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Your search keyword '"Chung, Hao-Tung"' showing total 14 results
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14 results on '"Chung, Hao-Tung"'

1. Elevated-Epi (Elepi) Technique for 3D IC With Stacked FinFETs, Interlevel Metal, and 25×33 mm2 Single-Crystalline Silicon on SiO2

Author

Shih, Bo-Jheng, Pan, Yu-Ming, Chung, Hao-Tung, Lee, Chieh-Ling, Hsieh, I-Chun, Lin, Nein-Chih, Yang, Chih-Chao, Huang, Po-Tsang, Chen, Hung-Ming, Wang, Chiao-Yen, Chiu, Huan-Yu, Cheng, Huang-Chung, Shen, Chang-Hong, Chen, Kuan-Neng, and Hu, Chenming

Abstract

The elevated-epi technique (EET) is introduced for fabricating single-crystal (100) silicon of wafer field size ( $25\times 33$ mm) for monolithic 3-D integrated circuits (3D ICs) using a low substrate temperature pulse laser method. This method enables the demonstration of 3-D inverters with interlayer metal M0 positioned between two layers of FinFETs. Additionally, a hybrid-3-D cell library is presented to enhance the performance, power, and area (PPA) of 3D IC. This hybrid-3-D cell library is crucial in design-technology co-optimization, significantly improving PPA metrics for advanced 3D IC applications.

Published
2024
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3. Advancements in single-crystal silicon with elevated-laser-liquid-phase-epitaxy (ELLPE) for monolithic 3D ICs

Author

Shih, Bo-Jheng, primary, Pan, Yu-Ming, additional, Chung, Hao-Tung, additional, Lin, Nein-Chih, additional, Yang, Chih-Chao, additional, Huang, Po-Tsang, additional, Cheng, Huang-Chung, additional, Shen, Chang-Hong, additional, Shieh, Jia-Min, additional, Wu, Wen-Fa, additional, Chen, Kuan-Neng, additional, and Hu, Chenming, additional

Published
2024
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6. Ge Single-Crystal-Island (Ge-SCI) Technique and BEOL Ge FinFET Switch Arrays on Top of Si Circuits for Monolithic 3D Voltage Regulators

Author

Chung, Hao-Tung, primary, Shih, Bo-Jheng, additional, Yang, Chih-Chao, additional, Lin, Nei-Chih, additional, Huang, Po-Tsang, additional, Lan, Yun-Ping, additional, Lai, Kuan-Fu, additional, Hsu, Wan-Ting, additional, Pan, Yu-Ming, additional, Hong, Zhong-Jie, additional, Hu, Han-Wen, additional, Cheng, Huang-Chung, additional, Shen, Chang-Hong, additional, Shieh, Jia-Min, additional, Hsueh, Fu-Kuo, additional, Chen, Bo-Yuan, additional, Chang, Da-Chiang, additional, Yeh, Wen-Kuan, additional, Chen, Kuan-Neng, additional, and HU, Chenming, additional

Published
2021
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9. Ferroelectric Undoped HfO xCapacitor With Symmetric Synaptic for Neural Network Accelerator

Author

Luo, Jun-Dao, primary, Lai, Yu-Ying, additional, Hsiang, Kuo-Yu, additional, Wu, Chia-Feng, additional, Yeh, Yun-Tien, additional, Chung, Hao-Tung, additional, Li, Yi-Shao, additional, Chuang, Kai-Chi, additional, Li, Wei-Shuo, additional, Liao, Chun-Yu, additional, Chen, Pin-Guang, additional, Chen, Kuan-Neng, additional, Lee, Min-Hung, additional, and Cheng, Huang-Chung, additional

Published
2021
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10. Effect of Crystallinity on the Electrical Characteristics of Poly-Si Tunneling FETs via Green Nanosecond Laser Crystallization

Author

Chung, Hao-Tung, primary, Chen, Chun-Ting, additional, Li, Yi-Shao, additional, Liu, Yu-Wei, additional, Liao, Chan-Yu, additional, Huang, Wen-Hsien, additional, Shieh, Jia-Min, additional, Luo, Jun-Dao, additional, Li, Wei-Shuo, additional, Chuang, Kai-Chi, additional, Chen, Kuan-Neng, additional, and Cheng, Huang-Chung, additional

Published
2021
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11. Improvement of ferroelectric properties in undoped hafnium oxide thin films using thermal atomic layer deposition

Author

Luo, Jun-Dao, primary, Zhang, He-Xin, additional, Wang, Zheng-Ying, additional, Gu, Siang-Sheng, additional, Yeh, Yun-Tien, additional, Chung, Hao-Tung, additional, Chuang, Kai-Chi, additional, Liao, Chan-Yu, additional, Li, Wei-Shuo, additional, Li, Yi-Shao, additional, Li, Kai-Shin, additional, Lee, Min-Hung, additional, and Cheng, Huang-Chung, additional

Published
2019
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12. Atomic Layer Deposition Plasma-Based Undoped-HfO 2 Ferroelectric FETs for Non-Volatile Memory.

Author

Luo, Jun-Dao, Lai, Yu-Ying, Hsiang, Kuo-Yu, Wu, Chia-Feng, Chung, Hao-Tung, Li, Wei-Shuo, Liao, Chun-Yu, Chen, Pin-Guang, Chen, Kuan-Neng, Lee, Min-Hung, and Cheng, Huang-Chung

Subjects
ATOMIC layer deposition, FERROELECTRIC thin films, RECORDS management, MEMORY
Abstract

A plasma-based undoped-HfO2 FeFET (ferroelectric FET) with non-volatile memory characteristics is demonstrated. Modifying the O2 plasma period in plasma-enhanced atomic layer deposition (PE-ALD) is an effective approach to enhance the remnant polarization ($\text{P}_{\text {r}}$) up to 2P $_{\text {r}} = 25\,\,\mu \text{C}$ /cm2 for the MFM (metal/ferroelectric/metal) structure with ferroelectric undoped-HfO2 thin films, and successful integration is implemented for the FeFET. The appropriate O2 vacancies ($\text{V}_{\text {o}}^{{2}+}$) benefit the formation of the ferroelectric phase since they play the role of dopants and help orthorhombic phase (o-phase) formation during post-metal annealing (PMA). The $\text{V}_{\text {o}}^{{2}+}$ -rich undoped-HfO2 FeFET exhibits a memory window (MW) of 0.5 V, ${5} \times {10}^{{4}}$ switching endurance cycles, and higher than $10^{{4}}$ sec of data retention with $\text{V}_{\text {P/E}} = \pm 5$ V. [ABSTRACT FROM AUTHOR]

Published
2021
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13. Ferroelectric Undoped HfOx Capacitor With Symmetric Synaptic for Neural Network Accelerator.

Author

Luo, Jun-Dao, Lai, Yu-Ying, Hsiang, Kuo-Yu, Wu, Chia-Feng, Yeh, Yun-Tien, Chung, Hao-Tung, Li, Yi-Shao, Chuang, Kai-Chi, Li, Wei-Shuo, Liao, Chun-Yu, Chen, Pin-Guang, Chen, Kuan-Neng, Lee, Min-Hung, and Cheng, Huang-Chung

Subjects
ATOMIC layer deposition, CAPACITORS, GRAZING incidence, FERROELECTRIC transitions, X-ray diffraction
Abstract

A plasma-based ferroelectric undoped HfOx capacitor is fabricated using plasma-enhanced atomic layer deposition (PE-ALD), and the multilevel characteristics of synaptic behavior are investigated. A gradual ferroelectric phase transition in the material is confirmed by grazing incidence X-ray diffraction (GI-XRD) for different O2 plasma periods. The metal–ferroelectric–metal (MFM) capacitor presents excellent remnant polarization (Pr) up to 13 μC/cm2 and a switching endurance of more than 108 cycles. Superior small potentiation/depression nonlinearity (αp/αd = −0.08/−1.66 for voltage modulation stimulation) for synaptic training and almost symmetry training curve (|αp−αd|) are obtained. High stability under multilevel operation with five consecutive cycles of alternating potentiation and depression is exhibited without significant polarization variation for each training step (pulse). [ABSTRACT FROM AUTHOR]

Published
2021
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