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The cone photoreceptors in our eyes selectively transduce the natural light into spiking representations, which endows the brain with high energy-efficiency color vision. However, the cone-like device with color-selectivity and spike-encoding capability remains challenging. Here, we propose a vertical integrated spiking cone photoreceptor (VISCP) array with the structure of ITO/Ta2O5/Ag/IGZO/ITO, which can directly transduce persistent lights into spike trains at a certain rate according to the input wavelengths. The VISCPs have an ultralow power consumption of ≤400 pW per spike in visible light, which is very close to biological cones. In this work, lights with three wavelengths were exploited as pseudo three primary colors to form ‘colorful’ images for recognition tasks, and the device with the ability to discriminate mixed colors shows a better accuracy. Our results would enable hardware spiking neural networks with biologically plausible visual perception and provide great potential for the development of dynamic vision sensors.

One-dimensional metal-oxide nanowire networks (NNs) are considered as important elements in electronics due to their unique physical and electrical performances. In this letter, Sn1-x Gax O NNs were fabricated and field-effect transistors (FETs) based on Sn1-x Gax O NNs with different Sn/Ga ratios were constructed. The characteristics of the FETs have been systematically investigated. In order to promote the adhesion and electrical performance of nanowires, Sn1-x Gax O NNs were welded by introducing the polymer mixture containing poly vinyl pyrrolidone and poly methyl methacrylate. Utilizing a welding process, the transport properties of Sn1-x Gax O NNs have been greatly promoted, and the FETs based on Sn0.8 Ga0.2 O NNs exhibit optimum electrical performance. Once integrated with high-k ZrOx dielectric, the FET based on Sn0.8 Ga0.2 O NNs/ZrOx exhibits high stability and high electrical performance, including $\text{a}\mu _{\text{FE}}$ of 5.2 cm2 /V s, an $\text{I}_{\text{on}} /\text{I}_{\text{off}}$ of $1.5\times 10 ^{6}$ , a subthreshold voltage of 170 mV/decade, an on voltage of −0.25 V, and a negligible hysteresis of ~0.12 V. The successful fabrication of the FETs based on Sn0.8 Ga0.2 O NNs lays the foundation for the development of low-consumption, low-cost and high-performance electronic devices.

Multi-beam bathymetry technology plays an important role in ocean, river and lake surveying and mapping. According to the measurement principle and technical requirements of MS8200 multi-beam bathymetry system, this paper introduces the composition and working principle of the system, the installation and calibration of the system, and the data in the post-processing process, the sea area and terrain characteristics near Wenchang Qinglan Port are taken as the research object to discuss the dual multi-beam bathymetric technology and data processing process, and compare the data of single multi-beam in the same sea area. The research results show that the dual probe of multibeam bathymetry system can better reflect the topographic features of the seafloor compared with the single probe, and shorten the time of mapping, reduce the labor intensity and improve the measurement efficiency, and provide data reference for the stability and reliability evaluation study of the dual probe of multibeam bathymetry system.

Electrospinning technique is considered to be one of the most powerful approaches for the preparation of one-dimensional (1D) metal oxide nanofiber networks (NFNs). In this report, In2O3 NFNs were fabricated by electrospinning using polymethyl methacrylate (PMMA) as polymer and epoxy resin as additive. Benefiting from the excellent chemical properties of PMMA, In2O3 NFNs with impact stacking were prepared at a relatively low annealing temperature by a welding process. The welded In2O3 NFNs were characterized by various techniques and the electrical performance of the field-effect transistors (FETs) based on the welded In2O3 NFNs were systematically investigated. It is observed that the FET based on In2O3 NFNs annealed at 320 °C, with a nanofiber density of $0.4\,\,\mu \text{m}^{-{1}}$ exhibits high electrical performance, including an ${I}_{ {\mathrm{{ON}}}}/{I}_{ {\mathrm{{OFF}}}}$ of $\sim {5}\times {10}^{{7}}$ , a $\mu _{\text {FE}}$ of 1.27 cm2/V s, an on voltage of −8 V and a hysteresis of 5 V. A device array with ${4}\times {5}$ units was fabricated and tested, confirming the excellent reliability and reproducibility of the FET.

Emulating the essential synaptic behaviors using single synaptic transistor has attracted extensive attention for building the brain-inspired neuromorphic systems. However, few reports on synaptic ...

In this letter, high-performance thin-film transistors (TFTs), with indium oxide (In2O3) as front channel layer, high permittivity ZrO2 as dielectric layer, and aluminum oxide (Al2O3) as passivation layers were integrated by a fully solution process. It is found that the incorporation of Al2O3 passivation layer gives rise to a sharp decrease in the off current (Ioff) and a corresponding increase in the on/off current ratio ( $\text{I}_{\text {on}}$ /Ioff) of the TFTs, compared to that without Al2O3 passivation. Furthermore, the thickness effect of the passivation layer on the performance of In2O3 /ZrO2 TFTs has been investigated systematically. The In2O3 /ZrO2 TFTs with optimized Al2O3 passivation layers can be operated at 3 V with high performance, including a high field-effect mobility of 21.22 cm2 /V s, a large $\text{I}_{\text {on}}$ /I off of 107 and a negligible hysteresis (~0V). This work demonstrates an effective strategy for the construction of high performance TFTs by incorporating the passivation layer.

Synaptic plasticity divided into long-term and short-term categories is regarded as the origin of memory and learning, which also inspires the construction of neuromorphic systems. However, it is difficult to mimic the two behaviors monolithically, which is due to the lack of time-tailoring approaches for a certain synaptic device. In this Letter, indium-gallium-zinc-oxide (IGZO) nanofiber-based photoelectric transistors are proposed for realizing tunable photoelectric synaptic plasticity by the indium composition ratio. Notably, short-term plasticity to long-term plasticity transition can be realized by increasing the ratio of indium in the IGZO channel layer. The spatiotemporal dynamic logic and low energy consumption (

Emulating the essential synaptic behaviors using single synaptic transistor has attracted extensive attention for building the brain-inspired neuromorphic systems. However, few reports on synaptic transistors fabricated by solution processes have been reported. In this article, the indium oxide synaptic transistors based on polyimide substrates were fabricated by a nontoxic water-inducement method at a low temperature, and lithium perchlorate (LiClO