicon-based lasers but acquiring this potential for a plasmonic nanolaser may also be important for development of silicon-compatible plasmon sources. In this paper, a custom-shaped nanocavity plasmon source based on highly doped tensile-strained germanium/silicon-germanium multiple quantum well gain medium is introduced and theoretically investigated. We have used a semi-classical macroscopic rate equation model for calculation of the output performance characteristics. Also, modal analysis has been done based on FDTD method. The proposed nanolaser has a tiny footprint of 0.1225 μm2, possible room temperature performance, and fabrication process based on a silicon substrate. The output performance of the nanolaser structure as estimated is noticeable and the calculated results, using some previously reported experimental data and redundant software double checking, show acceptable compatibility. In 1550-nm output wavelength, it provides 15.6 mW output power in the 21-mA threshold current and 600 μW in 1-mA pump current, while maintaining its performance in a wide spectral bandwidth about 2 THz. It also can be electrically modulated by the pump current up to 3 GHz. This remarkable performance is achieved, thanks to the high Purcell factor of the parabolically notched nanocavity of about 700 and its high quality factor of about 58. [ABSTRACT FROM AUTHOR]

Silicon nanowire (SiNW) biosensors have received a special attention from the research community due to its ability to detect a range of species. The nano feature size of the SiNW has been exploited to fabricate small, low-cost, robust, portable, real-time read-out biosensors. These sensors are manufactured by two methods – top-down or bottom-up. Instead of the bottom-up method, the top-down approach is widely used due to its compatibility with complementary metal-oxide semiconductor (CMOS) process and scope of mass production. However, in the top-down method, the post fabrication microfluidic channel integration to access the SiNW test site remains complex and challenging. Since the nanosensor is expected to operate in a bio environment, it is essential to passivate the metal electrodes while pathways have to be made to access the test site. In this paper, we present a relatively easier method to access the SiNW test site without employing complex microfluidic channels while achieving leakage free passivation of metal electrodes and preserving the integrity of the nanosensor. This is accomplished in the last step of the manufacturing process by employing a lithography mask and reactive ion etching (RIE). HfO 2 integrated crystalline silicon nanosensors are manufactured using novel top-down front end of line (FEOL) sidewall transfer lithography (STL) process. HfO 2 acts as an etch stop layer while performing RIE in the last step to access the sensor test site. The 100 mm wafer scale results of 20 nm × 60 nm × 6 μm (H x W x L) p-type nanosensors shows an average I on /I off ≥ 105 with maximum turn-on voltage of −4 V and uniform subthreshold slope of 70 mV/dec. In comparison with sensors encapsulated with SiO 2 , the HfO 2 integrated nanosensors were found to improve the threshold voltage variation by 50%. Based on this work, the HfO 2 integrated SiNW demonstrates good stability for biosensing application. • Access to SiNW site without complex microfluidics using lithography and dry etching. • 100 mm wafer scale integration of HfO2 with SiNW in CMOS compatible scheme. • Study of selectivity of HfO2 towards CHF3/CF4/O2 plasma and HF wet etch processes. • Easing the access to SiNW test site utilizing the robust etch stop nature of HfO2. • Study of VTH, SS and ION/IOFF of SiNW before and after opening access to test site. • Comparative study on the electrical stability between SiO2 encapsulated versus SiO2/HfO2 embedded SiNW sensors. [ABSTRACT FROM AUTHOR]

Graphical abstract Highlights • A simple sensor structure with self-heating effect of diode is proposed. • The sensor size is reduced by removing dedicated heating structure and optimizing the fabrication process. • High performance is obtained by employing series diodes. • The proposed sensor has high sensitivity and low power consumption. Abstract Diode based micro-Pirani vacuum sensors attract considerable attention because they do not require special materials and are compatible with complementary metal oxide semiconductors (CMOS). However, their complex heating structure makes it difficult to reduce the sensor size. This paper reports a novel compact micro-Pirani vacuum sensor based on series diodes. The self-heating effect of the series diodes helps simplify the structural design by avoiding a dedicated heating structure. Moreover, the small size of the series diodes ensures high temperature coefficient. The proposed design reduces the sensor size without sacrificing the performance. In fact, simulation results indicate that the series diodes help enhance the device performance. A sensor was fabricated by a CMOS compatible process. The sensor size was reduced significantly to 35 μm × 35 μm. The sensor is sensitive to the vacuum pressure range from 10−1 Pa to 104 Pa when driven by a constant current as small as 10 μA, and the power consumption is low at 50 μW. [ABSTRACT FROM AUTHOR]

In this paper, we report an on-chip gas sensor based on novel zinc oxide (ZnO) nanocombs for carbon monoxide (CO) sensing. With ZnO gas sensing nanocombs fully integrated on a single silicon chip, the concept of low cost complementary-metal-oxide-semiconductor (CMOS) microsensor capable of on-chip gas sensing and processing is enabled. Compared with all previous implementations, the proposed ZnO nanocombs feature much larger effective sensing area and exhibit ultra-high sensitivity even at the room temperature. Specifically, at room temperature, we demonstrate peak sensitivities as high as 7.22 and 8.93 for CO concentrations of 250 ppm and 500 ppm, respectively. As a result, by operating the proposed ZnO-nanocomb-based gas sensor at the room temperature, the widely adopted power consuming heating components are completely removed. This leads to not only great power saving, but also full compatibility between the gas sensor and the on-chip circuitry in term of acceptable operating temperature. In addition, the reported fast response/recovery time of ~200 s/~50 s (250 ppm CO) makes it well suited to real-life applications.

This paper presents a readout circuit for a carbon dioxide (CO2) sensor that measures the CO2-dependent thermal time constant of a hot-wire transducer. The readout circuit periodically heats up the transducer and uses a phase-domain $\Delta \Sigma $ modulator to digitize the phase shift of the resulting temperature transients. A single resistive transducer is used both as a heater and as a temperature sensor, thus greatly simplifying its fabrication. To extract the transducer’s resistance, and hence its temperature, in the presence of large heating currents, a pair of transducers is configured as a differentially driven bridge. The transducers and the readout circuit have been implemented in a standard 0.16- $\mu \text{m}$ CMOS technology, with an active area of 0.3 and 3.14 mm2, respectively. The sensor consumes 6.8 mW from a 1.8-V supply, of which 6.3 mW is dissipated in the transducers. A resolution of 94-ppm CO2 is achieved in a 1.8-s measurement time, which corresponds to an energy consumption of 12 mJ per measurement, >10 $\times $ less than prior CO2 sensors in CMOS technology. [ABSTRACT FROM AUTHOR]

Two different approaches for contacting graphene in a 200 mm wafer silicon technology environment were tested. The key is the opportunity to create a thin SiN passivation layer on top of the graphene protecting it from the damage by plasma processes. The first approach uses pure Ni contacts with a thickness of 200 nm. For the second attempt, Ni is used as the contact metal which substitutes the Ti compared to a standard contact hole filling process. Accordingly, the contact hole filling of this “stacked via” approach is Ni/TiN/W. We demonstrate that the second “stacked Via” is beneficial and shows contact resistances of a wafer scale process with values below 200 Ohm µm. [ABSTRACT FROM AUTHOR]

A method to synthesize high-density, vertically-aligned, multi-wall carbon nanotubes (MWCNTs) on an insulating substrate at low temperature using a complementary metal–oxide–semiconductor (CMOS) compatible process is presented. Two factors are identified to be important in the carbon nanotube (CNT) growth, which are the catalyst design and the substrate material. By using a Ni–Al–Ni multilayer catalyst film and a ZrO2 substrate, vertically-aligned CNTs can be synthesized at 340 °C using plasma-enhanced chemical vapor deposition (PECVD). Both the quality and density of the CNTs can be enhanced by increasing the synthesis temperature. The function of the aluminum interlayer in reducing the activation energy of the CNT formation is studied. The nanoparticle sintering and quick accumulation of amorphous carbon covering the catalyst can prematurely stop CNT synthesis. Both effects can be suppressed by using a substrate with a high surface energy such as ZrO2.

A Pirani vacuum sensor based on mutual heating between a heater and a distinct temperature probe, separated by a 5 μm air gap, is proposed. The sensor is fabricated by applying a simple post-processing procedure to chips designed and fabricated using the BCD6s process (Bipolar-CMOS-DMOS) of STMicroelectronics. The sensor layout has been optimized to exploit the layers of the original process in order to enhance the sensor performance. The sensors exhibit a resolution better than 0.4 Pa from nearly 0.3 Pa to 1 kPa and better than 50 Pa from 1 kPa to 100 kPa. The sensor response at the lower extreme of the pressure interval is marked by an offset voltage, which is three orders of magnitude smaller than the full-scale value. Finite Element Method simulations suggest that the offset is due to pressure-independent heat transfer due to radiation and conduction through the substrate. The simulated equivalent offset drift is 50 MPa/K. [ABSTRACT FROM AUTHOR]