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With the resistive random access memory (ReRAM) devices based on the Al/BaTiO3 (BTO)/ITO structure fabricated at hand, by cross-analyzing the resistive memory characteristics in terms of various barium titanate (BTO) film thicknesses, it is found that the device with 60 nm thick BTO can be switched more than 425 times, while the corresponding SET/RESET voltage, the on-off ratio, and the retention time are −0.69 V/0.475 V, 102, and more than 104 seconds, respectively. Furthermore, the aforementioned ReRAM with a low switching voltage and low power consumption is further integrated with a waveguide resonator in the form of a dual microdisk aligned in a parallel fashion. As the separation gap between the two microdisks is fixed at 15 μm, the ReRAM-mediated dual disk resonator would render a 180° phase reversal between the spectral outputs of the through-port and drop-port. If the gap is shortened to 10 and 5 μm, the expected phase reversal could also be retrieved due to the selective combinations of different memory states associated with each of the two ReRAM microdisks as witnessed by a series of characterization measurements. [ABSTRACT FROM AUTHOR]

In this study, a self-developed atmospheric pressure atomic layer deposition (APALD) system is used to deposit Al2O3 passivation film, along with the use of precursor combinations of Al(CH3)3/H2O to improve its passivation characteristics through a short-time microwave post-annealing process. Comparing the unannealed and microwave-annealed samples whose temperature is controlled at 200–500 °C, APALD non-vacuum deposited film can be realized with a higher film deposition rate, which is beneficial for increasing the production throughput while at the same time reducing the operating cost of vacuum equipment at hand. Since the microwave has a greater penetration depth during the process, the resultant thermal energy provided can be spread out evenly to the entire wafer, thereby achieving the effect of rapid annealing. The film thickness is subsequently analyzed by TEM, whereas the chemical composition is verified by EDS and XPS. The negative fixed charge and interface trap density are analyzed by the C-V measurement method. Finally, the three major indicators of τeff, SRV, and IVoc are analyzed by QSSPC to duly verify the excellent passivation performance. [ABSTRACT FROM AUTHOR]

GaN Schottky barrier UV photodetectors (PDs) with a β-Ga2O3 cap layer realized by furnace oxidation of GaN epitaxial layer were fabricated and characterized. With the cap layer inserted, it was found that the reverse leakage current could be reduced by more than 4 orders of magnitude and the UV-to-visible rejection ratio increased by 21 times. When compared with the conventional GaN PDs, incorporating an additional β-Ga2O3 cap layer helps to reduce the noise level and at the same time achieve a larger detectivity. [ABSTRACT FROM AUTHOR]