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Erbium-doped materials can serve as spin-photon interfaces with optical transitions in the telecom C-band, making them an exciting class of materials for long-distance quantum communication. However, the spin and optical coherence times of Er3+ ions are limited by currently available host materials, motivating the development of new Er3+-containing materials. Here, we demonstrate the use of ion implantation to efficiently screen prospective host candidates, and show that disorder introduced by ion implantation can be mitigated through post-implantation thermal processing to achieve inhomogeneous linewidths comparable to bulk linewidths in as-grown samples. We present optical spectroscopy data for each host material, which allows us to determine the level structure of each site, allowing us to compare the environments of Er3+ introduced via implantation and via doping during growth. We demonstrate that implantation can generate a range of local environments for Er3+, including those observed in bulk-doped materials, and that the populations of these sites can be controlled with thermal processing.

Solid-state spin defects are a promising platform for quantum science and technology, having realized demonstrations of a variety of key components for quantum information processing, particularly in the area of quantum networks. An outstanding challenge for building larger-scale quantum systems with solid-state defects is realizing high-fidelity control over multiple defects with nanoscale separations, which is required to realize strong spin-spin interactions for multi-qubit logic and the creation of entangled states. In this work, we experimentally demonstrate an optical frequency-domain multiplexing technique, allowing high-fidelity initialization and single-shot spin measurement of six rare earth (Er$^{3+}$) ions, within the sub-wavelength volume of a single, silicon photonic crystal cavity. We also demonstrate sub-wavelength control over coherent spin rotations using an optical AC Stark shift. The demonstrated approach may be scaled to large numbers of ions with arbitrarily small separation, and is a significant step towards realizing strongly interacting atomic defect arrays with applications to quantum information processing and fundamental studies of many-body dynamics.

Controlling the shape and growth of crystals in molecular organic solids has ramifications impacting diverse fields, but remains challenging to fully exploit. Here, crystal shapes in organic thin films are manipulated from aspect ratios of 1 to over 50, with corresponding growth rates decreased by an order of magnitude simply by mixing a structurally dissimilar minority species into the film. These effects are mapped with composition and temperature in mixtures of two model small-molecular-weight organic compounds, revealing a continuous variation in crystal shape and growth rate. Other combinations of molecules are discussed, showing additive shape selection in multicomponent mixtures and enabling customization of crystal shape.

We demonstrate single-shot readout of the spin of a single Er3+ ion in a silicon nanophotonic cavity, leveraging cavity-enhanced cyclicity.

Er3+ ions in crystals are promising for quantum networks. We demonstrate ion implantation of Er3+ into TiO2, a potential low-noise host material, with narrow optical and spin linewidths and high implantation yield.

Atomic and atomlike defects in the solid state are widely explored for quantum computers, networks, and sensors. Rare earth ions are an attractive class of atomic defects that feature narrow spin and optical transitions that are isolated from the host crystal, allowing incorporation into a wide range of materials. However, the realization of long electronic spin coherence times is hampered by magnetic noise from abundant nuclear spins in the most widely studied host crystals. Here, we demonstrate that Er

Atomic and atom-like defects in the solid-state are widely explored for quantum computers, networks and sensors. Rare earth ions are an attractive class of atomic defects that feature narrow spin and optical transitions that are isolated from the host crystal, allowing incorporation into a wide range of materials. However, the realization of long electronic spin coherence times is hampered by magnetic noise from abundant nuclear spins in the most widely studied host crystals. Here, we demonstrate that Er$^{3+}$ ions can be introduced via ion implantation into TiO$_2$, a host crystal that has not been studied extensively for rare earth ions and has a low natural abundance of nuclear spins. We observe efficient incorporation of the implanted Er$^{3+}$ into the Ti$^{4+}$ site (40% yield), and measure narrow inhomogeneous spin and optical linewidths (20 and 460 MHz, respectively) that are comparable to bulk-doped crystalline hosts for Er$^{3+}$. This work demonstrates that ion implantation is a viable path to studying rare earth ions in new hosts, and is a significant step towards realizing individually addressed rare earth ions with long spin coherence times for quantum technologies.

Spin-photon interfaces based on solid-state atomic defects have enabled a variety of key applications in quantum information processing. To maximize the light-matter coupling strength, defects are often placed inside nanoscale devices. Efficiently coupling light and microwave radiation into these structures is an experimental challenge, especially in cryogenic or high vacuum environments with limited sample access. In this work, we demonstrate a fiber-based scanning probe that simultaneously couples light into a planar photonic circuit and delivers high power microwaves for driving electron spin transitions. The optical portion achieves 46% one-way coupling efficiency, while the microwave portion supplies an AC magnetic field with strength up to 9 Gauss at 10 Watts of input microwave power. The entire probe can be scanned across a large number of devices inside a 3He cryostat without free-space optical access. We demonstrate this technique with silicon nanophotonic circuits coupled to single Er3+ ions.

We demonstrate the first observation of photons from a single Er3+ ion in a solid-state host by using a Si photonic crystal cavity to enhance the photon emission rate by more than 650.

Single atoms and atomlike defects in solids are ideal quantum light sources and memories for quantum networks. However, most atomic transitions are in the ultraviolet-visible portion of the electromagnetic spectrum, where propagation losses in optical fibers are prohibitively large. Here, we observe for the first time the emission of single photons from a single Er^{3+} ion in a solid-state host, whose optical transition at 1.5 μm is in the telecom band, allowing for low-loss propagation in optical fiber. This is enabled by integrating Er^{3+} ions with silicon nanophotonic structures, which results in an enhancement of the photon emission rate by a factor of more than 650. Dozens of distinct ions can be addressed in a single device, and the splitting of the lines in a magnetic field confirms that the optical transitions are coupled to the electronic spin of the Er^{3+} ions. These results are a significant step towards long-distance quantum networks and deterministic quantum logic for photons based on a scalable silicon nanophotonics architecture.