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Your search keyword '"Cirlin, George E."' showing total 124 results
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124 results on '"Cirlin, George E."'

2. Modified silicone rubbers for fabrication and contacting of flexible suspended membranes of n-/p-GaP nanowires with single-walled carbon nanotube transparent contact

Author

Neplokh, Vladimir, Kochetkov, Fedor M., Deriabin, Konstantin V., Fedorov, Vladimir V., Bolshakov, Alexey D., Eliseev, Igor E., Mikhailovskii, Vladimir Yu., Ilatovskii, Daniil A., Krasnikov, Dmitry V., Tchernycheva, Maria, Cirlin, George E., Nasibulin, Albert G., Mukhin, Ivan S., and Islamova, Regina M.

Subjects
Physics - Applied Physics, Condensed Matter - Materials Science, Physics - Chemical Physics
Abstract

This work proposes new chemical and mechanical materials and techniques for III-V semiconductor NW/silicone membrane formation and optoelectronic device fabrication. Molecular beam epitaxy (MBE)-synthesized n-, p- and i-GaP NWs were encapsulated by introduced G-coating method into synthesized polydimethylsiloxane-graft-polystyrene and released from the Si growth substrate. The fabricated membranes were contacted with different materials including single-walled carbon nanotubes or ferrocenyl-containing polymethylhydrosiloxane with and without multi-walled carbon nanotubes doping. The electrical connection of the fabricated membranes was verified by electron beam induced current (EBIC) spectroscopy. The developed methods and materials can be applied for fabrication of high quality flexible inorganic optoelectronic devices., Comment: 25 pages, 17 figures, 1 table

Published
2019

3. Growth of Three-Dimensional InGaN Nanostructures by Plasma-Assisted Molecular Beam Epitaxy.

Author

Gridchin, Vladislav O., Kotlyar, Konstantin P., Ubyivovk, Evgeniy V., Lendyashova, Vera V., Dragunova, Anna S., Kryzhanovskaya, Natalia V., Shevchuk, Dmitrii S., Reznik, Rodion R., Kukushkin, Sergey A., and Cirlin, George E.

Abstract

A study on the formation of InGaN ternary compounds in the three-dimensional growth mode is presented. For the first time, we demonstrate that the self-organization during InGaN growth is responsible for the formation of core–shell nanowires (NWs), nanotubes, zinc blende (ZB) phases, and nanoflowers. It is found that the core–shell InGaN NWs are formed at the very initial stage of growth. An increase in growth time results in the ascending indium diffusion from the cores of NWs and their accumulation at the NW tips, enabling three-dimensional lateral growth and formation of nanotubes. Further nanostructure growth leads to the formation of nanoflowers with empty stems and ZB/wurtzite (WZ) phase interface at the periphery. The observed structural transformations of NWs are supported by transmission electron microscopy and photoluminescence measurements, as well as theoretical estimates. Understanding the formation mechanisms of these complex three-dimensional nanostructures can facilitate the development of InGaN compounds for gas-sensing applications. [ABSTRACT FROM AUTHOR]

Published
2024
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7. Photoluminescence Redistribution of InGaN Nanowires Induced by Plasmonic Silver Nanoparticles

Author

Shugabaev, Talgat, primary, Gridchin, Vladislav O., additional, Komarov, Sergey D., additional, Kirilenko, Demid A., additional, Kryzhanovskaya, Natalia V., additional, Kotlyar, Konstantin P., additional, Reznik, Rodion R., additional, Girshova, Yelizaveta I., additional, Nikolaev, Valentin V., additional, Kaliteevski, Michael A., additional, and Cirlin, George E., additional

Published
2023
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8. Inorganic photovoltaics – Planar and nanostructured devices

Author

Ramanujam, Jeyakumar, Verma, Amit, González-Díaz, B., Guerrero-Lemus, R., del Cañizo, Carlos, García-Tabarés, Elisa, Rey-Stolle, Ignacio, Granek, Filip, Korte, Lars, Tucci, Mario, Rath, Jatin, Singh, Udai P., Todorov, Teodor, Gunawan, Oki, Rubio, S., Plaza, J.L., Diéguez, Ernesto, Hoffmann, Björn, Christiansen, Silke, and Cirlin, George E.

Published
2016
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9. Direct Band Gap AlGaAs Wurtzite Nanowires

Author

Barettin, Daniele, primary, Shtrom, Igor V., additional, Reznik, Rodion R., additional, Mikushev, Sergey V., additional, Cirlin, George E., additional, Auf der Maur, Matthias, additional, and Akopian, Nika, additional

Published
2023
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10. Self-assembled photonic structure: a Ga optical antenna on GaP nanowires

Author

Kuznetsov, Alexey, primary, Roy, Prithu, additional, Grudinin, Dmitry V., additional, Kondratev, Valeriy M., additional, Kadinskaya, Svetlana A., additional, Vorobyev, Alexandr A., additional, Kotlyar, Konstantin P., additional, Ubyivovk, Evgeniy V., additional, Fedorov, Vladimir V., additional, Cirlin, George E., additional, Mukhin, Ivan S., additional, Arsenin, Aleksey V., additional, Volkov, Valentyn S., additional, and Bolshakov, Alexey D., additional

Published
2023
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18. Effect of crystal structure on the Young’s modulus of GaP nanowires

Author

Alekseev, Prokhor A, primary, Borodin, Bogdan R, additional, Geydt, Pavel, additional, Khayrudinov, Vladislav, additional, Bespalova, Kristina, additional, Kirilenko, Demid A, additional, Reznik, Rodion R, additional, Nashchekin, Alexey V, additional, Haggrén, Tuomas, additional, Lähderanta, Erkki, additional, Cirlin, George E, additional, Lipsanen, Harri, additional, and Dunaevskiy, Mikhail S, additional

Published
2021
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19. Purcell effect and beaming of emission in hybrid algaas nanowires with gaas quantum dots

Author

Reznik, Rodion R., Cirlin, George E., Kotlyar, Konstantin P., Ilkiv, Igor V., Akopian, Nika, Leandro, Lorenzo, Nikolaev, Valentin V., Belonovski, Alexey V., Kaliteevski, Mikhail A., Reznik, Rodion R., Cirlin, George E., Kotlyar, Konstantin P., Ilkiv, Igor V., Akopian, Nika, Leandro, Lorenzo, Nikolaev, Valentin V., Belonovski, Alexey V., and Kaliteevski, Mikhail A.

Abstract

Control of directionality of emissions is an important task for the realization of novel nanophotonic devices based on nanowires. Most of the existing approaches providing high directionality of the light emitted from nanowires are based on the utilization of the tapered shape of nanowires, serving as nanoantenna coupling with the light waveguided in nanowire and the directional output beam. Here we report the beaming of the emitted light with wavelength near 800 nm by naturally formed core-shell AlGaAs NW with multiply GaAs quantum dots (QDs) diameter 30 nm and height 10 nm, while the diameter of NW 130 nm, what does not support efficient emission into waveguided modes, including the mode HE11 . Experimental measurements show that intensity of emission for directions in the vicinity of the axis of NW is about two orders of magnitude higher than for perpendicular directions. The developed theoretical approach allowed us to calculate the probability of spontaneous emission for various directions and into waveguided modes and showed that highly directional radiation can be provided by the intrinsic emission properties of cylindrical NW. Our results suggest that for the small diameter of NW, directional emissions are associated with an TM0 leaky mode (when electric field oriented in axial direction) and therefore manifests in an existence of axial electric dipole transitions in quantum dots.

Published
2021

20. Influence of TOPO and TOPO-CdSe/ZnS Quantum Dots on Luminescence Photodynamics of InP/InAsP/InPHeterostructure Nanowires

Author

Khrebtov, Artem I., primary, Danilov, Vladimir V., additional, Kulagina, Anastasia S., additional, Reznik, Rodion R., additional, Skurlov, Ivan D., additional, Litvin, Alexander P., additional, Safin, Farrukh M., additional, Gridchin, Vladislav O., additional, Shevchuk, Dmitriy S., additional, Shmakov, Stanislav V., additional, Yablonskiy, Artem N., additional, and Cirlin, George E., additional

Published
2021
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22. Structural and Optical Properties of Self-Catalyzed Axially Heterostructured GaPN/GaP Nanowires Embedded into a Flexible Silicone Membrane

Author

Koval, Olga Yu., primary, Fedorov, Vladimir V., additional, Bolshakov, Alexey D., additional, Fedina, Sergey V., additional, Kochetkov, Fedor M., additional, Neplokh, Vladimir, additional, Sapunov, Georgiy A., additional, Dvoretckaia, Liliia N., additional, Kirilenko, Demid A., additional, Shtrom, Igor V., additional, Islamova, Regina M., additional, Cirlin, George E., additional, Tchernycheva, Maria, additional, Serov, Alexey Yu., additional, and Mukhin, Ivan S., additional

Published
2020
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25. Modified silicone rubber for fabrication and contacting of flexible suspended membranes of n-/p-GaP nanowires with a single-walled carbon nanotube transparent contact

Author

Neplokh, Vladimir, primary, Kochetkov, Fedor M., additional, Deriabin, Konstantin V., additional, Fedorov, Vladimir V., additional, Bolshakov, Alexey D., additional, Eliseev, Igor E., additional, Mikhailovskii, Vladimir Yu., additional, Ilatovskii, Daniil A., additional, Krasnikov, Dmitry V., additional, Tchernycheva, Maria, additional, Cirlin, George E., additional, Nasibulin, Albert G., additional, Mukhin, Ivan S., additional, and Islamova, Regina M., additional

Published
2020
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26. Low‐Temperature Growth of Au‐Catalyzed InAs Nanowires: Experiment and Theory.

Author

Dubrovskii, Vladimir G., Reznik, Rodion R., Ilkiv, Igor V., Kotlyar, Konstantin P., Soshnikov, Ilya P., Ubyivovk, Evgenii. V., Mikushev, Sergey V., and Cirlin, George E.

Subjects
NANOWIRES, MOLECULAR beam epitaxy, SURFACE temperature, CRYSTAL structure, LEAD time (Supply chain management)
Abstract

Experimental data on the rapid (≈4.4 nm s−1) axial growth rate of narrow (≈9 nm in radius) InAs nanowires (NWs) obtained by Au‐catalyzed molecular beam epitaxy on Si substrates at a low surface temperature of 270 °C are presented. These NWs exhibit pure wurtzite crystal structure and an unusually high ratio of the average NW length over the effective thickness of deposited InAs of about 60 despite the presence of parasitic InAs islands on the Si substrate. These trends are explained within a dedicated growth model. In the absence of In evaporation, In atoms either diffuse from the substrate to the NW tips or remain in the parasitic layer. This leads to a linear time dependence of the NW length and other unusual growth properties that are thought to have not previously been accessed. [ABSTRACT FROM AUTHOR]

Published
2022
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27. Growth and Characterization of GaP/GaPAs Nanowire Heterostructures with Controllable Composition

Author

Bolshakov, Alexey D., primary, Fedorov, Vladimir V., additional, Sibirev, Nikolai V., additional, Fetisova, Marina V., additional, Moiseev, Eduard I., additional, Kryzhanovskaya, Natalia V., additional, Koval, Olga Yu., additional, Ubyivovk, Evgeniy V., additional, Mozharov, Alexey M., additional, Cirlin, George E., additional, and Mukhin, Ivan S., additional

Published
2019
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34. Influence of shadow effect on the growth and shape of InAs nanowires.

Author

Sibirev, Nickolay V., Tchernycheva, Maria, Timofeeva, Maria A., Harmand, Jean-Christophe, Cirlin, George E., and Dubrovskii, Vladimir G.

Subjects
NANOWIRES, NANOSTRUCTURED materials, MOLECULAR beam epitaxy, MOLECULAR beams, NANOELECTRONICS
Abstract

The influence of shadow effect originating from the neighboring nanowires on the nanowire growth is theoretically investigated. The nanowire axial and radial growth rates and the nanowire shape are shown to be strongly dependent on the nanowire surface density and the direction of incident flux. Theoretical predictions are compared with the experimental shapes of InAs nanowires grown by the Au-catalyzed molecular beam epitaxy. In particular, the barrel-like shape observed in dense arrays of InAs nanowires is well described by the model. Very importantly, we show that the shadow effect helps to avoid otherwise enabled radial growth and to preserve the cylindrical nanowire shape. [ABSTRACT FROM AUTHOR]

Published
2012
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35. Piezoelectric Current Generation in Wurtzite GaAs Nanowires

Author

Alekseev, Prokhor A., primary, Sharov, Vladislav A., additional, Geydt, Pavel, additional, Dunaevskiy, Mikhail S., additional, Lysak, Volodymyr V., additional, Cirlin, George E., additional, Reznik, Rodion R., additional, Khrebtov, Artem I., additional, Soshnikov, Ilya P., additional, and Lähderanta, Erkki, additional

Published
2017
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36. Au-assisted molecular beam epitaxy of InAs nanowires: Growth and theoretical analysis.

Author

Tchernycheva, Maria, Travers, Laurent, Patriarche, Gilles, Glas, Frank, Harmand, Jean-Christophe, Cirlin, George E., and Dubrovskii, Vladimir G.

Subjects
PHASE transitions, MOLECULAR beams, NANOWIRES, ELECTRON diffraction, ELECTROMETALLURGY of silver, INDIUM arsenide
Abstract

The Au-assisted molecular beam epitaxial growth of InAs nanowires is discussed. In situ reflection high-energy electron diffraction observations of phase transitions of the catalyst particles indicate that they can be liquid below the eutectic point of the Au-In alloy. The temperature range where the catalyst can be liquid covers the range where we observed nanowire formation (380–430 °C). The variation of nanowire growth rate with temperature is investigated. Pure axial nanowire growth is observed at high temperature while mixed axial/lateral growth occurs at low temperature. The change of the InAs nanowire shape with growth duration is studied. It is shown that significant lateral growth of the lower part of the nanowire starts when its length exceeds a critical value, so that their shape presents a steplike profile along their axis. A theoretical model is proposed to explain the nanowire morphology as a result of the axial and lateral contributions of the nanowire growth. [ABSTRACT FROM AUTHOR]

Published
2007
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37. Au-assisted molecular beam epitaxy of InAs nanowires: growth and theoretical analysis

Author

Tchermycheva, Maria, Travers, Laurent, Patriarche, Gilles, Glas, Frank, Harmand, Jean-Christophe, Cirlin, George E., and Dubrovskii, Vladimir G.

Subjects
Arsenic compounds -- Optical properties, Epitaxy -- Research, Indium -- Optical properties, Molecular beams -- Usage, Nanotechnology -- Research, Physics
Abstract

A semiquantitative theoretical model for nanowire growth, which allows obtaining simple theoretical expressions for the time evolution of nanowire length and radius, is described.

Published
2007

43. Piezoelectric Current Generation in Wurtzite GaAs Nanowires.

Author

Alekseev, Prokhor A., Sharov, Vladislav A., Geydt, Pavel, Dunaevskiy, Mikhail S., Lysak, Volodymyr V., Cirlin, George E., Reznik, Rodion R., Khrebtov, Artem I., Soshnikov, Ilya P., and Lähderanta, Erkki

Subjects
NANOWIRES, WURTZITE, PIEZOELECTRICITY, CRYSTAL structure, SCHOTTKY barrier
Abstract

Generation of electric current is observed when GaAs nanowires with wurtzite crystal structure are bent by the probe of an atomic force microscope. The current originates from a piezo active phase in the nanowires due to the piezoelectric effect. Increasing of the piezo‐potential in bent nanowires enhances tunneling through the probe–nanowire Schottky barrier due to the thermionic field emission. Laser illumination amplifies short‐circuit current pulses by two orders of magnitude from 9 pA to 1 nA due to the piezo‐phototronic effect. Utilization of such piezo‐phototronic effect in GaAs nanowires is a solution to accelerate the efficiency of hybrid energy sources “piezoelectric nanogenerator − solar cell” comprised of III–V nanowires. [ABSTRACT FROM AUTHOR]

Published
2018
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46. Modelling of GaAs quantum dot embedded in a polymorph AlGaAs nano wire

Author

Barettin, Daniele, primary, Platonov, Alexei V., additional, Pecchia, Alessandro, additional, Kats, Vladimir N., additional, Cirlin, George E., additional, Soshnikov, Iliya P., additional, Bouravleuv, Alexei D., additional, Besombes, Lucien, additional, Mariette, Henri, additional, der Maur, Matthias Auf, additional, and di Carlo, Aldo, additional

Published
2013
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47. Piezoelectric effect in GaAs nanowires: experiment and theory.

Author

Lysak, Volodymyr, Soshnikov, Ilya P., Lahderanta, Erkki, and Cirlin, George E.

Subjects
WURTZITE, GALLIUM arsenide, NANOWIRES, PIEZOELECTRICITY, NANOELECTROMECHANICAL systems
Abstract

The anomalous piezoelectric effect in GaAs nanowires was detected (the piezoelectric strain coefficient up to d33 ≈ 26 pC/N) that is 12 times larger than the theoretically estimated value. This result is explained by the dominant content of the phase with the wurtzite-type crystal structure in GaAs nanowires and an increased pressing force by the contact layer on the nanowire. (© 2016 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim) [ABSTRACT FROM AUTHOR]

Published
2016
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