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Controlled and tunable growth of chemically active edge sites over inert in-plane MoS2 flakes is the key requirement to realize their vast number of applications in catalytic activities. Thermodynamically, growth of inert in-plane MoS2 is preferred due to fewer active sites on its surface over the edge sites. Here, we demonstrate controlled and tunable growth from in-plane MoS2 flakes to dense and electrically connected edge-enriched three-dimensional (3D) network of MoS2 flakes by varying the gas flow rate using tube-in-tube chemical vapor deposition technique. Field emission scanning electron microscope results demonstrated that the density of edge-enriched MoS2 flakes increase with increase in the gas flow rate. Raman and transmission electron microscopy analyses clearly revealed that the as-synthesized in-plane and edge-enriched MoS2 flakes are few layers in nature. Atomic force microscopy measurement revealed that the growth of the edge-enriched MoS2 takes place from the in-plane MoS2 flakes. On the ...

CH3NH3PbI3 deposited on a ZnO electron transport layer is chemically unstable and decomposes at >80 °C, leaving PbI2 on the substrate along with traces of iodine. We found that this decomposition was reversible and could be prevented if a restricted volume solvent annealing procedure was applied. We also found that decomposition requires the presence of a certain amount of the processing solvent within the film. Finally, we developed a reliable annealing protocol for depositing perovskite film on ZnO, which resulted in the generation of repeatable solar cell devices.