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Surface-enhanced Raman scattering (SERS) has become one of the most sensitive analytical techniques for identifying the chemical components, molecular structures, molecular conformations, and the interactions between molecules. However, great challenges still need to be addressed until it can be widely accepted by the absolute quantification of analytes. Recently, many efforts have been devoted to addressing these issues via various electromagnetic (EM), chemical (CM), and EM-CM hybrid coupling enhancement strategies. In comparison with uncoupled SERS devices, they offer key advantages in terms of sensitivity, reproducibility, uniformity, stability, controllability and reliability. This review provides an in-depth analysis of coupled SERS devices, including coupling enhancement mechanisms, materials and approaches. Finally, we also discuss the remaining bottlenecks and possible strategies for the development of coupling-enhanced SERS devices in the future.

The aprotic lithium–oxygen (Li–O2) battery has triggered tremendous efforts for advanced energy storage due to the high energy density. However, realizing toroid-like Li2O2 deposition in low-donor-...

Power consumption is one of the most challenging bottlenecks for complementary metal-oxide-semiconductor integration. Negative-capacitance field-effect transistors (NC-FETs) offer a promising platform to break the thermionic limit defined by the Boltzmann tyranny and architect energy-efficient devices. However, it is a great challenge to achieving ultralow-subthreshold-swing (SS) (10 mV dec-1 ) and small-hysteresis NC-FETs simultaneously at room temperature, which has only been reported using the hafnium zirconium oxide system. Here, based on a ferroelectric LiNbO3 thin film with great spontaneous polarization, an ultralow-SS NC-FET with small hysteresis is designed. The LiNbO3 NC-FET platform exhibits a record-low SS of 4.97 mV dec-1 with great repeatability due to the superior capacitance matching characteristic as evidenced by the negative differential resistance phenomenon. By modulating the structure and operating parameters (such as channel length (Lch ), drain-sourse bias (Vds ), and gate bias (Vg )) of devices, an optimized SS from ≈40 to ≈10 mV dec-1 and hysteresis from ≈900 to ≈60 mV are achieved simultaneously. The results provide a new potential method for future highly integrated electronic and optical integrated energy-efficient devices.

The emergence of 2D polarized materials, including ferromagnetic, ferrovalley, and ferroelectric materials, has demonstrated unique quantum behaviors at atomic scales. These polarization behaviors are tightly bonded to the new degrees of freedom (DOFs) for next generation information storage and processing, which have been dramatically developed in the past few years. Here, the basic 2D polarized materials system and related devices' application in spintronics, valleytronics, and electronics are reviewed. Specifically, the underlying physical mechanism accompanied with symmetry broken theory and the modulation process through heterostructure engineering are highlighted. These summarized works focusing on the 2D polarization would continue to enrich the cognition of 2D quantum system and promising practical applications.

The ultrabroadband spectrum detection from ultraviolet (UV) to long-wavelength infrared (LWIR) is promising for diversified optoelectronic applications of imaging, sensing, and communication. However, the current LWIR-detecting devices suffer from low photoresponsivity, high cost, and cryogenic environment. Herein, a high-performance ultrabroadband photodetector is demonstrated with detecting range from UV to LWIR based on air-stable nonlayered ultrathin Fe

The aprotic lithium-oxygen (Li-O

Ternary two-dimensional (2D) semiconductors with controllable wide bandgap, high ultraviolet (UV) absorption coefficient, and critical tuning freedom degree of stoichiometry variation have a great application prospect for UV detection. However, as-reported ternary 2D semiconductors often possess a bandgap below 3.0 eV, which must be further enlarged to achieve comprehensively improved UV, especially deep-UV (DUV), detection capacity. Herein, sub-one-unit-cell 2D monolayer BiOBr nanoflakes (≈0.57 nm) with a large size of 70 µm are synthesized for high-performance DUV detection due to the large bandgap of 3.69 eV. Phototransistors based on the 2D ultrathin BiOBr nanoflakes deliver remarkable DUV detection performance including ultrahigh photoresponsivity (Rλ , 12739.13 A W-1 ), ultrahigh external quantum efficiency (EQE, 6.46 × 106 %), and excellent detectivity (D*, 8.37 × 1012 Jones) at 245 nm with a gate voltage (Vg ) of 35 V attributed to the photogating effects. The ultrafast response (τrise = 102 µs) can be achieved by utilizing photoconduction effects at Vg of -40 V. The combination of photocurrent generation mechanisms for BiOBr-based phototransistors controlled by Vg can pave a way for designing novel 2D optoelectronic materials to achieve optimal device performance.

2D planar structures of nonlayered wide-bandgap semiconductors enable distinguished electronic properties, desirable short wavelength emission, and facile construction of 2D heterojunction without lattice match. However, the growth of ultrathin 2D nonlayered materials is limited by their strong covalent bonded nature. Herein, the synthesis of ultrathin 2D nonlayered CuBr nanosheets with a thickness of about 0.91 nm and an edge size of 45 µm via a controllable self-confined chemical vapor deposition method is described. The enhanced spin-triplet exciton (Zf , 2.98 eV) luminescence and polarization-enhanced second-harmonic generation based on the 2D CuBr flakes demonstrate the potential of short-wavelength luminescent applications. Solar-blind and self-driven ultraviolet (UV) photodetectors based on the as-synthesized 2D CuBr flakes exhibit a high photoresponsivity of 3.17 A W-1 , an external quantum efficiency of 1126%, and a detectivity (D*) of 1.4 × 1011 Jones, accompanied by a fast rise time of 32 ms and a decay time of 48 ms. The unique nonlayered structure and novel optical properties of the 2D CuBr flakes, together with their controllable growth, make them a highly promising candidate for future applications in short-wavelength light-emitting devices, nonlinear optical devices, and UV photodetectors.

High-polluting industrial ammonia synthesis runs counter to the intentions of a low-carbon society. In contrast, the electrocatalytic nitrogen reduction reaction (NRR) is expected to provide fascinating and broad prospects for green ammonia synthesis, which urgently requires efficient and low-cost catalysts. Although it has been proven that two-dimensional (2D) transition metal carbides and carbonitrides (MXenes) have great potential for NRR, there is still need to further improve their activity. In this work, a co-doping strategy was employed to design the electronic configuration and structural mechanic of Ti3C2Tx catalysts for efficient NRR. As expected, the synergistic effect of N and S dopants in Ti3C2Tx (NS-Ti3C2Tx) significantly improves the electron/ion transport capacity and increases the catalytic active sites. Specifically, the as-prepared NS-Ti3C2Tx nanosheets demonstrated an excellent electrocatalytic stability with NH3 yield of 34.23 μg h−1 mg−1cat at −0.55 V vs. RHE, and a Faraday efficiency of 6.6% in 0.05 M H2SO4. Therefore, this work opens up a new research approach for preparing high-performance catalysts for energy storage applications through efficient nitrogen fixation technology.

The emergence of superconductivity in 2D materials has attracted much attention and there has been rapid development in recent years because of their fruitful physical properties, such as high transition temperature (Tc ), continuous phase transition, and enhanced parallel critical magnetic field (Bc ). Tremendous efforts have been devoted to exploring different physical parameters to figure out the mechanisms behind the unexpected superconductivity phenomena, including adjusting the thickness of samples, fabricating various heterostructures, tuning the carrier density by electric field and chemical doping, and so on. Here, different types of 2D superconductivity with their unique characteristics are introduced, including the conventional Bardeen-Cooper-Schrieffer superconductivity in ultrathin films, high-Tc superconductivity in Fe-based and Cu-based 2D superconductors, unconventional superconductivity in newly discovered twist-angle bilayer graphene, superconductivity with enhanced Bc , and topological superconductivity. A perspective toward this field is then proposed based on academic knowledge from the recently reported literature. The aim is to provide researchers with a clear and comprehensive understanding about the newly developed 2D superconductivity and promote the development of this field much further.

The ultrabroadband spectrum detection from ultraviolet (UV) to long-wavelength infrared (LWIR) is promising for diversified optoelectronic applications of imaging, sensing, and communication. However, the current LWIR-detecting devices suffer from low photoresponsivity, high cost, and cryogenic environment. Herein, a high-performance ultrabroadband photodetector is demonstrated with detecting range from UV to LWIR based on air-stable nonlayered ultrathin Fe3 O4 nanosheets synthesized via a space-confined chemical vapor deposition (CVD) method. Ultrahigh photoresponsivity (R) of 561.2 A W-1 , external quantum efficiency (EQE) of 6.6 × 103 %, and detectivity (D*) of 7.42 × 108 Jones are achieved at the wavelength of 10.6 µm. The multimechanism synergistic effect of photoconductive effect and bolometric effect demonstrates the high sensitivity for light with any light intensities. The outstanding device performance and complementary mixing photoresponse mechanisms open up new potential applications of nonlayered 2D materials for future infrared optoelectronic devices.

With the continuous exploration of 2D transition metal dichalcogenides (TMDs), novel high‐performance devices based on the remarkable electronic and optoelectronic natures of 2D TMDs are increasingly emerging. As fresh blood of 2D TMD family, anisotropic MTe2 and ReX2 (M = Mo, W, and X = S, Se) have drawn increasing attention owing to their low‐symmetry structures and charming properties of mechanics, electronics, and optoelectronics, which are suitable for the applications of field‐effect transistors (FETs), photodetectors, thermoelectric and piezoelectric applications, especially catering to anisotropic devices. Herein, a comprehensive review is introduced, concentrating on their recent progresses and various applications in recent years. First, the crystalline structure and the origin of the strong anisotropy characterized by various techniques are discussed. Specifically, the preparation of these 2D materials is presented and various growth methods are summarized. Then, high‐performance applications of these anisotropic TMDs, including FETs, photodetectors, and thermoelectric and piezoelectric applications are discussed. Finally, the conclusion and outlook of these applications are proposed.

Two-dimensional (2D) materials, benefitting from their unique planar structure and various appealing electronic properties, have attracted much attention for novel electronic and optoelectronic applications. As a basis for practical devices, the study of micro/nano-2D material arrays based on coupling effects and synergistic effects is critical to the functionalization and integration of 2D materials. Moreover, micro/nano-2D material arrays are compatible with traditional complementary metal oxide semiconductor (CMOS) electronics, catering well to high-integration, high-sensitivity, and low-cost sensing and imaging systems. This review presents some recent studies on 2D material arrays in sequence from their novel preparations to high-integration applications as well as explorations on dimension tuning. A first focus is on various typical fabrication methods for 2D material arrays, including photolithography, 2D printing, seeded growth, van der Waals epitaxial growth, and self-assembly. Then, the applications of 2D material arrays, such as field effect transistors, photodetectors, pressure sensors, as well as flexible electronic devices of photodetectors and strain sensors, are elaborately introduced. Furthermore, the recent burgeoning exploration of mixed-dimensional heterostructure arrays including 0D/2D, 1D/2D, and 3D/2D is discussed. Ultimately, conclusions and an outlook based on the current developments in this promising field are presented.