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In a radiative Auger process, an excited electron relaxes by concomitant emission of a redshifted photon and energy transfer to another electron. Measuring radiative Auger processes in a quantum dot with single-photon resolution enables determination of the energy of single-electron levels as well as their lifetimes.In a multi-electron atom, an excited electron can decay by emitting a photon. Typically, the leftover electrons are in their ground state. In a radiative Auger process, the leftover electrons are in an excited state and a redshifted photon is created(1-4). In a semiconductor quantum dot, radiative Auger is predicted for charged excitons(5). Here we report the observation of radiative Auger on trions in single quantum dots. For a trion, a photon is created on electron-hole recombination, leaving behind a single electron. The radiative Auger process promotes this additional (Auger) electron to a higher shell of the quantum dot. We show that the radiative Auger effect is a powerful probe of this single electron: the energy separations between the resonance fluorescence and the radiative Auger emission directly measure the single-particle splittings of the electronic states in the quantum dot with high precision. In semiconductors, these single-particle splittings are otherwise hard to access by optical means as particles are excited typically in pairs, as excitons. After the radiative Auger emission, the Auger carrier relaxes back to the lowest shell. Going beyond the original theoretical proposals, we show how applying quantum optics techniques to the radiative Auger photons gives access to the single-electron dynamics, notably relaxation and tunnelling. This is also hard to access by optical means: even for quasi-resonantp-shell excitation, electron relaxation takes place in the presence of a hole, complicating the relaxation dynamics. The radiative Auger effect can be exploited in other semiconductor nanostructures and quantum emitters in the solid state to determine the energy levels and the dynamics of a single carrier.

Photonic quantum technology provides a viable route to quantum communication

Restoration of the p53 tumor suppressor for personalised cancer therapy is a promising strategy. However, high-affinity MDM2 inhibitors have shown substantial side effects in clinical trials. Thus, elucidation of the molecular mechanisms of action of p53 reactivating molecules with alternative functional principle is of the utmost importance.Here, we report a discovery of a novel allosteric mechanism of p53 reactivation through targeting the p53 N-terminus which blocks both p53/MDM2 and p53/MDM4 interactions. Using biochemical assays and molecular docking, we identified the binding site of two p53 reactivating molecules, RITA and protoporphyrin IX (PpIX). Ion-mobility mass spectrometry revealed that the binding of RITA to serine 33 and serine 37 is responsible for inducing the allosteric shift in p53, which shields the MDM2 binding residues of p53 and prevents its interactions with MDM2 and MDM4. Our results point to an alternative mechanism of blocking p53 interaction with MDM2 and MDM4 and may pave the way for the development of novel allosteric inhibitors of p53/MDM2 and p53/MDM4 interactions.Contribution to the fieldGiven the immense importance of the p53 tumor suppressor for cancer, efforts have been made to identify p53 activators, which sterically inhibit MDM2. Because high-affinity MDM2 inhibitors are facing problems with considerable side effects, other approaches are needed to reactivate p53 for improved cancer therapy. The allosteric mechanism of action of p53 activator RITA, which we discovered, and its dependence on the oncogenic switch, is an unexpected turn in the p53 story. Our findings provide a basis for the development of p53 activators with a similar mode of functioning, either through the classical drug discovery route or through the drug repurposing approach. Allosteric modulators might have great potential as single agents, or in combination with the standard of care. Further, p53 modulators could serve as invaluable tools to better understand its biology.

Initial age-related degradation mechanisms for InAs quantum dot lasers grown on silicon substrates emitting at 1.3 μ m are investigated. The rate of degradation is observed to increase for devices operated at higher carrier densities and is therefore dependent on gain requirement or cavity length. While carrier localization in quantum dots minimizes degradation, an increase in the number of defects in the early stages of aging can increase the internal optical-loss that can initiate rapid degradation of laser performance due to the rise in threshold carrier density. Population of the two-dimensional states is considered the major factor for determining the rate of degradation, which can be significant for lasers requiring high threshold carrier densities. This is demonstrated by operating lasers of different cavity lengths with a constant current and measuring the change in threshold current at regular intervals. A segmented-contact device, which can be used to measure the modal absorption and also operate as a laser, is used to determine how the internal optical-loss changes in the early stages of degradation. Structures grown on silicon show an increase in internal optical loss, whereas the same structure grown on GaAs shows no signs of increase in internal optical loss when operated under the same conditions.

We report radiative Auger emission from singly-charged semiconductor quantum dots. The red-shifted satellite peaks show a single-photon nature and allow to determine single-particle splittings. Photon statistics of the emission are used to investigate singleelectron dynamics.

In a radiative Auger process, optical decay is accompanied by simultaneous excitation of other carriers. The radiative Auger process gives rise to weak red-shifted satellite peaks in the optical emission spectrum. These satellite peaks have been observed over a large spectral range: in the X-ray emission of atoms; close to visible frequencies on donors in semiconductors and quantum emitters; and at infrared frequencies as shake-up lines in two-dimensional systems. So far, all the work on the radiative Auger process has focussed on detecting the spontaneous emission. However, the fact that the radiative Auger process leads to photon emission suggests that the transition can also be optically excited. In such an inverted radiative Auger process, excitation would correspond to simultaneous photon absorption and electronic de-excitation. Here, we demonstrate optical driving of the radiative Auger transition on a trion in a semiconductor quantum dot. The radiative Auger and the fundamental transition together form a $\Lambda$-system. On driving both transitions of this $\Lambda$-system simultaneously, we observe a reduction of the fluorescence signal by up to $70\%$. Our results demonstrate a type of optically addressable transition connecting few-body Coulomb interactions to quantum optics. The results open up the possibility of carrying out THz spectroscopy on single quantum emitters with all the benefits of optics: coherent laser sources, efficient and fast single-photon detectors. In analogy to optical control of an electron spin, the $\Lambda$-system between the radiative Auger and the fundamental transitions allows optical control of the emitters' orbital degree of freedom., Comment: 8 pages, 6 figures

Photonic quantum technology provides a viable route to quantum communication, quantum simulation, and quantum information processing. Recent progress has seen the realisation of boson sampling using 20 single-photons and quantum key distribution over hundreds of kilometres. Scaling the complexity requires architectures containing multiple photon-sources, photon-counters, and a large number of indistinguishable single photons. Semiconductor quantum dots are bright and fast sources of coherent single-photons. For applications, a significant roadblock is the poor quantum coherence upon interfering single photons created by independent quantum dots. Here, we demonstrate two-photon interference with near-unity visibility ($93.0\pm0.8$)\% using photons from two completely separate GaAs quantum dots. The experiment retains all the emission into the zero-phonon-line -- only the weak phonon-sideband is rejected -- and temporal post-selection is not employed. Exploiting the quantum interference, we demonstrate a photonic controlled-not circuit and an entanglement with fidelity ($85.0\pm 1.0$)\% between photons of different origins. The two-photon interference visibility is high enough that the entanglement fidelity is well above the classical threshold. The high mutual-coherence of the photons stems from high-quality materials, a diode-structure, and the relatively large quantum dot size. Our results establish a platform, GaAs QDs, for creating coherent single photons in a scalable way., Comment: 20 pages, 9 figures, supplementary information included in a separate PDF

Our GaAs quantum dots device exhibits ultra-low noise as evidenced by optical linewidths close-to the ideal limit, an elimination of blinking, charge locked by Coulomb blockade, high-fidelity spin initialization, and a long electron-spin lifetime.

Lowering the threshold gain of InAs quantum dot lasers grown on Silicon, significantly extends device lifetime. Measurements on degraded devices show increased optical mode loss is responsible for degradation and a consequent shortening of lasing wavelength.

InAs quantum-dot (QD) lasers emitting at 1300nm with nominally undoped and modulated p-type doping are studied. Modal-gain measurements indicate a higher gain can be achieved from the ground-state for a given Fermi-level separation with p-doping and a reduced temperature-dependence of threshold current for short-cavity lasers.